• Title/Summary/Keyword: Cuprous oxide film

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$Cu_2O$ p-type oxide-semiconductor film ($Cu_2O$ p-형 산화물반도체 박막)

  • Song, Byeong-Jun;Lee, Ho-Nyeon
    • Proceedings of the KAIS Fall Conference
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    • 2010.11a
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    • pp.356-358
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    • 2010
  • Cuprous oxide ($Cu_2O$)를 기초로 하여 산화 박막 트랜지스터에 대하여 연구를 하였다. 일정한 두께의 cuprous oxide ($Cu_2O$) 박막을 조건별로 열처리 공정을 하고 그에 따른 변화를 측정을 하였다. 그 측정한 결과 중 가장 좋은 열처리 조건으로 열 증착 방식(Vacuum Thermal Evaporation)을 사용하여 cuprous oxide ($Cu_2O$) 비정질 산화 박막 트랜지스터를 제작 및 측정했다.

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Fabrication and Photoelectrochemical Properties of an Oxide Photoanode with Zinc Oxide Nanorod Array Embedded in Cuprous Oxide Thin Film (산화아연 나노막대가 내장된 아산화구리 박막 구조를 이용한 산화물 광양극 제작 및 광전기화학적 특성)

  • Min, Byeongguk;Kim, Hyojin
    • Korean Journal of Materials Research
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    • v.29 no.3
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    • pp.196-203
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    • 2019
  • We report on the fabrication and characterization of an oxide photoanode with a zinc oxide (ZnO) nanorod array embedded in cuprous oxide ($Cu_2O$) thin film, namely a $ZnO/Cu_2O$ oxide p-n heterostructure photoanode, for enhanced efficiency of visible light driven photoelectrochemical (PEC) water splitting. A vertically oriented n-type ZnO nanorod array is first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method and then a p-type $Cu_2O$ thin film is directly electrodeposited onto the vertically oriented ZnO nanorod array to form an oxide p-n heterostructure. The introduction of $Cu_2O$ layer produces a noticeable enhancement in the visible light absorption. From the observed PEC current density versus voltage (J-V) behavior under visible light illumination, the photoconversion efficiency of this $ZnO/Cu_2O$ p-n heterostructure photoanode is found to reach 0.39 %, which is seven times that of a pristine ZnO nanorod photoanode. In particular, a significant PEC performance is observed even at an applied bias of 0 V vs $Hg/Hg_2Cl_2$, which makes the device self-powered. The observed improvement in the PEC performance is attributed to some synergistic effect of the p-n bilayer heterostructure on the formation of a built-in potential including the light absorption and separation processes of photoinduced charge carriers, which provides a new avenue for preparing efficient photoanodes for PEC water splitting.

Characteristics of p-Cu2O/n-Si Heterojunction Photodiode made by Rapid Thermal Oxidation

  • Ismail, Raid A.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.9 no.1
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    • pp.51-54
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    • 2009
  • Transparent Cuprous oxide film was deposited by rapid thermal oxidation (RTO) of Cu at $500^{\circ}C$/45s condition on textured single-crystal n-Si substrate to form $Cu_2O$/n-Si heterojunction photodiode. The Hall effect measurements for the $Cu_2O$ films showed a p-type conductivity. The photovoltaic and electrical properties of the junction at room temperature were investigated without any post-deposition annealing. I-V characteristics revealed that the junction has good rectifying properties. The C-V data showed abrupt junction and a built-in potential of 1 V. The photodiode showed good stability and high responsivity in the visible at three regions; 525 nm, 625-700 nm, and 750nm denoted as regions A, B, and C, respectively.

Photoelectrochemical Characteristics for Cathodic Electrodeposited Cu2O Film on Indium Tin Oxide (음극전착법을 이용한 Cu2O 막의 광전기 화학적 특성)

  • 이은호;정광덕;주오심;최승철
    • Journal of the Korean Ceramic Society
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    • v.41 no.3
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    • pp.183-189
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    • 2004
  • Cuprous oxide (Cu$_2$O) thin films are cathodically deposited on Indium Tin Oxide (ITO) substrate. The as-deposited films were heat-treated at 30$0^{\circ}C$ to obtain Cu$_2$O. After the heat treatment, the film was changed from Cu metal into Cu$_2$O phase. The phase, morphology and photocurrent density of the films were dependent on the preparation conditions of deposition time, applied voltage, and the duration of heat treatment. The Cu$_2$O films were characterized by X-Ray Diffractometer (XRD) and Scanning Electron Microscope (SEM). The apparent grain size of the films formed by the normal method was larger than those grown by the pulse method. The CU$_2$O film what was deposited at -0.7 V for 300 sec and then, calcined at 30$0^{\circ}C$ for 1 h showed the predominant photocurrent density of 1048 $\mu$A/$\textrm{cm}^2$. And the stability of Cu$_2$O electrodes were improved with chemically deposited TiO$_2$ thin films on Cu$_2$O.

Influence of Sputtering Conditions on Properties of Copper Oxide Thin Films (스퍼터링 공정 조건이 산화 구리 박막 특성에 미치는 영향)

  • Cho, Jae Yu;Heo, Jaeyeong
    • Current Photovoltaic Research
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    • v.5 no.1
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    • pp.15-19
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    • 2017
  • The fossil fuel power consumption generates $CO_2$, which causes the problems such as global warming. Also, the increase in energy consumption has accelerated the depletion of the fossil fuels, and renewable energy is attracting attention. Among the renewable energies, the solar energy gets a lot of attention as the infinite clean energy source. But, the supply level of solar cell is insignificant due to high cost of generation of electric power in comparison with fossil fuels. Thus several researchers are recently doing the research on ultra-low-cost solar cells. Also, $Cu_2O$ is one of the applied materials as an absorption layer in ultra-low-cost solar cells. Cuprous oxide ($Cu_2O$) is highly desirable semiconductor oxide for use in solar energy conversion due to its direct band gap ($E_g={\sim}2.1eV$) and a high absorption coefficient that absorbs visible light of wavelengths up to 650 nm. In addition, $Cu_2O$ has several advantages such as non-toxicity, low cost and can be prepared with simple and cheap methods on large scale. In this work, we fabricated the $Cu_2O$ thin films by reactive sputtering method. The films were deposited with a Cu target with variable parameters such as substrate temperature, rf-power, and annealing condition. Finally, we confirmed the structural properties of thin films by XRD and SEM.

A Study on the Application of Anti-Corrosion Techniques on the Surface of Oxygen Free Copper (무산소동의 표면부식 방지기술 적용에 관한 연구)

  • Joo, Hyung-Goun;Lee, Dae-Young;Zhang, Da Quan;Lee, Kang-Yong;Al-Hanash, Essam Khamis Ibrahim
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.33 no.4
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    • pp.425-429
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    • 2009
  • The protection for copper tarnish was developed by surface treatment method and volatile corrosion inhibiting (VCI) technology. The performance of surface treatment and VCI material is also examined in simulated test environment. Benzotriazole (BTAH) solution that contained molybdate showed best performance than others. Usage of VCI materials with surface treatment was more effective. The protection film foamed on the surface of copper was investigated by auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). Molybdate does not participate in the formation of the protective film but promotes the passivation effect. This facilitates the stabilization of the cuprous oxide film, and strengthens the adsorption of BTAH.

Reductive Dissolution of Spinel-Type Iron Oxide by N2H4-Cu(I)-HNO3

  • Won, Hui Jun;Chang, Na On;Park, Sang Yoon;Kim, Seon Byeong
    • Journal of the Korean Ceramic Society
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    • v.56 no.4
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    • pp.387-393
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    • 2019
  • A N2H4-Cu(I)-HNO3 solution was used to dissolve magnetite powders and a simulated oxide film on Inconel 600. The addition of Cu(I) ions to N2H4-HNO3 increased the dissolution rate of magnetite, and the reaction rate was found to depend on the solution pH, temperature, and [N2H4]. The dissolution of magnetite in the N2H4-Cu(I)-HNO3 solution followed the contracting core law. This suggests that the complexes of [Cu+(N2H4)] formed in the solution increased the dissolution rate. The dissolution reaction is explained by the complex formation, adsorption of the complexes onto the surface ferric ions of magnetite, and the effective electron transfer from the complexes to ferric ions. The oxide film formed on Inconel 600 is satisfactorily dissolved through the successive iteration of oxidation and reductive dissolution steps.

A study on the Glass Frit for Thick Film Copper Conductor (후막 구리도체용 유리에 관한 연구)

  • Lee, Joon;Lee, Sang Won
    • Applied Chemistry for Engineering
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    • v.2 no.3
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    • pp.289-299
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    • 1991
  • In order to obtain glasses appropriate to the thick film copper conductors, nine glasses based on both lead borosilicate and leadless borosilicate systems were made and the applicabilities of them were examined in conjunction with the requirements for thick film copper conductors. As the results, it was found that all the glasses are fitted to provide suitable sheet resistance, solderability and solder leach resistance to thick film copper conductors. However, it was turned out that only the lead borosilicate based glasses worked for getting usable aged adhesion strength of copper thick film to the alumina substrate, while copper conductor films made from the other glasses had poor aged adhesion strengths. Particularly cuprous oxide added lead borosilicate glass was considered as one of the most favorable glasses for manufacturing thick film copper conductors.

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Effect of corrosion environment on the SCC of Al-brass tube for vessel (선박용 Al-황동세관의 SCC에 미치는 부식환경의 영향)

  • 임우조;정해규
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.39 no.4
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    • pp.291-297
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    • 2003
  • Al-brass is usually used as the tube material of vessel's heat exchanger for seawater cooling system because it has high thermal conductivity and good mechanical properties and high corrosion resistance due to cuprous oxide (Cu20) layer against seawater. However, Al-brass tubes of heat exchanger for vessel at the actual environment is reported that local corrosion such as stress corrosion cracking occurred by synergism effect between mechanical factor and corrosion environment In this paper, the effect of corrosion environment on the stress corrosion cracking of Al-brass in various NH4OH of 3.5% NaCl solution, under flow by constant displacement tester. Based on the test results, the behavior of polarization, stress corrosion crack propagation and dezincification phenomenon of Al-brass are investigated. The main results are as follows:(1) Increasing range of potential from open circuit potential to repassivation gets lower, as the contain rate of NH4OH gets higher. (2) As contain rate of NH4OH gets higher, SCC of Al-brass is become activation but the protection film(Cu20) of Al-brass is created in 3.5% NaCl solution. (3) According as content of NH4OH increases in 3.5% NaCl solution, the dezincifiction area is spread. It is concluded that dezincification occurred by localized preferential anodic dissolution at stress focusing region.

RF-Magnetron Sputtering을 이용한 $Cu_2O$ Rod 합성

  • Yu, Jae-Rok;Kim, Se-Yun;Jo, Gwang-Min;Kim, Jeong-Ju;Lee, Jun-Hyeong;Heo, Yeong-U
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.475-475
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    • 2013
  • Cuprous oxide ($Cu_2O$)는 밴드갭이 2.17 eV p-type 산화물 반도체로써 태양에너지 변환기, photocatalysis (광촉매작용), 센서, 스위칭 메모리 등 응용이 다양한 재료이다. 산화물 반도체의 기본 특성은 나노/마이크로 범위 안에서 재료의 표면형태, 크기, 구조와 형상 공간방향등에 크게 영향을 받는다. 그렇기 때문에 원하는 $Cu_2O$ 특성을 얻기 위해서 성장 거동을 아는 것은 매우 중요하다. RF 마그네트론 스퍼터법으로 rod 성장 사례는 잘 알려지지 않았다. 그래서 RF 마그네트론 스퍼터법 $Cu_2O$ rod 형성 실험을 통하여 $Cu_2O$ 형성과 성장 거동을 알아보았다. RF 마그네트론 스퍼터법으로 $Cu_2O$ rod를 glass 기판 위에 Cu metal target을 이용하여 형성시켰다. $Cu_2O$ rod 합성을 위해 기판온도 및 산소분압 O2/(Ar+O2)=3%, 5%, 7% 증착시간 등을 변화시켜 실험하였다. 성장된 rod의 분석은 XRD, SEM으로 확인하였다. 성장 거동은 증착온도와 증착시간에 차이를 보였다. 증착온도 $550^{\circ}C$에서 rod가 생성되는 것을 관찰하였다. 증착시간이 길어질수록 rod 길이가 길어지고 일정 시간이 지나면 rod의 길이 성장보다는 두께(폭)가 성장하는 것을 확인하였다. 증착온도 $550^{\circ}C$ 그리고 산소분압 3%, 5%, 7% 조건에서 rod 합성 실험을 하였을 때 3%, 5% 조건에서 rod의 성장을 확인하였다. 이때 3%, 5% 산소분압에 따라 rod의 모양이 변화하였다. 하지만 7% 조건에서는 rod가 성장하지 않았다. 이유는 3%, 5%에서는 Cu metal peak을 확인하였지만, 7% 조건에서는 Cu metal peak이 없었다. 이로부터 Cu metal이 $Cu_2O$ rod 생성에 영향을 미치는 중요한 요소임을 예상할 수 있었다.

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