• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 추계학술발표회 초록집
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• pp.45-46
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• 1999

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.91.2-91.2
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• 2010

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. The better performance of Ni/Cu contacts is attributed to the reduced series resistance due to better contact conductivity of Ni with Si and subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading combined with the lower resistance of a metal silicide contact and improved conductivity of plated deposit. This improves the FF as the series resistance is deduced. This is very much required in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. This paper using selective emitter structure technique, fabricated Ni/Cu plating metallization cell with a cell efficiency of 17.19%.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1352-1355
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• 2004

We have applied front contact metallization of plated nickel and copper for high efficiency passivated emitter rear contact(PERC) solar cell. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. The plating technique is a preferred method for commercial solar cell fabrication because it is a room temperature process with high growth rates and good morphology. In this system, the electroless plated Ni is utilized as the contact to silicon and the plated Cu serves as the primary conductor layer instead of traditional solution that are based on Ti/Pd/Ag contact system. Experimental results are shown for over 20 % PERC cells with the Plated Ni/Cu contact system for good performance at low cost.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 추계학술발표회
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• pp.164-164
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• 1996

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.104-104
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• 1999

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.145-149
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• 1995

The metallization is the key to determining cell costs, call performance, and cell and system reliabiltiy. The Burled Contact Solar Cell (BCSC) was specifical1y desinged to be compatible tilth low cost, mass production techniques and avoid the conventional metallization problem. By using electroless plating trchniqeu, we performed this metallization inexpensively and reliabley, This paper presents the details of the optimization procedure of metallization schemes on laser grooved cell surface Commercially available Ni ,Cu, and Ag plating solutions were applied for the cell metallization. The application of those solutions on the buried contact front metalization has resulted in an cell efficiency of 18.5% The cell parameters are an open circuit voltage of 651 mV, short circuit current density of 38.6 mA/$\textrm{cm}^2$, and fill factor of 73.5%.

• 대한기계학회논문집A
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• 제28권5호
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• pp.532-538
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• 2004

MEMS technology applying to the sensors and micro-electro devices is complete system. These microsystems are made by variable processes. Especially, the mentallization process has very important functions to transfer the power operating the sensor and signal induced from sensor part. But in the structures of MEMS the local stress concentration and deformation are often yielded by an irregular geometrical shape and different constraint. Therefore, this paper studies the effect of supporting type and thickness ratio about thin film of the substrate on the residual stress variation when the thermal loads is applied to the multi-layer thin film fabricated by metallization process. Specimens were made from several materials such as Al, Au and Cu. Then, uniform thermal load was applied, repeatedly. The residual stress was measured by FE Analysis and nano-indentation method using AFM. Generally, the specimen made of Al induced the larger residual stress than that of made of other materials. Specimen made of Cu and Au having the low thermal expansion coefficient induces the minimum residual stress. Similarly, the lowest indentation length was measured by nano-indentation method in the Si/Au/Cu specimen. Particularly, clusters are created in the specimen made of Cu by thermal load and the indentation length became increasingly large by cluster formation.

• 대한금속재료학회지
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• 제46권1호
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• pp.33-38
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• 2008

The interfacial reactions and shear strength of pure Sn solder bump were investigated with different under bump metallizations (UBMs) and reflow numbers. Two different UBMs were employed in this study: Cu and Ni. Cu6Sn5 and Cu3Sn intermetallic compounds (IMCs) were formed at the bump/Cu UBM interface, whereas only a Ni3Sn4 IMC was formed at the bump/Ni UBM interface. These IMCs grew with increasing reflow number. The growth of the Cu-Sn IMCs was faster than that of the Ni-Sn IMC. These interfacial reactions greatly affected the shear properties of the bumps.

• 한국재료학회지
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• 제12권3호
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• pp.225-230
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• 2002

Sn was selected as an alloying element of Cu. The Cu-Sn thin layers were deposited on the Si substrates by the electroplating method and their properties were studied. By rapidly thermal annealing(RTA) up to 40$0^{\circ}C$ after electroplating, sheet resistance decreased and adhesion strength increased, but that trend was reversed at the 50$0^{\circ}C$ RTA. Cu-Sn particles grew dense and the surface was uniform up to 40$0^{\circ}C$, but at 50$0^{\circ}C$, empty area was introduced and the surface became rough owing to oxidation and particle coarsening and agglomeration. Deposited layer contained significant amount of Si, while pure Cu-Sn layer with the composition ratio of 90:10 was present only on the top surface. However, no significant change in the Cu composition within alloy layers occured by the RTA regardless of its temperature. This indicates that the Cu diffusion into the Si was suppressed by the presence of Sn.

• Advances in materials Research
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• 제1권1호
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• pp.83-92
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• 2012

The effect of under-bump-metallization (UBM) on electromigration was investigated at temperatures ranging from $135^{\circ}C$ to $165^{\circ}C$. The UBM structures were examined: 5-${\mu}m$-Cu/3-${\mu}m$-Ni and $5{\mu}m$ Cu. Experimental results show that the solder joint with the Cu/Ni UBM has a longer electromigration lifetime than the solder joint with the Cu UBM. Three important parameters were analyzed to explain the difference in failure time, including maximum current density, hot-spot temperature, and electromigration activation energy. The simulation and experimental results illustrate that the addition 3-${\mu}m$-Ni layer is able to reduce the maximum current density and hot-spot temperature in solder, resulting in a longer electromigration lifetime. In addition, the Ni layer changes the electromigration failure mode. With the $5{\mu}m$ Cu UBM, dissolution of Cu layer and formation of $Cu_6Sn_5$ intermetallic compounds are responsible for the electromigration failure in the joint. Yet, the failure mode changes to void formation in the interface of $Ni_3Sn_4$ and the solder for the joint with the Cu/Ni UBM. The measured activation energy is 0.85 eV and 1.06 eV for the joint with the Cu/Ni and the Cu UBM, respectively.