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CHARACTERISTICS EVALUATION AND GROWTH OF $BI_4GE_3O_{12}$ SINGLE CRYSTAL BY CZOCHRALSKI METHOD  

Cho, Yun-Ho (Department of Nuclear Engineering, Hanyang University)
Kim, Yong-Kyun (Department of Nuclear Engineering, Hanyang University)
Lee, Woo-Gyo (Department of Nuclear Engineering, Hanyang University)
Kang, Byoung-Hwi (Department of Nuclear Engineering, Hanyang University)
Kim, Jong-Kyung (Department of Nuclear Engineering, Hanyang University)
Lee, Dong-Hoon (Department of Nuclear Engineering, Hanyang University)
Park, Jae-Woo (Department of Nuclear and Energy Engineering, Cheju University)
Publication Information
Journal of Radiation Protection and Research / v.34, no.2, 2009 , pp. 83-86 More about this Journal
Abstract
The single crystal scintillator of bismuth germinate ($Bi_4Ge_3O_{12}$:BGO) was successfully grown by the conventional Czochraski technique. The characteristics of the grown BGO were evaluated and presented on the excitation, emission responses and energy spectra of the $\gamma$-rays from $^{241}Am$, $^{133}Ba$, $^{57}Co$, $^{22}Na$, $^{137}Cs$ and $^{54}Mn$ radio-isotopes. The energy resolution of grown BGO, $\Delta$E/E, was estimated to be 12.1% at 662 keV of $\gamma$-ray for $^{137}Cs$ nuclide. Compared to the commercial BGO crystal, we confirmed that the grown BGO has a good performance and is comparable to reference one.
Keywords
BGO Single Crystal; Scintillator; Czochralski Method; Energy Resolution;
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1 Takagi K, Oi T, Fukazawa T, Ishii M and Akiyama S. Improvement in the scintillation conversion efficiency of$Bi_{4}Ge_{3}O_{12}$single crystals. J. Crystal Growth 1981;52:584- 587   DOI   ScienceOn
2 Takagi K and Fukazawa T. Effect of growth conditions on the shape of $Bi_{4}Ge_{3}O_{12}$ single crystals and melt flow patterns. J. Crystal Growth 1986;76:328-338   DOI   ScienceOn
3 Hu G, Wang S, Li Y, Xu L and Li P. The influence of temperature gradient on energy resolution of $Bi_{4}Ge_{3}O_{12}$(BGO) crystal. Ceram. Int. 2004;30:1665-1668   DOI   ScienceOn
4 Murthy RVA, Ravikumar M, Choubey A, Lal K, Kharachenko L, Shleguel V, and Guerasimov V. Growth and characterization of large-size bismuth germinate single crystals by low thermal gradient Czochralski method. J. Crystal Growth 1999;197:865-873   DOI   ScienceOn
5 DOH SH. Growth and Radiation Damage of BGO Single Crystals. 951-0202-050-1. KOSEF. 1996;1-10
6 Kozma P and Kozma P Jr. Radiation resistivity of BGO crystals due to low-energy gamma-rays. Nucl. Instr. and Meth. A 2003;501:499-504   DOI   ScienceOn
7 Vaithianathan V, Kumaragurubaran S, Santhanaraghavan P, Muralidhar N, Kumar R, Sinha AK, Ramasamy P and Nagarajan T, Growth and structural study of bismuth germinate single crystal and its energy resolution. Mater Chem Phys. 2002;74:121-125   DOI   ScienceOn
8 Schmid F, Khattak CP, and Smith MB. Growth of bismuth germanate crystals by the heat exchanger method. J. Crystal Growth 1984;70:446-470   DOI   ScienceOn