• Title/Summary/Keyword: Cut-Off Frequency

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Suggestion of Cutoff Frequency in the Washout Filter for a Wheel type Excavator (주행감각 재현을 위한 휠굴삭기용 Washout 필터 설계 및 한계값 추정)

  • Kim, Kwang-Suk;Yoo, Wan-Suk;Lee, Min-Cheol;Son, Kown;Lee, Jang-Myung;Choi, Dae-Hyoung;Park, Min-Gyu;Park, Hyoung-Ho
    • Journal of the Korean Society for Precision Engineering
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    • v.16 no.5 s.98
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    • pp.19-28
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    • 1999
  • In this study, a real-time simulation system and a washout algorithm for an excavator have been developed for a driving simulator with six degrees of freedom. The excavator model consisting of a boom. bucket, upper frame, lower frame and four wheels, has total 11 degrees of freedom. The suggested washout algorithm consists of high and low pass filters with second order. The high pass filters cut off low frequency of the motion cues limited by platform motion. The cut off frequency for the tilt coordination are suggested for a realistic regeneration of excavator motion.

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High Performance 50 nm Metamorphic HEMTs for Millimeter-wave Applications (밀리미터파 응용을 위한 우수한 성능의 50 nm Metamorphic HEMTs)

  • Ryu, Keun-Kwan;Kim, Sung-Chan
    • Journal of IKEEE
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    • v.16 no.2
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    • pp.116-120
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    • 2012
  • We reported on a high performance InGaAs/InAlAs metamorphic HEMT with 50 nm gate length on a GaAs substrate. The fabricated $50nm{\times}60{\mu}m$ MHEMT showed good DC and RF characteristics. Typical drain current density of 740 mA/mm and extrinsic transconductance(gm) of 1.02 S/mm were obtained with our devices. The current gain cut-off frequency(fT) and maximum oscillation frequency(fmax) obtained for the fabricated MHEMT device were 430 GHz and 406 GHz, respectively.

High Frequency Noise Reduction Method Using a Newly Designed Low-pass Filter in DFT-Based Phasor Estimation (DFT 기반 페이저 연산 시 새로운 저역통과필터를 이용한 고주파 노이즈 경감 방법)

  • Baek, Min-Woo;Kang, Sang-Hee
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.6
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    • pp.898-904
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    • 2017
  • DFT(Discrete Fourier Transform) is one of the most widely used method to estimate the phasor of a relaying signal. The harmonics are eliminated by the DFT. However, high frequency components, except for harmonics, are not removed and cause an error in DFT-based phasor estimation process. This paper suggests high frequency noise reduction method by using a newly designed low-pass filter to estimate a signal phasor. When selecting a stop-band cut-off frequency of the low-pass filter, high frequency components generated by faults are considered. To reduce the phasor estimation delay caused by a low-pass filter, this paper proposes a low-pass filter whose settling time is reduced. An adverse effect of high frequency noise on DFT-based phasor estimation is reduced. To evaluate the performance of the proposed method, signals which are collected under a fault condition at a 345[kV] transmission system modeled by EMTP-RV are used.

A Study on Series Arc Detection Using Band-pass Filters (대역통과필터를 이용한 직렬아크 검출에 관한 연구)

  • Kim, Il-Kwon;Kim, Jin-Su;Park, Keon-Woo;Kim, Kwang-Soon;Kim, Young-Il
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1345-1347
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    • 2008
  • This paper described a method of determining whether arcing is present in a low-voltage wiring system. We simulated the series arcing that generated in electrical loads and fabricated a arc detection module which can discriminate between normal and arcing state. The module consists of a high-pass filter with a low cut-off frequency of 3 kHz to attenuate power frequency voltage and an active band-pass filter with a frequency of 4 kHz ${\sim}$ 8 kHz to detect series arc signals only. We tested an Incandescent lamp that was controlled by a dimmer and analysed. The module consists of a high-pass filter with a low cut-off frequency of 3 kHz to attenuate power frequency voltage by 80 dB and an active band-pass filter with a frequency of 4 kHz to detect series arc signals only. From the experimental results, we could detect series arc signals without an influence of non-linear loads.

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A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs

  • Lim, Jong-Won;Ahn, Ho-Kyun;Ji, Hong-Gu;Chang, Woo-Jin;Mun, Jae-Kyoung;Kim, Hae-Cheon;Cho, Kyoung-Ik
    • ETRI Journal
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    • v.27 no.3
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    • pp.304-311
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    • 2005
  • We report on the fabrication of an AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) using a dielectric-defined process. This process was utilized to fabricate $0.12\;{\mu}m\;{\times}\;100 {\mu}m$ T-gate PHEMTs. A two-step etch process was performed to define the gate footprint in the $SiN_x$. The $SiN_x$ was etched either by dry etching alone or using a combination of wet and dry etching. The gate recessing was done in three steps: a wet etching for removal of the damaged surface layer, a dry etching for the narrow recess, and wet etching. A structure for the top of the T-gate consisting of a wide head part and a narrow lower layer part has been employed, taking advantage of the large cross-sectional area of the gate and its mechanically stable structure. From s-parameter data of up to 50 GHz, an extrapolated cut-off frequency of as high as 104 GHz was obtained. When comparing sample C (combination of wet and dry etching for the $SiN_x$) with sample A (dry etching for the $SiN_x$), we observed an 62.5% increase of the cut-off frequency. This is believed to be due to considerable decreases of the gate-source and gate-drain capacitances. This improvement in RF performance can be understood in terms of the decrease in parasitic capacitances, which is due to the use of the dielectric and the gate recess etching method.

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Realization of Folded Ridge Waveguide Using Y-type Structure and Transition of Folded Ridge Waveguide (Y형 구조물을 통해 구현된 접힌 Ridge 도파관 및 접힌 Ridge 도파관의 트랜지션)

  • Tae-Soon Yun
    • The Journal of the Korea institute of electronic communication sciences
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    • v.19 no.1
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    • pp.19-24
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    • 2024
  • In this paper, in order to realize lower cut-off frequency of the waveguide, the folded Ridge waveguide (FRWG) is suggested by alternating T-shape structure in the conventional folded waveguide with Y-shape structure. Suggested FRWG can be equivalent by the reverse Ridge waveguide. As the height of side of the FRWG is lower, the width of side is increased. Therefore, the cut-off frequency of the FRWG can be decreased more than half compared with conventional waveguide. The FRWG is designed with the length, height, and width of Y-shape structure of 40mm, 20mm, and 2mm, respectively. Designed FRWG has the cut-off frequency of the 1.996GHz. Also, the transition between the FRWG and SMA connector is designed. The transition is optimized by the capacitance of the signal line of the connector. Its result shows the VSWR under 2:1 in the band of 2.064 ~ 3.050 GHz. Suggested FRWG can be applied with miniaturization of various waveguide devices.

Variable Cut-off Frequency and Variable Sample Rate Small-Area Multi-Channel Digital Filter for Telemetry System (텔레메트리 시스템을 위한 가변 컷 오프 주파수 및 가변 샘플 레이트 저면적 다채널 디지털 필터 설계)

  • Kim, Ho-keun;Kim, Jong-guk;Kim, Bok-ki;Lee, Nam-sik
    • Journal of Advanced Navigation Technology
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    • v.25 no.5
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    • pp.363-369
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    • 2021
  • In this paper, We propose variable cut-off frequency and variable sample rate small-area multi-channel digital filter for telemetry system. Proposed digital filter reduced hardware area by implementing filter banks that can variably use cut-off frequency and sample rate without additional filter banks for an arbitrary cut ratio. In addition, We propose the architecture in which sample rate can variably be selected according to the number of filters that pass through the multiplexer control. By using time division multiplexing (TDM) supported by the finite impulse response (FIR) intellectual property (IP) of Quartus, the proposed digital filter can greatly reduce digital signal processing (DSP) blocks from 80 to 1 compared without TDM. Proposed digital filter calculated order and coefficients using Kaiser window function in Matlab, and implemented using very high speed integrated circuits hardware descryption language (VHDL). After applying to the telemetry system, we confirmed that the proposed digital filter was operating through the experimental results in the test environment.

A Numerical Study of the Effects of Design Parameter upon Fan Performance and Noise (원심홴의 설계 변수가 홴의 성능과 소음에 미치는 영향의 수치적 연구)

  • Jeon, Wan-Ho;Lee, Duck-Joo
    • The KSFM Journal of Fluid Machinery
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    • v.2 no.3 s.4
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    • pp.45-51
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    • 1999
  • Centrifugal fans are widely used and the noise generated by these machines causes one of the most serious problems. In general, the centrifugal fan noise is often dominated by tones at BPF(blade passage frequency) and its higher harmonics. This is a consequence of the strong interaction between the flow discharged from the impeller and the cutoff in the casing. However, only a few researches have been carried out on predicting the noise due to the difficulty in obtaining detailed information about the flow field and casing effects on noise radiation. The objective of this study is to develop a prediction method for the unsteady flow field and the acoustic pressure field of a centrifugal fan and to calculate the effects of rotating velocity, flow rate, cut-off distance and the number of blades and its effects on the noise of the fan. We assume that the impeller rotates with a constant angular velocity and the flow field around the impeller is incompressible and inviscid. So, a discrete vortex method (DVM) is used to model the centrifugal fan and to calculate the flow field. The force of each element on the blade is calculated with the unsteady Bernoulli equation. Lowson's method is used to predict the acoustic source. The cut-off distance is the most important factor effecting the noise generation. Acoustic pressure is proportional to 2.8, which shows the same scaling index as the experimental result. In this paper, the cut-off distance is found to be the dominant parameter offecting the acoustic pressure.

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A Study on Magnetized Inductively Coupled Plasma Using Cutoff Probe (Cutoff Probe를 이용한 자화유도결합 플라즈마의 특성 연구)

  • Son, Eui-Jeong;Kim, Dong-Hyun;Lee, Ho-Jun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.10
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    • pp.1706-1711
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    • 2016
  • Electromagnetic wave simulation was performed to predict characteristics of manufactured cutoff probe at low temperature magnetized plasma medium. Microwave cutoff probe is designed for research the properties of magnetized inductively coupled plasma. It was shown that the cutoff probe method can safely be used for weakly magnetized high density plasma sources. Cutoff probe system with two port network analyzer has been prepared and applied to measure electron density distributions in large area, 13.56MHz driven weakly magnetized inductively coupled plasma source. The results shown that, the plasma frequency confirmed cut-off characteristics in low temperature plasma. Especially, cut-off characteristics was found at upper hybrid resonance frequency in the environment of the magnetic field. In case of a induced weak magnetic field in inductively coupled plasma, plasma density estimated from the cutoff frequency in the same way at unmagnetized plasma due to nearly same plasma frequency and upper hybrid resonance frequency. The plasma density is increased and uniformity is improved by applying a induced weak magnetic field in inductively coupled plasma.

Effects of Rapid Thermal Annealing Temperature on Performances of Nanoscale FinFETs

  • Sengupta, M.;Chattopadhyay, S.;Maiti, C.K.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.9 no.4
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    • pp.266-272
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    • 2009
  • In the present work three dimensional process and device simulations were employed to study the performance variations with RTA. It is observed that with the increase in RTA temperature, the arsenic dopants from the source /drain region diffuse laterally under the spacer region and simultaneously acceptors (Boron) are redistributed from the central axis region of the fin towards the Si/SiO2 interface. As a consequence both drive current and peak cut-off frequency of an n-FinFET are observed to improve with RTA temperatures. Volume inversion and hence the flow of carries through the central axis region of the fin due to reduced scattering was found behind the performance improvements with increasing RTA temperature.