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http://dx.doi.org/10.6117/kmeps.2014.21.4.117

Cu Through-Via Formation using Open Via-hole Filling with Electrodeposition  

Kim, Jae-Hwan (Materials Science and Engineering, Hongik University)
Park, Dae-Woong (Materials Science and Engineering, Hongik University)
Kim, Min-Young (Materials Science and Engineering, University of Texas)
Oh, Tae Sung (Materials Science and Engineering, Hongik University)
Publication Information
Journal of the Microelectronics and Packaging Society / v.21, no.4, 2014 , pp. 117-123 More about this Journal
Abstract
Cu through-vias, which can be used as thermal vias or vertical interconnects, were formed using bottom-up electrodeposition filling as well as top-down electrodeposition filling into open via-holes and their microstructures were observed. Solid Cu through-vias without voids could be successfully formed by bottom-up filling as well as top-down filling with direct-current electrodeposition. While chemical-mechanical polishing (CMP) to remove the overplated Cu layer was needed on both top and bottom surfaces of the specimen processed by top-down filling method, the bottomup process has an advantage that such CMP was necessary only on the top surface of the sample.
Keywords
Cu via; thermal via; TSV; electrodeposition; open via;
Citations & Related Records
Times Cited By KSCI : 8  (Citation Analysis)
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