Fig. 5. Output characteristics of each structure at 5V gate bias. 그림 5. 5V 게이트 전압에서 각 구조별 output 특성
Fig. 1. (a) 기존, (b) 쉴드 (c) 곡률 VDMOSFET structure. 그림 1. (a) Conventional, (b) Shielded (c) Curvature VDMOSFET 구조
Fig. 2. (a) Conventional, (b) Shielded, (c) Curvature VDMOSFET electric field distribution. 그림 2. (a) 기존, (b) 쉴드, (c) 곡률 VDMOSFET 전계 분포
Fig. 3. (a) Conventional, (b) Shielded, (c) Curvature VDMOSFET strength of electric field according to depth. 그림 3. (a) 기존, (b) 쉴드, (c) 곡률 VDMOSFET 깊이에 따른 전계의 세기
Fig. 4. (a) Conventional, (b) Shielded, (c) Curvature VDMOSFET breakdown voltage. 그림 4. (a) 기존, (b) 쉴드, (c) 곡률 VDMOSFET 항복 전압
Table 1. Curvature VDMOSFET parameter 표 1. 곡률 VDMOSFET 파라미터
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