• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.176.1-176.1
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• 2014

Graphene has attracted an increasing attention due to its extraordinary electronic, mechanical, and thermal properties. Especially, the two dimensional (2D) sheet of graphene with an extremely high surface to volume ratio has a great potential in the preparation of multifunctional nanomaterials, as 2D supports to host metal nanoparticles (NPs). Copper oxide is widely used in various areas as antifouling paint, p-type semiconductor, dry cell batteries, and catalysts. Although the copper oxide(II) has been well known for efficient catalyst in C-N cross-coupling reaction, copper oxide(I) has not been highlighted. In this research, CuO and Cu2O nanoparticles (NPs) dispersed on the surface of grapehene oxide (GO) have been synthesized by impregnation method and their morphological and electronic structures have been systemically investigated using TEM, XRD, and XAFS. We demonstrate that both CuO and Cu2O on graphene presents efficient catalytic performance toward C-N cross coupling reaction. The detailed structural difference between CuO and Cu2O NPs and their effect on catalytic performance are discussed.

• 한국분말재료학회지
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• 제21권3호
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• pp.191-195
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• 2014

This study reports a simple way of fabricating the porous Cu with unidirectional pore channels by freeze drying camphene slurry with Cu oxide coated Cu powders. The coated powders were prepared by calcination of ball-milled powder mixture of Cu and Cu-nitrate. Improved dispersion stability of camphene slurry could be achieved using the Cu oxide coated Cu powders instead of pure Cu powders. Pores in the frozen specimen at $-25^{\circ}C$ were generated by sublimation of the camphene during drying in air, and the green bodies were sintered at $750^{\circ}C$ for 1 h in $H_2$ atmosphere. XRD analysis revealed that the coated layer of Cu oxide was completely converted to Cu phase without any reaction phases by hydrogen heat treatment. The porous Cu specimen prepared from pure Cu powders showed partly large pores with unidirectional pore channels, but most of pores were randomly distributed. In contrast, large and aligned parallel pores to the camphene growth direction were clearly observed in the sample using Cu oxide coated Cu powders. Pore formation behavior depending on the initial powders was discussed based on the degree of powder rearrangement and dispersion stability in slurry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.364-365
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• 2005

This paper report nanotribological behavior between Si tip and Cu wafer surfaces which was treated various concentration of $H_2O_2$. This experimental approach has proven atomic level insight into Cu CMP. It has been used to study interfacial friction and adhesion force between Si tip and Cu wafer surfaces in air by atomic force microscopy (AFM). Adhesion force of Cu surfaces which was pre-cleaned in diluted HF solution was lager than Cu oxide surfaces. Adhesion force of Cu oxide surface was saturated around 7 nN. Slope of normal force vs lateral signal was increased as increasing concentration of $H_2O_2$ and it was saturated around 24. Friction force of Cu oxide was lager than Cu.

• 한국표면공학회지
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• 제55권2호
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• pp.63-69
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• 2022

Preparing various types of thin films of oxide semiconductors is a promising approach to fabricate efficient photoanodes and photocathodes for hydrogen production via photoelectrochemical (PEC) water splitting. In this work, we investigate the feasibility of an efficient photocathode for PEC water reduction of a p-type oxide semiconductor cupric oxide (CuO) thin film prepared via a facile method combined with sputtering Cu metallic film on fluorine-doped thin oxide (FTO) coated glass substrate and subsequent thermal oxidation of the sputtered Cu metallic film in dry air. Characterization of the structural, optical, and PEC properties of the CuO thin film prepared at various Cu sputtering powers reveals that we can obtain an optimum CuO thin film as an efficient PEC photocathode at a Cu sputtering power of 60 W. The photocurrent density and the optimal photocurrent conversion efficiency for the optimum CuO thin film photocathode are found to be -0.3 mA/cm² and 0.09% at 0.35 V vs. RHE, respectively. These results provide a promising route to fabricating earth-abundant copper-oxide-based photoelectrode for sunlight-driven hydrogen generation using a facile method.

• 한국표면공학회지
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• 제55권4호
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• pp.215-221
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• 2022

In the present work, copper oxide thin films were formed by heat-treatment method with different temperatures and atmosphere, e.g., at 200 ~ 400 ℃; in air and Ar atmosphere. The morphological, electrical and optical properties of the thermally fabricated Cu oxide films were analyzed by SEM, XRD, and UV-VIS spectrometer. Thereafter, photoelectrochemical properties of the thermal copper oxide films were analyzed under solar light (AM 1.5, 100 mW/cm²). Conclusively, the highest photocurrent was obtained with Cu₂O formed under the optimum annealing condition at 300 ℃ in air atmosphere. In addition, EIS results of Cu oxide formed in air atmosphere showed relatively low resistance and long electron life-time compared with Cu Oxide fabricated in Ar atmosphere at the same temperature. This is because heat-treatment in Ar atmosphere could not form Cu₂O due to lack of oxygen, and thermally formed CuO at high temperature suppressed stability and conductivity of the Cu oxide.

• 공업화학
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• 제18권6호
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• pp.618-624
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• 2007

Cu/Fe/Zr 혼합 산화물 매체 상에서의 2단계 열화학 메탄 개질 반응을 고정층 적외선 반응로를 이용하여 수행했다. 첫 번째 단계에서 금속 산화물은 CO, $H_2$ 및 환원된 금속 산화물을 생성하기 위하여 1173 K의 온도에서 메탄으로 환원되었다. 두번째 단계에서 환원된 금속 산화물은 $H_2$와 금속 산화물을 생성하기 위하여 973 K의 온도에서 재산화되었다. 본 연구에서는 Cu/Fe/Zr 혼합 산화물 내 Cu 첨가량에 따른 반응 특성과 사이클 반응을 평가하였다. Cu/Fe/Zr 혼합 산화물 매체 내 Cu 첨가량 증가에 따라 첫 번째 단계에서 $CH_4$ 전환율, $CO_2$로의 선택성 및 $H_2/CO$ 몰 비는 증가하였으며, CO로의 선택성은 감소하는 경향을 나타냈다. 한편, 두 번째 단계에서 $H_2$ 생성량은 Cu 첨가량 증가에 따라 감소하는 것으로 나타났다. Cu의 첨가량이 x = 0.7인 $Cu_xFe_{3-x}O_4/ZrO_2$ 매체는 내구성이 우수한 매체임을 지시하듯이 10회의 사이클 순환 반응에서 우수한 재생 성능을 나타냈다. 더 나아가 물 분해 단계에서 침적된 탄소의 가스화 반응은 매체 내 Cu 첨가에 의해 촉진되었다.

• 대한금속재료학회지
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• 제49권12호
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• pp.950-955
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• 2011

In the present study, the formation of hollow Cu oxide nanoparticles through the oxidation process at temperatures from 200 to $300^{\circ}C$ has been studied by transmission electron microscopy with Cu nanoparticles produced by the plasma arc discharge method. The Cu nanoparticles had a thin oxide layer on the surface at room temperature and the thickness of this oxide layer increased during oxidation in atmosphere at $200-300^{\circ}C$ However, the oxide layer consisted of $Cu_2O$ and CuO after oxidation at $200^{\circ}C$ whereas this layer was comprised of only CuO after oxidation at $300^{\circ}C$ On the other hand, hollow Cu oxide nanoparticles are obtained as a result of vacancy aggregation in the oxidation processes, resulting from the rapid outward diffusion of metal ions through the oxide layer during the oxidation process.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2010년도 추계학술발표논문집 1부
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• pp.356-358
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• 2010

Cuprous oxide ($Cu_2O$)를 기초로 하여 산화 박막 트랜지스터에 대하여 연구를 하였다. 일정한 두께의 cuprous oxide ($Cu_2O$) 박막을 조건별로 열처리 공정을 하고 그에 따른 변화를 측정을 하였다. 그 측정한 결과 중 가장 좋은 열처리 조건으로 열 증착 방식(Vacuum Thermal Evaporation)을 사용하여 cuprous oxide ($Cu_2O$) 비정질 산화 박막 트랜지스터를 제작 및 측정했다.

• Bulletin of the Korean Chemical Society
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• 제32권9호
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• pp.3395-3399
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• 2011

Copper oxide thin films were synthesized by reactive radio frequency magnetron sputtering at different oxygen gas ratios. The chemical and physical properties of the thin films were investigated by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD). XPS results revealed that the dominant oxidation states of Cu were $Cu^0$ and $Cu^+$ at 0% oxygen ratio. When the oxygen ratios increased above 5%, Cu was oxidized as CuO as detected by X-ray induced Auger electron spectroscopy and the $Cu(OH)_2$ phase was confirmed independent of the oxygen ratio. The valence band maxima were $1.19{\pm}0.09$ eV and an increase in the density of states was confirmed after formation of CuO. The thickness and roughness of copper oxide thin films decreased with increasing oxygen ratio. The crystallinity of the copper oxide films changed from cubic Cu through cubic $Cu_2O$ to monoclinic CuO with mean crystallite sizes of 8.8 nm (Cu) and 16.9 nm (CuO) at the 10% oxygen ratio level.

• 한국세라믹학회지
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• 제35권1호
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• pp.55-65
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• 1998

Ag-36.8a%Cu-7.4at%Ti 조성의 브레이징 합금을 Si3N4 기판위에 브레이징한 후 브레이징 합금의 산화거동을 대기중 400, 500, 600$^{\circ}C$에서 조사하였다. 브레이징 합금의 구성원소인 Ag는 산화되지 않고 Cu와 Ti가 산화되며, 산화거동은 포물선적 산화법칙을 따랐다. 브레이징 합금의 산화에 따른 활성화에너지는 80kj/ mol 으로서 소량 첨가된 활성원소인 Ti에 의하여 순수한 Cu의 산화시 활성화에너지보다 감소하였다. 산화 초기에 생성되는 외부산화물은 Cu이온의 외부확산에 의해 성장이 지배되는 Cu산화물로 구성되어 있었다. 산화기간이 경과함에 따라 외부산화물층 아래에서 Cu의 농도는 감소되고 Ag의 농도는 증가하는 농도구배가 발생하여, 브레이징 합금의 산화물은 Cu산화물층(CuO)/Ag잉여층/Cu산화물층(Cu2O)/Ag잉여층의 다층구조를 갖았다. 또한, 분위기중의 산소는 Cu산화물 및 Ag잉여층을 통해 브레이징 합금 내부로 확산되어 브레이징 합금내의 Ti와 반응하여 내부산화물 TiO2를 생성하였다.