• Archives of Pharmacal Research
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• v.2 no.2
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• pp.99-110
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• 1979

The crystal structure of sulfapyridine, $C_{11}H_{11}N_{3}O_{2}S$, has been determined by X-ray diffraction method. The compound crystallizees in the monoclinic space group C2/c with a = 12, 80(4), b= 11.72(4), $c= 15.36(5){\AA}, {\beta}= 94(3)^{\circ}$and Z = 8. A total of 1133 observed reflections were collected by the Weissenberg method with CuKaradiation. Structure was solved by the heavy atom method and refined by isostropic block-diagonal least-squares method to the R value of 0.14. The nitrogen in the pyridine ring of sulfapyridine is associated with an extra-annular hydrogen. The C (benzene ring) S-N-C (pyridine ring) group adopts the gauche form with a fonformational angle of $71^{\circ}$. The benzene ring are inclined at angle of $84^{\circ}.to the pyridine ring plane. Sulfapyridine shows three different hydrogen bonding in the crystal. They are two N-H...O hydrogen bonds with the distance of 2.90 and 2.98${\AA}$ respectively, and on N-H...N with the distance of 3.06 ${\AA}$.

• Journal of the Korean Society for Nondestructive Testing
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• v.16 no.4
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• pp.241-250
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• 1997

The velocity dispersion of surface acoustical wave(SAW) of Si layer/mesh Au/Si substrate was measured by the frequency analysis technique of backward radiation at liquid/solid interface. The difference of backward radiation patterns depending on used transducers (2, 5, 10MHz) confirmed that the backward radiation phenomenon was caused by the energy radiation from SAW generated in surface region. An ultrasonic goniometer was constructed to measure continuously the angular dependence of backscattered intensity. The angular dependences of backward radiation(5MHz) were measured for Ni layer/Al substrate specimens that were bonded by epoxy involving different content of Cu powder. It was known that the width and pattern of backward radiation had informations such as the velocity dispersion, bonding quality and structure of surface region.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.74-79
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• 2000

In an attempt to estimate the wetting properties of wettable metal layers by wetting balance method, an analysis of wetting curves of the coating layer was performed. Based on the analysis, wetting properties of UBM-coated Si-plate were estimated by the new wettability indices. The wetting curves of the one and both sides-coated UBM layers have the similar shape and show the similar tendency to the temperature. So the wetting property estimation of one side coating is possible with wetting balance method. For UBM of Si-chip, Cr/Cu/Au UBM is better than Ti/Ni/Au in the point of wetting time. At general reflow temperature, the wettability of high melting point solders(Sn-Sb, Sn-Ag) is better than that of few melting point ones(Sn-Bi, Sn-In).The contact angle of the one side coated plate to the solder can be calculated from the farce balance equation by measuring the static state force and the tilt angle.

• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.60-64
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• 2005

The ICP-CVD (inductively coupled plasma chemical vapor deposition) process was applied to the deposition of $TiB_2$ films. For plasma generation, 13.56 MHz r.f. power was supplied to 2-turn Cu coil placed inside chamber. And the gas mixture of $TiCl_4,\;BCl_3,\;H_2$ and Ar was used for $TiB_2$ deposition. $TiB_2$ films with high hardness (<40 GPa) were obtained at extremely low deposition temperature $(250^{\circ}C)$, and the films hardness increased with ICP power and gas flow ratio of $TiCl_4/BCl_3$. The film structure was changed from (100) preferred orientation to random orientation with increasing RF power. It is supposed that the enhanced hardness of films was caused by a strong Ti-B chemical bonding of stoichiometric $TiB_2$ films and film densification induced by high density plasma.

• Korean Journal of Crystallography
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• v.11 no.2
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• pp.75-79
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• 2000

The complex [Cu(L)(H2O)2] (PDC)(1)(L=2,5,9,12-tetramethyl-1,4,8,11- tetraazacyclotetradecane;PDC=1,4-pyridinedicarboxylate) has been synthesized and characterized by X-ray crys-tallography. The compound 1 crystallizes in the triclinic space group P1, with a=7.553(1)Å, b=9.619(2)Å, c=10.692(2)Å, α=74.22(1)°, β=73.32(1)°, γ=78.70(1)°, V=710.1(2)Å3, Z=1,R1(wR2) for 2634 observed reflections of [I>2σ(I)] was 0.0854(0.2242). The compound 1 is interconnected to give a three-dimensional network through weak hydrogen-bonding interactions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.308-312
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• 2003

The packaging of the integrated circuits requires knowledge of ceramics and metals to accommodate the fabrication of modules that are used to construct subsystems and entire systems from extremely small components. Composite ceramics ($Al_2O_3-SiO_2$) were tested for substrates. A stress analysis was conducted for a linear work-hardening metal cylinder embedded in an infinite ceramic matrix. The bond between the metal and ceramic was established at high temperature and stresses developed during cooling to room temperature. The calculations showed that the stresses depend on the mismatch in thermal expansion, the elastic properties, and the yield strength and work hardening rate of the metal. Experimental measurements of the surface stresses have also been made on a $Cu/Al_2O_3-SiO_2$ ceramic system, using an indentation technique. A comparison revealed that the calculated stresses were appreciably larger than the measured surface stresses, indicating an important difference between the bulk and surface residual stresses. However, it was also shown that porosity in the metal could plastically expand and permit substantial dilatational relaxation of the residual stresses. Conversely it was noted that pore clusters were capable of initiating ductile rupture, by means of a plastic instability, in the presence of appreciable tri-axiality. The role of ceramics for packaging of microelectronics will continue to be extremely challenging.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.85-85
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• 2010

Graphene, the building block of graphite, is one of the most promising materials due to their fascinating electronic transport properties. The pseudo-two-dimensional sp2 bonding in graphene layers yields one of the most effective solid lubricants. In this poster, we present the correlation between electrical and nanomechanical properties of graphene layer grown on Cu/Ni substrate with CVD (Chemical Vapor Deposition) method. The electrical (current and conductance) and nanomechanical (adhesion and friction) properties have been investigated by the combined apparatus of friction force microscopy/conductive probe atomic force microscopy (AFM). The experiment was carried out in a RHK AFM operating in ultrahigh vacuum using cantilevers with a conductive TiN coating. The current was measured as a function of the applied load between the AFM tip and the graphene layer. The contact area has been obtained with the continuum mechanical models. We will discuss the influence of mechanical deformation on the electrical transport mechanism on graphene layers.

• Korean Journal of Metals and Materials
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• v.47 no.4
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• pp.261-266
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• 2009

The mechanical and electrical properties of ball grid array (BGA) solder joints were measured, consisting of Sn-3.5Ag, with organic solderability preservative (OSP)-finished Cu pads and Electroless Nickel/Immersion Gold (ENIG) surface finishes. The mechanical properties were measured by die shear test. When ENIG PCB was upper joint and OSP PCB was lower joint, the highest shear force showed at the third reflow. When OSP PCB was upper joint and ENIG PCB was lower joint, the highest shear force showed at the forth reflow. For both joints, after the die shear results reached the highest shear force, shear force decreased as a function of increasing reflow number. Electrical property of the solder joint decreased with the function of increasing reflow number. The scanning electron microscope results show that the IMC thickness at the bonding interface gets thicker while the number of reflow increases.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.61-68
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• 2023

In this study, Sn-3.5Ag-15.0Fe composite solder was manufactured and applied to TLP bonding to change the entire joint into a Sn-Fe IMC(intermetallic compound), thereby applying it as a high-temperature solder. The FeSn₂ IMC formed during the bonding process has a high melting point of 513℃, so it can be stably applied to power modules for power semiconductors where the temperature rises up to 280℃ during use. As a result of applying ENIG surface treatment to both the chip and substrate, a multi-layer IMC structure of Ni₃Sn₄/FeSn₂/Ni₃Sn₄ was formed at the joint. During the shear test, the fracture path showed that cracks developed at the Ni₃Sn₄/FeSn₂ interface and then propagated into FeSn₂. After 2hours of the TLP joining process, a shear strength of over 30 MPa was obtained, and in particular, there was no decrease in strength at all even in a shear test at 200℃. The results of this study can be expected to lead to materials and processes that can be applied to power modules for electric vehicles, which are being actively researched recently.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.2
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• pp.79-84
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• 2016

A flexible electronic device deformed by external force causes the failure of a semiconductor die. Even without failure, the repeated elastic deformation changes carrier mobility in the channel and increases resistivity in the interconnection, which causes malfunction of the integrated circuits. Therefore it is desirable that a semiconductor die be placed on a neutral line where the mechanical stress is zero. In the present study, we investigated the effects of design factors on the position of neutral line by finite element analysis (FEA), and expected the possible failure behavior in a flexible face-down packaging system assuming flip-chip bonding of a silicon die. The thickness and material of the flexible substrate and the thickness of a silicon die were considered as design factors. The thickness of a flexible substrate was the most important factor for controlling the position of the neutral line. A three-dimensional FEA result showed that the von Mises stress higher than yield stress would be applied to copper bumps between a silicon die and a flexible substrate. Finally, we suggested a designing strategy for reducing the stress of a silicon die and copper bumps of a flexible face-down packaging system.