• Title/Summary/Keyword: Current crowding

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The Analysis of DC and AC Current Crowding Effects Model in Bipolar Junction Transistors Using a New Extraction Method (새로운 측정방법을 이용한 바이폴라 트랜지스터에서의 직류 및 교류 전류 편중 효과에 관한 해석)

  • 이흥수;이성현;김봉렬
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.8
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    • pp.46-52
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    • 1994
  • DC and AC current crowding effects for microwave and high speed bipolar transistors are investigated in detail using a new and accurate measurement technique based on Z-parameter equationa. Using the new measurement technique dc and ac current crowding effects have been explained clearly in bipolar junction transistors. To model ac crowding effects a capacitive element defined as base capacitance (C$_b$), called ac crowding capacitance is added to base resistance in parallel thereby treating the base resistance(R$_b$) as base impedance Z$_b$. It is shown that base resistance decreases with increasing collector current due to dc current crowding and approaches to a certain limited value at high collector current due to current crowding and approaches to a certain limited value at high collector currents regardless of the emitter size. It is also observed that due to ac current crowding base capacitance increases with increasing collector current. To quantigy the ac crowding effects for SPICE circuit simulation the base capacitance(C$_b$) including the base depletion and diffusion components has been modeled with an analytical expression form.

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Reduction of Current Crowding in InGaN-based Blue Light-Emitting Diodes by Modifying Metal Contact Geometry

  • Kim, Garam;Kim, Jang Hyun;Park, Euyhwan;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.5
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    • pp.588-593
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    • 2014
  • Current crowding problem can worsen the internal quantum efficiency and the negative-voltage ESD of InGaN-based LEDs. In this paper, by using photon emission microscope and thermal emission microscope measurement, we confirmed that the electric field and the current of the InGaN-based LED sample are crowded in specific regions where the distance between p-type metal contact and n-type metal contact is shorter than other regions. To improve this crowding problem of electric field and current, modified metal contact geometry having uniform distance between the two contacts is proposed and verified by a numerical simulation. It is confirmed that the proposed structure shows better current spreading, resulting in higher internal quantum efficiency and reduced reverse leakage current.

Improvement of Current Uniformity by Adjusting Ohmic Resitivity on the Surface in Light Emitting Diodes (발광 다이오드에서 분균일 전극의 Ohmic특성을 이용한 전류분포 균일도 향상)

  • Hwang, Seong-Min;Yun, Ju-Seon;Sim, Jong-In
    • Proceedings of the Optical Society of Korea Conference
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    • 2008.02a
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    • pp.93-94
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    • 2008
  • In order to suppress the current crowding in light emitting diodes (LEDs) grown on sapphire substrate, the effect of nonuniform contact resistivity between TME layer and p-GaN layer on the LED surface was theoretically investigated. The analysis results showed that current crowding occurring around p-electrode could be considerably improved, which in turn would be helpful to improve the electrostatic discharge (ESD) characteristic.

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Visitor Adjustment and Coping Behavior for Use Level in a Recreational Setting - A Case Study of Bukhansan National park - (휴양환경 이용수준에 대한 방문객의 적응 및 대응행동 - 북한산 국립공원 소귀천 탐방로를 대상으로 -)

  • 허학영;안동만
    • Journal of the Korean Institute of Landscape Architecture
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    • v.30 no.6
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    • pp.38-46
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    • 2003
  • Perceived crowding is known as a necessary method to evaluate social carrying capacity in recreational settings. But according to the results of previous research, perceived crowding, use density, and satisfaction have shown weak and indirect correlations. The theory of visitors’ adjustment is one of several possible explanations for this poor relation. But the validity of the visitors’ adjustment theory has not been not inspected clearly. Therefore, the purposes of this study are to understand visitors’ adjustment theory and to examine visitors’ adjustment to the overuse of recreational settings. Study hypotheses were formulated through literature review and related to visitors’ adjustment in recreation density. Pour hypotheses were established and inspected with the case study, i.e., Rationalization : Visitors’ satisfaction isn't related to use density in recreation setting, 2) Product-shift : Preference norm is related to current use density, 3) Self-selection : Visitors’ satisfaction for the use level is generally high, and 4) Displacement : Norm interference is related to willingness to revisit. The case study was conducted during May and June,2001. According to the results of this survey, visitors adjust to overuse of recreation setting through rationalization and product shift (hypotheses l/2 acceptance). Current use density isn't related to visitors’ satisfaction and willingness to revisit (see table 3). And visitors’ preference norm is modified by situation (see table 4). Visitors’ satisfaction and willingness to revisit don't show a high correlation but moderately high (see table 5, hypothesis 3 acceptance). Differences between visitors’ preference norm and current use density is norm interference. Norm interference isn't related to willingness to revisit (see table 7). Therefore, the norm interference concept is not a useful method to explain visitors’ adjustment to the degree of overuse in a recreational setting (hypothesis 4 rejection). As for future directions, the following are proposed: 1) correctly understanding and reestablishing the visitor norm and norm interference concept, 2) introducing a composite research method to monitor visitors’ behavior and survey visitors’ attitudes and coping responses. These efforts would be helpful in the Planning and management of recreational settings to improve the quality of visitors’ experiences.

Fluorescence Microscopy of Condensed DNA Conformations of Bacterial Cells

  • Suleymanoglu, Erhan
    • Journal of Microbiology
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    • v.40 no.4
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    • pp.319-326
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    • 2002
  • Cellular DNA in prokaryotes is organized in nucleic acid-protein self-assemblies referred to as the nucleoid. The physical forces responsible for its stability inside the poor solvent properties of the cytoplasm and their functional implications are not understood. Studies on the organisation and functioning of the cytosol of cells largely rely on experimental protocols performed in highly dilute solutions using biochemically purified molecules, which is not a reliable substitute for the situation existing in vivo. Our current research interest is focused on the characterization of biological and physical forces determining the compaction and phase separation of DNA in Escherichia coli cytoplasm. We have emphasized the effect of excluded volume in solutions with high macromolecular concentrations (macromolecular crowding) upon self-association patterns of reactions. The prokaryotic cytosol was simulated by addition of inert polymer polyethylene glycol (PEG) (average molecular weight 20000), as an agent which afterwards facilitates the self-association of macromolecules. Fluorescence microscopy was used for direct visualization of nucleoids in intact cells, after staining with DAPI (4',6-diamidino-2-phenylindole dihydrochloride). Addition of the crowding agent PEG 20,000, in increasing concentrations generated progressively enhanced nucleoid compaction, the effect being stronger in the presence of 0.2 M NaCl and 5 mM MgCl$\_$2/. Under these conditions, the nucleoids were compacted to volumes of around 2 ㎛$\^$3/ or comparable sizes with that of living cells.

4H-SiC Curvature VDMOSFET with 3.3kV Breakdown Voltage (3.3kV 항복 전압을 갖는 4H-SiC Curvature VDMOSFET)

  • Kim, Tae-Hong;Jeong, Chung-Bu;Goh, Jin-Young;Kim, Kwang-Soo
    • Journal of IKEEE
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    • v.22 no.4
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    • pp.916-921
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    • 2018
  • In this paper, we analyzed the power MOSFET devices for high voltage and high current operation. 4H-SiC was used instead of Si to improve the static characteristics of the device. Since 4H-SiC has a high critical electric field due to wide band gap, 4H-SiC is more advantageous than Si in high voltage and high current operation. In the conventional VDMOSFET structure using 4H-SiC, the breakdown voltage is limited due to the electric field crowding at the edge of the p-base region. Therefore, in this paper, we propose a Curvature VDMOSFET structure that improves the breakdown voltage and the static characteristics by reducing the electric field crowding by giving curvature to the edge of the p-base region. The static characteristics of conventional VDMOSFET and curvature VDMOSFET are compared and analyzed through TCAD simulation. The Curvature VDMOSFET has a breakdown voltage of 68.6% higher than that of the conventional structure without increasing on-resistance.

An Improved Extraction Method for Splitting Base-Collector Capacitance in Bipolar Transistor Equivalent Circuit Model (바이폴라 트랜지스터 등가회로 모델의 베이스-컬렉터 캐패시턴스 분리를 위한 개선된 추출 방법)

  • 이성현
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.7
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    • pp.7-12
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    • 2004
  • An improved extraction method considering ac current crowding effect is investigated to determine intrinsic ( $C_{\mu}$) and extrinsic ( $C_{\mu}$) base-collector capacitances of bipolar junction transistors separately. The drawbacks of conventional methods are pointed out, and the improved extraction equations are derived from a cutoff mode equivalent circuit with the ac crowding capacitance. The frequency response curves of modeled current and power gains using the extracted values of $C_{\mu}$ and $C_{\mu}$ have much better agreements with measured ones than those of the conventional methods, verifying the accuracy of the improved technique.

Social Supports from Organization and Customer: An Integrated Model

  • Yoo, Jaewon
    • Asia Marketing Journal
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    • v.16 no.2
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    • pp.1-14
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    • 2014
  • This study applies the job-demands resource (JD-R) model to investigate the interactive effect of job demands and job resources in predicting the development of service employee work engagement and customer-oriented attitude. This paper proposed a theoretical model that suggests that the service employee's work engagement is the consequence of the employee's perceived support from the organization and its customers (customer participation) and leads to a customer-oriented attitude. However, the effect of organizational support is somewhat hindered by job insecurity, demonstrating the inability of an organizationally provided job resource to overcome the job demand of job insecurity. As a type of job demand from customer's perspective, customer crowding is suggested as a negative moderator in the link between customer participation and work engagement. As such, this article proposes how different elements of a service employee's work environment interact to ultimately influence the service employee's customer-oriented attitude. Specifically, the current research focuses on how the negative contextual elements of job insecurity and job crowding (i.e., job demands) interact with the potentially positive elements of organizational support and customer participation (i.e., job resources), as well as with an employee's customer orientation, to ultimately develop a customer-oriented attitude. This study concludes with some propositions for potential causal relationships among key constructs that can be empirically tested in future research, as well as implications of the current study for both managers and researchers.

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Fabrication and Characterization of a GaN Light-emitting Diode (LED) with a Centered Island Cathode

  • Park, Yun Soo;Lee, Hwan Gi;Yang, Chung-Mo;Kim, Dong-Seok;Bae, Jin-Hyuk;Cho, Seongjae;Lee, Jung-Hee;Kang, In Man
    • Journal of the Optical Society of Korea
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    • v.16 no.4
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    • pp.349-353
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    • 2012
  • Uniform spreading of injection current in light-emitting diodes (LEDs) is one of the crucial requirements for better device performances. It is reported that non-uniform current spreading leads to low output power, high current crowding, heating, and reliability degradation of the LED device. This paper reports on the effects of different surface and electrode geometries in the LEDs. To increase the output power of LEDs and reduce the series resistance, a rectangular-type LED (RT-LED) with a centered island cathode has been fabricated and investigated by comparison with a conventional LED (CV-LED). The performances of RT-LEDs were prominently enhanced via uniform current spreading and low current crowding. Performances in terms of increased output power and lower forward voltage of simulated RT-LEDs are much superior to those of CV-LEDs. Based on these results, we investigated the correlation between device geometries and optical characteristics through the fabricated CV and RT-LEDs. The measured output power and forward voltage of the RT-LEDs at 100 mA are 64.7% higher and 8% smaller compared with those of the CV-LEDs.

Electromigration Characteristics in PSG/SiO$_2$ Passivated Al-l%Si Thin Film Interconnections

  • Kim, Jin-Young
    • Journal of Korean Vacuum Science & Technology
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    • v.7 no.2
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    • pp.39-44
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    • 2003
  • Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to a quarter micron and below, which results in the high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in PSG(phosphosilicate glass)/SiO$_2$ passivated Al-l%Si thin film interconnections. Straight line patterns, wide and narrow link type patterns, and meander type patterns, etc. were fabricated by a standard photholithography process. The main results are as follows. The current crowding effects result in the decrease of the lifetime in thin film interconnections. The electric field effects accelerate the decrease of lifetime in the double-layered thin film interconnections. The lifetime of interconnections also depends upon the current conditions of P.D.C.(pulsed direct current) frequencies applied at the same duty factor.

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