• Applied Chemistry for Engineering
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• v.20 no.5
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• pp.553-556
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• 2009

This research aims at the recovery of valuable resource and more efficient waste treatment through solving the problem of pyrolysis technique. At first, in order to raise the economical efficiency, the low temperature pyrolysis experiment was carried out at the temperature of $450^{\circ}C$, which is lower than the common pyrolysis temperature area ($500{\sim}1000^{\circ}C$). We could lower the reaction temperature and reduce the reaction time by using catalyst. Also we used indirect heat for the purpose of maintaining favorable anoxic condition. As a result, we could raise the recovery rate of the valuable copper and synthetic fuel oil. Furthermore, the by-products and flue gas could be treated more effectively as well. The flue gas passed through two stage neutralization tank, so that dioxin hardly occurs and other environment items are controlled fairly well to the environmental standard. Throughout this study, we produced the low temperature pyrolysis equipment (GTPK-001) as mentioned above, and we found out that the technique can be commercialized economically as well as environmentally friendly.

• Carbon letters
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• v.21
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• pp.68-73
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• 2017

We have demonstrated the production of thin films containing multilayer graphene-coated copper nanoparticles (MGCNs) by a commercial electrodeposition method. The MGCNs were produced by electrical wire explosion, an easily applied technique for creating hybrid metal nanoparticles. The nanoparticles had average diameters of 10-120 nm and quasi-spherical morphologies. We made a complex-electrodeposited copper thin film (CETF) with a thickness of $4.8{\mu}m$ by adding 300 ppm MGCNs to the electrolyte solution and performing electrodeposition. We measured the electric properties and performed corrosion testing of the CETF. Raman spectroscopy was used to measure the bonding characteristics and estimate the number of layers in the graphene films. The resistivity of the bare-electrodeposited copper thin film (BETF) was $2.092{\times}10^{-6}{\Omega}{\cdot}cm$, and the resistivity of the CETF after the addition of 300 ppm MGCNs was decreased by 2% to ${\sim}2.049{\times}10^{-6}{\Omega}{\cdot}cm$. The corrosion resistance of the BETF was $9.306{\Omega}$, while that of the CETF was increased to 20.04 Ω. Therefore, the CETF with MGCNs can be used in interconnection circuits for printed circuit boards or semiconductor devices on the basis of its low resistivity and high corrosion resistance.

• Journal of Electrochemical Science and Technology
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• v.12 no.1
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• pp.58-66
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• 2021

Spiral-wound woven wire meshes packed bed rotating cylinder electrode was used for the simultaneous removal of cadmium (Cd) and copper (Cu) from a binary solution. The effects of weight percent of each metal on the removal and current efficiencies were studied at an operating current of 345A, while the effect of current on the removal efficiency of both metals was investigated at three levels of current (240, 345.and 400 mA). The experiments were carried out at constant rotation speed 800 rpm, pH = 3, and a total concentration of metals (500 ppm). The results showed that the removal efficiency of copper increased from 89% to 99.4% as its weight percent increased from 20% to100%. In a similar fashion, the removal efficiency of cadmium increased from 81% to 97% as its weight percent increased from 20% to100%. The results confirmed that the removal efficiency of any metals declined in the presence of the other. Increasing of current resulted in increasing the removal efficiency of both metals at different weight percents. The results confirmed that current efficiencies for removing of copper and cadmium simultaneously decline with increasing of electrolysis time and weight percent of cadmium or with decreasing the weight percent of copper. Current efficiency was higher at the initial stage of electrolysis for all weight percents of metals. The results showed that the decay of copper concentration was exponential at all weight percents of copper, confirming that the electrodeposition of copper is under mass transfer control in the presence of cadmium. While the decay of cadmium concentration was linear at lower weight percent of cadmium then changed to an exponential behavior at high weight percent of cadmium in the presence of copper.

• The Korean Journal of Nuclear Medicine
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• v.34 no.4
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• pp.336-343
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• 2000

Purpose: Thallous-201 chloride produced at Korea Cancer Center Hospital(KCCH) is used in detecting cardiovascular disease and cancer. Thallium impurity can cause emesis, catharsis and nausea, so the presence of thallium and other metal impurities should be determined. According to USP and KP, their amounts must be less than 2 ppm in thallium and 5 ppm in total. In this study, the detection method of trace amounts of metal impurities in $[^{201}Tl]$TICI injection with polarography was optimized without environmental contamination. Materials and Methods: For the detection of metal impurities, Osteryoung Square Wave Stripping Voltammetry method was used in Bio-Analytical System (BAS) 50W polarograph. The voltammetry was composed of Dropping Mercury Electrode (DME) as a working electrode, Ag/AgCl as a reference electrode and Pt wire as a counter electrode. Square wave stripping method, which makes use of formation and deformation of amalgam, was adopted to determine the metal impurities, and pH 7 phosphate buffer was used as supporting electrolyte. Results: Tl, Cu and Pb in thallous-201 chloride solution were detected by scanning from 300 mV to -800 mV Calibration curves were made by using $TINO_3,\;CuSO_4\;and\;Pb(NO_3){_2}$ as standard solutions. Tl was confirmed at -450 mV peak potential and Cu at -50 mV Less than 2 ppm of Tl and Cu was detected and Pb was not detected in KCCH-produced thallous-201 chloride injection. Conclusion: Detection limit of thallium and copper is approximately 50 ppb with this method. As a result of this experiment, thallium and other metal impurities in thallous-201 chloride injection, produced at Korea Cancer Center Hospital, are in the regulation of USP and KP Polarograph could be applied for the determination of metal impurities in the quality control of radiopharmaceuticals conveniently without environmental contamination.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.5
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• pp.283-288
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• 2000

In this work, small-size, high-performance simple solenoid-type RF chip inductors utilizing an Al2O3 core material were investigated. Copper (Cu) wire with $40\mum$ diameter was used as the coils and the size of the chip inductor fabricated in this work was $2.1mm\times1.5mm\times1.0mm$. The external current source was applied after bonding Cu coil leads to gold pads electro-plated on each end of backsides of a core material. High frequency characteristics of the inductance (L), quality factor (Q), and impedance (Z) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). This HP4291B was also used to obtain the equivalent circuit and its circuit parameters of the chip inductors. This HP4291B was also used to obtain the equivalent circuit and its circuit parameters of the chip inductors. The developed inductors have the self-resonant frequency (SRF) of 1.1 to 3.1 GHz and exhibit L of 22 to 150 nH. The L of the inductors decreases with increasing the SRF. The Z of the inductors has the maximum value at the SRF and the inductors have the quality factor of 70 to 97 in the frequency range of 500 MHz to 1.5 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.10
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• pp.17-23
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• 2003

In this study, microscale, high-performance, solenoid-type RF chip inductors were investigated. The size of the RF chip inductors fabricated in this work was 1.0${\times}$0.5${\times}$0.5㎣. The materials (96% Al2O3) and shape (I-type) of the core were determined by a Maxwell three-dimensional field simulator to maximize the performance of the inductors. The copper (Cu) wire with 40${\mu}{\textrm}{m}$ diameter was used as the coils. High frequency characteristics of the inductance (L), quality-factor (Q), and capacitance (C) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The inductors developed have inductances of 11 to 39 nH and quality factors of 28 to 50 over the frequency ranges of 250MHz to 1 GHz, and show results comparable to those measured for the inductors prepared by CoilCraf $t^{Tm}$ that is one of the best chip inductor company in the world. The simulated data predicted the high-frequency data of the L, Q, and C of the inductors developed well.l.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.17 no.4
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• pp.76-82
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• 2018

3D formed Electrical Discharge Machining (EDM) and hole EDM were conducted for die and mold manufacturing with electrodes which were made by mechanical machining and wire EDM. It is difficult to machine the hardened material after heat treatment and quenching with traditional machining. The only method of machining hardened material is die-sinking EDM. In this research, hole EDM was conducted for heat-treated cold-worked tool steel (SKD11) for use as a die material. The EDM surfaces were analyzed by pulse-on time and peak current of EDM current, according to the machining conditions of EDM. The EDM surface profiles were affected by the peak current. The contribution of each factor is peak current (91.63%) and pulse-on time (0.93%). The best surface roughness was obtained with a $130{\mu}s$ pulse-on time and a 14.2 A peak current. With uniform EDM processing, the surface deteriorated with increasing pulse-on time and peak current. The thickness of the solidified layer induced by EDM was increased as the peak current, crater shapes, and erupted shapes of EDM surfaces were increased. Therefore, microcracking gaps induced by surface tension were increased.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.3
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• pp.454-459
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• 2007

In this work, micro-scale, high-performance solenoid-type RF chip inductors utilizing amorphous $Al_2O_3$ core material were investigated. The size of the chip inductors was $0.86{\times}0.46{\times}0.45mm^3$ and copper(Cu) wire with $27{\mu}m$ diameter was used as the coil. High frequency characteristics of the inductance(L), quality factor(Q), impedance(Z), and equivalent circuit parameters of the RE chip inductors were measured and analyzed using an RF impedance/material analyzer(HP4291B with HP16193A test fixture). It was observed that the RF chip inductors with the number of turns of 9 to 12 have the inductance of 21 to 34nH and exhibit the self-resonant frequency(SRF) of 5.7 to 3.7GHz. The SRF of inductors decreases with increasing the inductance and inductors have the quality factor of 38 to 49 in the frequency range of 900MHz to 1,7GHz.

• ETRI Journal
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• v.25 no.2
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• pp.65-72
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• 2003

To achieve cost and size reductions, we developed a low cost manufacturing technology for RF substrates and a high performance passive process technology for RF integrated passive devices (IPDs). The fabricated substrate is a conventional 6" Si wafer with a 25${\mu}m$ thick $SiO_2$ surface. This substrate showed a very good insertion loss of 0.03 dB/mm at 4 GHz, including the conductive metal loss, with a 50 ${\Omega}$ coplanar transmission line (W=50${\mu}m$, G=20${\mu}m$). Using benzo cyclo butene (BCB) interlayers and a 10 ${\mu}m$ Cu plating process, we made high Q rectangular and circular spiral inductors on Si that had record maximum quality factors of more than 100. The fabricated inductor library showed a maximum quality factor range of 30-120, depending on geometrical parameters and inductance values of 0.35-35 nH. We also fabricated small RF IPDs on a thick oxide Si substrate for use in handheld phone applications, such as antenna switch modules or front end modules, and high-speed wireless LAN applications. The chip sizes of the wafer-level-packaged RF IPDs and wire-bondable RF IPDs were 1.0-1.5$mm^2$ and 0.8-1.0$mm^2$, respectively. They showed very good insertion loss and RF performances. These substrate and passive process technologies will be widely utilized in hand-held RF modules and systems requiring low cost solutions and strict volumetric efficiencies.

• Journal of Welding and Joining
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• v.33 no.2
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• pp.23-31
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• 2015

Stainless steel is used in automobile muffler and exhaust systems. However, in comparison with other steels it has a high thermal expansion rate and low thermal conductivity, and undergoes excessive thermal deformation after welding. To address this problem, we evaluated the use of arc brazing in place of welding for the processing of an exhaust system, and investigated the parameters that affect the joint characteristics. Muffler parts STS439 and hot-dipped Al coated steel were used as test specimens, and CuAl brazing wire was used as the filler metal for the cold metal transfer (CMT) welding machine, which is a low heat input arc welder. In addition, a Box-Behnken design of experiment was used, which is a response surface methodology. The main process parameters (current, speed, and torch angle) were used to determine the appropriate welding quality and the mechanical properties of the brazing part was evaluated at the optimal welding condition. The optimal processing condition for arc brazing was 135A current, 51cm/min speed and $74^{\circ}$ torch angle. The process was applied to an actual exhaust system muffler and the prototype was validated by thermal fatigue, thermal shock, and endurance limit tests.