• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 춘계학술발표대회 논문집
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• pp.225-229
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• 2009

The front metal contact is one of the most important element influences in efficiency in the silicon solar cell. First of all selective of the material and formation method is important in metal contacts. Commercial solar cells with screen-printed contacts formed by using Ag paste process is simple relatively and mass production is easy. But it suffer from a low fill factor and a high shading loss because of high contact resistance. Besides Ag paste too expensive. because of depends income. This paper applied for Ni/Cu metallization replace for paste of screen printing front metal contact. Low cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the screen-printed Ag contacts. Ni has been proposed as a suitable silicide for the salicidation process and is expected to replace conventional silicides. Copper is a promising material for the electrical contacts in solar cells in terms of conductivity and cost. In experiments Ni/Cu metal contact applied same grid formation of screen-printed solar cell. And it has variation of different grid spacing. It was verified that the wide spacing of grid finger could increase the series resistance also the narrow spacing of grid finger also implies a grid with a higher density of grid fingers. Through different grid spacing found alteration of efficiency.

• 한국재료학회지
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• 제9권3호
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• pp.288-294
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• 1999

솔더 범프를 사용하는 플립 칩 접속기술에서 범프와 칩 사이에 위치하는 금속 충들의 조합을 UBM(Under Bump Metallurgy)라고 부르며 이 UBM을 어떤 조합으로 사용하는 가에 따라 접속의 안정성이 크게 좌우된다. 본 연구에서는 UBM중에서 솔더 접착 층으로 사용되는 구리 층의 두께를 $1\mu\textrm{m}와 5\mu\textrm{m}$로 하는 한편 barrier 층으로 사용되는 금속 층을 Ti, Ni, Pd으로 변화시키면서 이들 UBM과 공정 납-주석 사이의 계면반응을 살펴보았다. 이를 위해 $100\mu\textrm{m}$ 크기의 솔더 범프를 전해도금법을 사용하여 제작하고 리플로 횟수와 시효시간에 따른 각 UBM에서의 금속간 화합물의 성장을 관찰하였다. $Cu_6Sn_5 \eta'$-상 금속간 화합물이 모든 조건에서 형성되었고 Cu층의 두께가 $5\mu\textrm{m}$로 두꺼운 경우에는 $Cu_3Sn \varepsilon$-상도 관찰되었다. Pd을 사용한 UBM 구조에서는 시효 처리시에 $Cu_6Sn_5$ 상 아래쪽에 $PdSn_4$상이 형성되었다. 또한 이들 계면에서의 금속간 화합물의 성장은 솔더 범프의 접속강도 값과 밀접한 관계를 가진다.

• 마이크로전자및패키징학회지
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• 제22권2호
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• pp.55-59
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• 2015

Novel low-volume solder-on-pad (SoP) process is proposed for a fine pitch Cu pillar bump interconnection. A novel solder bumping material (SBM) has been developed for the $60{\mu}m$ pitch SoP using screen printing process. SBM, which is composed of ternary Sn-3.0Ag-0.5Cu (SAC305) solder powder and a polymer resin, is a paste material to perform a fine-pitch SoP in place of the electroplating process. By optimizing the volumetric ratio of the resin, deoxidizing agent, and SAC305 solder powder; the oxide layers on the solder powder and Cu pads are successfully removed during the bumping process without additional treatment or equipment. The Si chip and substrate with daisy-chain pattern are fabricated to develop the fine pitch SoP process and evaluate the fine-pitch interconnection. The fabricated Si substrate has 6724 under bump metallization (UBM) with a $45{\mu}m$ diameter and $60{\mu}m$ pitch. The Si chip with Cu pillar bump is flip chip bonded with the SoP formed substrate using an underfill material with fluxing features. Using the fluxing underfill material is advantageous since it eliminates the flux cleaning process and capillary flow process of underfill. The optimized interconnection process has been validated by the electrical characterization of the daisy-chain pattern. This work is the first report on a successful operation of a fine-pitch SoP and micro bump interconnection using a screen printing process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.259-259
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• 2008

The LTCC (Low Temperature Co-fired Ceramic) technology meets the requirements for high quality microelectronic devices and microsystems application due to a very good electrical and mechanical properties, high reliability and stability as well as possibility of making integrated three dimensional microstructures. The wet process, which has been applied to the etching of the metallic thin film on the ceramic substrate, has multi process steps such as lithography and development and uses very toxic chemicals arising the environmental problems. The other side, Plasma technology like ion beam sputtering is clean process including surface cleaning and treatment, sputtering and etching of semiconductor devices, and environmental cleanup. In this study, metallic multilayer pattern was fabricated by the ion beam etching of Ti/Pd/Cu without the lithography. In the experiment, Alumina and LTCC were used as the substrate and Ti/Pd/Cu metallic multilayer was deposited by the DC-magnetron sputtering system. After the formation of Cu/Ni/Au multilayer pattern made by the photolithography and electroplating process, the Ti/Pd/Cu multilayer was dry-etched by using the low energy-high current ion-beam etching process. Because the electroplated Au layer was the masking barrier of the etching of Ti/Pd/Cu multilayer, the additional lithography was not necessary for the etching process. Xenon ion beam which having the high sputtering yield was irradiated and was used with various ion energy and current. The metallic pattern after the etching was optically examined and analyzed. The rate and phenomenon of the etching on each metallic layer were investigated with the diverse process condition such as ion-beam acceleration energy, current density, and etching time.

• 마이크로전자및패키징학회지
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• 제15권4호
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• pp.1-7
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• 2008

본 실험에서는 두가지 리플로 시스템에 따라 솔더 범프 내에 생성되는 금속간 화합물의 성장거동에 대하여 연구하였다. 산화막이 증착된 Si 기판 위에 직류 마그네트론 스퍼터링을 이용하여 Ti(50 nm), Cu($1{\mu}m$), Au(50 nm), Ti(50 nm)의 박막을 형성한 후, 전해 도금을 이용하여 $5{\mu}m$두께의 Cu 범프와 $20{\mu}m$ 두께의 Sn 범프를 형성하였다. 급속열처리장치(RTA)와 일반 리플로를 이용하여 전해 도금으로 형성된 Sn($20{\mu}m$)/Cu($5{\mu}m$) 범프를 동일한 온도에서 각각 리플로 공정을 진행한 결과, 급속열처리장치를 이용하여 리플로를 할 때, 플럭스를 사용하지 않고 범프로 형성할 수 있었으며, 솔더 계면에 형성된 금속간 화합물이 일반 리플로의 경우보다 더 얇게 형성되었다.

• 한국재료학회지
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• 제23권12호
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• pp.695-701
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• 2013

To understand how reactivity between reinforcing nanoparticles and aqueous solution affects electrodeposited Cu thin films, two types of commercialized cerium oxide (ceria, $CeO_2$) nanoparticles were used with copper sulfate electrolyte to form in-situ nanocomposite films. During this process, we observed variation in colors and pH of the electrolyte depending on the manufacturer. Ceria aqueous solution and nickel sulfate ($NiSO_4$) aqueous solutions were also used for comparison. We checked several parameters which could be key factors contributing to the changes, such as the oxidation number of Cu, chemical impurities of ceria nanoparticles, and so on. Oxidation number was checked by salt formation by chemical reaction between $CuSO_4$ solution and sodium hydroxide (NaOH) solution. We observed that the color changed when $H_2SO_4$ was added to the $CuSO_4$ solution. The same effect was obtained when $H_2SO_4$ was mixed with ceria solution; the color of ceria solution changed from white to yellow. However, the color of $NiSO_4$ solution did not show any significant changes. We did observe slight changes in the pH of the solutions in this study. We did not obtain firm evidence to explain the changes observed in this study, but changes in the color of the electrolyte might be caused by interaction of Cu ion and the by-product of ceria. The mechanical properties of the films were examined by nanoindentation, and reaction between ceria and electrolyte presumably affect the mechanical properties of electrodeposited copper films. We also examined their crystal structures and optical properties by X-ray diffraction (XRD) and UV-Vis spectroscopy.

• 한국자기학회지
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• 제24권6호
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• pp.186-190
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• 2014

뫼스바우어 선원 $^{57}Co/Cu$의 제조조건을 도출하기 위하여, 금속 분말 코발트(Co)를 황산에 용해시킨 후 $H_3BO_3$, KOH와 NaCl을 첨가하여 Sulfamate 도금용액을 제조 후 Cu plate 기판에 도금하였다. 도금두께는 $4{\mu}m$로 일정하게 유지하였다. 전류밀도를 $2mA/cm^2$와 $30mA/cm^2$로 유지하면서 pH에 변화를 준 결과 pH가 4 이상으로 증가하면 hcp 결정의 Co 금속 이외의 2차상이 생성되었다. pH가 증가할수록 Co 후막 표면이 거칠어 졌으며 균열된 표면형상을 관찰하였다. pH가 5까지 증가할 경우 평균입도는 54 nmfh 증가함을 확인하였다. 열처리조건을 변화시키면서 Co가 Cu기지 내에 구속되는 온도가 $900^{\circ}C$에서 2 h임을 확인하였다. 열처리는 진공 후 Ar 분위기(1.5 l/min)를 유지하면서 수행하였다.

• 한국표면공학회지
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• 제54권1호
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• pp.1-11
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• 2021

Porous dendrite structure AuCu alloy was formed using a hydrogen bubble template (HBT) technique by electroplating to improve the catalytic performance of gold, known as an excellent oxygen reduction reaction (ORR) catalyst in alkaline medium. The rich Au surface was maximized by selectively electrochemical etching Cu on the AuCu dendrite surface well formed in a leaf shape. The catalytic activity is mainly due to the synergistic effect of Au and Cu existing on the surface and inside of the particle. Au helps desorption of OH- and Cu contributes to the activation of O2 molecule. Therefore, the porous AuCu dendrite alloy catalyst showed markedly improved catalytic activity compared to the monometallic system. The porous structure AuCu formed by the hydrogen bubble template was able to control the size of the pores according to the formation time and applied current. In addition, the Au-rich surface area increased by selectively removing Cu through electrochemical etching was measured using an electrochemical calculation method (ECSA). The results of this study suggest that the alloying of porous AuCu dendrites and selective Cu dissolution treatment induces an internal alloying effect and a large specific surface area to improve catalyst performance.

• 마이크로전자및패키징학회지
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• 제21권4호
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• pp.91-96
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• 2014

TSV기술은 실리콘 칩에 관통 홀(through silicon via)을 형성하고, 비아 내부에 전도성 금속으로 채워 수직으로 쌓아 올려 칩의 집적도를 향상시키는 3차원 패키징 기술로서, 와이어 본딩(wire bonding)방식으로 접속하는 기존의 방식에 비해 배선의 거리를 크게 단축시킬 수 있다. 이를 통해 빠른 처리 속도, 낮은 소비전력, 높은 소자밀도를 얻을 수 있다. 본 연구에서는 웨이퍼 레벨에서의 TSV 충전 경향을 조사하기 위하여, 실리콘의 칩 레벨에서부터 4" 웨이퍼까지 전해 도금법을 이용하여 Cu를 충전하였다. Cu 충전을 위한 도금액은 CuSO4 5H2O, H2SO4 와 소량의 첨가제로 구성하였다. 양극은 Pt를 사용하였으며, 음극은 $0.5{\times}0.5 cm^2{\sim}5{\times}5cm^2$ 실리콘 칩과 4" 실리콘 wafer를 사용하였다. 실험 결과, $0.5{\times}0.5cm^2$ 실리콘 칩을 이용하여 양극과 음극과의 거리에 따라 충전률을 비교하여 전극간 거리가 4 cm일 때 충전률이 가장 양호하였다. $5{\times}5cm^2$ 실리콘 칩의 경우, 전류 공급위치로부터 0~0.5 cm 거리에 위치한 TSV의 경우 100%의 Cu충전률을 보였고, 4.5~5 cm 거리에 위치한 TSV의 경우 충전률이 약 95%로 비아의 입구 부분이 완전히 충전되지 않는 경향을 보였다. 전극에서 멀리 떨어져있는 TSV에서 Cu 충전률이 감소하였으며, 안정된 충전을 위하여 전류를 인가하는 시간을 2 hrs에서 2.5 hrs로 증가시켜 4" 웨이퍼에서 양호한 TSV 충전을 할 수 있었다.

• 공업화학
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• 제23권3호
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• pp.313-319
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• 2012

본 연구에서는 Polyacrylonitrile (PAN)계 탄소섬유 표면에 구리도금 표면처리가 탄소섬유 강화 복합재료의 기계적 계면 특성에 미치는 영향에 관하여 관찰하였다. 탄소섬유 표면특성은 주사전자현미경, X-선 광전자 분광법, X-선 회절분석기, 접촉각 측정기로 측정하였고, 탄소섬유 강화 복합재료의 기계적 계면 물성은 층간전단강도(interlaminar shear strength, ILSS)와 파괴인성(critical stress intensity factor, $K_{IC}$)측정을 통하여 알아보았다. 실험결과로부터, 기계적 계면물성은 탄소섬유 표면에 COOH group과 도금된 구리함량이 증가됨에 따라 순차적으로 증가되는 것이 확인되었으나, 도금시간을 길게 하여 과량의 구리가 도입되었을 경우 기계적 계면 물성을 도리어 감소시키는 것으로 확인되었다. 결론적으로 구리함량이 탄소섬유 복합재료의 기계적 계면물성을 결정하는 중요 요소라 판단되나, 최적의 함량이상에서는 계면분리에 의한 물성저하의 원인이 될 수 있다.