• 제목/요약/키워드: Cut-off diodes

검색결과 8건 처리시간 0.021초

A New Dual-Active Soft-Switching Converter for an MTEM Electromagnetic Transmitter

  • Wang, Xuhong;Zhang, Yiming;Liu, Wei
    • Journal of Power Electronics
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    • 제17권6호
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    • pp.1454-1468
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    • 2017
  • In this study, a new dual-active soft-switching converter is proposed to improve conversion efficiency and extend the load range for an MTEM electromagnetic transmitter in geological exploration. Unlike a conventional DC/DC converter, the proposed converter can operate in passive soft-switching, single-active soft-switching, or dual-active soft-switching modes depending on the change in load power. The main switches and lagging auxiliary switches of the converter can attain soft-switching over the entire load range. The conduction and switching losses are greatly reduced compared with those of ordinary converters under the action of the cut-off diodes and auxiliary windings coupled to the main transformer in the auxiliary circuits. The conversion efficiency of the proposed converter is significantly improved, especially under light-load conditions. First, the working principle of the proposed converter is analyzed in detail. Second, the relationship between the different operating modes and the load power is given and the design principle of the auxiliary circuit is presented. Finally, the Saber simulation and experimental results verify the feasibility and validity of the converter and a 50 kW prototype is implemented.

국제규격 대응 컴퓨터 네트워크용 서지방호장치 개발에 관한 연구 (A Study on the Surge Protection Device for Computer Networks by International Standards)

  • 박대원;서황동;송재용;한주섭;길경석
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2005년도 춘계종합학술대회
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    • pp.277-280
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    • 2005
  • This paper dealt with the development of a surge protection device (SPD) that can protect high speed computer network devices from overvoltages caused by switching operations or lightning surges. The designed SPD is a form of hybrid circuit which is composed of a gas tube having large current diverting capability, high response bi-directional avalanche diodes, and fast recovery diodes to reduce insertion loss on high frequency domain. Surge protection and signal transmission characteristics of the fabricated SPD was tested according to the international standards, IEC 61000-4-5 and IEC 61643-21. From the test results, the SPD is satisfied with the international standards and the high cut-off frequency was 204MHz. Also, the SPD showed a good performance without an insertion loss on a field test of 100Mbps class Local Area Network

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A New Resistance Model for a Schottky Barrier Diode in CMOS Including N-well Thickness Effect

  • Lee, Jaelin;Kim, Suna;Hong, Jong-Phil;Lee, Sang-Gug
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권4호
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    • pp.381-386
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    • 2013
  • A new resistance model for a Schottky Barrier Diode (SBD) in CMOS technology is proposed in this paper. The proposed model includes the n-well thickness as a variable to explain the operational behavior of a planar SBD which is firstly introduced in this paper. The model is verified using the simulation methodology ATLAS. For verification of the analyzed model and the ATLAS simulation results, SBD prototypes are fabricated using a $0.13{\mu}m$ CMOS process. It is demonstrated that the model and simulation results are consistent with measurement results of fabricated SBD.

Effect of Oxygen Flux on FTO Thin Films Using DC and RF Sputtering

  • Park, Eun Mi;Lee, Dong Hoon;Suh, Moon Suhk
    • Applied Science and Convergence Technology
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    • 제24권2호
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    • pp.41-46
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    • 2015
  • Transparent conductive oxides (TCOs) are essential material in optoelectronics such as solar cells, touch screens and light emitting diodes. Particularly TCOs are attractive material for infrared cut off film due to their high transparency in the visible wavelength range and high infrared reflectivity. Among the TCO, Indium tin oxide has been widely used because of the high electrical conductivity and transparency in the visible wavelength region. But ITO has several limitations; expensive and low environmental stability. On the other hands, fluorine doped tin oxide (FTO) is well known for low cost, weather ability and stable in acidic and hydrogen. In this study, two different magnetron sputtering techniques with RF and DC modes at room temperature deposition of FTO thin film was conducted. The change of oxygen content is influence on the topography, transmittance and refractive index.

국제규격 대응 컴퓨터 네트워크용 서지방호장치 개발 (Development of a Surge Protective Device for Computer Network to International Standards)

  • 박대원;송재용;한주섭;길경석
    • 한국정보통신학회논문지
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    • 제9권6호
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    • pp.1253-1259
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    • 2005
  • 본 논문은 외부의 서지로부터 컴퓨터 네트워크회로의 보호를 위한 서지방호장치에 대하여 기술하였다. 서지방호장치는 동작속도가 빠른 아발란시 다이오드와 에너지 내량이 큰 가스튜브의 하이브리드형으로 구성하였으며, 고주파 대역에서의 삽입손실을 줄이기 위하여 고속회복 다이오드를 사용하였다. 제안한 서지전압 차단장치의 성능 평가를 위하여 국제규격 IEC 61000-4-5 및 IEC 61643-21에 따라 서지차단특성과 신호전송 특성평가를 수행하였다. 실험결과로부터 본 서지차단장치는 국제규격에 제시된 서지차단특성을 만족하였으며, -3dB의 고역차단 주파수가 204 MHz로 100 Mbps급 근거리 통신네트워크에 적합한 특성을 나타내었다.

VVC 다이오드의 시작연구(II) (Fabrication of silicon Voltage Variable Capacitance Diode-II)

  • 정만영;박계영
    • 대한전자공학회논문지
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    • 제7권2호
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    • pp.33-42
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    • 1970
  • 액상과 고상의 불순물원을 사용한 이중확산법을 이용하여 초분수형 p-n 접합 VVC다이오드를 열작하고 그 특성을 측정하였다. 먼저 접합부근의 불순물분포를 지수난수로 근사시키고 여기에서 부터 유도되는 인가전압대 접태용총번계, 접합부에서의 섬계로계강도, 규재주파수 등을 고려하여 WC 다이오드외 새로운 담계수법을 위시하였다. 이 설계도표는 원하는 특성의 VVC다이오드를 번표와에서 나접 설계 할수있으므로 매우 사리하다. VVC다이오드는 2.5ohnm-cm의 n형, 실리콘박편위에 도너불순물 POCl3를 사용하여 선을 확정시키고, 다시 억셉터 불순물 BN을 사용하여 붕소를 확산시켜서, 접합깊이 2미크론에 초단계형접합을 만드므로서 제작하였다. 본연구에서 텔레비젼 수상기튜너용으로 시작한 다이오드의 최대용량대 총소용량의 비는 4:1이였고 그외의 전기적 제 특성도 이론적으로 설계한 값들과 거의 합치된 결과를 얻었다. 한편 이때의 실리콘 박편의 제작법과 확산기술에 관하여 간단히 기술하였다.

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광섬유와 LED를 활용한 마카쥬(marquage) 기법의 스마트 토트백 개발 (Development of Smart Tote Bags with Marquage Techniques Using Optical Fiber and LEDs)

  • 박진희;김상진;김주용
    • 패션비즈니스
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    • 제25권1호
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    • pp.51-64
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    • 2021
  • The purpose of this study was to develop smart bags that combining fashion-specific trends and smart information technologies such as light-emitting diodes(LED) and optic fibers by grafting marquage techniques that have recently become popular as part of eco-fashion. We applied e-textiles by designing leather tote bags that could show off LED luminescence. A total of two tote bags, a white-colored peacock design and a black-colored paisley design, divided the LED's light-emitting method into two types, incremental lighting and random light-emission to suit each design, and the locations of the optical fibers were also reversed depending upon the design. The production of circuits for the LEDs and optical fibers was based on the design, and a flexible conductive fabric was laser-cut instead of wire line and attached to the circuit-line location. A separate connector was underwent three-dimensional(3D)-modeling and was connected to high-luminosity LEDs and optic fiber bundles. The optical fiber logo part expressed a subtle image using a white-colored LED, which did not offset the LED's sharp luminous effects, suggesting that using LEDs with fiber optics allowed for the expression of each in harmony without being heterogeneous. Overall, the LEDs and fiber optic fabric were well-harmonized in the fashion bag using marquage techniques, and there was no sense of it being a mechanical device. Also, the circuit part was made of conductive fabric, which is an e-textile product that feels the same as a thin, flexible fabric. The study confirmed that the bag was developed as a smart wearable product that could be used in everyday life.

Pt/AlGaN Schottky-Type UV Photodetector with 310nm Cutoff Wavelength

  • 김보균;김정규;박성종;이헌복;조헌익;이용현;한윤봉;이정희;함성호
    • 센서학회지
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    • 제12권2호
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    • pp.66-71
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    • 2003
  • Pt/AlGaN Schottky-type UV photodetectors were designed and fabricated. A low-temperature AlGaN interlayer buffer was grown between the AlGaN and GaN film in the diode structure epitaxy to obtain crack-free AlGaN active layers. A comparison was then made of the structural, electrical, and optical characteristics of two different diodes: one with an AlGaN($0.5\;{\mu}m$)/n+-GaN(2 nm) structure (type 1) and the other with an AlGaN($0.5\;{\mu}m$)/AlGaN interlayer($150\;{\AA}$)/n+-GaN($3\;{\mu}m$) structure(type 2). A crack-free AlGaN film was obtained by the insertion of a low-temperature AlGaN interlayer with an aluminum mole fraction of 26% into the $Al_xGa_{1-x}N$ layer. The fabricated Pt/$Al_{0.33}Ga_{0.67}N$ photodetector had a leakage current of 1 nA for the type 1 diode and $0.1\;{\mu}A$ for the type 2 diode at a reverse bias of -5 V. For the photoresponse measurement, the type 2 diode exhibited a cut-off wavelength of 300 nm, prominent responsivity of 0.15 A/W at 280 nm, and UV-visible extinction ratio of $1.5{\times}10^4$. Accordingly, the Pt/$Al_{0.33}Ga_{0.67}N$ Schottky-type ultraviolet photodetector with an AlGaN interlayer exhibited superior electrical and optical characteristics and improved UV detecting properties.