• 한국표면공학회지
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• 제27권3호
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• pp.158-165
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• 1994

Cu-Cr alloy thin film requires good quality of etching be used for TAB technology. The etched cross sec-tion was clean enough when the etching was performed in 0.1M $FeCl_3$ solution at $50^{\circ}C$. The etching rate was increased with the amount of $KMnO_4$. For enhanced profile of cross section and rate, the spray etchning was found to be superior compared to the immersion etching. A series of experiments were performed to improve the uniformity of the current distribution in electrodeposition onto the substrate with lithographic patterns. Copper was electrodeposited from quiescent-solution, paddle-agitated-solution, and air-bubbled-solution to in-vestigate the effect of the fluid flow. The thickness profile of the specimen measured by profilmetry has the non uniformity at feature scale in quiescent-solution, because of the longitudinal vortex roll caused by the natural convection. However, uniform thickness profile was achieved in paddle-agitated or air bubbled solu-tion.

• 대한금속재료학회지
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• 제47권11호
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• pp.740-747
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• 2009

The purpose of this study is to identify the effect of electrolyte compositions on electrodeposited copper foil. First of all, the polyimide substrate was pretreated with plasma. Finally, copper foil was deposited on a Cu/Ni/Polyimide substrate using the electroplating technique. As the quantity of Cu increased, preferred orientations changed into (111). Increasing sulfuric acid, on the other hand, brought down the preferred orientation of (111). The lowest sheet resistance, surface roughness, and fine adhesion were detected when the ratio of $Cu^{2+}$ and $H_2SO_4$ is 50:50(g/l).

• 한국자기학회지
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• 제24권6호
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• pp.186-190
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• 2014

뫼스바우어 선원 $^{57}Co/Cu$의 제조조건을 도출하기 위하여, 금속 분말 코발트(Co)를 황산에 용해시킨 후 $H_3BO_3$, KOH와 NaCl을 첨가하여 Sulfamate 도금용액을 제조 후 Cu plate 기판에 도금하였다. 도금두께는 $4{\mu}m$로 일정하게 유지하였다. 전류밀도를 $2mA/cm^2$와 $30mA/cm^2$로 유지하면서 pH에 변화를 준 결과 pH가 4 이상으로 증가하면 hcp 결정의 Co 금속 이외의 2차상이 생성되었다. pH가 증가할수록 Co 후막 표면이 거칠어 졌으며 균열된 표면형상을 관찰하였다. pH가 5까지 증가할 경우 평균입도는 54 nmfh 증가함을 확인하였다. 열처리조건을 변화시키면서 Co가 Cu기지 내에 구속되는 온도가 $900^{\circ}C$에서 2 h임을 확인하였다. 열처리는 진공 후 Ar 분위기(1.5 l/min)를 유지하면서 수행하였다.

• 대한방사성의약품학회지
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• 제2권2호
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• pp.84-95
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• 2016

Considerably increasing interest in using the theranostic isotopes/ isotope pairs of radiometals like $^{44/47}Sc$ and $^{64/67}Cu$ for diagnosis and/or therapeutic applications in the nuclear medicine procedures necessitates its reliable production and supply. Separation and purification of no-carrier-added (NCA) isotopes from macro quantitates of the irradiated target matrix along with other impurities is a cardinal procedure amongst several other steps involved in its production. Multitudinous methods including but not limited to liquid-liquid (solvent) extraction, extraction chromatography (EXC), ion exchange, electrodeposition and sublimation are routinely applied either solitarily or in combination for the separation and purification of radioisotopes depending on their production routes, radioisotope of interest and impurities involved. However, application of EXC though has shown promises towards the numerous separation techniques have not received much attention as far as its application prospects in the field of nuclear medicine are concerned. Advances in the recent past for application of the EXC resins in separation and purification of the several medically important radioisotopes at ultra-high purity have shown promising behavior with respect to their operation simplicity, acidic and radiolytic stability, separation efficiencies and speedy procedures with the enhanced and excellent extraction abilities. In this mini review we will be talking about the recent developments in the application and the use of EXC techniques for the separation and purification of $^{44/47}Sc$ and $^{64/67}Cu$ for medical applications. Furthermore, we will also discuss the scientific and practical aspects of EXC in the view of separation of the NCA trace amount of radionuclides.

• 한국재료학회지
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• 제13권3호
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• pp.174-179
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• 2003

Thin copper films were grown by electrodeposition on copper seed layers which were grown by sputtering of an ultra-pure copper target on tantalum nitride-coated silicon wafers and subsequently, cleaned in ECR plasma. The copper films were then subjected to ⅰ) vacuum annealing, ⅱ) rapid thermal annealing (RTA) and ⅲ) rapid thermal nitriding (RTN) at various temperatures over different periods of time. XRD, SEM, AFM and resistivity measurements were done to ascertain the optimum heat treatment condition for obtaining film with minimum resistivity, predominantly (111)-oriented and smoother surface morphology. The as-deposited film has a resistivity of ∼6.3 $\mu$$\Omega$-cm and a relatively small intensity ratio of (111) and (200) peaks. With heat treatment, the resistivity decreases and the (111) peak becomes dominant, along with improved smoothness of the copper film. The optimum condition (with a resistivity of 1.98 $\mu$$\Omega$-cm) is suggested as the rapid thermal nitriding at 400oC for 120 sec.

• 한국표면공학회지
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• 제18권3호
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• pp.105-115
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• 1985

Lead-tin-copper ternary alloy electrodeposition is conducted onto the inner bore surface of plain bearings as an overlay in order to investigate the effect of slot width, current density and fluoboric acid concentration on the uniformity of overlay. The thickness of overlay is analyzed by means of current distribution resulting from the overvoltage of plating bath and the apparent distance between cathode and anode. The result demonstrate that the uniformity of overlay is remarkably dependent of the slot size and current density, but has little bearing on the fluoboric acid concentration over 100g/L. This present study indicates that uniform overlay is obtainable within the tolerable thickness of ${\pm}2{\mu}m$ by using the slot width of 22mm. The surface morphology examination also shows the important role of concentration polarization of the micro-uniformity of overlay. The micro-uniformity has improved at the low concentration polarization which resulted from operating at the low current density and high fluoboric acid concentration. The surface morphology of deposits exhibits the vivid pyramid crystalline in the plating condition of low concentration polarizatio and all deposits have columnar structure parallel to the applied electric field regardless of the electroplating condition used.

• 한국재료학회지
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• 제20권12호
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• pp.661-668
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• 2010

Cu(In,Ga)$Se_2$(CIGS) photovoltaic thin films were electrodeposited on Mo/glass substrates with an aqueous solution containing 2 mM $CuCl_2$, 8 mM $InCl_3$, 20 mM $GaCl_3$ and 8mM $H_2SeO_3$ at the electrodeposition potential of -0.6 to -1.0 V(SCE) and pH of 1.8. The best chemical composition of $Cu_{1.05}In_{0.8}Ga_{0.13}Se_2$ was found to be achieved at -0.7 V(SCE). The precursor Cu-In-Ga-Se films were annealed for crystallization to chalcopyrite structure at temperatures of 100-$500^{\circ}C$ under Ar gas atmosphere. The chemical compositions, microstructures, surface morphologies, and crystallographic structures of the annealed films were analyzed by EPMA, FE-SEM, AFM, and XRD, respectively. The precursor Cu-In-Ga-Se grains were grown sparsely on the Mo-back contact and also had very rough surfaces. However, after annealing treatment beginning at $200^{\circ}C$, the empty spaces between grains were removed and the grains showed well developed columnar shapes with smooth surfaces. The precursor Cu-In-Ga-Se films were also annealed at the temperature of $500^{\circ}C$ for 60 min under Se gas atmosphere to suppress the Se volatilization. The Se amount on the CIGS film after selenization annealing increased above the Se amount of the electrodeposited state and the $MoSe_2$ phase occurred, resulting from the diffusion of Se through the CIGS film and interaction with Mo back electrode. However, the selenization-annealed films showed higher crystallinity values than did the films annealed under Ar atmosphere with a chemical composition closer to that of the electrodeposited state.

• 한국재료학회지
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• 제17권1호
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• pp.56-59
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• 2007

Recently, requirement for the ultra thin copper foil increases with smaller and miniaturized electronic components. In this study, we evaluated the surface morphology, crystal phase ana surface roughness of the copper film electrodeposited by pulse method without using additives. Homogeneous and dense copper crystals were formed on the titanium substrate, and the optimum condition was 25% duty cycle. Moreover, the surface roughness(Ra), $0.295{\mu}m$, is the smallest value in this condition. It is thought that this copper foil is good for electromigration inhibition due to the preferential crystal growth of Cu (111)

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 추계학술대회 논문집
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• pp.258-259
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• 2015

$CuInSe_2$(CIS)층에 Na의 첨가는 태양전지 셀의 효율을 향상시키는데 도움을 주는 것으로 알려져 있다. 본 연구에서는 Na이 없는 코닝 유리 기판에 Mo/Mo-Na 이중 박막을 후면 전극으로 이용하여 CIS층의 Na소스로 작용하도록 하였다. CIS/Mo/Mo-Na 다층 박막을 제조한 후, AES분석을 통해 Na은 Mo/Na층과 CIS층의 계면과 CIS층의 표면에 주로 분포하는 것을 알 수 있었다. XRD분석을 통해서 Na함량이 증가할수록 Mo박막의 우선성장면 (110)면의 피크는 감소하였고, CIS의 우선 성장면인 (112)면은 점차 증가하여 Mo-Na층이 200 nm일 때, 최댓값을 가지고 이후로는 감소하는 경향을 보인다. CIS의 결정은 기판에 수직인 방향으로 덴드라이트 성장을 한다. Mo-Na층이 200 nm까지는 밀도가 높은 결정이 성장되지만, 그 이상으로 Na농도가 증가하면 결정 입자의 크기는 다소 성장하지만 밀도가 현저하게 감소한다. 이 결과들로 보아 CIS층의 Na농도조절은 Mo/Mo-Na 이중층의 두께조절을 통해 가능하며, Na이 CIS층에 초과되어 첨가되면 특성이 저하된다.

• 한국표면공학회지
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• 제50권5호
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• pp.373-379
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• 2017

Dry processes like evaporation and sputtering in vacuum chamber are difficult to make a uniform, large area and high quality film on thin PET substrate because of PET degradation and bad adhesion. On the other hand, wet processes like electro or electroless plating have complex processes and require high environmental cost. In this study, we successfully prepared $2{\mu}m$ Zn/Cu/Ni multilayers coated on $12{\mu}m$ polyethylene terephthalate (PET) substrate by using dry-wet mixing processes. Their surface electric resistances were evaluated around $0.2{\Omega}$ by using 4 probe measurements. Furthermore, their corrosion resistance also evaluated by natural potential test and compared with other wet, dry and mixing process samples.