• 제목/요약/키워드: Cu substrates

검색결과 463건 처리시간 0.024초

Sputter Seeding을 이용한 CVD Cu 박막의 비선택적 증착 및 기판의 영향 (The Blanket Deposition and the Sputter Seeding Effects on Substrates of the Chemically Vapor Deposited Cu Films)

  • 박종만;김석;최두진;고대홍
    • 한국세라믹학회지
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    • 제35권8호
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    • pp.827-835
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    • 1998
  • Blanket Copper films were chemically vapor deposited on six kinds for substrates for scrutinizing the change of characteristics induced by the difference of substrates and seeding layers. Both TiN/Si and {{{{ { SiO}_{2 } }}/Si wafers were used as-recevied and with the Cu-seeding layers of 40${\AA}$ and 160${\AA}$ which were produced by sputtering The CVD processes were exectued at the deposition temperatures between 130$^{\circ}C$ and 260$^{\circ}C$ us-ing (hfc)Cu(VTMS) as a precursor. The deposition rate of 40$^{\circ}C$ Cu-seeded substrates was higher than that of other substrates and especially in seeded {{{{ { SiO}_{2 } }}/Si substrate because of the incubation period reducing in-duced by seeding layer at the same deposition time and temperature. The resistivity of 160${\AA}$ Cu seeded substrate was lower then that of 40 ${\AA}$ because the nucleation and growth behavior in Cu-island is different from the behavior in {{{{ { SiO}_{2 } }} substrate due to the dielectricity of {{{{ { SiO}_{2 } }}.

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PoP용 Substrate의 Warpage 감소를 위해 유한요소법을 이용한 설계 파라메타 연구 (Study on Design Parameters of Substrate for PoP to Reduce Warpage Using Finite Element Method)

  • 조승현;이상수
    • 마이크로전자및패키징학회지
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    • 제27권3호
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    • pp.61-67
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    • 2020
  • 본 논문에서는 FEM(유한요소) 기법을 사용하여 칩이 실장되는 않은 substrate와 칩이 실장된 substrate의 warpage를 해석하여 칩의 실장이 warpage에 미치는 영향을 비교·분석하였다. 또한, warpage를 감소시키기 위한 substrate의 층별 두께의 영향도 분석과 층별 두께 조건을 다구찌법에 의한 신호 대 잡음 비로 분석하였다. 해석 결과에 의하면 칩이 실장되면 substrate의 warpage는 패턴의 방향이 변할 수 있고, 칩이 실장되면서 패키지의 강성도(stiffness)가 증가하고, 패키지 상·하의 열팽창계수의 차이가 작아지면서 warpage는 감소하였다. 또한, 칩이 실장되지 않은 substrate를 대상으로 설계 파라메타의 영향도 분석 결과에 의하면 warpage를 감소시키기 위해서는 회로층 중에서 내층인 Cu1과 Cu4를 중점 관리하고, 다음으로 바닥면의 solder resist 층의 두께와 Cu1과 Cu2 사이의 프리프레그 층의 두께를 관리해야 한다.

Lattice strain effects on superconductivity in $La_{2-x}Sr_{x}CuO_{4}$ single-crystalline films grown by IR-LPE technique

  • Tanaka, I.;Islam, A.T.M.N.;Wataudhi, S.
    • 한국결정성장학회지
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    • 제13권4호
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    • pp.172-175
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    • 2003
  • We have investigated effects of the lattice mismatch between the LPE films and the substrates. We have grown $La_{2-x}Sr_{x}CuO_{4}$(x=0.1 to 0.15) single crystalline films on single crystalline substrates having different lattice parameter ratio c/a e.g., $La_{2-x}Sr_{x}Cu_{1-y}Zn_{y}O_{4},\;La_{2-x}Ba_{x}CuO_{4},\; LaSrAlO_{4}\;and\;La_{2-x}Sr_{x}Cu_{1-y}Al_{y}O_{4}$ etc., using the IR-LPE technique. The superconducting properties of the grown films were found to vary significantly depending on the lattice mismatch with different substrates.

Linear Ion Beam Applications for Roll-to-Roll Metal Thin Film Coatings on PET Substrates

  • Lee, Seunghun;Kim, Do-Geun
    • Applied Science and Convergence Technology
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    • 제24권5호
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    • pp.162-166
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    • 2015
  • Linear ion beams have been introduced for the ion beam treatments of flexible substrates in roll-to-roll web coating systems. Anode layer linear ion sources (300 mm width) were used to make the linear ion beams. Oxygen ion beams having an ion energy from 200 eV to 800 eV used for the adhesion improvement of Cu thin films on PET substrates. The Cu thin films deposited by a conventional magnetron sputtering on the oxygen ion beam treated PET substrates showed Class 5 adhesion defined by ASTM D3359-97 (tape test). Argon ion beams with 1~3 keV used for the ion beam sputtering deposition process, which aims to control the initial layer before the magnetron sputtering deposition. When the discharge power of the linear ion source is 1.2 kW, static deposition rate of Cu and Ni were 7.4 and $3.5{\AA}/sec$, respectively.

Rubbing effect on orientation of Copper Phthalocyanine for flexible organic field-effect transistors

  • Kim, Hyun-Gi;Jang, Jung-Soo;Choi, Suk-Won;Ishikawa, Ken;Takezoe, Hideo;Kim, Sung-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1319-1321
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    • 2009
  • Copper phthalocyanine (CuPc) Field-effect transistors (FETs) was successfully fabricated on plastic substrates. Orientation of CuPc crystallites on substrate could be obtained via rubbing process. It was revealed that CuPc crystallites were perpendicularly aligned on PES substrates with the rubbing direction. The performance of FETs was affected by orientation of CuPc on rubbed substrates.

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Screen printing 방법에 의한 후막형 Bi-Pb-Sr-Ca-Cu-O 초전도체의 소결조건과 기판의 초전도성에 미치는 영향 (Effects of Substrate and Sintering Conditions on the Properties of Screen Printed Bi-Pb-Sr-Ca-Cu-O Superconduction Thick Films)

  • 김혜동;임호빈
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1990년도 추계학술대회 논문집
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    • pp.26-30
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    • 1990
  • Bi$\_$0.7/Pb$\_$0.3/Sr$_1$Ca$_1$Cu$\_$1.8/Ox thick films were screen printed on magnesia(MgO), silver and yttrium stabilized zirconia (YSZ) substrates and were sintered in a boat with cover to prevent the evaporation. The high-Tc phase increase and the low-Tc phase and Ca$_2$PbO$_4$ decrease with an increase in sintering temperature from 835$^{\circ}C$ to 860$^{\circ}C$. YSZ substrate interact strongly with the oxide resulting in poor superconductor, while the Ag and MgO substrates were satisfactory to make screen printed superconductors. The Bi$\_$0.7/Pb$\_$0.3/Sr$_1$Ca$_1$Cu$\_$1.8/Ox thick films screen printed both on Ag and MgO substrates show high Tc phase of ~85% and Tc of 96K.

ICB seeding에 의한 CVD Cu 박막의 증착 및 특성 분석 (Copper Film Growth by Chemical Vapor Deposition: Influence of the Seeding Layer)

  • 윤경렬;최두진;김석;김기환;고석근
    • 한국재료학회지
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    • 제6권7호
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    • pp.723-732
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    • 1996
  • ICB 공정으로 선행 증착한 Cu Seeding 층이 이후의 CVD 공정으로 증착하는 최종의 Cu 박막의 기계적 전기적 특성에 미치는 영향을 고찰하였고, seening을 하지 않은 CVD-Cu 박막과의 특성을 비교하였다. seeding 층을 형성한 경우의 CVD-Cu 박막에 있어서 증착 속도가 증가하였으며, grain 크기의 균일성도 향상되는 경향을 보였다. 증착된 Cu 박막은 seening에 무관하게 모두 FCC 우선배향인 (111)의 결정배향을 나타냈으며, seeding 우에 성정된 박막의 경우 $I_{111}/I_{200}$비가 향상되었다.$ 180^{\circ}C$의 동일 조건하에서 증착하는 경우 $40\AA$ seeding층 위에 성장한 박막의 전기비저항이 $2.42\mu$$\Omega$.cm로 낮은 값을 나타내었으며, 130$\AA$ seeding 경우는 오히려 전기비저항이 증가하는 경향을 나타내었다. Cu 박막의 접착력은 seeding층의 두께가 $0\AA$에서 $130\AA$으 증가함에 따라 21N에서 27N 으로 향상되었다.

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RF마그네트론 스퍼터링법으로 제조한 $YBa_2Cu_3O_{7-x}$전도체 박막의 특성에 대한 기판의 영향 (Substrate effects on the characteristics of $YBa_2Cu_3O_{7-x}$ thin films prepared by RF magnetron sputtering)

  • 신현용;박창엽
    • E2M - 전기 전자와 첨단 소재
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    • 제8권1호
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    • pp.6-12
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    • 1995
  • High Tc superconducting YBa$_{2}$Cu$_{3}$$O_{7-x}$ thin films were prepared on various substrates by off-axis rf magnetron sputtering method to examine the substrate effects on the film structure and its R-T characteristics. The SEM analysis showed that the surface morphology of the grown YBa$_{2}$Cu$_{3}$O.sub 7-x/, film has different characteristic structure with different substrate used. The film on (100) SrTiO$_{3}$ substrate has critical current density of 3*10$^{5}$ A/cm$^{2}$ at 77K under zero magnetic field. The X-ray diffraction measurements revealed that the films on (100) SrTiO$_{3}$ substrate have mixed a-axis and c-axis normal to the substrate surface and the films on (100) MgO and ZrO$_{2}$/sapphire substrates have c-axis normal orientation to the substrate surface. However, YBa$_{2}$Cu$_{3}$$O_{7-x}$ films on (100) sapphire substrates showed no preferential orientation.ion.

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인듐 솔더의 젖음특성 (The Wetting Property of Indium Solder)

  • 김대곤;이창배;정승부
    • Journal of Welding and Joining
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    • 제20권5호
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    • pp.106-112
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    • 2002
  • In the present study, the wettability and interfacial tension between (bare Cu, electroless Ni/cu, immersion Au/Ni/Cu) substrates and indium solder were investigated as a function of soldering temperature, types of flux. The wettability of In solder increased with soldering temperature and solid content of flux. The wettability of In solder was affected by the substrate metal finish used, i.e., nickel, gold and copper. On the bare Cu substrate, In solder wet better than any of the substrate metal finishes tested. Intermetallic compound formation between liquid solder and substrate reduced the interfacial energy and improved wettability. For the identification of intermetallic compounds, X-Ray Diffraction(LRD) were employed. Experimental results showed that the intermetallic compounds, such as Cu11In9 and In27Ni10 are observed f3r different substrates respectively. The wetting kinetics is investigated by measuring wetting time with the wetting balance technique. The activation energy of wetting calculated for the In solder/cu substrate and In solder/electroless Au/Ni/Cu substrate are 36.13 and 27.36 kJ/mol, respectively.

금속나노입자-유전체 이층 구조 구현을 위한 반투명 Cu 나노입자층 형성에 관한 연구 (Study on Formation of Semitransparent Cu Nanoparticle Layers for Realizing Metal Nanoparticle-Dielectric Bilayer Structures)

  • 윤혜련;조윤이;윤회진;이승윤
    • 한국전기전자재료학회논문지
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    • 제33권6호
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    • pp.460-464
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    • 2020
  • This study reports the fabrication and application of semitransparent Cu nanoparticle layers. Spin coating and subsequent drying of a Cu colloid solution were performed to deposit Cu nanoparticle layers onto Si and glass substrates. As the spin speed of the spin coating increases, the density of the nanoparticles on the substrate decreases, and the agglomeration of nanoparticles is suppressed. This microstructural variation affects the optical properties of the nanoparticle layers. The transmittance and reflectance of the Cu nanoparticle layers increase with increasing spin speed, which results from the trade-off between the exposed substrate area and surface coverage of the Cu nanoparticles. Since the glass substrates coated with Cu nanoparticle layers are semitransparent and colored, it is anticipated that the application of a Cu nanoparticle-dielectric bilayer structure to transparent solar cells will improve the cell efficiency as well as aesthetic appearance.