• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.63-69
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• 2007

We investigated interconnection processes using Cu vias for MEMS sensor packages. Ag paste layer was formed on a glass substrate and used as a seed layer for electrodeposition of Cu vias after bonding a Si substrate with through-via holes. With applying electrodeposition current densities of $20mA/cm^2\;and\;30mA/cm^2$ at direct current mode to the Ag paste seed-layer, Cu vias of $200{\mu}m$ diameter and $350{\mu}m$ depth were formed successfully without electrodeposition defects. Interconnection processes for MEMS sensor packages could be accomplished with Ti/Cu/Ti line formation, Au pad electrodeposition, Sn solder electrodeposition and reflow process on the Si substrate where Cu vias were formed by Cu electrodeposition into through-via holes.

• Journal of the Korean Electrochemical Society
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• v.13 no.1
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• pp.40-44
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• 2010

In this work, highly uniform size-controlled $Cu_2O$ nanocubes can be successfully formed by means of pulse electrodeposition. The size distribution, crystal structure, and chemical state of deposited $Cu_2O$ nanocubes are characterized using scanning electron microscopy, transmission electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The phase transition from $Cu_2O$ to Cu can be controlled by constant current electrodeposition as a function of deposition time. In particular, the size of the $Cu_2O$ nanocubes can be controlled using pulse electrodeposition as a function of applied current density.

• Korean Chemical Engineering Research
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• v.52 no.1
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• pp.26-39
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• 2014

Cu interconnection in electronic devices is fabricated via damascene process including Cu electrodeposition. In this review, Cu electrodeposition and superfilling for fabricating Cu interconnection are introduced. Superfilling results from the influences of organic additives in the electrolyte for Cu electrodeposition, and this is enabled by the local enhancement of Cu electrodeposition at the bottom of filling feature formed on the wafer through manipulating the surface coverage of organic additives. The dimension of metal interconnection has been constantly reduced to increase the integrity of electronic devices, and the width of interconnection reaches the range of few tens of nanometer. This size reduction raises the issues, which are the deterioration of electrical property and the reliability of Cu interconnection, and the difficulty of Cu superfilling. The various researches on the development of organic additives for the modification of Cu microstructure, the application of pulse and pulse-reverse electrodeposition, Cu-based alloy superfilling for improvement of reliability, and the enhancement of superfilling phenomenon to overcome the current problems are addressed in this review.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.232-239
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• 2013

Thin light-active layers of the $CuInSe_2$ solar cell were prepared on Mo-coated sodalime glass substrates by one-step electrodeposition and post-annealing. The structure, morphology, and composition of $CuInSe_2$ film could be controlled by deposition parameters, such as the composition of metallic precursors, the concentration of complexing agents, and the temperature of post-annealing with elemental selenium. A dense and uniform Cu-poor $CuInSe_2$ film was successfully obtained in a range of parametric variation of electrodeposition with a constant voltage of -0.5 V vs. a Ag/AgCl reference electrode. The post-annealing of the film at high temperature above $500^{\circ}C$ induced crystallization of $CuInSe_2$ with well-developed grains. The KCN-treatment of the annealed $CuInSe_2$ films further induced Cu-poor $CuInSe_2$ films without secondary phases, such as $Cu_2Se$. The structure, morphology, and composition of $CuInSe_2$ films were compared with respect to the conditions of electrodeposition and post-annealing using SEM, XRD, Raman, AES and EDS analysis. And the conditions for preparing device-quality $CuInSe_2$ films by electrodeposition were proposed.

• Korean Journal of Materials Research
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• v.24 no.4
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• pp.186-193
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• 2014

A thin Cu seed layer for electroplating has been employed for decades in the miniaturization and integration of printed circuit board (PCB), however many problems are still caused by the thin Cu seed layer, e.g., open circuit faults in PCB, dimple defects, low conductivity, and etc. Here, we studied the effect of heat treatment of the thin Cu seed layer on the deposition rate of electroplated Cu. We investigated the heat-treatment effect on the crystallite size, morphology, electrical properties, and electrodeposition thickness by X-ray diffraction (XRD), atomic force microscope (AFM), four point probe (FPP), and scanning electron microscope (SEM) measurements, respectively. The results showed that post heat treatment of the thin Cu seed layer could improve surface roughness as well as electrical conductivity. Moreover, the deposition rate of electroplated Cu was improved about 148% by heat treatment of the Cu seed layer, indicating that the enhanced electrical conductivity and surface roughness accelerated the formation of Cu nuclei during electroplating. We also confirmed that the electrodeposition rate in the via filling process was also accelerated by heat-treating the Cu seed layer.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.117-123
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• 2014

Cu through-vias, which can be used as thermal vias or vertical interconnects, were formed using bottom-up electrodeposition filling as well as top-down electrodeposition filling into open via-holes and their microstructures were observed. Solid Cu through-vias without voids could be successfully formed by bottom-up filling as well as top-down filling with direct-current electrodeposition. While chemical-mechanical polishing (CMP) to remove the overplated Cu layer was needed on both top and bottom surfaces of the specimen processed by top-down filling method, the bottomup process has an advantage that such CMP was necessary only on the top surface of the sample.

• Journal of the Korean Electrochemical Society
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• v.24 no.3
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• pp.35-41
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• 2021

In this study, the effect of zwitterionic surfactant on Cu electrodeposition was investigated through cyclic voltammetry. With the addition of (dodecyldimethylammonio)propanesulfonate (DDAPS) as a representative zwitterionic surfactant in the electrolyte for Cu electrodeposition, the electrochemical Cu²⁺ reduction was inhibited on Cu and glassy carbon electrodes. Its inhibition effect was similar to that of cationic surfactant rather than anionic surfactant. Moreover, DDAPS interacted with chloride ion and exhibited the mass transfer-dependent inhibition behavior, which indicates that its inhibition function is associated with the formation of its surface aggregates on anion-covered Cu surface. In addition, adsorbed DDAPS slightly reduced the surface roughness of Cu electrodeposits. These characteristics were similar to those of cationic surfactant, but less obvious. It means the effect of DDAPS on Cu electrodeposition originates from the cationic head group which is shield by anionic head group.

• Journal of Powder Materials
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• v.13 no.3 s.56
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• pp.187-191
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• 2006

Al-Cu alloy nano powders were produced by the electrical explosion of Cu-plated Al wires. The composition and phase of the alloy could be controlled by varying the thickness of Cu deposit on Al wire. When the Cu layer was thin, Al solid solution and $CuAl_2$ were the major phases. As the Cu layer becomes thicker, Al diminished while $Al_4Cu_9$ phase prevailed instead. The average particle size of Al-Cu nano powders became slightly smaller from 63 nm to 44 nm as Cu layer becomes thicker. The oxygen content of Al-Cu powder decreased linearly with Cu content. It is well demonstrated that the electrodeposition combined with wire explosion could be simple and economical means to prepare variety of alloy and intermetallic nano powders.

• Journal of the Korean Electrochemical Society
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• v.3 no.3
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• pp.152-156
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• 2000

The effect of cupric ion concentration on the throwing power has been studied in the electrodeposition of Cu on the porous reticular electrodes with the electrolytes of $CuSO_4\;and\;H_2SO_4$. Sulfuric acid electrolytes with lower concentration of $CuSO_4$ improved throwing power in electrodeposition of copper not only due to higher cathodic polarizability but also due to higher conductivity of the electrolytes. The increase in conductivity of the electrolytes at low concentration of $CuSO_4$ could be also illustrated by the decrease in viscosity of the electrolytes. It was found that both the throwing power and the limiting current density should be taken into account in the electrodeposition of Cu on the reticular electrodes. According to the experimental results, the electrolyte of 0.2M $CuSO_4$ and 0.5M $H_2SO_4$ was found to be the most appropriate condition at the current density of $10mA/cm^2$.

• Archives of Metallurgy and Materials
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• v.66 no.3
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• pp.741-744
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• 2021

Selective deposition was performed on a micrometer trench pattern using a microcontact printing (μCP) process. Alkanethiols required for selective deposition were analyzed according to the carbon chain by linear sweep voltammetry (LSV). According to the LSV analysis, the effect of inhibiting Cu deposition depending on the length of the carbon chain was observed. During the Cu electrodeposition, the trench could be filled without voids by additives (PEG, SPS, JGB) in the plating solution. A μCP process suppressing the deposition of the sample was used for selective Cu electrodeposition. However, there was oxidation and instability of the sample and 1-hexadecanethiol in air. To overcome these problems, the μCP method was performed in a glove box to achieve effective inhibition.