• Korean Journal of Materials Research
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• v.13 no.2
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• pp.101-105
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• 2003

In this study, we have investigated the availability of the electroless Ni-B plating for a diffusion barrier of the bus electrode. The Ni-B layer of 1$\beta$: thick was electroless deposited on the electroplated Cu bus electrode for AC plasma display. The layer was to encapsulate Cu bus electrode to prevent from its oxidation and to serve as a diffusion barrier against Cu contamination of the transparent dielectric layer in AC plasma display. The microstructure of the as-plated barrier layer was made of an amorphous phase and the structure was converted to crystalline at about 30$0^{\circ}C$. The concentration of boron was about 5∼6 wt.% in the electroless Ni-B deposit regardless of DMAB concentration. The electroless Ni-B deposit was coated on the surface of the electroplated Cu bus electrode uniformly. And the electroless Ni-B plating was found to be an appropriate process to form the diffusion barrier.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.4
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• pp.225-230
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• 2004

An electromagnetic actuator has been designed and fabricated for Probe-based data storage applications. The actuator consists of permanent magnets(SmCo) housing and a media Platform which is connected to the Si frame by four couples of Si leaf springs. In order to generate electromagnetic force, Cu coils were electroplated under the media platform. The magnetic field distribution was calculated with 3D Finite Element Method of Maxwell 3D program. The field strength felt by Cu coils was estimated to be about 0.33T when the distance between the media platform and permanent magnets is $200\mu\textrm{m}$. The static and dynamic motions of the actuator were analyzed by FEM method with ANSYS 5.3. The measured displacements of the actuator were about $\pm$$92\mu\textrm{m}$ for input current of $\pm$40㎃ and the resonance frequency was 100Hz. The proposed electromagnetic actuator can be utilized for media driver of probe-based data storage system.

• Korean Journal of Metals and Materials
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• v.49 no.5
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• pp.411-418
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• 2011

The current study investigates the electroplating characteristics of Sn-Cu eutectic micro-bumps electroplated on a Si chip for flip chip application. Under bump metallization (UBM) layers consisting of Cr, Cu, Ni and Au sequentially from bottom to top with the aim of achieving Sn-Cu bumps $10\times10\times6$ ${\mu}m$ in size, with 20${\mu}m$ pitch. In order to determine optimal plating parameters, the polarization curve, current density and plating time were analyzed. Experimental results showed the equilibrium potential from the Sn-Cu polarization curve is -0.465 V, which is attained when Sn-Cu electro-deposition occurred. The thickness of the electroplated bumps increased with rising current density and plating time up to 20 mA/$cm^2$ and 30 min respectively. The near eutectic composition of the Sn-0.72wt%Cu bump was obtained by plating at 10 mA/$cm^2$ for 20 min, and the bump size at these conditions was $10\times10\times6$ ${\mu}m$. The shear strength of the eutectic Sn-Cu bump was 9.0 gf when the shearing tip height was 50% of the bump height.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.139-140
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• 2002

This paper discusses the effect of plating condition on the mechanical property of electroplated Cu film. Current density, the amount of the organic additives was found to affect the residual stress of electroplated copper film. The result show that, in the case of residual stress, the copper film deposited at higher additive result in lower residual stress and plating current by $15mA/cm^2$ induced a better result than any other ones.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.9
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• pp.488-493
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• 2004

In this paper, we present the fabrication of copper electrode array and test of electrochemical discharge machining(ECDM) for glass machining. An array of 72 Cu electrodes is used to machine Borofloat33 glass. The height and diameter of a Cu electrode are 400 $\mu\textrm{m}$ and 100 $\mu\textrm{m}$ respectively. It is fabricated by ICP-RIE, Au-Au thermo-compression bonding, and copper electroplating. Borofloat33 glass is machined by the fabricated copper electrode array in 60 seconds at 55 V. The surface roughness of the machined glass is measured and the machined glass is anodically bonded with silicon.

• Journal of the Korean institute of surface engineering
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• v.46 no.4
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• pp.158-161
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• 2013

Recently, the weight reduction and miniaturization of the electronics have placed great emphasis. The miniaturization of PCB (Printed Circuit Board) as main component among the electronic components has also become progressed. The use of acid copper plating process for Via-Filling effectively forms interlayer connection in build-up PCBs with high-density interconnections. However, in the case of copper-via filled in a bath, which is greatly dependent on the effects of additives. This paper discusses effects of Cl ion on the filling of PCB vias with electrodeposited copper based on both electrochemical experiment and practical observation of cross sections of vias.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.874-878
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• 2001

Solder bump was electroplated on wafer for flip chip application. The process is as follows. Ti/Cu were sputtered and thick PR was formed by several coating PR layer. Fine pitch vias were opened using via mask and then Cu stud and solder bump were electroplated. Finally solder bump was formed by reflow process. In this paper, we opened 40㎛ vias on 57㎛ thick PR layer and electroplated solder bump with 70㎛ height and 40㎛ diameter. After reflow process, we could form solder bump with 53㎛ height and 43㎛ diameter. In plating process, we improved the plating uniformity within 3% by using ring contact instead of conventional multi-point contact.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.4-4
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• 2003

Various Cu films were fabricated using sputtering and electroplating with and without additive, and their surface damages after annealing were investigated. After annealing at 43SoC, the difference between damage morphologies of the films was observed. In some films stress-induced grooves along the grain boundaries were observed, while in the others voids at the grain boundary triple junctions were observed. It was also observed that the stress-induced groove was formed along the high energy grain boundaries. It was found out that the difference of the morphologies of surface damages in Cu films depends on not process type but grain boundary characteristics. To explain the morphological difference of surface damages, a simple parameter considering the contributions of grain structures and grain boundary characteristics to surface and grain boundary diffusions is suggested. The effective grain boundary area, which is a function of grain size, film thickness and the fraction of high energy grain boundaries, played a key role in the morphological difference.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.29-36
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• 2008

In this paper, mechanical reliability issues of copper through-wafer interconnections are investigated numerically and experimentally. A hermetic wafer level packaging for MEMS devices is developed. Au-Sn eutectic bonding technology is used to achieve hermetic sealing, and the vertical through-hole via filled with electroplated copper for the electrical connection is also used. The MEMS package has the size of $1mm{\times}1mm{\times}700{\mu}m$. The robustness of the package is confirmed by several reliability tests. Several factors which could induce via hole cracking failure are investigated such as thermal expansion mismatch, via etch profile, and copper diffusion phenomenon. Alternative electroplating process is suggested for preventing Cu diffusion and increasing the adhesion performance of the electroplating process. After implementing several improvements, reliability tests were performed, and via hole cracking as well as significant changes in the shear strength were not observed. Helium leak testing indicated that the leak rate of the package meets the requirements of MIL-STD-883F specification.

• Journal of the Korean Electrochemical Society
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• v.4 no.4
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• pp.160-165
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• 2001

The eletrochemical charateristics of mercapto compound additives on the copper electroplating for semi conductor metalization were investigated. Mercapto compounds including sulfur atom is known that they activate deposition rate in eletroplating. Four different types of mercapto compounds were chosen with different concentration and both the characteristics of plating and throwing power were investigated by electrochemical experiments such as Hull cell test, Haring-Blum cell, cathodic polarization, EQCM(Electrochemical Quartz Crystal Microbalance). 3-Mercapto-1-propanesulfonic acid among 4 different mercapto compounds was regarded as the most proper activator with the results of the mass change of Cu metal deposited on eletrode by cathodic polarization and EQCM. The overpotential was more shifted to 100 mV in the concentration of 20 ppm than the solution with only $Cl^-$ in cathodic scan.