• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.124-124
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• 1999

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.63-69
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• 2007

We investigated interconnection processes using Cu vias for MEMS sensor packages. Ag paste layer was formed on a glass substrate and used as a seed layer for electrodeposition of Cu vias after bonding a Si substrate with through-via holes. With applying electrodeposition current densities of $20mA/cm^2\;and\;30mA/cm^2$ at direct current mode to the Ag paste seed-layer, Cu vias of $200{\mu}m$ diameter and $350{\mu}m$ depth were formed successfully without electrodeposition defects. Interconnection processes for MEMS sensor packages could be accomplished with Ti/Cu/Ti line formation, Au pad electrodeposition, Sn solder electrodeposition and reflow process on the Si substrate where Cu vias were formed by Cu electrodeposition into through-via holes.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.12
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• pp.1856-1863
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• 2004

In the last 50 years, lead-contained solder materials have been the most popular interconnect materials used in the electronics industry. Recently, lead-free solders are about to replace lead-contained solders for preventing environmental pollutions. However, the reliability of lead-free solders is not yet satisfactory. Several researchers reported that lead-contained solders have a good fatigue property. The others published that the lead-free solders have a longer thermal fatigue life. In this paper, the reason for the contradictory results published on the estimation of fatigue life of lead-free solder is investigated. In the present study, fatigue behavior of 63Sn37Pb, and two types of lead-free solder joints were compared using pseudo-power cycling testing method, which provides more realistic load cycling than chamber cycling method does. Pseudo-power cycling test was performed in various temperature ranges to evaluating the shear strain effect. A nonlinear finite element model was used to simulate the thermally induced visco-plastic deformation of solder ball joint in BGA packages. It was found that lead-free solder joints have a good fatigue property in the small temperature range condition. That condition induce small strain amplitude. However in the large temperature range condition, lead-contained solder joints have a longer fatigue life.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.151-155
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• 2003

The requirements for harsh environment electronic controllers in automotive applications have been steadily becoming more and more stringent. Electronic substrate technologists have been responding to this challenge effectively in an effort to meet the performance, reliability and cost requirements. An effect of the plasma cleaning at the alumina substrate and the IMC layer between $Sn-37wt\%Pb$ solder and Ag-Pd thick film conductor after reflow soldering has been studied. Organic residual carbon layer was removed by the substrate plasma cleaning. So the interfacial adhesive strength was enhanced. As a result of AFM measurement, Ag-Pd conductor pad roughness were increased from 304nm to 330nm. $Cu_6Sn_5$ formed during initial ref]ow process at the interface between TiWN/Cu UBM and solder grew by the succeeding reflow process so the grains had a large diameter and dense interval. A cellular-shaped $Ag_3Sn$ was observed at the interface between Ag-Pd conductor pad and solder. The diameters of the $Ag_3Sn$ grains ranged from about $0.1\~0.6{\mu}m$. And a needle-shaped $Ag_3Sn$ was also observed at the inside of the solder.

• Journal of Welding and Joining
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• v.31 no.3
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• pp.4-10
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• 2013

In electronic industry, the trend of future electronics will be flexible, bendable, wearable electronics. Until now, there is few study on bonding technology and reliability of bonding joint between chip with micro solder bump and flexible substrate. In this study, we investigated joint properties of Si chip with eutectic Sn-58Bi solder bump on Cu pillar bump bonded on flexible substrate finished with ENIG by flip chip process. After flip chip bonding, we observed microstructure of bump joint by SEM and then evaluated properties of bump joint by die shear test, thermal shock test, and bending test. After thermal shock test, we observed that crack initiated between $Cu_6Sn_5IMC$ and Sn-Bi solder and then propagated within Sn-Bi solder and/or interface between IMC and solder. On the other hands, We observed that fracture propated at interface between Ni3Sn4 IMC and solder and/or in solder matrix after bending test.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.91-95
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• 2007

Electromigration characteristics of Sn-3.5Ag flip chip solder bump were analyzed using flip chip packages which consisted of Si chip substrate and electroplated Cu under bump metallurgy. Electromigration test temperatures and current densities peformed were $140{\sim}175^{\circ}C\;and\;6{\sim}9{\times}10^4A/cm^2$ respectively. Mean time to failure of solder bump decreased as the temperature and current density increased. The activation energy and current density exponent were found to be 1.63 eV and 4.6, respectively. The activation energy and current density exponent have very high value because of high Joule heating. Evolution of Cu-Sn intermetallic compound was also investigated with respect to current density conditions.

• Journal of the Korean Society for Heat Treatment
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• v.34 no.6
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• pp.265-271
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• 2021

In this study, anti-tarnishing and corrosion characteristics of a single 𝛽1' and Bangjja Yugi alloy in the Cl^- ion environment before and after potentiostatic electrolysis treatment were compared. Stable and uniform SnO₂ oxide film with several nanometer thickness is formed after potentiostatic electrolysis treatment. In the case of Bangjja Yugi prior to potentiostatic electrolysis (PE) treatment for exposure in Cl^- environment, tarnishing occurs rapidly within 0.5hr, whereas PE treated Bangjja Yugi indicates stable surface without tarnishing up to 3hr. Especially, it is noticeable that anti-tarnishing and corrosion characteristic of PE treated single 𝛽1', which were significantly improved by 3 times and 15 times, respectively, compared to conventional Bangja Yugi.

• Journal of Welding and Joining
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• v.16 no.3
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• pp.157-166
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• 1998

Recently as environmental pollution caused by Pb has posed a serious threat to the global environment, the trend to regulate the usage of Pb in electronic industry is one the rise. Currently, the solder alloy with high Pb content, Sn-37%Pb, is utilized in the electronic assembly therefore, the objective of this study is to develop an alternative solder alloy for the existing Sn-37%Pb solder alloy. First thing, this work choosed Sn-5%Pb-1.5%Ag, Sn-5%Pb-1.5%Ag-x%Bi(x=1~5%) for candidate solder alloys, and examined their properties such as melting range, wettability, microhardness, tensile property, oxidation behavior and microstructure. Wettability was on the same level of Sn-37%Pb. Dissolution of Pb ion in Sn-5%Pb solder was 0.46ppm. This solder alloy revealed cellular dendrite microstructure $\beta$-Sn matrix, Pb-rich phase, Ag/Sn, and Cu/Sn Intermetallic compounds. The range of solidification temperature was within 3$0^{\circ}C$. Also these alloy displayed higher tensile strength and lower elongation than Sn-37%Pb. The resistance of oxidation in Sn-5%Pb-1.5%Ag solder alloy was superior to that of Sn-37%Pb solder alloy. But that of Sn-5%Pb-1.5%Ag-5%Bi solder alloy was equal to that of Sn-37%Pb solder alloy.

• Applied Chemistry for Engineering
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• v.26 no.5
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• pp.526-532
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• 2015

Solar cells with other alternative energies are being importantly recognized related with post-2020 climate change regime formation. In a point of view of materials, solar cells are classified to organic and inorganic solar cells which can provide a plant-scale electricity. In particular, recent studies about compound semiconductor solar cells, such as III-V tandem solar cells, chalcopyrite-series CIGSSe solar cells, and kesterite-series CZTSSe solar cells were rapidly accelerated. In this report, we introduce a research trend and technical issues for the compound semiconductor solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.688-688
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• 2013

Al-doped ZnO (AZO) thin films have attracted a lot of attention as a cheap transparent conducting oxide (TCO) material that can replace the expensive Sn-doped In2O3. In particular, AZO thin films are widely used as a window layer of chalcogenide-based thin film solar cells such as Cu(In,Ga)Se2 and Cu2ZnSnS4 (CZTS). Mostly important requirements for the window layer material of the thin film solar cells are the high transparency and the low sheet resistance, because they influence the light absorption by the activelayer and the electron collection from the active layer, respectively. In this study, we prepared the AZO thin films by RF magnetron sputtering using a ZnO/Al2O3 (98：2wt%) ceramic target, and the effect of the sputtering condition such as the working pressure, RF power, and the working distance on the optical, electrical, and crystallographic properties of the AZO thin films was investigated. The AZO thin films with optimized properties were used as a window layer of CZTS thin film solar cells. The CZTS active layers were prepared by the electrochemical deposition and the subsequent sulfurization process, which is also one of the cost-effective synthetic approaches. In addition, the solar cell properties of the CZTS thin film solar cells, such as the photocurrent density-voltage (J-V) characteristics and the external quantum efficiency (EQE) were investigated.