• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.158-162
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• 2001

In this report, a new process for patterning of YBaCuO thin films, ICP(inductively coupled plasma) method, is described by comparing with existing wet etching method. Two 100㎛ wide and 2mm long YBaCuO striplines on LaAlO$_3$ substrates have been fabricated using two patterning techniques. And the properties were compared with the critical temperature and the SEM photography. Then, the critical temperatures of two samples were about 88 K, but the cross section of sample using ICP method was shaper than that using the wet etching method. ICP method can be used as a good etching technique process for patterning of YBaCuO superconductor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.244-247
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• 2002

NdBaCuO thin films were prepared on $SrTiO_{3}$ substrates by RF magnetron sputtering. These as-grown films were classified into 3type. The resistivity of the deposited films are usually lower than of the YBCO film. The Tc (onset) and Tc (R=0) in the optimized thin films are as high as 90 and 80K, respectively. These as-grown films are highly uniform and semi-trans parent and have a room temperature resistivity of $0.3m{\Omega}cm$.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2009년도 춘계학술대회 논문집
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• pp.432-434
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• 2009

Metal nano-wire arrays on Cu-coated seed layers were fabricated by aqueous solution method using sulfate bath at room temperature. The seed layers were coated on Anodic aluminum oxide (AAO) bottom substrates by electrochemical deposition technique, length and diameter of metal nano-wires were dominated by controlling the deposition parameters, such as deposition potential and time, electrolyte temperature. Anodic aluminum oxide (AAO) was used as a template to prepare highly ordered Ni, Fe, Co and Cu multilayer magnetic nano-wire arrays. This template was fabricated with two-step anodizing method, using dissimilar solutions for Al anodizing. The pore of anodic aluminum oxide templates were perfectly hexagonal arranged pore domains. The ordered Ni, Fe, Co and Cu systems nano-wire arrays were characterized by Field Emission Scanning Electron Microscopy (FE-SEM) and Vibrating Sample Magnetometer (VSM). The ordered Ni, Fe, Co and Cu systems nano-wires had different preferred orientation. In addition, these nano-wires showed different magnetization properties under the electrodepositing conditions.

• 마이크로전자및패키징학회지
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• 제29권2호
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• pp.73-79
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• 2022

본 연구에서는 최근 저온접합 소재로 각광받고 있는 Ga과 대표적인 전극 물질인 Cu와의 반응연구를 실시하여 저온 솔더링 적용시 필요한 정보들을 확인하고자 하였다. 80-200℃ 온도범위에서 Ga과 Cu/Au 기판을 반응시켜 계면반응 및 금속간화합물(IMC) 성장을 관찰하고 분석하였다. 반응계면에서 성장하는 주요한 IMC는 CuGa₂ 상이었으며 그 상부에는 작은 입자크기를 가지는 AuGa₂ IMC 그리고 하부에는 얇은 띠 형상의 Cu₉Ga₄ IMC가 형성되었다. CuGa₂ 입자들은 scallop 형상을 보이며 Cu₆Sn₅ 성장의 경우와 비슷하게 반응시간이 증가함에 따라서 큰 형상변화없이 입자 크기가 증가하였다. CuGa₂ 성장기구를 분석한 결과 120-200℃ 온도범위에서 시간지수는 약 3.0으로 산출되었고, 활성화에너지는 17.7 kJ/mol로 측정되었다.

• Bulletin of the Korean Chemical Society
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• 제31권8호
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• pp.2247-2254
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• 2010

The surface structures of copper phthalocyanine (CuPc) thin films deposited on sulphur-passivated and plane perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA)-covered InAs(100) surfaces have been studied by low energy electron diffraction (LEED) and van der Waals (vdW) intermolecular interaction energy calculations. The annealing to $300^{\circ}C$ and $450^{\circ}C$ of $(NH_4)_2S_x$-treated InAs(100) substrates produces a ($1{\times}1$) and ($2{\times}1$) S-passivated surface respectively. The CuPc deposition onto the PTCDA-covered InAs(100) surface leads to a ring-like diffraction pattern, indicating that the 2D ordered overlayer exists and the structure is dominantly determined by the intermolecular interactions rather than substrate-molecule interactions. However, no ordered LEED patterns were observed for the CuPc on S-passivated InAs(100) surface. The intermolecular interaction energy calculations have been carried out to rationalise this structural difference. In the case of CuPc unit cells on PTCDA layer, the planar layered CuPc structure is more stable than the $\alpha$-herringbone structure, consistent with the experimental LEED results. For CuPc unit cells on a S-($1{\times}1$) layer, however, the $\alpha$-herringbone structure is more stable than the planar layered structure, consistent with the absence of diffraction pattern. The results show that the lattice structure during the initial stages of thin film growth is influenced strongly by the intermolecular interactions at the interface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.526-530
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• 2004

We report the space charge and the surface potential of the interface between metal and CuPc according to isotropic property and different metal by measuring the microwave reflection coefficients $S_{11}$ of copper(II)-phthalocyanine(CuPc) thin films by using a near-field microwave microscope(NSMM) in order to understand. CuPc thin films were prepared on gold and aluminium substrates using a thermal evaporation method. Two kinds of CuPc thin films were prepared. One was deposited on preheated substrate at $150^{\circ}C$ and the other was annealed after deposition by using thermal evaporation methods. The microwave reflection coefficients $S_{11}$ of CuPc thin films were changed by the dependence on the heat treatment conditions. By comparing reflection coefficient $S_{11}$ we measured electrical conductivity of CuPc thin films and studied this results with respect to the surface potential and space charge of the interface between metal and CuPc thin films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1268-1269
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• 2008

$CuInS_2$ thin films were fabricated by sulpurization of Cu/In Stacked elemental layer deposited onto glass substrates by vacuum annealing at various temperatures. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films by composition ratio. Physical properties of the thin film were investigated at various fabrication conditions; substrate temperature, annealing temperature and annealing time by XRD, FE-SEM and hall measurement system. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer.

• 한국재료학회지
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• 제25권4호
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• pp.171-176
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• 2015

We present the detection characteristics of nitrogen monoxide(NO) gas using p-type copper oxide(CuO) thin film gas sensors. The CuO thin films were fabricated on glass substrates by a sol-gel spin coating method using copper acetate hydrate and diethanolamine as precursors. Structural characterizations revealed that we prepared the pure CuO thin films having a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the NO gas sensing measurements that the p-type CuO thin film gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $100^{\circ}C$. Additionally, these CuO thin film gas sensors were found to show reversible and reliable electrical response to NO gas in a range of operating temperatures from $60^{\circ}C$ to $200^{\circ}C$. It is supposed from these results that the p-type oxide semiconductor CuO thin film could have significant potential for use in future gas sensors and other oxide electronics applications using oxide p-n heterojunction structures.

• 한국재료학회지
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• 제25권5호
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• pp.238-246
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• 2015

$H_2S$ is a flammable toxic gas that can be produced in plants, mines, and industries and is especially fatal to human body. In this study, CuO nanowire structure with high porosity was fabricated by deposition of copper on highly porous singlewall carbon nanotube (SWCNT) template followed by oxidation. The SWCNT template was formed on alumina substrates by the arc-discharge method. The oxidation temperatures for Cu nanowires were varied from 400 to $800^{\circ}C$. The morphology and sensing properties of the CuO nanowire sensor were characterized by FESEM, Raman spectroscopy, XPS, XRD, and currentvoltage examination. The $H_2S$ gas sensing properties were carried out at different operating temperatures using dry air as the carrier gas. The CuO nanowire structure oxidized at $800^{\circ}C$ showed the highest response at the lowest operating temperature of $150^{\circ}C$. The optimum operating temperature was shifted to higher temperature to $300^{\circ}C$ as the oxidation temperature was lowered. The results were discussed based on the mechanisms of the reaction with ionosorbed oxygen and the CuS formation reaction on the surface.

• 한국표면공학회지
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• 제43권1호
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• pp.1-6
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• 2010

The effect of organic additives, 1-(3-sulfoproyl)-2-vinylpyridineium hydroxide (SVH) and thiourea (TU), on the precision copper electrodeposition was investigated with optical, electrochemical and x-ray diffraction techniques. It was found that SVH played a r ole as a n accelerator and TU as an i nhibitor during the electroreduction of cupric ions in acidic Cu electroplating solution. Through electrochemical measurements, TU showed more strong interaction with cupric ions than SVH and dominated overall Cu electroplating process when both additives were present in the solution. In the case of three dimensional Cu electrodeposition on the 20 ${\mu}m$-patterned Ni substrates, SVH controlled the upright growth of Cu electrodeposits and so determined its flatness, while TU prohibited the lateral spreading of Cu in the course of pulse-reverse pulse current adaptation. With microscopic observation, we obtained the optimum organic additives composition, that is, 100 ppm SVH and 200 ppm TU during the current pulsation.