• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.464-467
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• 2005

BiSrCaCuO superconducting ceramic thick films were fabricated by chemical process. The x ray diffraction pattern of the BiSrCaCuO thick films contained 110 K phase. The critical temperature of BiSrCaCuO thick films were Tc=95 K-97 K. The critical temperature and critical density of BiSrCaCuO thick film grown at $750 {\circ}C$ were Tc = 95 K and $Jc= 7{\times}10^{6} A/cm^{2}$ We obtained high-Jc as-grown BiSrCaCuO on an MgO substrate by low fressure CVD.

• Korean Journal of Materials Research
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• v.30 no.3
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• pp.105-110
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• 2020

Cu/PET composite films are widely used in a variety of wearable electronics. Lifetime of the electronics is determined by adhesion between the Cu film and the PET substrate. The formation of an anisotropic nanostructure on the PET surface by surface modification can enhance Cu/PET interfacial adhesion. The shape and size of the anisotropic nanostructures of the PET surface can be controlled by varying the surface modification conditions. In this work, the effect of Cu/PET interface nanostructures on the failure mechanism of a Cu/PET flexible composite film is studied. From observation of the morphologies of the anisotropic nanostructures on plasma-treated PET surfaces, and cross-sections and surfaces of the fractured specimens, the Cu/PET interface area and nanostructure width are analyzed and the failure mechanism of the Cu/PET film is investigated. It is found that the failure mechanism of the Cu/PET flexible composite film depends on the shape and size of the plasmatreated PET surface nanostructures. Cu/PET interface nanostructures with maximal peel strength exhibit multiple craze-crack propagation behavior, while smaller or larger interface nanostructures exhibit single-path craze-crack propagation behavior.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.60-64
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• 2023

In this study, the electrical contact resistance characteristics between graphene and metals, which is one of important factors for the performance of graphene-based devices, were compared. High-quality graphene was synthesized by chemical vapor deposition (CVD) method, and Al, Cu, Ni, and Ti as electrode materials were deposited on the graphene surface with equal thickness of 50 nm. The contact resistances of graphene transferred to SiO₂/Si substrates and metals were measured by the transfer length method (TLM), and the average contact resistances of Al, Cu, Ni, and Ti were found to be 345 Ω, 553 Ω, 110 Ω, and 174 Ω, respectively. It was found that Ni and Ti, which form chemical bonds with graphene, have relatively lower contact resistances compared to Al and Cu, which have physical adsorption properties. The results of this study on the electrical properties between graphene and metals are expected to contribute to the realization of high-performance graphene-based devices including electronics, optoelectronic devices, and sensors by forming low contact resistance with electrodes.

• Journal of Powder Materials
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• v.5 no.2
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• pp.145-153
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• 1998

W-Cu alloy is attractive to thermal managing materials in microelectronic devices because of its good thermal properties. The metal injection molding (MIM) of W-Cu systems can satisfy the need for mass production of the complex shaped W-Cu parts in semiconductor devices. In this study, the application of MIM process of the mechanically alloyed (MA) W-Cu composite powders, which had higher sinterability were investigated. The MA W-Cu powders and reduction treated (RT) powders were injected by using of the multicomponent binder system. The multi-stage debinding cycles were adopted in $N_2$ and $H_2$ atmosphere. The isostatic repressing treatment was carried out in order to improve the relative density of brown parts. The brown part of RT W-Cu composite powder sintered at 110$0^{\circ}C$ had shown the higher sinterability compared to that of MA powder. The relative sintered density of all specimens increased to 96% by sintering at 120$0^{\circ}C$ for 1 hour. The relationship between green density and the sintering behavior of MA W-Cu composite powder was analyzed and discussed on the basis of the nanostructured characteristics of the MA W-Cu composite powder.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.356-360
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• 2011

Indium oxide ($In_2O_3$) single layer and $In_2O_3$/copper (Cu) bi-layer films were prepared on glass substrates by RF and DC magnetron sputtering without intentional substrate heating. In order to determine the effect of the Cu bottom layer on the optical, electrical and structural properties of $In_2O_3$ films, 3-nm-thick Cu film was deposited on the glass substrate prior to deposition of the $In_2O_3$ films. As-deposited $In_2O_3$ films had an optical transmittance of 79% in the visible wavelength region and a sheet resistance of 2,300 ${\Omega}/{\square}$, while the $In_2O_3$/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. $In_2O_3$/Cu films had a lower sheet resistance of 110 ${\Omega}/{\square}$ and an optical transmittance of 71%. Based on the figure of merit, it can be concluded that the Cu bottom layer effectively increases the performance of $In_2O_3$ films for use as transparent conducting oxides in flexible display applications.

• Journal of radiological science and technology
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• v.38 no.4
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• pp.355-363
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• 2015

Advancement in the medical field provides an opportunity for the development of medical equipment and also enable accurate diagnosis for the inspection and the treatment of diseases. The aging of equipment due to the frequent operation produce uncertainty in the patient exposure dose, so a quality control was implemented by establishing a safety management system on a regular basis. The x-ray tube voltage (kVp), which is directly involved in the patient exposure dose and the life of the equipment, needs periodic performance for the quality control, but it has a limitation due to the time and the cost. In this study, we proposed a new method for measuring the kVp with ease by using the Y and Cu to solve the problem of the time and cost. We also evaluated the usefulness and the effectiveness of the new method and its accuracy through the kVp measurement. After securing the condition, the amount of the tube current and evaluating the usefulness and effectiveness of kVp measured using Y and Cu. The density range used was at 0.5-1.0, kVp was in the range of ${\pm}10%$, then, we recorded the change in concentration as % of Y and Cu. This experiment showed that when Cu and Y was at 75 kVp, concentration was the same, and when the kVp was changed to 65 ~ 85 %, a gradual increase in concentration to 85 ~ 110 % was noted.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1998.06a
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• pp.140-147
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• 1998

The texture evolution by deep drawing was investigated and the lattice rotation rate was predicted using rate sensitive model with full constraints boundary conditions. The calculated textures show different behaviors with the amount of the flange deformation and initial crystal orientations. Among the crystal orientations located parallel to RD, the crystal orientations around the D component rotated toward the Cu component, the crystal orientations along the ${\alpha}$ fiber rotated toward the {110}<001> and {110}<111> components during deep drawing. In the case of the part parallel to 45$^{\circ}$ with respect to RD, the crystal orientations around the D component rotated about ND and the crystal orientations along the ${\alpha}$ fiber also rotated toward the (110)[23] and (110)[27] components about ND. In the part parallel to TD, the crystal orientations around the D component rotated toward the Rotated Cube and the crystal orientations along the ${\alpha}$ fiber rotated toward the {110}<113> component.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.110-113
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• 2005

Ozone is useful oxidizing gas for the fabrication of BSCCO thin films. In order to obtain high quality oxide BSCCO thin films, higher ozone concentration is necessary. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• Transactions of the Korean hydrogen and new energy society
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• v.30 no.2
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• pp.103-110
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• 2019

Cu-Zn-Al catalysts were prepared via co-precipitation method for low-temperature water-gas shift (LT-WGS) reaction under practical reaction condition. Aging time was systematically changed to find optimum point for LT-WGS under practical condition. The Cu-Zn-Al catalyst aged for 72 hours showed the highest CO conversion within low-temperature range as well as very stable catalytic activity for 200 hours despite the practical reaction condition.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.307-313
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• 2005

Electromigration behavior in the Sn96.5Ag3.0Cu0.5 solder lines was investigated and compared Sn96.5Ag3.0Cu0.5 with eutectic SnPb. Measurements were made for relevant parameters for electromigration of the solder, such as drift velocity, threshold current density, activation energy, as well as the product of diffusivity and effective charge number (DZ$\ast$). The threshold current density were measured to be $2.38{\times}10^4A/cm^2$ at $140^{\circ}C$ and the value represented the maximum current density which the SnAgCu solder can carry without electromigration damage at the stressing temperatures. The electromigration energy was measured to 0.56 eV in the temperature range of $110-160^{\circ}C$. The measured products of diffusivity and the effective charge number, DZ$\ast$ were $3.12{\times}10^{-10} cm^2/s$ at $110^{\circ}C$, $4.66{\times}10^{-10} cm^2/s$ at $125^{\circ}C$, $8.76{\times}10^{-10} cm^2/s$ at $140^{\circ}C$, $2.14{\times}10^{-9}cm^2/s$ at $160^{\circ}C$ SnPb solder existed incubation stage, while SnAgCu did not have incubation stage. It was thought that the diffusion mechanism of SnAgCu was different from that of SnPb.