• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1061-1064
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• 2009

Through dark injection space-charge-limited current (DI-SCLC) and trap-free SCLC measurements, it has been demonstrated that an indium tin oxide (ITO)/buckminsterfullerene ($C_{60}$) electrode can form a quasi-Ohmic contact with N, N'-bis (naphthalen-1-yl)-N, N'-bis(phenyl) benzidine (NPB). The DI-SCLC results show a clear peak current along with a shift of the peak position as the field intensity varies, implying an Ohmic (or quasi-Ohmic) contact. A theoretical simulation of the SCLC also shows that ITO/$C_{60}$ forms an Ohmic contact with NPB. The Ohmic contact makes it possible to estimate the NPB hole mobility through the use of both DI-SCLC and trap-free SCLC analysis. This also contributes to a reduction in power consumption.

• 대한전자공학회논문지
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• 제12권4호
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• pp.35-40
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• 1975

ZnTe-lnSb Heterojunction을 계면합금법으로 제작했다. Insb의 In이 ZnTe결정에 확산되어 계면에 고저항 ZnTe충을 성장시켜 P-i-n구조를 갖고 있으며 전류수송기구는 p형 ZnTe 가전자대로부터 고저항 ZnTe충에 주입된 Hole의 SCLC기구에 의존된다. 순방향과 역방향 전압을 인가할때 실온에서 오런지색 전 장발장이 관측되었다. The Zn7e-lnSb heterojunctions was prepared by interface alloying technique. The structure of this beterojunction had p-i-n which semi-insulating ZnTe laver at interface of this heterojunction was formed by diffusing In of InSb into ZnTe crystal. The current transport mechanism of this heterojunction was Spacecharge-Limited-Current(SCLC) mechanism by hole at semi-insulating ZnTe layer. The hole wart injected from valence band of p- type SnTe crystal. Orange color electroluminescence was observed at this heterojunction when forward and reversed bias voltage applied.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.533-534
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• 2005

Temperature-dependent current-voltage characteristics of organic light-emitting diodes(OLEDs) were studied in a device structure of ITO/TPD/$Alq_3$/Al. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-l,1'-diphenyl-4,4'-diamine(TPD) as a hole transport and tris(8-hydroxyquinoline) aluminum($Alq_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10K and 300K. We analyzed an electrical conduction mechanism of the OLEDs using space-charge-limited current(SCLC) and Fowler-Nordheim tunneling.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.327.2-327.2
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• 2016

유기물/무기물 나노 복합체를 이용한 전자 소자는 간단한 공정과 고집적 및 플렉시블 응용 가능성으로 차세대 전자 소자로서 응용 연구가 많이 시도되고 있다. 무기물의 경우 전하 전송 메커니즘과 전기적 특성에 영향을 미치는 다양한 요인들에 대한 연구가 많이 진행되었지만 유기물의 경우 소자의 특성에 집적적으로 영향을 미치는 요인들에 대한 이론적 연구가 미흡하다. 본 연구에서는 금속/유기물 경계면의 전하전송, 트랩밀도 및 전하 이동도가 소자의 전기적 특성에 어떠한 영향을 미치는지 분석하였다. 유기 메모리 소자의 전하 전송 메커니즘을 분석하기 위해 PMMA에 나노 입자를 분산시킨 유기-나노 복합층을 사용하여 유기 메모리 소자를 제작하였고 SCLC 이론을 이용하여 전기적 특성을 분석하였다. 또한 전극과 유기-나노 복합층 사이에 C60 층을 삽입하여 트랩밀도와 전하이동도가 유기물 전자 소자에 어떻게 영향을 미치는지에 대한 이론적인 연구를 하였다. SCLC 이론을 이용하여 계산한 current density -voltage (J-V) 특성 이론값과 실험값의 비교 분석으로 유기물전자 소자의 전기적 동작 특성에 대한 메커니즘을 규명하였으며, 유기물 메모리 소자에서 트랩밀도와 분포가 전기적 특성에 미치는 영향에 대하여 연구하였다.

• Bulletin of the Korean Chemical Society
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• 제30권12호
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• pp.2895-2898
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• 2009

The complete structural characterization of dehydrodivanillin, an important natural product of interest to the food, cosmetics and aroma industries, has been carried out using multi-dimensional NMR spectroscopic techniques, and its previously $reported^{13}$C-NMR values have been reassigned. Dense and granular thin films of dehydrodivanillin have been grown by sublimation under high vacuum and studied using Scanning Electron Microscopy (SEM), electrical and optical techniques. The transmittance spectra of the films indicate a wide optical band gap of more than 3 eV. Typical J-V characteristics of Glass/ITO/dehydrodivanillin/Al structure exhibited moderate current densities ${\sim}10^{-4}\;A/cm^2$ at voltages > 25 V with an appreciable SCLC mobility of the order of $10^{-6}\;cm^2$/V-s.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.149-152
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• 2000

AC impedance measurements on poly-p-phenylenevinylene (PPV) LEDs in the frequency range between 10 Hz and 10$\^$6/ Hz were carried out. The complex-plane impedance spectra indicate that PPV devices can be represented by equivalent circuits that corresponds to the bulk and interfacial regions at high and low frequencies, respectively. As a result of complex impedance analysis through the separation of bulk and interfacial region impedances, increase of forward bias in Al/PPV/ITO devices gave rise to relative decrease of the interfacial region impedance. Above the electric field of 10$\^$6/ V/cm the PPV device showed a space charge limited current (SCLC) conduction. The dependence of the transport mechanism and dielectric properties on the applied bias voltage is discussed.

• 대한전자공학회논문지
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• 제18권2호
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• pp.27-35
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• 1981

본 연구에서는 비정질 갈코게나이트박막의 스위칭과도 특성을 분석하기 위해 공체전하중를 모델에 의한 수식적 이론과 그 이론의 타부성에 따른 실험을 연하였다. 이론과 실험에 대한 분석적인 관찰을 실온에서 비정용 잘코게나이드박막에 전압펄스를 인가할 때 생기는 스위칭과도 특성에 대해 비교하였다. 결과로는 전자스위칭 특성에 대한 단순한 이론적 모델의 형태로 설명할 수 있다. 캐리어의 주입은 스위칭 특성을 유발시키기에 필요하며 주입된 캐리어들은 공간전하제한전류(SCLC)로서 전류 흐름에 기여한다. 그러므로 제안된 전하제어 스위칭 특성은 2중 주입 공간 전하중첩 모델로 해석할 수 있다.

• Journal of the Korean Physical Society
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• 제73권12호
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• pp.1879-1883
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• 2018

We analyzed the deep-trap states of GaN/InGaN ultraviolet light-emitting diodes (UV LEDs) before and after electrical stress. After electrical stress, the light output power dropped by 5.5%, and the forward leakage current was increased. The optical degradation mechanism could be explained based on the space-charge-limited conduction (SCLC) theory. Specifically, for the reference UV LED (before stress), two sets of deep-level states which were located 0.26 and 0.52 eV below the conduction band edge were present, one with a density of $2.41{\times}10^{16}$ and the other with a density of $3.91{\times}10^{16}cm^{-3}$. However, after maximum electrical stress, three sets of deep-level states, with respective densities of $1.82{\times}10^{16}$, $2.32{\times}10^{16}cm^{-3}$, $5.31{\times}10^{16}cm^{-3}$ were found to locate at 0.21, 0.24, and 0.50 eV below the conduction band. This finding shows that the SCLC theory is useful for understanding the degradation mechanism associated with defect generation in UV LEDs.

• 전기의세계
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• 제29권2호
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• pp.111-117
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• 1980

Contacts formed by vacuum evaporation of As-Te-Si-Ge chalcogenide glass onto Al metal (99.9999%) are studied by measuring paralle capacitance C(V), Cp(w), resistance R(V), Rp(w), and I-V characteristics. The fact that contact metal alloying produced high-resistance region is confirmed from the measurements of parallel capacitance and resistance. From the I-V characteristics in the pre-switcing region, it is found that electronic conduction and sitching occurs in the vicinity of metal-amorphous semiconductor interface. From the experimental obsevations, it is concuded that the current flow in the thin film is space-charge limited current (SCLC) due to the tunneling of electrons through the energy barriers.

• Asian Pacific Journal of Cancer Prevention
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• 제13권12호
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• pp.6375-6378
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• 2012

Background: Small-cell lung cancer (also known as SCLC) is an aggressive form and untreated patients generally die within about 3 months. To obtain further insight into mechanism underlying malignancy with this cancer, an miRNA synergistic regulatory network was constructed and analyzed in the present study. Method: A miRNA microarray dataset was downloaded from the NCBI GEO database (GSE27435). A total of 546 miRNAs were identified to be expressed in SCLC cells. Then a miRNA synergistic network was constructed, and the included miRNAs mapped to the network. Topology analysis was also performed to analyze the properties of the synergistic network. Consequently, we could identified constitutive modules. Further, common target genes of each module were identified with CFinder. Finally, enrichment analysis was performed for target genes. Results: In this study, a miRNA synergistic network with 464 miRNAs and 2981 edges was constructed. According to the topology analysis, the topological properties between the networks constructed by LC related miRNAs and LC unrelated miRNAs were significantly different. Moreover, a module cilque0 could be identified in our network using CFinder. The module included three miRNAs (hsa-let-7c, hsa-let-7b and hsa-let-7d). In addition, several genes were found which were predicted to be common targets of cilque0. The enrichment analysis demonstrated that these target genes were enriched in MAPK signaling pathways. Conclusions: Although limitations exist in the current data, the results uncovered here are important for understanding the key roles of miRNAs in SCLC. However, further validation is required since our results were based on microarray data derived from a small sample size.