• 마이크로전자및패키징학회지
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• 제24권3호
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• pp.57-62
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• 2017

하이드로퀴논 환원제를 사용하는 무전해 은도금 방법으로 은(Ag)코팅 구리(Cu) 플레이크를 제조하는 공정에서 전처리 용액, 반응온도, pH, Ag 도금액 조성 및 주입속도, 펄프농도 등 여러 변수를 변화시켜가며 우수한 품질의 Ag 코팅이 형성되는 공정조건들을 확보하였다. Cu 플레이크 표면의 산화층을 제거하기 위한 효과적인 전처리 용액이 제시되었고, 낮은 반응온도, 4.34 수준의 pH값, 느린 Ag 도금액 주입속도, Ag 도금액에서 증류수 제거, 높은 펄프농도 조건에서 분리형 미세 Ag 입자들의 생성이 억제되고, Cu 표면 커버리지가 우수한 Ag 코팅층이 형성됨을 확인할 수 있었다.

• 한국표면공학회지
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• 제38권6호
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• pp.216-226
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• 2005

Pb-Free Technology was born with environmental problems of electronic component, Being connected by big and small project of every country. Also, in each country environment is connected and various standards of IEC, ISO, MIL, JIS, KS, JEDEC, EIAJ etc. All products can divide at solder part and finishing part These can tested each and synthetically divide. This research is reliability evaluation for three kind of ph-free SnCu solder plating solution and it's deposit. First, executed analysis about Pure Sn, SnCu solutions and plating surface by way similar to other plating solution analysis. Next, executed reliability about test method and equipment for reliable analyzer system construction. Next, data comparison and estimation, main estimation test method and item's choice. In this paper the systematic surface analysis and reliability for plating solutions and it's deposit in metal surface finishing processes could be shown.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 추계학술발표대회 논문집
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• pp.350-355
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• 2009

The crysralline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more high efficiency and low cost endeavors many crystalline solar cells. The fabricaion process of high efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/AG contact, This metal contacts have only been used in limited areas in spite of their good srability and low contact resistance because of expensive materials and process. Commercial solar cells with screen-printed solar cells formed by using Ag paste suffer from loe fill factor and high contact resistance and low aspect ratio. Ni and Cu metal contacts have been formed by using electroless plating and light-induced electro plating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on 0.2~0.6${\Omega}$ cm, $20{\times}20mm^2$, CZ(Czochralski) wafer.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 추계기술심포지움논문집
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• pp.49-53
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• 2002

The Sn-Cu eutectic solder bump formation ($140{\mu}{\textrm}{m}$ diameter, $250{\mu}{\textrm}{m}$ pitch) by electroplating was studied for flip chip package fabrication. The effect of current density and plating time on Sn-Cu deposit was investigated. The morphology and composition of plated solder surface was examined by scanning electron microscopy. The plating thickness increased with increasing time. The plating rate increased generally according to current density. After the characteristics of Sn-Cu plating were investigated, Sn-Cu solder bumps were fabricated on optimal condition of 5A/dm$^2$, 2hrs. Ball shear test after reflow was performed to measure adhesion strength between solder bump and UBM (Under Bump Metallization). The shear strength of Sn-Cu bump after reflow was higher than that of before reflow.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.481-486
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• 2002

We have investigated the effects of plating materials for Cu lead (Sn-lOPb, AwPdJNi, Sn-3.5Ag, Sn-3Bi and Sn-0.7Cu) on properties of QFP joints using a Sn-8Zn-3Bi solder. The results were compared with the joints using Sn-3. 5Ag-0. 7Cu and Sn-37Pb solders. As a result, the joints with the Sn-3.5Ag, Sn-3Bi and Sn-0.7Cu plated Cu lead had the reliability comparable to those of the Sn-3.5Ag-0.7Cu and Sn-37Pb soldered joints with respect to the joint strength after the high temperature holding tests at 348K to 423k. In particular, the joint with the Sn-3.5Ag plated Cu lead had the best reliability. This is caused by the low growth rate of a Cu-Sn interfacial reaction layer that degrades the joint strength of the soldered joints. Consequently, the Sn-3.5Ag plating was found to be most feasible plating for the Sn-8Zn-3Bi soldered joint.

• 자원리싸이클링
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• 제14권4호
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• pp.34-40
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• 2005

무전해 Co-Cu-P 폐 도금액의 재사용에 대해 소정의 조건에서 조사하였다. 아연화처리한 후 코발트 촉매의 처리는 코발트 촉매 처리를 하지 않았을 때 보다 도금시간이 연장되었다. Batch type에서 새로 제조한 도금액에 폐 도금액을 $50\%$ 첨가하여도 무전해 Co-Cu-P폐 도금액의 재사용이 가능하였다. 새로 제조한 도금액에 소모된 도금액의 성분을 연속적으로 보충하여 도금하면(Continuous 쇼pe), 보충하지 않았을 경우(Batch type) 보다 도금시간이 7.5배 연장되었다. 새로 제조한 도금액에 폐 도금액 $50\%$를 첨가하여 소모된 도금액의 성분을 연속적으로 보충할 경우(Continuous type)의 도금시간은 보충하지 않았을 경우(Batch type)의 도금시간 보다 2.5배 연장되었다. 도금층의 불량과 급격한 도금속도의 감소는 도금층의 Co와 Cu의 성분 변화에 큰 영향을 미쳤다.

• 한국재료학회지
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• 제23권11호
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• pp.661-665
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• 2013

We investigated the characteristics of electroless plated Cu films on screen printed Ag/Anodized Al substrate. Cu plating was attempted using neutral electroless plating processes to minimize damage of the anodized Al substrate; this method used sodium hypophosphite instead of formaldehyde as a reducing agent. The basic electroless solution consisted of $CuSO_4{\cdot}5H_2O$ as the main metal source, $NaH_2PO_2{\cdot}H_2O$ as the reducing agent, $C_6H_5Na_3O_7{\cdot}2H_2O$ and $NH_4Cl$ as the complex agents, and $NiSO_4{\cdot}6H_2O$ as the catalyser for the oxidation of the reducing agent, dissolved in deionized water. The pH of the Cu plating solutions was adjusted using $NH_4OH$. According to the variation of pH in the range of 6.5~8, the electroless plated Cu films were coated on screen printed Ag pattern/anodized Al/Al at $70^{\circ}C$. We investigated the surface morphology change of the Cu films using FE-SEM (Field Emission Scanning Electron Microscopy). The chemical composition of the Cu film was determined using XPS (X-ray Photoelectron Spectroscopy). The crystal structures of the Cu films were investigated using XRD (X-ray Diffraction). Using electroless plating at pH 7, the structures of the plated Cu-rich films were typical fcc-Cu; however, a slight Ni component was co-deposited. Finally, we found that the formation of Cu film plated selectively on PCB without any lithography is possible using a neutral electroless plating process.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.328-332
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• 2011

The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surface. One of the front metal contacts is Ni/Cu plating that it is available to simply and inexpensive production to apply mass production. Ni is shown to be a suitable barrier to Cu diffusion into the silicon. The process of Ni electroless plating on front silicon surface is performed using a chemical bath. Additives and buffer agents such as ammonium chloride is added to maintain the stability and pH control of the bath. Ni deposition rate is found to vary with temperature, time, utilization of bath. The experimental result shown that Ni layer by SEM (scanning electron microscopy) and EDX analysis. Finally, plated Ni/Cu contact solar cell result in an efficiency of 17.69% on $2{\times}2\;cm^2$, Cz wafer.

• 한국표면공학회지
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• 제50권4호
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• pp.244-250
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• 2017

Effects of plating conditions (dispersant concentration, plating time, and ultrasonication) on electroless Cu plating on SiC fabric woven by crossing of SiC continuous fibers vertically were studied. The ultrasonic dispersion treatment not only did not improve the dispersion of the SiC fibers, but also did not change the plating thickness. The ultrasonication in the pretreatment step of electroless plating did not improve the dispersion of the fibers, while the ultrasonication in the plating step enhanced the dispersion of the fibers and decreased the thickness of the Cu films. It was possible to control the thickness of the Cu coating layer as well as the dispersion of the fibers in the fabric by changing the plating conditions such as dispersant concentration, plating time, and ultrasonication, but it was very difficult to coat copper on the intersection of vertical fibers in the fabric.

• 한국재료학회지
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• 제22권7호
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• pp.374-378
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• 2012

In an effort to overcome the problems which arise when fabricating high-aspect-ratio TSV(through silicon via), we performed experiments involving the void-free Cu filling of a TSV(10~20 ${\mu}m$ in diameter with an aspect ratio of 5~7) by controlling the plating DC current density and the additive SPS concentration. Initially, the copper deposit growth mode in and around the trench and the TSV was estimated by the change in the plating DC current density. According to the variation of the plating current density, the deposition rate during Cu electroplating differed at the top and the bottom of the trench. Specifically, at a current density 2.5 mA/$cm^2$, the deposition rate in the corner of the trench was lower than that at the top and on the bottom sides. From this result, we confirmed that a plating current density 2.5 mA/$cm^2$ is very useful for void-free Cu filling of a TSV. In order to reduce the plating time, we attempted TSV Cu filling by controlling the accelerator SPS concentration at a plating current density of 2.5 mA/$cm^2$. A TSV with a diameter 10 ${\mu}m$ and an aspect ratio of 7 was filled completely with Cu plating material in 90 min at a current density 2.5 mA/$cm^2$ with an addition of SPS at 50 mg/L. Finally, we found that TSV can be filled rapidly with plated Cu without voids by controlling the SPS concentration at the optimized plating current density.