• 제목/요약/키워드: Cu atoms

검색결과 214건 처리시간 0.019초

Electronic Structure and Magnetic Moments of Copper-atom in/on GaN Semiconductor

  • Kang, Byung-Sub;Lee, Haeng-Ki
    • Journal of Magnetics
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    • 제15권2호
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    • pp.51-55
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    • 2010
  • The electronic and magnetic properties of Cu-doped GaN with a Cu concentration of 6.25% and 12.5% are examined theoretically using the full-potential linear muffin-tin orbital method. The magnetic moment of Cu atoms decreases with increasing Cu concentration. The spin-polarization of Cu atoms is reduced due to the Cu d-d interaction depending on the distance between the nearest neighbouring Cu atoms. Cu atoms exhibits a clustering tendency in GaN. For Cu-adsorbed GaN thin films with a surface coverage of 0.25, the ferromagnetic state is found to be the energetically favourable state with an induced magnetic moment of $0.54\;{\mu}_B$ per supercell.

Spin Polarization of CuD Nanowires

  • Hong, Ji-Sang
    • Journal of Magnetics
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    • 제11권1호
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    • pp.20-24
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    • 2006
  • Very recently, it was presented that the one dimensional (1D) CuO atomic chains can maintain large magnetic moments. In this work, we analyzed m-resolved density of states (DOS) to understand the peculiar spin polarization occurred in Cu atoms. It was found that the $\mid{m}\mid=1$ states play an essential role in the spin polarization of Cu atoms. In addition, we calculated magnetic anisotropy energy (MAE) and observed that the distribution of MAE is strongly sensitive to the interatomic distance between Cu and O atoms. Besides, it was revealed that the contribution to MAE comes for the second half of Brillouin zone (BZ).

Cubane 구조를 가진 Cu4 분자자성체의 전자구조 계산 (Electronic Structure Calculations of Cubane-type Cu4 Magnetic Molecule)

  • 박기택
    • 한국자기학회지
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    • 제26권4호
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    • pp.119-123
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    • 2016
  • Cu 원자 4개를 포함한 cubane 구조의 분자자성체의 전기구조 및 자기적 성질을 제1원리의 범밀도함수법을 이용하여 계산하였다. 계산 된 결과, Cu 원자는 +2가를 가지며, 팔면체 배위자중 면내 짧은 4개의 배위산소원자로 인해 3d $x^2-y^2$ hole 궤도를 가지고 있었다. 스핀배열에 따른 총 에너지 계산에서 면내는 반강자성, 면간은 강자성 자기구조가 가장 안정되었다. 교환상호작용 J의 크기는 면내의 J가 훨씬 크고 반강자성 성질을 나타내었으며, 나머지 면간의 J값은 아주 작았다. 이러한 원인은 Cu $x^2-y^2$ hole 궤도정렬로 인하여 면내 강한 초교환상호작용의 결과이다.

The Electronic Structures and Magnetism of Monolayer Fe on CuGaSe2(001)

  • Jin, Ying-Jiu;Lee, Jae-Il
    • Journal of Magnetics
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    • 제12권2호
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    • pp.59-63
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    • 2007
  • Ferromagnet/Semiconductor heterostructures have attracted much attention because of their potential applications in spintronic devices. We investigated the electronic structures and magnetism of monolayer Fe on $CuGaSe_2(001)$ by using the all-electron full-potential linearized augmented plane-wave method within a generalized gradient approximation. We considered the monolayer Fe deposited on both the CuGa atoms terminated (CuGa-Term) and the Se atom terminated (Se-Term) surfaces of $CuGaSe_2(001)$. The calculated magnetic moment of the Fe atom on the CuGa-Term was about $2.90\;{{\mu}_B}$. Those of the Fe atoms on the Se-Term were in the range of $2.85-2.98\;{{\mu}_B}$. The different magnetic behaviors of the Fe atoms on two different surfaces were discussed using the calculated layer-projected density of states.

RDS를 의한 Cu(110)와 산소가 흡착된 Cu(110) 표면에 Cu의 성장 모드 (The Growth Mode of Cu Atoms on Cu(110) and Oxygen-covered Cu(110) Surfaces by Reflectance Difference Spectroscopy)

  • 김상현
    • 한국진공학회지
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    • 제15권1호
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    • pp.45-49
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    • 2006
  • 깨끗한 Cu(110)와 산소가 흡착된 Cu(110) 표면에 Cu 성장에 의한 광학적 이방성의 변화를 RDS를 이용하여 연구하였다. 250K에서 Cu를 성장하면서 성장 모드와 산소의 계면활성제 효과를 확인하였다. 두 표면에 Cu를 성장하면서 4,25eV 봉우리의 규칙적인 변화를 확인하여 layer-by-layer 모드를 확인하였다.

Si 기판에서 구리와 철 금속불순물의 제거에 대한 연구 (A Study on the Removal of Cu and Fe Impurities on Si Substrate)

  • 최백일;전형탁
    • 한국재료학회지
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    • 제8권9호
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    • pp.837-842
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    • 1998
  • ULSI급 소자의 집적도가 높아짐에 따라 공정의 신뢰도 및 수율 향상을 위한 세정 방법에 대한 관심이 더욱 높아지고 있다. 그중 가장 관심을 집중시키는 분야는 구리나 철과 같은 금속불순물의 제거에 관한 것이다. 본 연구에서는 금속 불순물 중 실제 공정에서 잘 오염되는 것으로 알려진 구리와 철 불순물을 인위적으로 오염시킨 후 $\textrm{H}_2\textrm{O}_2$와 HF의 혼합용액과 UV/$\textrm{O}_3$과 HF처리의 조합을 이용한 세정 방법을 이용하여 금속불순물을 제거하였다. 세정후 제정효과는 TXRF를 이용하여 측정하였고 Si 기판의 표면 거칠기를 AFM을 이용하여 측정하였다. 또한 금속 불순물의 흡착형태와 흡착기구 등을 SEM을 이용해 관찰하였고 AES를 이용하여 화학적 성분 분석을 실시하였다. 실험 결과 인위적 오염 후 구리의 오염도는 $\textrm{10}^{14}$ atoms/$\textrm{cm}^2$이었으며 각각의 세정을 통하여 $\textrm{10}^{10}$ atoms/$\textrm{cm}^2$으로 감소되었으며 반복된 세정으로 더욱 우수한 세정효과와 표면 거칠기의 개선 효과를 얻을 수 있었다. 구리는 박막의 형태가 아닌 구형의 입자 형태로 화학적 흡착에 의해 오염되는 것으로 관찰되었다. 철의 경우는 오염도가 $\textrm{10}^{13}$ atoms/$\textrm{cm}^2$ 이며 세정효과는 구리의 경우와 유사한 결과를 보여주었다. 철 불순물은 물리적 흡착에 의해 Si 표면에 오염되는 것으로 보이며 역시 구형의 입자형태로 표면에 흡착하는 것으로 관찰되었다.

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$Cu[SO_3(CH_2)_4SO_3].4H_2O$ 의 구조 및 자기적 특성 (Structural anld magnetic properties of $Cu[SO_3(CH_2)_4SO_3].4H_2O$)

    • 한국결정성장학회지
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    • 제13권5호
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    • pp.211-216
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    • 2003
  • The $Cu[SO_3(CH_2)_4SO_3$]ㆍ$4H_2O$ compound was synthesized. The three-dimensional structure of $Cu[SO_3(CH_2)_4SO_3$]ㆍ$4H_2O$ compound was determined. The copper atom is bridged by 4 oxygen atoms of 4 water molecules and 2 oxygen atoms of butanedisulfonate. The butyl chain in the plane of four copper atoms is oriented parallel and perpendicular to the one of plane axis, alternatively. Magnetic data indicate that this compound behaves a typical paramagnetic.

텅스텐 활성소결에서 입계확산의 역할 (The Role of Grain Boundary Diffusion in the Activated Sintering of Tungsten Powder)

  • 이재성
    • 한국분말재료학회지
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    • 제1권1호
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    • pp.79-84
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    • 1994
  • The mechanism of activated sintering of tungsten powder was discussed in terms of diffusion and segregation of activator atoms at W grain boundaries. Shrinkage behaviours of W-0.2wt.% Ni, W-0.2wt.% Cu or pure W powder compacts during sintering at low temperatures of 900~ $1200^{\circ}C$ were investigated. It was found that the Cu additive inhibits sintering process causing lower densification than pure W compact while remarkable shrinkage occurred in the Ni added W powder. Such contrary effect was explained by comparing self diffusion processes along Ni or Cu segregated W boundaries in which Ni segregants enhance but Cu atoms retard the migration of W atoms at W boundaries.

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Initial Growth of Nb on Cu(100) studied by STM and Density Functional Theory

  • Lee, Joon-Hee;Ryang, Kyung-Deuk;Son, Chul-Woo;Lyo, In-Whon;Kang, Jin-Ho;Kang, Myung-Ho
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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    • pp.159-159
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    • 2000
  • Initial growth mode of Nb on Cu(100) is studied by scanning tunneling microscopy (STM) and density functional theory. Nb/Cu is immiscible at room temperature, but isolated Nb atoms are expected to be incorporated up to the second layer by DFT. STM shows that Nb atoms mix with Cu atoms in the first layer at room temperature and diffuse into the second layer upon annealing. In the second layer, Nb/induced features are preferentially found at step edges and appear as bright dots surrounded by dark rings. Details of comparison between experiment and theory will be discussed.

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AlN 반도체와 Cu의 도핑 농도에 대한 자성 (Magnetic Properties of Cu-doped AlN Semiconductor)

  • 강병섭;이행기
    • 반도체디스플레이기술학회지
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    • 제9권3호
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    • pp.1-4
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    • 2010
  • First-principles calculations based on spin density functional theory are performed to study the spin-resolved electronic properties of AlN doped with a Cu concentration of 6.25%-18.75%. The ferromagnetic state is more energetically favorable state than the antiferromagnetic state or the nonmagnetic state. For $Al_{0.9375}Cu_{0.0625}N$, a global magnetic moment of 1.26 mB per supercell, with a localized magnetic moment of 0.75 $m_B$ per Cu atom is found. The magnetic moment is reduced due to an increase in the number of Cu atoms occupying adjacent cation lattice position. For $Al_{0.8125}Cu_{0.1875}N$, the magnetism of the supercell disappears by the interaction of the neighboring Cu atoms. The nonmagnetic to ferromagnetic phase transition is found to occur at this Cu concentration. The range of concentrations that are spin-polarized should be restricted within very narrow.