• Title/Summary/Keyword: Cu-sheet

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Thermal Stability of Ti-Si-N as a Diffusion Barrier (Cu와 Si간의 확산방지막으로서의 Ti-Si-N에 관한 연구)

  • O, Jun-Hwan;Lee, Jong-Mu
    • Korean Journal of Materials Research
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    • v.11 no.3
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    • pp.215-220
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    • 2001
  • Amorphous Ti-Si-N films of approximately 200 and 650 thickness were reactively sputtered on Si wafers using a dc magnetron sputtering system at various $N_2$/Ar flow ratios. Their barrier properties between Cu (750 ) and Si were investigated by using sheet resistance measurements, XRD, SEM, RBS, and AES depth profiling focused on the effect of the nitrogen content in Ti-Si-N thin film on the Ti-Si-N barrier properties. As the nitrogen content increases, first the failure temperature tends to increase up to 46 % and then decrease. Barrier failure seems to occur by the diffusion of Cu into the Si substrate to form Cu$_3$Si, since no other X- ray diffraction intensity peak (for example, that for titanium silicide) than Cu and Cu$_3$Si Peaks appears up to 80$0^{\circ}C$. The optimal composition of Ti-Si-N in this study is $Ti_{29}$Si$_{25}$N$_{46}$. The failure temperatures of the $Ti_{29}$Si$_{25}$N$_{465}$ barrier layers 200 and 650 thick are 650 and $700^{\circ}C$, respectively.ely.

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Evaluation of the Weldability of Cu Sheet through the Ultrasonic Metal Welding Experiment (Cu박판의 초음파 금속 용착 실험을 통한 용착성 평가)

  • Park, Woo-Yeol;Jang, Ho-Su;Kim, Jung-Ho;Park, Dong-Sam
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.21 no.4
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    • pp.613-618
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    • 2012
  • The Ultrasonic metal welding is used in the solid-phase welding method at room temperature or low temperature state. In welding process, the high frequency vibration energy is delivered to the welding part under the constant pressure for welding. In this study, we aimed to design and manufacture a 40,000 Hz band horn through finite element analysis. By performing modal analysis and harmonic response analysis, the modal analysis result is that the horn frequency was 39,599Hz and the harmonic response result that the horn frequency was 39,533Hz. These results were similar. In order to observe the designed horn's performance, about 4,000 voltage data was obtained from a light sensor and was analyzed by FFT analysis using Origin Tool. The result RMS amplitude was approximately $8.5{\mu}m$ at 40,000Hz, and maximum amplitude was $12.3{\mu}m$. Using this manufactured horn along with an ultrasonic metal welder and tension tester, the weldability of Cu sheets was evaluated. The maximum tensile force was 66.53 N in the welding condition of 2.0 bar pressure, 60% amplitude, and 0.32 s welding time. In excessive welding conditions, it was revealed that weldability is influenced negatively.

Synthesis and Characterization of Layer-Patterned Graphene on Ni/Cu Substrate

  • Jung, Daesung;Song, Wooseok;Lee, Seung Youb;Kim, Yooseok;Cha, Myoung-Jun;Cho, Jumi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.618-618
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    • 2013
  • Graphene is only one atom thick planar sheet of sp2-bonded carbon atoms arranged in a honeycomb crystal lattice, which has flexible and transparent characteristics with extremely high mobility. These noteworthy properties of graphene have given various applicable opportunities as electrode and/or channel for various flexible devices via suitable physical and chemical modifications. In this work, for the development of all-graphene devices, we performed to synthesize alternately patterned structure of mono- and multi-layer graphene by using the patterned Ni film on Cu foil, having much different carbon solid solubilities. Depending on the process temperature, Ni film thickness, introducing occasion of methane and gas ratio of CH4/H2, the thickness and width of the multi-layer graphene were considerably changed, while the formation of monolayer graphene on just Cu foil was not seriously influenced. Based on the alternately patterned structure of mono- and multi-layer graphene as a channel and electrode, respectively, the flexible TFT (thin film transistor) on SiO2/Si substrate was fabricated by simple transfer and O2 plasma etching process, and the I-V characteristics were measured. As comparing the change of resistance for bending radius and the stability for a various number of repeated bending, we could confirm that multi-layer graphene electrode is better than Au/Ti electrode for flexible applications.

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A Study on Development of Laser Welding System for Bellows Outside Ege Using Vision Sensor (시각센서를 이용한 벨로우즈 외부 모서리 레이저 용접 시스템의 개발에 관한 연구)

  • 이승기;유중돈;나석주
    • Journal of Welding and Joining
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    • v.17 no.3
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    • pp.71-78
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    • 1999
  • The welded metal bellows is commonly manufactured by welding pairs of washer-shaped discs of thin sheet metal stamped from strip stock in thickness from 0.025 to 0.254 mm. The discs, or diaphragms, are formed with mating circumferential corrugations. In this study, the diaphragms were welded by using a CW Nd: YAG laser to form metal bellows. The bellows was fixed on a jig and compressed axially, while Cu-rings were installed between belows edges for intimate contact of edges. The difference between the inner diameter of bellows and jig shaft causes an eccentricity, while the tolerance between motor shaft and jig shaft causes a wobble type motion. A vision sensor which is based on the optical triangulation was used for seam tracking. An image processing algorithm which can distinguish the image by bellows edge from that by Cu-ring was developed. The geometric relationship which describes the eccentricity and wobble type motion was modeled. The seam tracking using the image processing algorithm and the geometric modeling was performed successfully.

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Effect of Moisture on Cu(In,Ga)Se2 Solar Cell with (Ga,Al) Co-doped ZnO as Window Layer ((Ga,Al)이 도핑된 ZnO를 투명전극으로 가진 Cu(In,Ga)Se2 태양전지에 수분이 미치는 영향)

  • Yang, So Hyun;Bae, Jin A;Song, Yu Jin;Jeon, Chan Wook
    • Current Photovoltaic Research
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    • v.5 no.4
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    • pp.135-139
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    • 2017
  • We fabricated two different transparent conducting oxide thin films of ZnO doped with Ga ($Ga_2O_3$ 0.9 wt%) as well as Al ($Al_2O_3$ 2.1 wt%) (GAZO) and ZnO doped only with Al ($Al_2O_3$ 3 wt%) (AZO). It was investigated how it affects the moisture resistance of the transparent electrode. In addition, $Cu(In,Ga)Se_2$ thin film solar cells with two transparent oxides as front electrodes were fabricated, and the correlation between humidity resistance of transparent electrodes and device performance of solar cells was examined. When both transparent electrodes were exposed to high temperature distilled water, they showed a rapid increase in sheet resistance and a decrease in the fill factor of the solar cell. However, AZO showed a drastic decrease in efficiency at the beginning of exposure, while GAZO showed that the deterioration of efficiency occurred over a long period of time and that the long term moisture resistance of GAZO was better.

Electrical and Optical Characteristics of AC P-ELD using ZnS:Cu,Cl (ZnS:Cu,Cl 형광체를 사용한 powder형 AC Electroluminescence의 전기적 광학적 특성)

  • 임민수;권순석;신유섭;윤성현;정득영;임기조;류부형
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.271-274
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    • 1999
  • In this paper, we studied the matrix type Powder AC Electroluminescence using ZnS:Cu,Cl Phosphor. Previously, Powder AC EL was used in Backlighting of LCD. Rescently, organic Thin Film EL was rapidly developed because of high Luminescence and low applied voltage. But Powder AC EL has Superior features that include sheet like flexibility thickness, low weight, self-emission, a wide viewing angle and a fast response time. We tried to change of phosphor thickness and binder mixture rate in order to obtain the good condition of powder AC EL and we obtained the very low breakdown voltage that was just 15V. Till now, we measured the current-voltage(V-I), luminance-voltage(V-L), Luminance-current (L-I), color coordinate (CIE), and phosphor Intensity of variable thickness. In experiment result, the devices has the luminance of 840 cd/$m^2$ and improved color coordinate, x=0.1557, y=0.2145, using a 10kHz drive frequency.

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Microstructure and Mechanical Properties of a Cu-Fe-P Copper Alloy Sheet Processed by Differential Speed Rolling (이주속압연된 Cu-Fe-P 동합금 판재의 조직 및 기계적 성질)

  • Lee, Seong-Hee;Lim, Jung-Youn;Utsunomiya, Hiroshi;Euh, Kwangjun;Han, Seung-Zeon
    • Korean Journal of Metals and Materials
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    • v.48 no.10
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    • pp.942-950
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    • 2010
  • The microstructure and mechanical properties of a Cu-Fe-P copper alloy processed by differential speed rolling (DSR) were investigated in detail. The copper alloy, with a thickness of 3 mm, was rolled to 50% reduction at ambient temperature without lubrication with a differential speed ratio of 2.0:1 and then annealed for 0.5h at various temperatures ranging from 100 to $800^{\circ}C$. Conventional rolling was performed under the same rolling conditions for comparison. The shear strain introduced by the conventional rolling process showed positive values at the positions of the upper roll side and negative values at the positions of the lower roll side. However, the result was zero or positive values at all positions for samples rolled by DSR. The effects of DSR on the microstructure and mechanical properties of the as-rolled and subsequently annealed samples are discussed.

The Effects of Electrolyte Compositions on the Property of Copper Electrodeposited Layer (구리전착층의 물성에 미치는 전해액 조성의 영향)

  • Park, Eun-Kwang;Lee, Man-Hyung;Woo, Tae-Gyu;Park, Il-Song;Jung, Kwang-Hee;Seol, Kyeong-Won
    • Korean Journal of Metals and Materials
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    • v.47 no.11
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    • pp.740-747
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    • 2009
  • The purpose of this study is to identify the effect of electrolyte compositions on electrodeposited copper foil. First of all, the polyimide substrate was pretreated with plasma. Finally, copper foil was deposited on a Cu/Ni/Polyimide substrate using the electroplating technique. As the quantity of Cu increased, preferred orientations changed into (111). Increasing sulfuric acid, on the other hand, brought down the preferred orientation of (111). The lowest sheet resistance, surface roughness, and fine adhesion were detected when the ratio of $Cu^{2+}$ and $H_2SO_4$ is 50:50(g/l).

Improvement of R-value in Al-Mg-Si-Cu Alloy Sheets by Cross Rolling (크로스 압연에 의한 Al-Mg-Si-Cu 합금 판재의 소성변형비의 향상)

  • Lee, Kwang-jin;Jeon, Jae-yeol;Woo, Kee-do
    • Korean Journal of Metals and Materials
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    • v.49 no.6
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    • pp.488-492
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    • 2011
  • Heat-treatable Al-Mg-Si-Cu alloy sheets, which are expected to have a growing demand, were fabricated by Cross rolling to improve their formability. The mechanical properties and texture of the sheets after the final annealing process were investigated by a tensile test, EBSD and XRD analysis. The grain size of the cross-rolled sheets was remarkably decreased compared to conventional rolled sheets, and the R-value of the cross-rolled sheets was notably increased by about one and a half times that of the conventional rolled sheet. Cube{001}<100> and cubic system orientations were strongly developed in conventional rolled sheets. However, randomized textures were formed in the cross-rolled sheets without specific texture. It is thought that much shear deformation was induced during the cross rolling. The results show that the cross rolling method is effective for improving the R-value of aluminum alloys sheets and their grain refinement. As a result, it is considered that cross rolling is effective for improving formability.

MO-COMPOUNDS AS A DIFFUSION BARRIER BETWEEN Cu AND Si

  • Kim, Ji-Hyung;Lee, Yong-Hyuk;Kwon, Yong-Sung;Yeom, Geun-Young;Song, Jong-Han
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.683-690
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    • 1996
  • In this study, the diffusion barrier properties of $1000 \AA$ thick molybdenum compounds (Mo, Mo-N, $MoSi_2$, Mo-Si-N) were investigated using sheet resistance measurements, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM), and Rutherford backscattering spectrometry (RBS). Each barrier material was deposited by the dc magnetron sputtering, and annealed at 300-$800^{\circ}C$ for 30min in vacuum. Mo and $MoSi_2$ barrier were failed at low temperature due to Cu diffusion through grain bound-aries and defects of Mo thin film and the reaction of Cu with Si within $MoSi_2$ respectively. A failure temperature could be raised to $650^{\circ}C$-30min in the Mo barrier system and to $700^{\circ}C$-30min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the N, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It was found that Mo-Si-N is more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetration preventing Cu reaction with the substrate for 30min at a temperature higher than $650^{\circ}C$.

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