• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.217-220
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• 2014

We studied the plating properties of Sn-Pb solder according to the shape of the Cu wire's cross-section for photovoltaic ribbon. The thickness of the Sn-Pb layer largely decreased to 29% on a curved Cu surface, compared to a flat Cu surface. This phenomenon is caused by the geometrical decrease in the contact angle of the liquid Sn-Pb solder and an increase in the surface energy of the solid/vapor on the curved Cu surface. We suggest a new ribbon's design where the Cu wire's cross-section is a semi-ellipse. These semi-ellipse ribbons can decrease the use of Sn-Pb solder to 64% and increase the photovoltaic efficiency, by reducing the contact area between the ribbon and cell, to 84%. We also see an improvement of reflectivity in the curved surface.

• Korean Chemical Engineering Research
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• 제54권1호
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• pp.108-113
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• 2016

A miniaturized lab-scale Cu plating cell for the metallization of electronic devices was fabricated and its deposit uniformity and profile were investigated. The plating cell was composed of a polypropylene bath, an electrolyte ejection nozzle which is connected to a circulation pump. In deposit uniformity evaluation, thicker deposit was found on the bottom and sides of substrate, indicating the spatial variation of deposit thickness was governed by the tertiary current distribution which is related to $Cu^{2+}$ transport. The surface morphology of Cu deposit inside photo-resist pattern was controlled by organic additives in the electrolyte as it led to the flatter top surface compared to convex surface which was observed in the deposit grown without organic additives.

• 전기화학회지
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• 제3권2호
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• pp.121-126
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• 2000

[ $AB_5$ ] 수소저장합금인 $LaNi_5$, 합금분말에 Ni 및 Cu 무전해 도금의 영향을 전기 화학적 실험을 통하여 고찰하였다. 전기 화학적 실험은 정전류 충$\cdot$방전 실험, 순환전류전위 실험, 교류 임피던스 실험 등을 실시하여 도금하지 않은 $LaNi_5$ 전극과 Ni 및 Cu 무전해 도금한 전극간의 특성을 비교 연구하였다. 현상학적인 분석으로는 SEM을 이용하여 분말상의 미세조직을 관찰하였으며 X-선 회절시험을 실시하였다 무전해 도금을 실시하여 Ni 및 Cu박막이 피복된 수소저장 합금은 활성화 특성파 싸이클 수명 등의 특성이 개선되었으며 도금하지 않은 전극에 비하여 반응속도가 증가하였다. 또한 충$\cdot$방전이 반복됨에 따라 전극과 전해질 계면에서의 전하이동저항이 현저하게 감소하였다. 따라서 본 연구에서 실시한 $LaNi_5$, 활물질에 Ni및 Cu 무전해 도금을 실시하면 초기 활성화반응을 촉진시키며 $LaNi_5$활물질이 전해질과의 직접 접촉을 피하게 되어 전극의 수명을 증가시키는 것을 알 수 있었다.

• 대한금속재료학회지
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• 제49권5호
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• pp.411-418
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• 2011

The current study investigates the electroplating characteristics of Sn-Cu eutectic micro-bumps electroplated on a Si chip for flip chip application. Under bump metallization (UBM) layers consisting of Cr, Cu, Ni and Au sequentially from bottom to top with the aim of achieving Sn-Cu bumps $10\times10\times6$ ${\mu}m$ in size, with 20${\mu}m$ pitch. In order to determine optimal plating parameters, the polarization curve, current density and plating time were analyzed. Experimental results showed the equilibrium potential from the Sn-Cu polarization curve is -0.465 V, which is attained when Sn-Cu electro-deposition occurred. The thickness of the electroplated bumps increased with rising current density and plating time up to 20 mA/$cm^2$ and 30 min respectively. The near eutectic composition of the Sn-0.72wt%Cu bump was obtained by plating at 10 mA/$cm^2$ for 20 min, and the bump size at these conditions was $10\times10\times6$ ${\mu}m$. The shear strength of the eutectic Sn-Cu bump was 9.0 gf when the shearing tip height was 50% of the bump height.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.13-13
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• 1999

• 융복합기술연구소 논문집
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• 제8권1호
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• pp.33-39
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• 2018

The screen printing method for forming the electrode by applying the existing pressure is difficult to apply to thin wafers, and since expensive Ag paste is used, it is difficult to solve the problem of cost reduction. This can solve both of the problems by forming the front electrode using a plating method applicable to a thin wafer. In this paper, the process conditions of electrode formation are optimized by using LIEP (Light-Induced Electrode Plating). Experiments were conducted by varying the Ni plating bath temperature $40{\sim}70^{\circ}C$, the applied current 5 ~ 15 mA, and the plating process time 5 ~ 20 min. As a result of the experiment, it was confirmed that the optimal condition of the structural characteristics was obtained at the plating bath temperature of $60^{\circ}C$, 15 mA, and the process time of 20 min. The Cu LIEP process conditions, experiments were conducted with Cu plating bath temperature $40{\sim}70^{\circ}C$, applied voltage 5 ~ 15 V, plating process time 2 ~ 15 min. As a result of the experiment, it was confirmed that the optimum conditions were obtained as a result of electrical and structural characteristics at the plating bath temperature of $60^{\circ}C$ and applied current of 15 V and process time of 15 min. In order to form Ni silicide, the firing process time was fixed to 2 min and the temperature was changed to $310^{\circ}C$, $330^{\circ}C$, $350^{\circ}C$, and post contact annealing was performed. As a result, the lowest contact resistance value of $2.76{\Omega}$ was obtained at the firing temperature of $310^{\circ}C$. The contact resistivity of $1.07m{\Omega}cm^2$ can be calculated from the conditionally optimized sample. With the plating method using Ni / Cu, the efficiency of the solar cell can be expected to increase due to the increase of the electric conductivity and the decrease of the resistance component in the production of the solar cell, and the application to the thin wafer can be expected.

• Transactions on Electrical and Electronic Materials
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• 제16권1호
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• pp.20-24
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• 2015

We studied the relationship between the surface smoothness of the internal Cu ribbon and the morphology of the Sn-Pb plating layer for solar cell modules. A bumpy surface was observed on the surface of the solar ribbon, which caused irregular reflection of light. Large, Pb-rich, primary ${\alpha}$-phases were found below the convex surface of the solar ribbon, passing from the surface of the internal Cu ribbon to the surface of the plating layer. The primary ${\alpha}$-phases heterogeneously nucleated on the convex surface of the Cu ribbon, and then largely grew to the convex surface of the plating layer. The restriction of the primary ${\alpha}$-phase's formation was enabled by enhancing the smoothness of the Cu ribbon's surface; it was also possible to increase the adhesive strength and decrease contact resistance. We confirmed that the solar ribbon's surface smoothness depends on the internal Cu ribbon's surface smoothness.

• 마이크로전자및패키징학회지
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• 제27권3호
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• pp.29-34
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• 2020

본 연구에서는 무전해 니켈 도금액 pH 변화에 따른 electroless nickel immersion gold (ENIG)/Sn-3.0wt.%Ag-0.5wt.%Cu(SAC305) 솔더 접합부 취성 파괴 거동에 대하여 평가하였다. ENIG 표면처리를 위한 무전해 니켈 도금액의 pH는 4.0에서 5.5로 변화 시켰다. 무전해 니켈 도금 후 Ni-P 표면 관찰 결과, 도금액의 pH가 낮아질수록 Ni-P 층 nodule 표면에 핀홀이 증가하였다. 솔더링 후 접합부 계면에서는 (Cu,Ni)6Sn5 금속간화합물이 형성되었으며, 무전해 니켈 도금액의 pH가 증가할수록 솔더접합부의 계면 금속간화합물의 두께는 증가하였다. 고속전단 시험을 통하여 ENIG/SAC305 솔더 접합부의 취성파괴 거동을 확인하였으며, 무전해 니켈 도금액의 pH가 증가할수록 솔더접합부의 전단강도는 감소하는 경향을 보였다. 또한, 솔더 접합부의 취성 파괴율은 pH가 5일 때 가장 높은 값을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.252-255
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• 2004

반도체는 high integrated, high speed, low power를 위하여 design 뿐만 아니라 재료 측면에서도 많은 변화를 가져오고 있으며, RC delay time을 줄이기 위하여 Al 배선보다 비저항이 낮은 Cu와 low-k material 적용이 그 대표적인 예이다. 그러나, Cu 배선의 경우 dry etching이 어려우므로, 기존의 공정으로는 그 한계를 가지므로 damascene 또는 dual damascene 공정이 소개, 적용되고 있다. Damascene 공정은 절연막에 photo와 RIE 공정을 이용하여 trench를 형성시킨 후 electrochemical plating 공정을 이용하여 trench에 Cu를 filling 시킨다. 이후 CMP 공정을 이용하여 절연막 위의 Cu와 barrier material을 제거함으로서 Cu 배선을 형성하게 된다. Dual damascene 공정은 trench와 via를 동시에 형성시키는 기술로 현재 대부분의 Cu 배선 공정에 적용되고 있다. Cu CMP는 기존의 metal CMP와 마찬가지로 oxidizer를 이용한 Cu film의 화학반응과 연마 입자의 기계가공이 기본 메커니즘이다. Cu CMP에서 backside pressure 영향이 uniformity에 미치는 영향을 살펴보았으며, electrochemical plating 공정에서 발생하는 hump가 CMP 결과에 미치는 영향과 dishing 결과를 통하여 그 영향을 평가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.444-445
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• 2009

The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on $0.2\sim0.6\;{\Omega}{\cdot}cm$, $20\;\times\;20\;mm^2$, CZ(Czochralski) wafer.