• 한국결정성장학회지
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• 제18권4호
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• pp.137-139
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• 2008

Floating zone, neutron transmutation-doped and magnetic Czochralski silicon crystals are being widely used for fabrication power devices. To improve the quality of these devices and to decrease their production cost, it is necessary to use large-diameter wafers with high and uniform resistivity. Recent developments in the crystal growth technology of Czochralski silicon have enable to produce Czochralski silicon wafers with sufficient resistivity and with well-controlled, suitable concentration of oxygen. In addition, using Czoehralski silicon for substrate materials may offer economical benefits, First, Czoehralski silicon wafers might be cheaper than standard floating zone silicon wafers, Second, Czoehralski wafers are available up to diameter of 300 mm. Thus, very large area devices could be manufactured, which would entail significant saving in the costs, In this work, the conventional Czochralski silicon crystals were grown with higher oxygen concentrations using high pure polysilicon crystals. The silicon wafers were annealed by several steps in order to obtain saturated oxygen precipitation. In those wafers high resistivity over $5,000{\Omega}$ cm is kept even after thermal donor formation annealing.

• 한국결정성장학회지
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• 제23권3호
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• pp.119-123
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• 2013

Most of the world's solar cells in photovoltaic industry are currently fabricated using crystalline silicon. Czochralski-grown silicon crystals are more expensive than multicrystalline silicon crystals. The future of solar-grade Czochralski-grown silicon crystals crucially depends on whether it is usable for the mass-production of high-efficiency solar cells or not. It is generally believed that the main obstacle for making solar-grade Czochralski-grown silicon crystals a perfect high-efficiency solar cell material is presently light-induced degradation problem. In this work, the substitution of boron with gallium in p-type silicon single crystal is studied as an alternative to reduce the extent of lifetime degradation. The diamond-wire sawing technology is employed to slice the silicon ingot. In this paper, the quality of the diamond wire-sawn gallium-doped silicon wafers is studied from the chemical, electrical and structural points of view. It is found that the characteristic of gallium-doped silicon wafers including texturing behavior and surface metallic impurities are same as that of conventional boron-doped Czochralski crystals.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1995년도 추계 학술발표 강연 및 논문개요집
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• pp.31-31
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• 1995

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.17-20
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• 1998

Thermal behavior of Flow Pattern Defect (FPD) and Large Pit (LP) in Czochralski Silicon crystals was investigated by applying high temperature ($\geq$1100$^{\circ}C$) annealing and non-agitation Secco etching. For evaluation of the effect of LP upon device performance / yield, DRAM and ASIC devices were fabricated. The results indicate that high temperature annealing generates LPs whereas it decreases FPD density drastically, and LP does not have detrimental effects on the performance /

• 한국결정성장학회지
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• 제15권4호
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• pp.129-134
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• 2005

초크랄스키 단결정장치내 실리콘 유동의 자기장효과에 대한 수치해석을 하였다. 8" 단결정 성장과정에서 난류 모형을 사용하여 수송현상을 계산하였다. 도가니 회전수가 작으면 자연대류가 지배적이었다. 도가니 회전수가 증가할수록 강제대류가 증가되며 온도 분포는 더 넓어진다. cusp 자기장을 인가하면 도가니근처의 유동이 크게 감소하며 온도분포는 전도의 경우와 비슷해진다.

• International Journal of Control, Automation, and Systems
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• 제3권2호
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• pp.252-257
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• 2005

In this work, we propose a simple but efficient method to design a target temperature trajectory for pulling speed tracking control of the crystal grower in the Czochralski crystallization process. In the suggested method, the model predictive control strategy is used to incorporate the complex dynamic effect of the heater temperature on the pulling speed into the temperature trajectory design quantitatively. The feedforward trajectories designed by the proposed method were implemented on 200 mm and 300 mm silicon crystal growers in the commercial Czochralski process. The application results have demonstrated its excellent and consistent tracking performance of pulling speed along whole bulk crystal growth.

• 한국결정성장학회지
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• 제7권1호
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• pp.27-40
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• 1997

The heat in Czochralski method is transfered by all transport mechanisms such as convection, conduction and radiation and convection is caused by the temperature difference in the molden pool, the rotations of crystal or crucible and the difference of surface tension. This study delvelops the simulation model of Czochralski growth by using the finite difference method with fixed grids combined with new latent heat treatment model. The radiative heat transfer occured in the surfce of the system is treated by calculating the view factors among surface elements. The model shows that the flow is turbulent, therefore, turbulent modeling must be used to simulate the transport phenomena in the real system applied to 8" Si single crystal growth process. The effects of a cusp magnetic field imposed on the Czochralski silicon melt are studied by numerical analysis. The cusp magnetic field reduces the natural and forced convection due to the rotation of crystal and crucible very effectively. It is shown that the oxygen concentration distribution on the melt/crystal interface is sensitively controlled by the change of the magnetic field intensity. This provides an interesting way to tune the desired O concentration in the crystal during the crystal growing.

• 한국결정성장학회지
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• 제11권6호
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• pp.259-263
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• 2001

The continuum model of transient point defect dynamics to predict the concentrations of interstitial and vacancy is established by estimating expressions for the thermophysical properties of intrinsic point defects. And the point defect distribution in a Czochralski-grown 200 mm silicon crystal and the location of oxidation-induced stacking fault ring(OiSF-ring) created during the cooling of crystals are calculated by using the numerical analysis. The purpose of this paper is to show that his approach lead to predictions that are consistent with experimental results. Predicted point defect distributions by transient point defect dynamic analysis are in good qualitative agreement with experimental data under widely and abruptly varying crystal pull rates when correlated with the position of the OiSF-ring .

• 대한금속재료학회지
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• 제47권11호
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• pp.734-739
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• 2009

It is well known that the temperature and the flow pattern of the crystal-melt interface affect the qualities of the single crystal in the Czochralski process. Thus the temperature profile in the growth system is very important information. This work focuses on controlling the temperature of the silicon melt with a thermal gradient of the crucible. Therefore, the side heater is divided into three parts and an extra heater is added at the bottom for thermal gradient. The temperature of the silicon melt can be strongly influenced and controlled by the electric power of each heater.

• 한국결정성장학회지
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• 제28권4호
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• pp.141-147
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• 2018

태양광 에너지는 깨끗하며 무한한 재생에너지의 한가지로 많은 관심을 받아왔다. 태양광 에너지는 다결정 실리콘 웨이퍼 혹은 단결정 실리콘 웨이퍼로 구성된 솔라셀에 의해서 전기에너지로 전환된다. 제조원가를 낮추기 위하여 한 개의 석영 도가니에 폴리실리콘의 충진 크기를 증가시키는 연구가 많이 개발되어 왔다. 충진 크기를 증가시키면, 쵸크랄스키 공정장비의 온도제어가 강한 멜트 대류 때문에 힘들어진다. 본 연구에서는 20 inch와 24 inch 석영도가니와 90 Kg, 120 Kg, 150 Kg, 200 Kg, 250 Kg의 다양한 폴리실리콘 충진 크기에서 시뮬레이션을 통해 장비 온도 프로파일을 얻었으며, 실제값과 비교하고 분석하였다. 시뮬레이션 온도 프로파일과 실제 온도프로파일이 잘 일치하였으며, 이로써 충진 사이즈가 증가할 경우, 실제온도 프로파일 최적화를 위해 시뮬레이션을 사용할 수 있게 되었다.