• Journal of Korea Foundry Society
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• v.17 no.5
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• pp.480-487
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• 1997

Particle reinforced metal matrix composites(MMCs) via a centrifugal spray-cast deposition(CSD) process were fabricated by injecting second phase particles($Al_2O_3$<40${\mu}m$, W<17.3${\mu}m$) into copper melt on the atomizing disc. Compositing modes were investigated by combining microstructures and mathematical modeling between Cu droplets and the reinforced particles injected. The $Cu/W_P$ powders were shown that the W particles penetrate and get embedded in the Cu droplets. It is considered that the W particles composite preferentially in Cu melt on the atomizing disc. On the other hand, the $Al_2O_3$, particles did not penetrate into the Cu droplets on the atomizing disc but get attached in surface of Cu droplets during the flight. It is considered that the compositing may be attained in the flight distance which the relative velocity between Cu droplet and $Al_2O_3$, particle is maximum. The microstructure of the $Cu/W_P$ and the $Cu/(Al_2O_3)_p$ composite preform was strongly influenced by compositing modes of droplets, and after subsequent deposition it was comprised as it is called the dispersed type and the cell type of microstructure, respectively.

• Journal of Electrochemical Science and Technology
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• v.11 no.4
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• pp.399-405
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• 2020

Hollow copper oxide/multi-walled carbon nanotubes (CuO/MWCNT) composites were fabricated via an optimized infiltration-reduction-oxidation method, which is more facile and easy to control. The crystalline structure and morphology were characterized by X-ray diffraction (XRD), and transmission electron microscopy (TEM). The as-prepared CuO/MWCNT composites deliver an initial capacity of 612.3 mAh·g^-1 and with 80% capacity retention (488.2 mAh·g^-1) after 100 cycles at a current rate of 0.2 A·g^-1. The enhanced electrochemical performance is ascribed to the better electrical conductivity of MWCNT, the hollow structure of CuO particles, and the flexible structure of the CuO/MWCNT composites.

• Korean Journal of Materials Research
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• v.26 no.1
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• pp.17-21
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• 2016

Pt@Cu/C core-shell catalysts were successfully prepared by impregnation of a carbon support with copper precursor, followed by transmetallation between platinum and copper. The Pt@Cu/C core-shell catalysts retained a core of copper with a platinum surface. The prepared catalysts were used for hydrogen production through catalytic dehydrogenation of decalin for eventual application to an onboard hydrogen supply system. Pt@Cu/C core-shell catalysts were more efficient at producing hydrogen via decalin dehydrogenation than Pt/C catalysts containing the same amount of platinum. Supported core-shell catalysts utilized platinum highly efficiently, and accordingly, are lower-cost than existing platinum catalysts. The combination of impregnation and transmetallation is a promising approach for preparation of Pt@Cu/C core-shell catalysts.

• Journal of the Korean Ceramic Society
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• v.25 no.2
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• pp.154-160
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• 1988

Almost single phase of Y1Ba2Cu3Ox, which exhibits the onset of superconducting transition at 90K, has been prepared via a conventional ceramic processing route followed by an anneal for a period of 10 hours at 45$0^{\circ}C$ in an atmosphere of 100% O2. The mean value for the oxygen content has been determined as x=6.85$\pm$0.02 by an iodometric titration technique. X-ray photoemission spectra are found to be consistent with a mixture of the d8(Cu3+) and d9(Cu2+) as the ground state and reveals that the local concentration of Cu3+ decreases with depth from the surface where x corresponds to 7.0. This is explained as being associated with the intercalation of oxygen during cooling from the annealing temperature.

• Bulletin of the Korean Chemical Society
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• v.30 no.12
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• pp.2943-2948
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• 2009

Copper-dimethylglyoxime complex (CuDMG) modified Copper electrode (Cu/CuDMG) showed a catalytic activity towards cyclohexanol oxidation in NaOH solution. The modified electrode prepared by the dimethylglyoxime anodic deposition on Cu electrode in the solution contained 0.20 M $NH_4Cl\;+\;NH_4OH\;(pH\;9.50)\;and\;1\;{\times}\;10^{-4}$ M dimethylglyoxime. The modified electrode conditioned by potential recycling in a potential range of -900${\sim}$900 mV vs. Ag/AgCl by cyclic voltammetry in alkaline medium (1 M NaOH). The results show that the CuDMG film on the electrode behaves as an efficient catalyst for the electro-oxidation of cyclohexanol in alkaline medium via Cu (III) species formed on the electrode.

• Bulletin of the Korean Chemical Society
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• v.9 no.4
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• pp.240-243
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• 1988

Degradation of the 90 K superconductor $YBa_2Cu_3O_{7-{\delta}}$ in water and humid atmosphere were studied and its decomposition products were identified as $BaCO_3$, CuO, $Y_2(CO_3)_3{\cdot}3H_2O$ and $O_2$. XRD analysis, iodometric titration and IR-spectroscopy of the degraded samples suggest that the $YBa_2Cu_3O_{7-{\delta}}$ decomposes in three steps such as the reduction of $Cu^{3+}$ to $Cu^{2+}$, followed by the hydroxylation of $Ba^{2+}$ and $Y^{3+}$ via hydration and finally the formation of carbonates through the uptake of ambient $CO_2$.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.87-91
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• 2021

Various Cu ions are discharged into water from various industries, which results in a severe trouble for groundwater, soil, air, and eventually animals and humans. In this work, graphene oxide (GO) is introduced as a Cu removal absorber and the real-time monitoring method is demonstrated. The results show that GO is a very effective material to absorb Cu ions in the solution. In addition, the residual Cu ions in the solution is monitored via optical transmittance method, which well match with Inductively Coupled Plasma Mass Spectrometer (ICP-MS) analysis.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.49-53
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• 2009

In order to investigate the formation behavior of hollow Cu via for MEMS packaging, we observed the microstructure of the Cu vias and measured the average thickness and the thickness deviation with variations of pulse-reverse pulse current density and electrodeposition time. With electrodeposition for 3 hours at the pulse and reverse pulse current densities of $-5\;mA/cm^2$ and $15\;mA/cm^2$, the average thickness and the thickness deviation of the Cu vias were $5\;{\mu}m$ and $0.63\;{\mu}m$, respectively. With increasing the electrodeposition time to 6 hours, it was possible to form the Cu vias, of which the average thickness and thickness variation of the Cu vias were $10\;{\mu}m$ and $1\;{\mu}m$, respectively. With increasing the pulse and reverse pulse current densities to $-10\;mA/cm^2$ and $30\;mA/cm^2$, Cu vias of uniform thickness could not be formed due to the faster increase of the thickness deviation than that of the average thickness with increasing the electrodeposition time.

• Journal of Powder Materials
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• v.18 no.4
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• pp.327-331
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• 2011

In order to fabricate the porous metal with controlled pore characteristics, unique processing by using metal oxide powder as the source and camphene as the sublimable material is introduced. CuO powder was selected as the source for the formation of Cu metal via hydrogen reduction. Camphene-based CuO slurry, prepared by milling at $47^{\circ}C$ with a small amount of dispersant, was frozen at $-25^{\circ}C$. Pores were generated subsequently by sublimation of the camphene. The green body was hydrogen-reduced at $200^{\circ}C$ for 30 min, and sintered at $500-700^{\circ}C$ for 1 h. Microstructural analysis revealed that the sintered Cu showed aligned large pore channels parallel to the camphene growth direction, and fine pores are formed around the large pore. Also, it showed that the pore size was controllable by the slurry concentration.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.12
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• pp.37-42
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• 1999

In this paper, some of main processes for the next generation integrated circuits, such as Cu damascene process using CMP, electron beam lithography, $SiO_2$ CVD and RIE, Ti/Cu-CVD were carried cut and then, two level Cu interconnects were accomplished. In the results of CMP unit processes, a 4,635 ${\AA}$/min of removal rate, a selectivity of Cu : $SiO_2$ of 150:1, a uniformity of 4.0% are obtained under process conditions of a head pressure of 4 PSI, table and head speed of 25rpm, a oscillation distance of 40 mm, and a slurry flow rate of 40 ml/min. Also 0.18 ${\mu}m\;SiO_2$ via-line patterns are fabricated using 1000 ${\mu}C/cm^2$ dose, 6 minute and 30 second development time and 1 minute and 30 second etching time. And finally sub-0.2 ${\mu}$ twolevel metal interconnects using the developed processes were fabricated and the problems of multilevel interconnects are discussed.