• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.5
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• pp.202-206
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• 2010

Single crystals of $ZnWO_4$ were grown successfully in the [100], [010] and [001] directions using the Czochralski method. The growth parameters and the formation of slip plane in $ZnWO_4$ crystals were studied. $ZnWO_4$ crystals had a cleavage plane of (010). The dislocation density on the (010) plane at the center of the crystal was lower than that of the edge region. It was inferred that the high density at the edge of the crystals was caused by the thermal gradient during crystal growth. The etch pit arrangement revealed the (100) slip plane to be most active during crystal growth.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.1-7
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• 1996

We developed an automatic diameter control system to control the diameter of single crystal for Czochralski growth. The system is composed of load cell, software program and data acquisition system connected to computer which controls RF power. This study describes the basic principle, characteristics and components of the system. The diameter of Nd:YAG crystal could be controlled within ±5% tolerance by this system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.1
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• pp.1-7
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• 2016

RE : YAG ($RE=Nd^{3+}$, $Er^{3+}$) single crystals are laser diodes and generally grown by Czochralski method with controlling the various growth parameter. Since the defects occurred by temperature gradient or the rotation speed of solid-liquid growth interface act as the decline of crystal optical property during the growth procedure, crystalline quality improvement via defects analysis is necessary. The etch pit density (EPD) analysis was used to confirm the surface defect of grown RE : YAG single crystal and to select the area of transmission electron microscopy (TEM) analysis. Defects in the specimen produced by tripod polishing method such as buckling, rod shaped, bend contours by internal stress, segregation and others were observed by using 200 kV TEM and 300 kV FE-TEM.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.4
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• pp.141-147
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• 2018

Solar energy has attracted big attentions as one of clean and unlimited renewable energy. Solar energy is transformed to electrical energy by solar cells which are comprised of multi-silicon wafer or mono-silicon wafer. Monosilicon wafers are fabricated from the Czochralski method. In order to decrease fabrication cost, increasing a poly-silicon charge size in one quartz crucible has been developed very much. When we increase a charge size, the temperature control of a Czochralski equipment becomes more difficult due to a strong melt convection. In this study, we simulated a Czochralski equipment temperature at 20 inch and 24 inch in quartz crucible diameter and various charge sizes (90 kg, 120 kg, 150 kg, 200 kg, 250 kg). The simulated temperature profiles are compared with real temperature profiles and analyzed. It turns out that the simulated temperature profiles and real temperature profiles are in good agreement. We can use a simulated profile for the optimization of real temperature profile in the case of increasing charge sizes.

• Journal of the Korean Ceramic Society
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• v.34 no.10
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• pp.1015-1020
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• 1997

In the Nd;YAG crystal growth by Czochralski method, the relationship between the core formation and the solid-liquid interface was observed by controlling the temperature gradient in the furnace. When the crystal was grown along<111> direction, defects and core area were reduced as the temperature gradient increased. The optimum temperature gradient was found to be higher than 4$0^{\circ}C$/cm. The Nd3+ concentration analysis by ICP-Mass showed that the segregation coefficient was about 20% higher in the core region than core-free region, where the segregation coefficients of core region and core-free region were 0.22 and 0.18, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.74-81
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• 1991

The temperature profile of Czochralski single crystal growth system was simulated considering the fluid flow and surface radiation heat transfer. View factors of surface elements were calculated for radiation heat transfer. Two phases(solid and liquid) were treated as a continuous phase by assigning artificial large viscosity to the solid phase and latent heat was accounted by iterative heat revolution method. The solidification model was applied to solid front of the pure Ga during the melting to verify the model. The whole simulation model of CZ system was applied to the growth Al single crystal.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.6
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• pp.259-263
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• 2001

The continuum model of transient point defect dynamics to predict the concentrations of interstitial and vacancy is established by estimating expressions for the thermophysical properties of intrinsic point defects. And the point defect distribution in a Czochralski-grown 200 mm silicon crystal and the location of oxidation-induced stacking fault ring(OiSF-ring) created during the cooling of crystals are calculated by using the numerical analysis. The purpose of this paper is to show that his approach lead to predictions that are consistent with experimental results. Predicted point defect distributions by transient point defect dynamic analysis are in good qualitative agreement with experimental data under widely and abruptly varying crystal pull rates when correlated with the position of the OiSF-ring .

• Proceedings of the Optical Society of Korea Conference
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• 1997.08a
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• pp.85-85
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• 1997

Czochralski 방법에 의해 육성된 Nd:YAG 단결정으로부터 CW mode의 1064nm laser를 발진시켰다. 육성된 단결정은 직경 50mm, 길이 120mm 이었으며, Nd 이온 농도는 O.2~0.9at% 이었다. 육성된 단결정 boule로 부터 결정학적 결함부위인 core 및 facet가 없는 양질의 단결정 부위를 Twyman-Green interferometer로 선빌하였다. 추출핀 부위는 절단, 가공, 연마공정 및 코팅 공정을 통해 직경 6.35mm, 길이 lOOmm의 laser rod를 제작하였다. 절단은 core drill, 또는 원통 연삭기를 사용하여 rod 형태로 가공하였으며, 상$\cdot$하면 polishing은 평행도 10", 직각도 5', 평활도 $\lambda$/10 수준까지 실험실에서 자체 가공하여 일반적인 laser 발진용 rod의 spec.을 만족시킬 수 있었다.

• Korean Journal of Metals and Materials
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• v.47 no.11
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• pp.734-739
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• 2009

It is well known that the temperature and the flow pattern of the crystal-melt interface affect the qualities of the single crystal in the Czochralski process. Thus the temperature profile in the growth system is very important information. This work focuses on controlling the temperature of the silicon melt with a thermal gradient of the crucible. Therefore, the side heater is divided into three parts and an extra heater is added at the bottom for thermal gradient. The temperature of the silicon melt can be strongly influenced and controlled by the electric power of each heater.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.211-217
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• 2001

Czochralski법에 의한 ZnWO₄단결정을 [100], [101], [001] 방향으로 성공적으로 성장시켰다. 각 축 방향에 따른 성장조건이 rotation speed, pulling rate, 성장된 결정의 직경 등의 변수를 가지고 조사되어졌다. 성장된 결정의 냉각시 발생되는 균열을 annealing 효과에 의하여 방지할 수 있었다. 성장된 결정의 방위는 Laue back reflection으로 결정하였다. 각 축 방향으로 성장된 결정의 미세구조적 특징이 논하여졌으며, 경도, 열팽창계수 및 유전상수의 물리적 특성이 평가되어졌다.