• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.39-43
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• 2012

This paper presents a study on the design of a pulling module for silicon ingot and an apparatus of manufacturing silicon single crystal ingot using the same method. The pulling module is conceptually designed by using TRIZ. Czochralski method(CZ) is representative way to manufacture single crystal ingot for wafers. The seed can be broken by high tension which is caused by large weight of a silicon ingot. The solution of this problem has been derived using 6SC(6 steps creativity)TRIZ. The pulling module is actuated by DC motor and rollers. High tension in the seed is removed by the rotate-elevate motion of rollers in the pulling module. A rubber belt is included in the rotate-elevate mechanism for increasing friction between rollers and silicon ingot.

• The Bulletin of The Korean Astronomical Society
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• v.44 no.1
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• pp.84.3-84.3
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• 2019

We investigate 3D radiation-hydrodynamics (RHD) for surface convection of the solar-type low-mass stars (M = 0.8, 0.9, and 1.0 Msun). The outer convection zone (CZ) of low-mass stars is an extremely turbulent region composed of partly ionized compressible gases at high temperature. Particularly, the super-adiabatic layer (SAL), the top of the CZ is the transition region where the transport of energy changes drastically from convection to radiation. In order to accurately describe physical processes, a realistic treatment of radiation should be considered as well as convection. As a starting model, the initial stratification in the outer envelope calculated using the solar calibrations in the context of the standard stellar theory. When the numerical fluid becomes thermally relaxed, the thermodynamic structure of the steady-state turbulent flow was explicitly collected. In this presentation, we compared thermodynamic properties of turbulent convection of the solar-type low-mass stars.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.321.1-321.1
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• 2007

• Proceedings of the Korea Crystallographic Association Conference
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• 2001.05a
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• pp.27-27
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• 2001

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.110-110
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• 1989

• Proceedings of the Korean Vacuum Society Conference
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• 1996.02a
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• pp.177-177
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• 1996

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.367-373
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• 2011

It is described that the proton beam induces micro defects and electronic deep levels in Cz single crystal silicon. Enhance signal-to-noise ratio, Coincidence Doppler Broadening Positron Annihilation Spectroscopy has been applied to study of characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The samples were exposed by 4.0 MeV proton beams ranging from 0 to ${\sim}10^{14}$ ptls. The S-parameter values were increased as increasing the irradiated proton beam, that indicated the defects generate more.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.89-95
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• 2001

The CZ-silicon crystal was annealed at $1350^{\circ}C$ to dissolve the vacancy type grown-in defects. A this temperature, the equilibrium concentration of the oxygen in the silicon crystal is around $1.7{\times}10^{18}$ which induces the oxygen undersaturation in the silicon crystal. This situation results in the faster dissolution of the grown-in defects in the bulk of the silicon wafer than near the surface. This indicates the possibility that the presence of the higher concentration of silicon interstitial hinders the dissolution of the grown-in defects, which were known to compose of the vacancy clusters with surrounding silicon oxide film. This expectation was confirmed by the observation that the slower dissolution of the grown-in defects near the surface of the silicon wafer in the oxygen atmosphere than in the argon atmosphere. This result is quite opposite to the previous argument hat presence of the excess silicon interstitial leads to faster dissolution of the vacancy type defects.

• Journal of Microbiology and Biotechnology
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• v.26 no.12
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• pp.2116-2126
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• 2016

Bacterial biofilms are spatially structured communities that contain bacterial cells with a wide range of physiological states. The spatial distribution and speciation of copper in unsaturated Pseudomonas putida CZ1 biofilms that accumulated 147.0 mg copper per g dry weight were determined by transmission electron microscopy coupled with energy dispersive X-ray analysis, and micro-X-ray fluorescence microscopy coupled with micro-X-ray absorption near edge structure (micro-XANES) analysis. It was found that copper was mainly precipitated in a $75{\mu}m$ thick layer as copper phosphate in the middle of the biofilm, while there were two living cell layers in the air-biofilm and biofilm-medium interfaces, respectively, distinguished from the copper precipitation layer by two interfaces. The X-ray absorption fine structure analysis of biofilm revealed that species resembling $Cu_3(PO_4)_2$ predominated in biofilm, followed by Cu-Citrate- and Cu-Glutathione-like species. Further analysis by micro-XANES revealed that 94.4% of copper were $Cu_3(PO_4)_2$-like species in the layer next to the air interface, whereas the copper species of the layer next to the medium interface were composed by 75.4% $Cu_3(PO_4)_2$, 10.9% Cu-Citrate-like species, and 11.2% Cu-Glutathione-like species. Thereby, it was suggested that copper was initially acquired by cells in the biofilm-air interface as a citrate complex, and then transported out and bound by out membranes of cells, released from the copper-bound membranes, and finally precipitated with phosphate in the extracellular matrix of the biofilm. These results revealed a clear spatial pattern of copper precipitation in unsaturated biofilm, which was responsible for the high copper tolerance and accumulation of the biofilm.

• Science of Emotion and Sensibility
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• v.15 no.2
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• pp.259-268
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• 2012

In a P300-based concealed information test (P300 CIT), the result of the test is greatly affected by the value of the probe stimulus. With a probe stimulus of low value, the detection rate decreases. The aim of this study was to determine whether the pupil-based concealed information test (Pupil CIT) could be used in addition to the P300 CIT for the probes of low value. Participants were told to choose one card from a deck of five cards (space 2, 3, 4, 5, 6), Then a P300 CIT and a Pupil CIT for the selected card were administered. P300s were measured at 3 scalp sites (Fz, Cz, and Pz), and the pupil sizes of left and right eyes were recorded. The P300 amplitude measured at Fz, Cz, and Pz was significantly different between the probe and irrelevant stimuli. And, in the Pupil CIT, the pupil size was also different between the two stimuli for both eyes. The detection rates of the P300 CIT were 44% at Fz and Cz sites and 36% at Pz site. And the detection rates of the Pupil CIT were 52% for the left eye and 60% for the right eye. There is a trend that the detection rate of the Pupil CIT was higher than that of the P300 CIT, but the difference didn't reach significance partly because of the relatively small sample size. The correlation between the decision based on the P300 CIT and that based on the Pupil CIT was not significant. As a conclusion, it is recommended to use a Pupil CIT instead of a P300 CIT when the value of the probe is low. And a combination of the measures may be superior to either one of them in detection rate.