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http://dx.doi.org/10.4313/TEEM.2016.17.1.18

Effect of a Cu Buffer Layer on the Structural, Optical, and Electrical Properties of IGZO/Cu bi-layered Films  

Moon, Hyun-Joo (School of Materials Science and Engineering, University of Ulsan)
Gong, Tae-Kyung (School of Materials Science and Engineering, University of Ulsan)
Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
Choi, Dong-Hyuk (Dongkook Industry Co., Ltd.)
Son, Dong-Il (Dongkook Industry Co., Ltd.)
Publication Information
Transactions on Electrical and Electronic Materials / v.17, no.1, 2016 , pp. 18-20 More about this Journal
Abstract
Transparent and conducting IGZO thin films were deposited by RF magnetron sputtering on thin Cu coated glass substrates to investigate the effect of a Cu buffer layer on the structural, optical, and electrical film properties. Although X-ray diffraction (XRD) analysis revealed that both the IGZO single layer and IGZO/Cu bi-layered films were in the amorphous phase, the IGZO/Cu films showed a lower resistivity of 5.7×10−4 Ωcm due to the increased mobility and high carrier concentration. The decreased optical transmittance of the IGZO/Cu films was also attributed to a one order of magnitude higher carrier concentration than the IGZO films. From the observed results, the thin Cu layer is postulated to be an effective buffer film that can enhance the opto-electrical performance of the IGZO films in transparent thin film transistors.
Keywords
IGZO; Cu; Magnetron sputtering; XRD; AFM; Figure of merit;
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