• Title/Summary/Keyword: Current Path Distribution

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A Study on the Current Detector with Non Contact Type (비접촉식 전류 검출 장치에 관한 연구)

  • Kim, Ki-Joon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.5
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    • pp.351-356
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    • 2018
  • Commonly, a live-line alarm can be used to measure the electric field strength of a high-voltage system to calculate its current, but it is hard to detect the electric field of shielded cables or concealed structures, such as underground distribution cables. Current sensors can detect the magnetic field in a single core wire, but they cannot determine the magnetic field about a double-core wire because the currents flow in opposite directions. Therefore, it is very difficult to detect certain current problems, such as a fault current in an extension line comprised of a double line. In this paper, to ultimately develop a sensor that can detect the current regardless of line conditions, we used a simulation to determine the concentration of the magnetic field dependent on the distribution of the external magnetic field and the path of each line's core.

Conduction Path Dependent Threshold Voltage for the Ratio of Top and Bottom Oxide Thickness of Asymmetric Double Gate MOSFET (비대칭 이중게이트 MOSFET의 상하단 산화막 두께비에 따른 전도중심에 대한 문턱전압 의존성)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.11
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    • pp.2709-2714
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    • 2014
  • This paper has analyzed the change of threshold voltage and conduction path for the ratio of top and bottom gate oxide thickness of asymmetric double gate MOSFET. The asymmetric double gate MOSFET has the advantage that the factor to be able to control the current in the subthreshold region increases. The analytical potential distribution is derived from Poisson's equation to analyze the threshold voltage and conduction path for the ratio of top and bottom gate oxide thickness. The Gaussian distribution function is used as charge distribution. This analytical potential distribution is used to derive off-current and subthreshold swing. By observing the results of threshold voltage and conduction path with parameters of bottom gate voltage, channel length and thickness, projected range and standard projected deviation, the threshold voltage greatly changed for the ratio of top and bottom gate oxide thickness. The threshold voltage changed for the ratio of channel length and thickness, not the absolute values of those, and it increased when conduction path moved toward top gate. The threshold voltage and conduction path changed more greatly for projected range than standard projected deviation.

A FLOW AND PRESSURE DISTRIBUTION OF APR+ REACTOR UNDER THE 4-PUMP RUNNING CONDITIONS WITH A BALANCED FLOW RATE

  • Euh, D.J.;Kim, K.H.;Youn, Y.J.;Bae, J.H.;Chu, I.C.;Kim, J.T.;Kang, H.S.;Choi, H.S.;Lee, S.T.;Kwon, T.S.
    • Nuclear Engineering and Technology
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    • v.44 no.7
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    • pp.735-744
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    • 2012
  • In order to quantify the flow distribution characteristics of APR+ reactor, a test was performed on a test facility, ACOP ($\underline{A}$PR+ $\underline{C}$ore Flow & $\underline{P}$ressure Test Facility), having a length scale of 1/5 referring to the prototype plant. The major parameters are core inlet flow and outlet pressure distribution and sectional pressure drops along the major flow path inside reactor vessel. To preserve the flow characteristics of prototype plant, the test facility was designed based on a preservation of major flow path geometry. An Euler number is considered as primary dimensionless parameter, which is conserved with a 1/40.9 of Reynolds number scaling ratio. ACOP simplifies each fuel assembly into a hydraulic simulator having the same axial flow resistance and lateral cross flow characteristics. In order to supply boundary condition to estimate thermal margins of the reactor, the distribution of inlet core flow and core exit pressure were measured in each of 257 fuel assembly simulators. In total, 584 points of static pressure and differential pressures were measured with a limited number of differential pressure transmitters by developing a sequential operation system of valves. In the current study, reactor flow characteristics under the balanced four-cold leg flow conditions at each of the cold legs were quantified, which is a part of the test matrix composing the APR+ flow distribution test program. The final identification of the reactor flow distribution was obtained by ensemble averaging 15 independent test data. The details of the design of the test facility, experiment, and data analysis are included in the current paper.

DESIGN OF OPERATOR FOR SEARCHING TRAFFIC DEPENDENT SHORTEST PATH IN A ROAD NETWORK

  • Lee Dong Gyu;Lee Yang Koo;Jung Young Jin;Ryu Keun Ho
    • Proceedings of the KSRS Conference
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    • 2005.10a
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    • pp.759-762
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    • 2005
  • Recently, Intelligent Transportation System(ITS) has been applied to satisfy increasing traffic demand every year and to solve many traffic problems. Especially, Advanced Traveller Information System(ATIS) is a transportation system to optimize the trip of each other vehicle. It is important to provide the driver with quick and comfortable path from source to destination. However, it is difficult to provide a shortest path in a road network with dynamic cost. Because the existing research has a static cost. Therefore, in this paper we propose an operator for searching traffic dependent shortest path. The proposed operator finds the shortest path from source to destination using a current time cost and a difference cost of past time cost. Such a method can be applied to the road status with time. Also, we can expect a predicted arrival time as well as the shortest path from source to destination. It can be applied to efficiently application service as ITS and have the advantages of using the road efficiently, reducing the distribution cost, preparing an emergency quickly, reducing the trip time, and reducing an environmental pollution owing to the saving the fuel.

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Arc Fusion Protection of Covered Conductors Using AFPD (섬락 단선 방지 장치에 의한 피복 절연 가공배전 선로의 유도뢰애 의한 단선 방지)

  • Lee, Yong-Han;Jung, Dong-Hak;Ha, Bok-Nam;NamKung, Do;Kim, Myong-Soo
    • Proceedings of the KIEE Conference
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    • 1997.07c
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    • pp.800-802
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    • 1997
  • After flashover occurs on the overhead distribution line by lighting strokes(direct or induced), the power frequency arc current continues. If lightning flashover occurs on the overhead lines using covered conductors, the power frequency art current with fixed path overheats the conductor, and arc fusion fault can be occurred. There are two categories protecting or reducing methods of arc fusion faults caused by lightning stokes. - Reducing lightning flashover rate : G/W, LA, etc. - Protection by AFPD(Arc Fusion Protection Device) : power follow current interruption. This paper presents lightning surge phenomena on overhead distribution lines and protecting performance of arc fusion Protection devices to the lightning strokes nearby overhead line.

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Cathode Side Engineering to Raise Holding Voltage of SCR in a 0.5-㎛ 24 V CDMOS Process

  • Wang, Yang;Jin, Xiangliang;Zhou, Acheng;Yang, Liu
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.6
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    • pp.601-607
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    • 2015
  • A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.

Analysis on the Induced Lightning Shielding Effect According to the Neutral Wire Installation Structure of a 22.9kV Distribution Line (22.9kV 배전선로 중성선 설치 구조에 따른 유도뢰 차폐효과 분석)

  • Kim, Jeom-Sik;Kim, Do-Young;Park, Yong-Beom
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.59 no.2
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    • pp.191-196
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    • 2010
  • The electricity distribution system in Korea is adopting a multi-grounding system. Protection of this distribution system against lightning is performed by installing overhead ground wires over the high voltage wires, and connecting the overhead ground wires to the ground every 200 m. The ground resistance in this system is limited not to exceed $50\Omega$ and overhead ground wire and neutral wire are multiple parallel lines. Although overhead ground wire and neutral wire are installed in different locations on the same pole, this circuit configuration has duplicated functions of providing a return path for unbalanced currents and protecting the distribution system against induced lightning. Therefore, the purpose of this study is to analyze the induced lightning shielding effect according to the neutral wire installation structure of a 22.9kV distribution line in order to present a new 22.9kV distribution line structure model and characteristics. This study calculated induced lightning voltage by performing numerical analysis when an overhead ground wire is present in the multi-grounding type 22.9kV distribution line structure, and calculated the induced lightning shielding effect based on this calculated induced lightning voltage. In addition, this study proposed and analyzed an improved distribution line model allowing the use of both overhead wire and neutral wire to be installed in the current distribution lines. The result of MATLAB simulation using the conditions applied by Yokoyama showed almost no difference between the induced lightning voltage developed in the current line and that developed in the proposed line. This signifies that shielding the induced lightning voltage through overhead wire makes no difference between current and proposed distribution line structures. That is, this study found that the ground resistance of the overhead wire had an effect on the induced lightning voltage, and that the induced lightning shielding effect of overhead wire is small.

Resistive Superconducting Fault Current Limiters for Distribution systems using YBCO thin films (YBCO 박막을 이용한 배전급 저항형 초전도 한류기)

  • Lee, B.W.;Park, K.B.;Kang, J.S.;Kim, H.M.;Oh, I.S.;Shim, J.W.;Hyun, O.B.
    • Progress in Superconductivity
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    • v.7 no.2
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    • pp.114-119
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    • 2006
  • High critical current density, high n value, multiple faults endurances, and fast recovery characteristics of YBCO thin films are very attractive characteristics for developing resistive type superconducting fault current limiters. But due to the limited current and voltage ratings of one YBCO module, it is needed to construct series and parallel module connections for high capacity electric networks. Especially for distribution network, more than 30 units should be connected in series to meet voltage level. So in order to construct distribution-level superconducting fault current limiter, simultaneous quench in one YBCO thin films should be realized, and furthermore, quench should be occurred in all fault current limiting units equally to avoid local heating and failures. In this paper, we proposed optimum design of YBCO thin films for fault current limiting module and technical method using shunt resistor to achieve simultaneous quench between multi current limiting units. From the analytical and the experimental results, optimal current path and thickness of shunt material was determined for YBCO thin films and shunt resistor between modules was developed. Finally, 14 kV one phase resistive fault current limiter using multi YBCO thin films was constructed and it was possible to get satisfactory test results.

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Design and Analysis of Digital Circuit System Considering Power Distribution Networks (파워 분배망을 고려한 디지털 회로 시스템의 설계와 분석)

  • Lee, Sang-Min;Moon, Gyu;Wee, Jae-Kyung
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.4
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    • pp.15-22
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    • 2004
  • This paper presents the channel analysis considering power distribution network(PDN) system of PCB. For achieve the target PDN system we proposed the useful design approach for acquiring the characteristic target of power distribution network in overall frequency ranges. The proposed method is based on the hierarchical approach related to frequency ranges and the path-based equivalent circuit model to consider the interference of the current paths between the decoupling capacitors and the board through it is a lumped model for fast and easy calculation, experimental results show that the proposed model is almost as precise as the numerical analysis. The analysis of PDN system shows that although the effective inductance of package dominatly affects the power noise and the signal transfer through data channel, the board PDNs also can not be neglected for achieving the accurate channel signaling. Therefore, we must design concurrently the chip, package, and board from the initial spec design of high speed digital system.

Effects of Grain-Size Distribution on the Breakdown Voltage in ZnO Varistors (입도분포가 ZnO 바리스터의 임계전압에 미치는 영향)

  • 김경남;한상목;김대수
    • Journal of the Korean Ceramic Society
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    • v.30 no.3
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    • pp.199-205
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    • 1993
  • Effects of grain size distribution on the breakdown voltage of ZnO varistors were investigated in the ZnO-Bi2O3-CoO-Sb2O3 and ZnO-Bi2O3-CoO-Sb2O3-Cr2O3 systems, respectively. The grain size was increased with increasing sintering temperature maintaining lognormal distribution in both systems. The width of grain size distribution of ZnO-Bi2O3-CoO-Sb2O3 system was narrower than that of ZnO-Bi2O3-CoO-Sb2O3 system. The breakdown voltage(Vb) was decreased by increasing sintering temperature(1000~135$0^{\circ}C$) and sintering time(0.5~5hr), due to the enhancement of ZnO grain growth. The current path of the ZnO varistor was dependent on the distribution of the largest grains (chains of long grains) between the electrodes.

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