• Journal of Powder Materials
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• v.19 no.4
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• pp.317-321
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• 2012

In this study, Cu-5Ni-10Sn(wt%) spinodal alloy was manufactured by gas atomization spray forming, and the microstructural features and mechanical properties of Cu-5Ni-10Sn alloy have been investigated during homogenization, cold working and age-hardening. The spray formed Cu-5Ni-10Sn alloy consisted of an equiaxed microstructure with a mixture of solid solution ${\alpha}$-(CuNiSn) grains and lamellar-structure grains. Homogenization at $800^{\circ}C$ and subsequent rapid quenching formed a uniform solid solution ${\alpha}$-(CuNiSn) phase. Direct aging at $350^{\circ}C$ from the homogenized Cu-5Ni-10Sn alloy promoted the precipitation of finely distributed ${\gamma}$' or ${\gamma}-(Cu,Ni)_3Sn$ phase throughout the matrix, resulting in a significant increase in microhardness and tensile strength. Cold working prior to aging was effective in strengthening Cu-5Ni-10Sn alloy, which gave rise to a maximum tensile strength of 1165 MPa. Subsequent aging treatment slightly reduced the tensile strength to 1000-1100 MPa due to annealing effects.

• Korean Journal of Materials Research
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• v.9 no.7
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• pp.747-752
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• 1999

The interfacial reaction and joint properties of Sn-3.5Ag/Cu and Sn-3.5Ag-1Zn/Cu joint were studied. Modified double lap shear solder joints of Sn-3.5Ag and Sn-3.5Ag- lZn solder were aged for 60days at $100^{\circ}C$ and $150^{\circ}C$ and then loaded to failure in shear. The Sn-3.5Ag/Cu had a fast growth rate of the reaction layer in comparison with the Sn-3.5Ag-lZn at the aging temperature of $150^{\circ}C$ Through the SEM/EDS analysis of solder joint, it was proved that intermatallic layer was $Cu_{6}Sn_5$ phase and aged specimens showed that intermatallic layer grew in proportion to $t_{1/2}$, and the precipitate of $Ag_3Sn$ occur to both inner layer and interface of layer and solder. In case of Zn-containing composite solder, $Cu_{6}Sn_{5}$ phase formed at the side of substrate and $Cu_{5}Zn_{8}$ phase formed at the other side in double layer. The shear strength of the Sn-3.5Ag/Cu joint improved by addition of IZn. The strength of the joint increases with strain rate and decreases with aging temperature

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.55-58
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• 2002

The possibility of SnCuX Solder as alternative for Pb-free Solder have been investigated in this study. SnCuX Solder balls(500${\mu}{\textrm}{m}$) were placed on Si-wafer which is Al/Ni/Cu(500nm/$4{\mu}{\textrm}{m}$/$4{\mu}{\textrm}{m}$)UBM layer. After reflow soldering at $250^{\circ}C$, shear strength and microstructure were analyzed. The results showed that the shear strength(500gf) of SnCuX was higher than that of SnCuX at $230^{\circ}C$ and $Cu_6Sn_5$ intermetallic compounds were formed between Cu and SnCuX Solder layers

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.265-269
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• 2003

Sn(또는 SnAg)/Ni(P)와 Sn/Cu 계의 열사이클동안 형성되는 금속간화합물에 의해 유기되는 응력의 변화를 in-situ로 관찰하였다. Sn(또는 SnAg)/Ni(11.7P) 박막은 계면반응으로 인해 $Ni_3P$와 $Ni_3Sn_4$ 상이 형성되고 이때 인장응력이 발생하였으며, 한편, Sn(또는 SnAg)/Ni(3P) 박막의 계면반응에 의해서는 동일한 $Ni_3P$와 $Ni_3Sn_4$ 상이 형성됨에도 불구하고 압축응력이 발생하였다. SmAg를 사용할 때 형성되는 $Ag_3Sn$이 응력에 미치는 영향은 거의 없었다. Sn/Cu 박막의 경우는 계면반응 초기에는 인장응력이 발생하였고 어느 정도 이상 반응이 진전됨에 따라 압축응력이 발생하였고 최종적으로 $Cu_3Sn$ 상이 형성되었다. 초기의 인장응력은 계면에서 원자들의 intermixing 베 의한 것이고 압축응력은 Sn 방향으로 일방향 성장하는 금속간화합물 형성에 기인한다.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.19-24
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• 2000

To make stacked chip packages far high-density packaging of memory chips used in workstations or PC severs, several lead-frames are to be connected vertically. Fer this purpose. Sn or Sn/Ag were electrochemically deposited on Cu lead-frames and their microstructures were examined by XRD and SEM. Then, two specimens were annealed at $250^{\circ}C$ for 10 min. and pressed to be joined. The shear stresses of joined lead-frames were measured fur comparison. In the case of Sn only, $Cu_3Sn$ was formed by the reaction of Sn and Cu lead-frames. In the case of Sn/Ag, besides $Cu_3Sn$. $Ag_3Sn$ was formed by the reaction of Sn and Ag. Compared to joined specimens made from Sn only, those made from Sn/Ag showed 1.2 times higher shear stress. This was attributed to the $Ag_3Sn$ phase formed at the joined interface.

• Journal of the Korean institute of surface engineering
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• v.22 no.1
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• pp.3-9
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• 1989

The intermetallic compount formation, growth rections, and growth kinetices as functions of the aging temperaturess, time, and the condition of substarte have invedtigted in the Sn/Cu and Sn/Ni bimetal couples. The η'-phase (Cu6Sn5) and $\delta$-phase (Ni3Sn4) were only found to grow at 20 and $70^{\circ}C$in the Sn/Cu and Sn/Ni bimetallic coples repectively. Above that temperatures, all other compounds were formed in sequence of high Sn content plase and the metastable Cu41Sn11 was formed at agend $200^{\circ}C$. The ectivation energy for the growth of intermetallic compounds was 14.7Kxal/mole in the Sn/Cu interface and 26.7Kcal/mole in the Sn/Ni interface.

• Proceedings of the KWS Conference
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• 2006.10a
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• pp.169-171
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• 2006

Solderability and reaction properties were investigated for four Pb-free alloys as a function of Ag contents; Sn-4.0Ag-0.5Cu, Sn-3.0Ag-0.5Cu, Sn-2.5Ag-0.5Cu, and Sn-1.0Ag-0.5Cu. The alloy of the lowest Ag content, i.e., Sn-1.0Ag-0.5Cu, showed poor wetting properties as the reaction temperature decreased to 230oC. Variation of Ag concentration in the Sn-xAg-0.5Cu alloy shifted exothermic peaks indicating the undercooling temperature in DSC curve. For the aging process at 170oC, the thickness of IMCs at the board-side solder/Cu interface increased with the Ag concentration.

• Journal of the Korean institute of surface engineering
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• v.36 no.5
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• pp.386-392
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• 2003

The electroplating process for a solder bump which can be applied for a flip chip was studied. Si-wafer was used for an experimental substrate, and the substrate were coated with UBM (Under Bump Metallization) of Al(400 nm)/Cu(300 nm)Ni(400 nm)/Au(20 nm) subsequently. The compositions of the bump were Sn-Cu and eutectic Sn-Pb, and characteristics of two bumps were compared. Experimental results showed that the electroplated thickness of the solders were increased with time, and the increasing rates were TEX>$0.45 <\mu\textrm{m}$/min for the Sn-Cu and $ 0.35\mu\textrm{m}$/min for the Sn-Pb. In the case of Sn-Cu, electroplating rate increased from 0.25 to $2.7\mu\textrm{m}$/min with increasing current density from 1 to 8.5 $A/dm^2$. In the case of Sn-Pb the rate increased until the current density became $4 A/dm^2$, and after that current density the rate maintains constant value of $0.62\mu\textrm{m}$/min. The electro plated bumps were air reflowed to form spherical bumps, and their bonded shear strengths were evaluated. The shear strength reached at the reflow time of 10 sec, and the strength was of 113 gf for Sn-Cu and 120 gf for Sn-Pb.

• Journal of Electrochemical Science and Technology
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• v.10 no.3
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• pp.329-334
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• 2019

Sn-Cu alloy powders were prepared via a simple chemical reduction method for the negative electrode materials in lithiumion batteries. The addition of Cu can suppress the growth of Sn particles during synthetic process. Furthermore, the Cu also acts as a matrix phase against the volume change during cycling. With increasing amount of the Cu, a stable $Cu_6Sn_5$ phase formed in the Sn-Cu alloy and its cycle performance greatly enhanced depending on the Cu content. To promote the generation of the $Cu_6Sn_5$ phase, the synthesis temperature is raised to $60-100^{\circ}C$ from the ambient temperature. The Sn-Cu alloy powders prepared at elevated temperatures showed remarkable cycle performances. The Sn-Cu alloy powder obtained at $60^{\circ}C$ exhibited a significantly high volumetric capacity of over 2,000 mAh/cc at the 50th cycle.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.31-39
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• 2008

To develop the MEMS cap bonding process without cavity formation, we electroplated Cu/Sn rim structures and measured the bonding characteristics for the Cu/Sn rims of $25{\sim}400{\mu}m$ width. As the effective device-mounting area ratio decreased and the failure strength ratio increased for wider Cu/Sn rim, these two properties were estimated to be optimized for the Cu/Sn rim with 150 ${\mu}m$ width. Complete bonding was accomplished at the whole interfaces of the Cu/Sn packages with the rim widths of 25 ${\mu}m$ and 50 ${\mu}m$. However, voids were observed locally at the interfaces with the rim widths larger than 100 ${\mu}m$. Such voids were formed by local non-contact between the upper and lower rims due to the surface roughness of the electroplated Sn.