• Title/Summary/Keyword: Cu/polyimide

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A Study on the Improvement of Adhesion according to the Process Variables of Ion Beam in the Cu/Polyimide Thin Film (이온빔의 공정변수에 따른 Cu/Polyimide 박막의 접착력향상에 관한 연구)

  • Shin Youn-Hak;Kim Myung-Han;Choi Jae-Ha
    • Korean Journal of Materials Research
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    • v.15 no.7
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    • pp.458-464
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    • 2005
  • In microelectronics packaging, the reliability of the metal/polymer interfaces is an important issue because the adhesion strength between dissimilar materials is often inherently poor. The modification of polymer surfaces by ion beam irradiation and rf plasma is commonly used to enhance the adhesion strength of the interface. T-peel strengths were measured using a Cu/polyimide system under varying $N_2^+$ ion beam irradiation conditions for pretreatment. The measured T-peel strength showed reversed camel back shape regarding the fixed metal-layer thickness, which was quite different from the results of the 90° peel test. The elementary analysis suggests that the variation of the T-peel strength is a combined outcome of the plastic bending work of the metal and polymer strips. The results indicate that the peel strength increases with $N_2^+$ ion beam irradiation energy at the fixed metal-layer thickness.

A Study on the Improvement of Adhesion according to the Surface Modification of Cu/Polyimide Films by ion Beam Irradiation (이온빔에 의한 Cu/Polyimide 표면개질에 따른 접착력향상에 관한 연구)

  • Shin Youn-Hak;Chu Jun-Sick;Lee Seoung-Woo;Jung Chan-Hoi;Kim Myung-Han
    • Korean Journal of Materials Research
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    • v.15 no.1
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    • pp.42-46
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    • 2005
  • In microelectronics packaging, the reliability of the metal/polymer interfaces is an important issue because the adhesion strength between dissimilar materials is often inherently poor. The modification of polymer sufaces by ion beam irradiation and rf plasma are commonly used to enhance the adhesion strength of the interface. T-peel strengths were measured using a Cu/polyimide system under varying $Ar^+$ ion beam irradiation pretreatment conditions. The measured T-peel strength showed reversed camel back shape regarding the fixed metal-layer thickness, which was quite different from the results of the $90^{\circ}$ peel test. The elementary analysis suggests that the variation of the T-peel strength is a combined outcome of the plastic bending work of the metal and polymer strips. The results indicate that the peel strength increases with $Ar^+$ ion beam irradiation energy at the fixed metal-layer thickness.

The effects of plasma treatment of polyimide surface on the adhesion of chromium/polyimide (크롬/폴리이미드의 접착력에 미치는 폴리이미드 표면의 플라즈마 처리의 효과)

  • Chung, Tae-Gyeong;Kim, Young-Ho;Yu, Jin
    • Journal of the Korean institute of surface engineering
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    • v.26 no.2
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    • pp.71-81
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    • 1993
  • Thed effects of Ar or Oxygen RF plasma treatment on the adhesion behavior of Cr films to polyimide sub-strates have been investigated by using SEM, XRD, AES, and $90^{\circ}$peel test. By applying RF plasma treatment of the polyimide surface prior to metal deposition, the peel adhesion strength of Cu/Cr films sputtered onto the fully cured BPDA-PDA polyimide was highly increased from about 3g/mm to 90 ~ 100g/mm. Improved peel adhesion strength of Cr/polyimide interfaces due to RF plasma treatment was attributed to the contributions from surface cleaning, Cr-polyimide bonding at the interface, and force required for plastic deformation of the film. While the surface topology change of the polyimide caused by RF plasma treatment makes a little contri-bution to the improved adhesion.

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Ion Beam-based Surface Modification of Polyimide Films for Adhesion Improvement with Deposited Metal Layer

  • Cho, Hwang-Woo;Jung, Chan-Hee;Hwang, In-Tae;Choi, Jae-Hak;Nho, Young-Chang
    • Journal of Radiation Industry
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    • v.4 no.4
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    • pp.335-339
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    • 2010
  • In this study, the surface of polyimide (PI) films was modified using ion implantation to enhance its adhesion to a deposited copper (Cu) layer. The surfaces of the PI films were implanted with 150 keV $Xe^+$ ions at fluences varying from $1{\times}10^{14}$ to $1{\time}10^{16}ions\;cm^{-2}$. The Cu layers were then deposited on the implanted PI. The surface properties of the implanted PI film were investigated based on the contact angle measurements, Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Furthermore, the adhesive strength between the deposited Cu layer and PI film was estimated through a scratch test using a nanoindenter. As a result, the surface environment of the PI film was changed by the ion implantation, which could have a significant effect on the adhesion between the deposited Cu layer and the PI.

Fabrication of Laminated Multi-layer Flexible Substrate with Cu/Sn Via (Cu/Sn 비아를 적용한 일괄적층 방법에 의한 다층연성기판의 제조)

  • Lee H. J.;Yu Jin
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.4 s.33
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    • pp.1-5
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    • 2004
  • A multi-layer flexible substrate is composed of copper(Cu)/polyimide that are known as good electrical conductivity, and low dielectric constant, respectively. In this study. conductor line of $5{\mu}m$-pitch was successfully fabricated without non-uniform pattern shape by electroplating copper and coating polyimide on patterned stainless steel. For multi-layer flexible substrate, via holes were drilled by UV laser and filled with electroplating copper and tin. And then, the PI layer with vias and conductor lines was stripped from stainless steel substrate. The PI layers were laminated at once with careful alignment between layers. Solid state reaction between tin and copper during lamination formed the intermetallic compounds of $Cu_6Sn_5$($\eta$-phase) and $Cu_3Sn$($\epsilon$-Phase) and achieved a complete inter-connection by vertically positioning the plugged via holes on via pad. The via formation process has several advantages; such as better electrical property and lower cost than V type via and paste via.

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COF(Chip On Film)에서의 Polyimide/Buffer layer/Cu 접착력 향상

  • 이재원;김상호;이지원;홍순성
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2004.05a
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    • pp.101-107
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    • 2004
  • 각종 전자기기의 소형화, 고성능화 요구에 따라 회로 또는 기판의 고집적화에 따른 대안으로 도입된 COF(Chip On Film)공정에서 PI(polyimide)/buffer layer/Cu의 접착력 개선을 목적으로 본 연구가 진행 되었다. 그리고 buffer layer로써 Cr을 증착 할 때 부착력의 개선을 목적으로 개질처리를 할 때는 RF plasma장비를 사용하였다. 실험 변수로는 peel strength에 대한 buffer layer의 종류와 증착시간, 표면 개질처리시 $O_2$/Ar비이다. Buffer layer의 종류에 따른 접착력은 Cr보다 Ni이 우수하였고 peel strength와 Cu THK는 같은 buffer layer의 증착 structure에서 비례 관계를 나타냈으며, Cr의 증착 시간과 Cu의 증착 시간을 변수로 peel strength test한 값은 Cr증착시간이 30초, Cu증착시간이 20분일때 40g/mm로 최적의 접착력이 나타났다. 증착전 PI의 개질 처리시 $O_2$/Ar 유량비에 따른 peel strength값은 $O_2$/Ar유량비가 증가 할수록 향상되었으며, 2/5에서 최고값인 58g/mm가 나타났다. 그 이상에서는 오히려 감소하였다.

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Fabrication of Flexible CIGS thin film solar cells using Polyimide substrate (Polyimide 기판을 이용한 Flexible CIGS 박막 태양전지 제조)

  • Jung, Seung-Chul;Ahn, Se-Jin;Yun, Jae-Ho;Gwak, Ji-Hye;Kim, Do-Jin;Yoon, Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.153-155
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    • 2009
  • In this study, we fabricated the $Cu(In,Ga)Se_2$ (CIGS) thin-film solar cells by using a polyimide substrate. The CIGS thin-film was deposited on Mo coated polyimide substrate by a 3-stage co-evaporation technique. Because the polyimide shows thermal transformation at about $400^{\circ}C$, the substrate temperature of co-evaporation process was set to below $400^{\circ}C$. Corresponding solar cell showed a conversion efficiency of 7.08 % with $V_{OC}$ of 0.58 V, $J_{SC}$ of 24.99 $mA/cm^2$ and FF of 0.49.

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The Effects of Electrolyte Compositions on the Property of Copper Electrodeposited Layer (구리전착층의 물성에 미치는 전해액 조성의 영향)

  • Park, Eun-Kwang;Lee, Man-Hyung;Woo, Tae-Gyu;Park, Il-Song;Jung, Kwang-Hee;Seol, Kyeong-Won
    • Korean Journal of Metals and Materials
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    • v.47 no.11
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    • pp.740-747
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    • 2009
  • The purpose of this study is to identify the effect of electrolyte compositions on electrodeposited copper foil. First of all, the polyimide substrate was pretreated with plasma. Finally, copper foil was deposited on a Cu/Ni/Polyimide substrate using the electroplating technique. As the quantity of Cu increased, preferred orientations changed into (111). Increasing sulfuric acid, on the other hand, brought down the preferred orientation of (111). The lowest sheet resistance, surface roughness, and fine adhesion were detected when the ratio of $Cu^{2+}$ and $H_2SO_4$ is 50:50(g/l).