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An Improved Extraction Method for Splitting Base-Collector Capacitance in Bipolar Transistor Equivalent Circuit Model  

이성현 (한국외국어대학교 전자정보공학부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.41, no.7, 2004 , pp. 7-12 More about this Journal
Abstract
An improved extraction method considering ac current crowding effect is investigated to determine intrinsic ( $C_{\mu}$) and extrinsic ( $C_{\mu}$) base-collector capacitances of bipolar junction transistors separately. The drawbacks of conventional methods are pointed out, and the improved extraction equations are derived from a cutoff mode equivalent circuit with the ac crowding capacitance. The frequency response curves of modeled current and power gains using the extracted values of $C_{\mu}$ and $C_{\mu}$ have much better agreements with measured ones than those of the conventional methods, verifying the accuracy of the improved technique.
Keywords
bipolar transistors; parameter extraction; capacitance measurement; modeling; small-signal model;
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1 D. Berger, N. Gambetta, D. Cell, and C. Dufaza, 'Extraction of the base-collector capacitancesp-litting along the base resistance using HF measurements,' in Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meet., pp. 180-183, 2000   DOI
2 S. Lee, 'A New Technique to Extract Intrinsic and Extrinsic Base-Collector Capacitances of Bipolar Transistors Using Y-Parameter Equations,' in Proc. IEEE Int. Conf. on Microelectronic Test Structures, pp.133-136, 2003   DOI
3 M.P.J.G. Versleijen, 'Distributed high frequency effects in bipolar transistors,' in Proc. IEEE Bipolar Circuits and Technology Meet., pp. 85-88, 1991   DOI
4 B. Ardouin, T. Zimmer, H. Mnif, and P. Fouillat 'Direct method for bipolar base-emitter and base-collector capacitance splitting using high frequency measurements,' in Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meet., pp. 114-117, 2001   DOI
5 H.C. de Graaff, W.J. Kloosterman, J.A.M. Geelen, and M.C.A.M. Koolen, 'Experience with the new compact MEXTRAM model for bipolar transistors,' in Proc. IEEE Bipolar Circuits and Technology Meet., pp. 246-249, 1989   DOI
6 S. Lee, H. K. Yu, C. S. Kim, J. G. Koo, and K. S. Nam, 'A novel approach to extracting small-signal model parameters of silicon MOSFETs,' IEEE Microwave and Guided Wave Lett., vol. 7, pp. 75-77, March 1997   DOI   ScienceOn
7 S. Lee, B. R. Ryum, and S. W. Kang, 'A new parameter extraction technique for small-signal equivalent circuit of polysilicon emitter bipolar transistors,' IEEE Trans. Electron Device, vol. 41, pp. 233-238, Feb. 1994   DOI   ScienceOn
8 H.-S. Rhee, S. Lee, and B.R. Kim, 'DC and AC current crowding effects model analysis in bipolar junction transistors using a new extraction method,' Solid-State Electronics, vol. 38, no.1, pp.31-35, 1995   DOI   ScienceOn
9 A. Koldehoff, M. Schroter, and H.-M. Rein, 'A compact bipolar transistor model for very-high-frequency applications with special regard to narrow emitter stripes and high current densities,' Solid State Electron., vol. 36, pp. 1035-1048, July 1993   DOI   ScienceOn