• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1544-1546
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• 1996

Thin films of Cu-Ni alloys of various compositions were prepared by RF sputtering onto glass and stainless steel substrates. The effect of composition, substrate temperature, Ar partial pressure, aging time on the electrical properties of Cu-Ni film strain gages in the thickness range $500{\sim}2000{\AA}$ was studied. The maximum resistivity is obtained from 53wt%Cu-47wt%Ni films, while their TCR becomes minimum. This tendency is very desirable for thin film strain gages.

• Journal of the Korean Applied Science and Technology
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• v.11 no.2
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• pp.147-150
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• 1994

Ultra thin films of HDSM-CuPc(Tetra-3-hexadecylsulphamoylcopperphthalocya-nine) were formed on various substrates by Langmuir-Blodgett method, where HDSM-CuPc was synthesized by attaching long-chain alkylamine(hexa-decylamine) to CuPc. The reaction product was identified with FT- IR, UV-visible absorption spectroscopies, elemental analysis and thin layer chromatography. The formation of ultrathin films of HDSM-CuPc was confirmed by FT-IR and UV-visible spectroscpies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.54-56
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• 2005

Fabrication of c-axis oriented $(Hg_{0.75}Rc_{0.25})Ba_2Ca_2Cu_3O_y$ thick fabricated has been attempted using Ni substrates with the buffer layer of Cr or NiO. Coexistence of $(Hg_{0.75}Rc_{0.25})Ba_2Ca_3Cu_4O_y$ pellets wad found to stabilize $(Hg_{0.75}Rc_{0.25})Ba_2Ca_2Cu_3O_y$ phase of the tape. The c-axis oriented tapes were reproducibly obtained on the NiO/Ni substerate and they recorded high $B_{irr}$ at 77K.$(Hg_{0.75}Rc_{0.25})Ba_2Ca_2Cu_3O_y$ 1223.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.10-10
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• 2001

In this paper, initial depositing process of electroless Ni-Cu-P alloy was investigated by means of SEM, TEM and AES. The results show that the initial deposition is inhomogeneous and there exist different transition layers between different coatings and substrates, which are decided by the structures and compositions of the bath. For Ni-P binary alloy, its deposition takes place superiorly at grain boundary and on some grains with beneficial texture, the thickness of transition layer composed of Ni-Fe-P reaches 2000 angstrom. But during initiation of Ni-Cu-P trinary alloy, only at grain boundary is prIor to be deposited electrolessly, transited layer contains Ni-Fe-Cu-P and is decreased to about 500 angstrom. The structures of the films of Ni-P and Ni-Cu-P are crystalline at the initial depositing stage. The mechanisms of the process are put forward in this paper.

• Current Photovoltaic Research
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• v.5 no.1
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• pp.20-24
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• 2017

Recently, three-dimensional (3D) light harvesting structures are highly attracted because of their high light harvesting capacity and charge collection efficiencies. In this study, we have fabricated $Cu_2ZnSn(S_xSe_{1-x})_4$ based 3D thin film solar cells on PR patterned Molybdenum (Mo) substrates using photolithography technique. Specifically, Mo patterns were deposited on PR patterned Mo substrates by sputtering and the thin Cu-Zn-Sn stacked layer was deposited over this Mo patterns by sputtering technique. The stacked Zn-Sn-Cu precursor thin films were sulfo-selenized to form CZTSSe pattern. Finally, CZTSSe absorbers were coated with thin CdS layer using chemical bath deposition and ZnO window layer was deposited over CZTSSe/CdS using DC sputtering technique. Fabricated 3-D solar cells were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF) analysis, Field-emission scanning electron microscopy (FE-SEM) to study their structural, compositional and morphological properties, respectively. The 3% efficiency is achieved for this kind of solar cell. Further efforts will be carried out to improve the performance of solar cell through various optimizations.

• Applied Chemistry for Engineering
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• v.8 no.4
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• pp.589-594
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• 1997

Superconducting $YBa_2Cu_3O_y$ thin films were prepared at the deposition temperature of $650^{\circ}C$ under oxygen partial pressure of 0.0126 Torr on Si(111) and SrTiO3(100) substrates by chemical vapor deposition technique using $\beta$-diketonates of Y, Ba and Cu as source materials. The thin film fabricated on $SrTiO_3(100)$ had a $T_{c,onset}$ of 91K and $T_{c.0}$ of 87K. The thin film prepared on Si(111) had a $T_{c,onset}$ of 91K but didn't have a $T_{c.0}$ at liquid nitrogen boiling point(77.3K). Dense and two-dimensionally well alligned microstructure was developed for the film deposited on $SrTiO_3(100)$ substrate whereas a relatively porous and randomly distributed microstructure was developed for the film prepared on Si(111) substrate.

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.1985-1988
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• 2014

$Cu_2ZnSnSe_4$ (CZTSe) thin films were synthesized on transparent conducting oxide glass substrates via a simple, non-toxic, and low-cost process using a precursor solution paste. A three-step heating process (oxidation, sulfurization, and selenization) was employed to synthesize a CZTSe thin film as an absorber layer for use in thin-film solar cells. In particular, we focused on the effects of sulfurization conditions on CZTSe film formation. We found that sulfurization at $400^{\circ}C$ involves the formation of secondary phases such as $CuSe_2$ and $Cu_2SnSe_3$, but they gradually disappeared when the temperature was increased. The formed CZTSe thin films showed homogenous and good crystallinity with grain sizes of approximately 600 nm. A solar cell device was tentatively fabricated and showed a power conversion efficiency of 2.2% on an active area of 0.44 $cm^2$ with an open circuit voltage of 365 mV, a short current density of 20.6 $mA/cm^2$, and a fill factor of 28.7%.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.12
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• pp.2914-2920
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• 2013

In this paper, we prepared the samples with the heat-treated substrate by means of co-evaporation method. The samples prepared with heat-treated substrate of $500^{\circ}C$showed the vacancy on the surface, and it could be prevented by Se ambient condition. The samples prepared with variable heat-treated substrates such as $430^{\circ}C$, $460^{\circ}C$, $480^{\circ}C$ and $500^{\circ}C$ showed the increase of grain resulted to the increase of the density. Based on the XRD analysis, the heat treatment could remove the Cu2Se phase of the samples, but it didn't affect the absorption index of the samples. We, therefore, conclude the absorption index is not affected by heat treatment and is controlled by the thickness of the sample.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.18-20
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• 2016

Transparent and conducting IGZO thin films were deposited by RF magnetron sputtering on thin Cu coated glass substrates to investigate the effect of a Cu buffer layer on the structural, optical, and electrical film properties. Although X-ray diffraction (XRD) analysis revealed that both the IGZO single layer and IGZO/Cu bi-layered films were in the amorphous phase, the IGZO/Cu films showed a lower resistivity of 5.7×10⁻⁴ Ωcm due to the increased mobility and high carrier concentration. The decreased optical transmittance of the IGZO/Cu films was also attributed to a one order of magnitude higher carrier concentration than the IGZO films. From the observed results, the thin Cu layer is postulated to be an effective buffer film that can enhance the opto-electrical performance of the IGZO films in transparent thin film transistors.

• Journal of the Korean institute of surface engineering
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• v.37 no.6
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• pp.313-318
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• 2004

Vertically-aligned and uniformly-distributed CuO nanowires were formed on copper-coated Si substrates by wet chemical process, immersing them in a hot alkaline solution. The effects of hydrogen plasma treatment on the field emission characteristics of CuO nanowires were investigated. It was found that hydrogen plasma treatment enhanced the field emission properties of CuO nanowires by showing a decrease in turn-on voltage, and an increase in emission current density, and stability of current-voltage curves. However, the excessive hydrogen plasma treatment made the I-V curves unstable. It was confirmed by XPS (X-ray Photoelectron Spectroscopy) analysis that hydrogen plasma treatment deoxidized CuO nanowires, thereby the work function of the nanowires decreased from 4.35 eV (CuO) to 4.1 eV (Cu). It is thought that the decrease in the work function enhanced the field emission characteristics. It is well-known that the lower the work function, the better the field emission characteristics. The results suggest that the hydrogen plasma treatment is very effective in achieving enhanced field emission properties of the CuO nanowires, and there may exist an optimal hydrogen plasma treatment condition.