• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.1
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• pp.43-50
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• 1992

$ LiNbO_3$ single crystals were grown using the Czochralski Method at various pulling speeds. Macroscopic defects such as cracks, bubbles and cellular structures were observed in some crystals. Cracks and bubbles observed in the crystals depended on the pulling speed and cooling rate. $ LiNbO_3$ crystals of about 15mm diameter could be grown properly at 6-7mm/h pulling speed and $ 20^{circ}C/h$ cooling rate. In order to investigate dielectric properties and optical properties for device application, these properties were measured for the sample cut along a axis and c axis at different temperatures.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.113-116
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• 1998

A numerical study was performed on the fluid flow in the melt of the cold model for Czochralski growth system. The fluid flow in the melt of Woods metal with crucible diameter of 20cm was calculated using a three dimensional finite difference method. Since the crucible size is large, fully turbulent model as well as laminar model was used in the calculation. The effects of crucible rotation rate, crystal rotation rate and wall temperature difference on the velocity and temperature distribution were also investigated. For the purpose of verifying the results of calculation, a cold model experiment using Woods metal was also conducted and the velocity distribution in the melt of the model was measured.

• Journal of the Korean Ceramic Society
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• v.26 no.1
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• pp.37-42
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• 1989

Periodic layered domain structures in doped LiNbO3 crystals grown by Czochralski method were obtained by thermal fluctuation and crystal rotation with inhomogeneous radial temprature distribution. The stressinduced domain formation mechanism model was suggested and discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.381-383
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• 1999

First topic of this paper aims to clarify how oxygen and heat transfer in silicon melt under cusp-shaped magnetic fields. We obtained asymmetric temperature distribution by using time dependent and three-dimensional calculation. Second topic is study on molecular dynamics simulation, which was carried out to estimate diffusion constants of oxygen in silicon melt.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.79.2-79
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• 2000

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.544-549
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• 1998

The single crystal of $KMgCl_3$ was grown in Ar atmosphere by Czochralski method for the first time. For the stoichiometric composition, $K_2MgCl_4$ crystal was obtained, and the nonstoichiometric method was used for the $KMgCl_3$ crystal growth. The phase transition sequences of $KMgCl_3$ were investigated by the DTA, DSC and the ferroelastic properties by using the high temperature polarizing microscope and the thermomechanical system. The temperature dependences of the ferroelastic domains and the spontaneous strain obtained from the stress-strain hysteresis loops were analyzed.

• Journal of Sensor Science and Technology
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• v.17 no.3
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• pp.217-222
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• 2008

$BaCl_2$ crystals were grown by using the Czochralski method, and their scintillation properties were measured. The emission spectrum was located in the range of $370{\sim}450$ nm, peaking at about 400 nm. The fluorescence decay time was approximately 75.9 ns for 662 keV ${\gamma}$-rays excitation. The energy resolution was about 24.4 % for $^{137}Cs$ 662 keV ${\gamma}$-rays, and the ${\alpha}/{\beta}$ ratio to $\alpha$ particles from a $^{210}Po$ 5.4 MeV was about 0.25.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.645-648
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• 2010

The structure and morphology of epitaxial layer defects in epitaxial Si wafers produced by the Czochralski method were studied using focused ion beam (FIB) milling, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Epitaxial growth was carried out in a horizontal reactor at atmospheric pressure. The p-type Si wafers were loaded into the reactor at about $800^{\circ}C$ and heated to about $1150^{\circ}C$ in $H_2$. An epitaxial layer with a thickness of $4{\mu}m$ was grown at a temperature of 1080-$1100^{\circ}C$. Octahedral void defects, the inner walls of which were covered with a 2-4 nm-thick oxide, were surrounded mainly by $\{111\}$ planes. The formation of octahedral void defects was closely related to the agglomeration of vacancies during the growth process. Cross-sectional TEM observation suggests that the carbon impurities might possibly be related to the formation of oxide defects, considering that some kinds of carbon impurities remain on the Si surface during oxidation. In addition, carbon and oxygen impurities might play a crucial role in the formation of void defects during growth of the epitaxial layer.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.272-275
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• 2000

Starting from the stoichiometric composition of $K_2$CO$_3$: Li$_2$CO$_3$: Nb$_2$O$_5$=3 : 2 : 5 with the mole ratio, $K_3$LiNb$_6$O$_17$ 17/ single crystals were grown using the Czochralski method. Although the starting melt composition corresponds to the $K_3$Li$_2$Nb$_5$O$_15$ crystals, the chemical composition of the as grown crystals appears to be $K_2.95$Li$_1.33$Nb$_6.17$O$_17$ or $K_2.60$Li$_1.17$Nb$_{5.44}$ 5.44/O$_{15}$ which relatively contain fewer Li ions than $K_3$Li$_2$Nb$_5$O$_15$ crystals. We investigated the influence of the deficiency of the Li ions in the tetragonal tungsten bronze structure through the measurements of DE loop, temperature dependent dielectric constant, differential thermal analysis and temperature dependent X-ray diffraction pattern.

• Journal of Radiation Protection and Research
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• v.34 no.2
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• pp.83-86
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• 2009

The single crystal scintillator of bismuth germinate ($Bi_4Ge_3O_{12}$:BGO) was successfully grown by the conventional Czochraski technique. The characteristics of the grown BGO were evaluated and presented on the excitation, emission responses and energy spectra of the $\gamma$-rays from $^{241}Am$, $^{133}Ba$, $^{57}Co$, $^{22}Na$, $^{137}Cs$ and $^{54}Mn$ radio-isotopes. The energy resolution of grown BGO, $\Delta$E/E, was estimated to be 12.1% at 662 keV of $\gamma$-ray for $^{137}Cs$ nuclide. Compared to the commercial BGO crystal, we confirmed that the grown BGO has a good performance and is comparable to reference one.