• Korean Journal of Materials Research
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• v.30 no.3
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• pp.105-110
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• 2020

Cu/PET composite films are widely used in a variety of wearable electronics. Lifetime of the electronics is determined by adhesion between the Cu film and the PET substrate. The formation of an anisotropic nanostructure on the PET surface by surface modification can enhance Cu/PET interfacial adhesion. The shape and size of the anisotropic nanostructures of the PET surface can be controlled by varying the surface modification conditions. In this work, the effect of Cu/PET interface nanostructures on the failure mechanism of a Cu/PET flexible composite film is studied. From observation of the morphologies of the anisotropic nanostructures on plasma-treated PET surfaces, and cross-sections and surfaces of the fractured specimens, the Cu/PET interface area and nanostructure width are analyzed and the failure mechanism of the Cu/PET film is investigated. It is found that the failure mechanism of the Cu/PET flexible composite film depends on the shape and size of the plasmatreated PET surface nanostructures. Cu/PET interface nanostructures with maximal peel strength exhibit multiple craze-crack propagation behavior, while smaller or larger interface nanostructures exhibit single-path craze-crack propagation behavior.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.484-488
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• 2007

Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4＋NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.130-130
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• 2016

Bioinspired hierarchical nanostructures for self-cleaning s-tnwjurface and SERS substrates are investigated. The multi-level hierarchy is combined with CuO nanowire and additional nanoscale structures. CuO nanowire, which has extremely high aspect ratio, serves as a base structure of multi-level hierarchy and additional flower like structures are placed on the CuO nanowires. Since as-fabricated CuO nanostructures are hydrophilic, the surface is coated with perfluorooctyltrichlorosilane in order to change its wetting property to hydrophobic. While those CuO based nanostructures have a sufficient roughness for superhydrophobic characteristics, hierarchical nanoflowers on nanowire structures lead to a self-cleaning surface. Furthermore, flower like nanostructures provide reentrant curvatures, thus enabling oleophobic property. The surfaces has a repellency even for a tiny droplet (10 nL) of low surface tension liquids (~35 mN/m). On the on hands, nanoflowers provide many number of nanoscale gaps. After a thin layer of silver is deposited on the surface of CuO nanostructures, those nanoscale gaps act as hot-spot for surface enhanced Raman scattering (SERS). To analyze SERS enhancement of the surfaces, Raman shift is measured with varying molar density of 4-Mercaptopyridine from mM to pM. From these results, hierarchical CuO nanostructures are suitable for self-maintenance and cost effective SERS sensing applications.

• Journal of the Korean institute of surface engineering
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• v.56 no.3
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• pp.180-184
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• 2023

Scholars have proposed wafer-level bonding and three-dimensional (3D) stacked integrated circuit (IC) and have investigated Cu-Cu bonding to overcome the limitation of Moore's law. However, information about quantitative Cu-Cu direct-bonding conditions, such as temperature, pressure, and interfacial adhesion energy, is scant. This study determines the optimal temperature and pressure for Cu-Cu bonding by varying the bonding temperature to 100, 150, 200, 250, and 350 ℃ and pressure to 2,303 and 3,087 N/cm². Various conditions and methods for surface treatment were performed to prevent oxidation of the surface of the sample and remove organic compounds in Cu direct bonding as variables of temperature and pressure. EDX experiments were conducted to confirm chemical information on the bonding characteristics between the substrate and Cu to confirm the bonding mechanism between the substrate and Cu. In addition, after the combination with the change of temperature and pressure variables, UTM measurement was performed to investigate the bond force between the substrate and Cu, and it was confirmed that the bond force increased proportionally as the temperature and pressure increased.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.293-299
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• 1998

We have investigated the atomic and electronic structures of Cu-adsorbed Si(100)-2$\times$1 surface, by using LEED and UPS. In the UPS spectra, the weak structures (peaks) related to Cu silicide appeared for low coverages less than 1.3 ML at room temperature, and the intensity of Cu 3d band rapidly increased with respect to Cu coverages. The Cu silicide peaks become clear after Cu deposition at room temperature followed by high temperature annealing ($\geq 300^{\circ}C$) or for Cu deposited surface at the substrate temperature of $400^{\circ}C$. On the other hand, these structures disappeared by annealing at $750^{\circ}C$. At very low coverage, a surface state near Fermi level $(E_F)$ was observed at $400^{\circ}C$. According to the rigid band model, it seems to be originated from the surface empty state occupied partially with Cu 4s electron. In the LEED patterns, no Cu-induced superstructure observed for RT-depositions and post annealing, while there were several surface structures which depend on substrate temperatures and coverages. we observed the clean surface 2$\times$1+2$\times$2 phase for 1.5 ML at $400^{\circ}C$, the clean surface 2$\times$1+5$\times$1 phase for 0.5 ML at $450^{\circ}C$ and the clean surface 2$\times$1+2$\times$2+5$\times$2+5$\times$5+10$\times$2 mixed phases for 3 ML at $450^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.217-220
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• 2014

We studied the plating properties of Sn-Pb solder according to the shape of the Cu wire's cross-section for photovoltaic ribbon. The thickness of the Sn-Pb layer largely decreased to 29% on a curved Cu surface, compared to a flat Cu surface. This phenomenon is caused by the geometrical decrease in the contact angle of the liquid Sn-Pb solder and an increase in the surface energy of the solid/vapor on the curved Cu surface. We suggest a new ribbon's design where the Cu wire's cross-section is a semi-ellipse. These semi-ellipse ribbons can decrease the use of Sn-Pb solder to 64% and increase the photovoltaic efficiency, by reducing the contact area between the ribbon and cell, to 84%. We also see an improvement of reflectivity in the curved surface.

• Journal of the Korean institute of surface engineering
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• v.42 no.5
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• pp.191-196
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• 2009

Nanocrystalline Cu thin films were electrodeposited from sulfate baths and investigated systematically the influences of $Cu^{2+}$ concentration and additives on current efficiency, residual stress, surface morphology, and XRD patterns of electrodeposited Cu film. Current efficiency was nearly 100% at from 0.2M to 1.0 M $Cu^{2+}$ concentration. but it was linearly increased with $Cu^{2+}$ concentration at less than 0.2M. The residual stress was observed in range of 7.9 to 18.4 MPa and tensile stress mode. Dendritic and powdered form was obtained at below 0.1 M. As increased with $Cu^{2+}$ concentration in solution, the main peak in the XRD pattern shifted (111) and (220) from (200). In the other hand, all about 100% current efficiency observed in all additive concentration systems, and residual stress observed in range of 20.4 to 26.3 MPa tensile stress. The condition 5(Ultra make-up - 10 ml/l, Ulta A - 0.5ml/l, Ultr B - 0.5 ml/l) was good surface morphology, and fcc(111) peak in XRD patterns increased with increasing additive concentration.

• Journal of the Korean Ceramic Society
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• v.41 no.6
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• pp.435-438
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• 2004

MOCVD is one of the major deposition techniques for Cu thin films and Ta-Si-N is one of promising barrier metal candidates for Cu with high thermal stability. Effects of hydrogen plasma pretreatment of the underlying Ta-Si-N film surface on the Cu nucleation in Cu MOCVD were investigated using scanning electron microscopy, X-ray photoelectron spectroscopy and Auger electron emission spectrometry analyses. Cu nucleation in MOCVD is enhanced as the rf-power and the plasma exposure time are increased in the hydrogen plasma pretreatment. The optimal plasma treatment process condition is the rf-power of 40 Wand the plasma exposure time of 2 min. The hydrogen gas flow rate in the hydrogen plasma pretreatment process does not affect Cu nucleation much. The mechanism through which Cu nucleation is enhanced by the hydrogen plasma pretreatment of the Ta-Si-N film surface is that the nitrogen and oxygen atoms at the Ta-Si-N film surface are effectively removed by the plasma treatment. Consequently the chemical composition was changed from Ta-Si-N(O) into Ta-Si at the Ta-Si-N film surface, which is favorable for Cu nucleation.

• Journal of the Korean institute of surface engineering
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• v.32 no.6
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• pp.647-657
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• 1999

Due to the inherently poor adhesion strength of Cu-based leadframe/EMC (Epoxy Molding Compound) interface, popcorn cracking of thin plastic packages frequently occurs during the solder reflow process. In the present work, in order to enhance the adhesion strength of Cu-based leadframe/EMC interface, black-oxide layer was formed on the leadframe surface by chemical oxidation of leadframe, and then oxidized leadframe sheets were molded with EMC and machined to form SDCB (Sandwiched Double-Cantilever Beam) and SBN (Sandwiched Brazil-Nut) specimens. SDCB and SBN specimens were designed to measure the adhesion strength between leadframe and EMC in terms of critical energy-release rate under quasi-Mode I ($G_{IC}$ ) and mixed Mode loading ($G_{C}$ /) conditions, respectively. Results showed that black-oxide treatment of Cu-based leadframe initially introduced pebble-like X$C_2$O crystals with smooth facets on its surface, and after the full growth of $Cu_2$O layer, acicular CuO crystals were formed atop of the $Cu_2$O layer. According to the result of SDCB test, $Cu_2$O crystals on the leadframe surface did not increase ($G_{IC}$), however, acicular CuO crystals on the $Cu_2$O layer enhanced $G_{IC}$ considerably. The main reason for the adhesion improvement seems to be associated with the adhesion of CuO to EMC by mechanical interlocking mechanism. On the other hand, as the Mode II component increased, $G_{C}$ was increased, and when the phase angle was -34$^{\circ}$, crack Kinking into EMC was occured.d.

• Journal of the Korean institute of surface engineering
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• v.27 no.5
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• pp.273-284
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• 1994

Thermal behavior of Cu-Cr thin alloy films has been investigated by SEM, AES, and TEM. Cu-Cr alloy films containing 3wt% Cr, 8wt% Cr have been sputter-deposited onto polyimide substrates and heat treated at $400^{\circ}C$ for 2hrs in the various atmosphere. Before heat treatment, Cu and Cr content in the film are uniform through the thickness and oxygen content in the film is negligible. Redistribution of Cr, Cu, and O in the film due to heat treatment depends on the Cr content and heat treatment atmoshpere. There kinds of thermal behavior are ascribed to the formation of surface and interface oxides as well as internal oxidation. Hillocks are observed on the surface of Cu-Cr alloy films which have been heat treated in N2. The hillocks are composed of large grainss of Cu.