• 제목/요약/키워드: Crystallinity value

검색결과 184건 처리시간 0.026초

Hot Wall법에 의한 ZnS 박막의 제작과 특성 (Growth and Characterization of ZnS Thin Films by Hot Wall Method)

  • 이상태
    • 한국항해항만학회지
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    • 제26권1호
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    • pp.120-126
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    • 2002
  • ZnS 박막을 Hot W긴 법에 의해 증발관 온도, 기판온도 및 외부로부터 유황(5)의 공급을 변수로 하여 제작하여 광학적, 결정 구조적 특성을 분석 ·검토하였다 박막의 증착속도는 증발관 온도 및 5 증기압을 높일수록 증가하였으나 기관온도를 높이면 급격히 감소하였다. 박막의 광학적 특성은 증착속도와 밀접하게 관계하고 있다고 사료되며, 실온에서의 금지대 폭은 이론 값보다 작은 3.46∼3.72ev를 나타내어 결정 중에 결함이 존재함을 알 수 있었다. 박막의 구조를 분석한 결과 어느 경우에 있어서나 섬아연광 구조의 (111) 주 배향성을 나타내었으나 회절피크의 강도 및 반치폭으로부터 결정성은 대체로 양호하지 못했음을 알았다. 그러나, 기판온도 또는 5 공급 등의 제작조건에 따라 광학적, 결정적 특성이 개선되었다.

Low-temperature Epitaxial Growth of a Uniform Polycrystalline Si Film with Large Grains on SiO2 Substrate by Al-assisted Crystal Growth

  • Ahn, Kyung Min;Kang, Seung Mo;Moon, Seon Hong;Kwon, HyukSang;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • 제1권2호
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    • pp.103-108
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    • 2013
  • Epitaxial growth of a high-quality thin Si film is essential for the application to low-cost thin-film Si solar cells. A polycrystalline Si film was grown on a $SiO_2$ substrate at $450^{\circ}C$ by a Al-assisted crystal growth process. For the purpose, a thin Al layer was deposited on the $SiO_2$ substrate for Al-assisted crystal growth. However, the epitaxial growth of Si film resulted in a rough surface with humps. Then, we introduced a thin amorphous Si seed layer on the Al film to minimize the initial roughness of Si film. With the help of the Si seed layer, the surface of the epitaxial Si film was smooth and the crystallinity of the Si film was much improved. The grain size of the $1.5-{\mu}m$-thick Si film was as large as 1 mm. The Al content in the Si film was 3.7% and the hole concentration was estimated to be $3{\times}10^{17}/cm^3$, which was one order of magnitude higher than desirable value for Si base layer. The results suggest that Al-doped Si layer could be use as a seed layer for additional epitaxial growth of intrinsic or boron-doped Si layer because the Al-doped Si layer has large grains.

고속방사 PET filament의 열처리에 따른 수축 및 Creep 거동에 관한 연구 (Shrinkage and Creep Behavior of Annealed PET Filament in High Speed Spinning)

  • Park, Young-Kun;Koo, Ja-Gil;Chang, Dong-Ho
    • 한국염색가공학회지
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    • 제9권4호
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    • pp.7-19
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    • 1997
  • The purpose of the study was to investigate the shrinkage and creep behavior of PET filaments which were prepared at various spinning speeds(3,300, 4,000, 5,000, 6,000, and 7,000m/min) and anneal($120^{\circ}$, 30min & $150^{\circ}$, 40min). In order to determine the shrinkage and creep behavior with the crystallinity change, PET filaments were treated with low(12$0^{\circ}C$, 30min) and high($150^{\circ}$, 40min) temperature conditions with hot air dryer under the constant tension. The results of the study were as follows: as the spinning speed increased, the degree of shrinkage and elongation of the sample treated by wet condition decreased. The sample with 0.01g/d of load under various spinning speeds showed shrinkage behavior and highest shrinkage ratio at $76^{\circ}$ which was Tg of PET. The degree of shrinkage and elongation of the treated sample was less than those of the untreated sample by wet treatment. Especially, there was less degree of shrinkage and elongation of the sample treated by higher temperature condition. In 3,300m/min of spinning speed the draw ratio of undrawn yarn of a mixture of a-axis orientation and c-axis orientation was 2.0, which is similar to the value of the traditional drawn yarn. Finally, there was a big range of shrinkage and elongation by wet treatment in 3,300 m/min of spinning speed.

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세척시 섬유의 음이온계 계면활성제 흡착과 헹구기 효과에 관한 연구 (A Study on the Adsorption of Anionic Surfactant by Various Textile Fibers and Rinsing Efficiency in Washing Process)

  • 박선경;김성련
    • 한국의류학회지
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    • 제17권1호
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    • pp.129-136
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    • 1993
  • Authors have studied the adsorption of anionic surfactant from detergent solutions on cotton fabric during washing process and have measured the concentration of the residual surfactant in rinsing solution. The relations with temperature and pre-soaking time to rinsing process have been studied. The adsorption of sodium dodecylbenzene sulfonate by various textile fibers has also been investigated. The results of this study are; 1. Three times rinsing is sufficient as, without pre-soaking, the concentration of the surfactant on fabric is stable from that time on. 2. The rinsing efficiency increases with temperature; at $25^{\circ}C$, $40^{\circ}C$, and $55^{\circ}C$, the concentrations of surfactant on the fabric after-rinsing are 68, 59, 51 mg/100 g of fiber respectively. 3. The longer the pre-soaking time, the lower the rinsing efficiency is; the 4hrs presoaked fabric shows increased surfactant concentration than the one without-soaking. And the increment is 35.8%. 4. The adsorption of sodium dodecylbenzene sulfonate on fabrics differs greatly with the chemical nature of the fiber; wool, silk and nylon which are thought to be ionic-adsorbants shows greater adsorption. 5. The adsorption of surfactant is more affected by the ionic character than the physical one, and the one with higher crystallinity such as cotton and polyester shows lower value than rayon or acetate.

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Pressure Sensing Properties of AlN Thin Films Sputtered at Room Temperature

  • Seok, Hye-Won;Kim, Sei-Ki;Kang, Yang-Koo;Lee, Youn-Jin;Hong, Yeon-Woo;Ju, Byeong-Kwon
    • 센서학회지
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    • 제23권2호
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    • pp.94-98
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    • 2014
  • Aluminum nitride (AlN) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 25~75% $N_2$ /Ar. The characterization of film properties were performed using surface profiler, X-ray diffraction, X-ray photoelectron spectroscopy(XPS), and pressure-voltage measurement system. The deposition rates of AlN films were decreased with increasing the $N_2$ concentration owing to lower mass of nitrogen ions than Ar. The as-deposited AlN films showed crystalline phase, and with increasing the $N_2$ concentration, the peak of AlN(100) plane and the crystallinity became weak. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. But in the case of 50% $N_2$ /Ar condition, the peak of (002) plane, which is determinant in pressure sensing properties, appeared. XPS depth profiling of AlN/TiN/SUS430 revealed Al/N ratio was close to stoichiometric value (45:47) when deposited under 50% $N_2/Ar$ atmosphere at room temperature. The output signal voltage of AlN sensor showed a linear behavior between 26~85 mV, and the pressure-sensing sensitivity was calculated as 7 mV/MPa.

다결정 실리콘 박막 위에 P이온 샤워 도핑 후 열처리 방법에 따르는 도펀트 활성화 및 결함 회복에 관한 효과 (The Effect of Annealing Methods on Dopant Activation and Damage Recovery of Phosphorous ion Shower Doped Poly-Si)

  • 김동민;노재상;이기용
    • 전기화학회지
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    • 제8권1호
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    • pp.24-31
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    • 2005
  • Ion-Shower-Doping장비 및 $PH_/3M_2$혼합 가스를 사용하여 Phosphorous를 ELA방법으로 제조된 Poly-Si에 가속 전압 및 조사량을 변수로 이온 주입하였다. As-implanted된 시편의 결정도는 UV-transmittance spectroscopy를 사용하여 측정하였다. 이 때 UV-transmittance를 이용하여 측정한 값은 Raman spectroscopy를 이용해서 측정한 값과 서로 관련되어 있음을 알았다. 면 저항은 가속전압이 1kV에서 15kV까지 증가함에 따라 감소한다 그러나 가혹한 도핑조건하에서는 가속전압의 증가 시 면 저항이 증가한다. 이는 활성화 열처리 후 치유되지 않은 결함에 의해 전자가 포획되며 이에 따라 전하 운반자의 농도가 감소하는 때문이다. 활성화 열처리는 로열처리, RTA 열처리, ELA 열처리 등의 방법으로 수행하였고 열처리 방법에 따르는 도펀트의 활성화 및 결함의 회복의 거동을 연구하였다

CuInGaSe2 태양전지용 Mo 후면 전극의 조직 및 전기광학적 특성 (Morphology and Electro-Optical Property of Mo Back Electrode for CuInGaSe2 Solar Cells)

  • 채수병;김명한
    • 한국재료학회지
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    • 제20권8호
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    • pp.412-417
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    • 2010
  • Mo thin films were used for the back electrode because of the low resistivity in the Mo/$CuInGaSe_2$ contact in chalcopyrite solar cells. $1\;{\mu}m$ thick Mo thin films were deposited on soda lime glass by varying the Ar pressure with the dc-magnetron sputtering process. The effects of the Ar pressure on the morphology of the Mo back electrode were studied and the relationships between the morphology and electro-optical properties, namely, the resistivity as well as the reflectance of the Mo thin films, were investigated. The resitivity increased from $24\;{\mu}{\Omega}{\cdot}cm$ to $11833\;{\mu}{\Omega}{\cdot}cm$; this was caused by the increased surface defect and low crystallinity as the Ar pressure increased from $3{\times}10^{-3}$ to $3{\times}10^{-2}\;Torr$. The surface morphologies of the Mo thin films changed from somewhat coarse fibrous structures to irregular and fine celled structures with increased surface cracks along the cell boundaries, as the Ar pressure increased from $3{\times}10^{-3}$ to $3{\times}10^{-2}\;Torr$. The changes of reflectances in the visible light range with Ar pressures were mainly attributed to the surface morphological changes of the Mo thin films. The reflectance in the visible light range showed the highest value of 45% at $3{\times}10^{-3}\;Torr$ and decreased to 18.5% at $3{\times}10^{-2}\;Torr$.

RF 마그네트론 스퍼터링 방법으로 제조한 (Ba,Sr)TiO$_3$ 박막의 유전 및 초전특성 (Dielectric and Pyroelectric Prooperties of (Ba,Sr)TiO$_3$ Thin Films Grown by RF Magntron Sputtering)

  • 박재석;김진섭;이정희;이용현;한석룡;이재신
    • 한국세라믹학회지
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    • 제36권4호
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    • pp.403-409
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    • 1999
  • RF 마그네트론 스퍼터링방법으로 Pt/Ti/NON/Si 기판 위에 $Ba_{0.66}$$Sr_{0.38}$$TiO_{3}$(BST) 박막을 증착한 다음 유전 및 초전특성을 살펴보았다. BST 박막을 증착할 때 기판온도를 300~-$600^{\circ}C$로 변화시킨 결과 기판온도가 증가할수록 박막의 결정성과 입도가 증가하여 유전율과 초전계수가 증가하였다. 한편 하부전극인 Pt의 증착조건이 BST 박막의 몰성에 미치는 영향도 살펴보았다. Pt의 증착온도와 Pt의 미세구조와 결정성뿐만 아니라 상부에 형성된 BST 박막의 배향성에도 큰 영향을 미쳤으며, 그 결과 BST의 초전특성에도 큰 영향을 미쳤다. BST 박막과 Pt 하부전극의 증착조건을 적정화함으로써 본 연구에엇는 상온에서 초전계수가 240 $nCcm^{-2}K^{-1}$인 BST 박막을 얻었다.

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개조된 MOCVD법으로 성장한 Bi2Te3 박막의 기판온도에 따른 열전 특성 (Thermoelectric Properties of Bi2Te3 Films Grown by Modified MOCVD with Substrate Temperatures)

  • 유현우;권오정;김광천;최원철;박찬;김진상
    • 한국전기전자재료학회논문지
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    • 제24권4호
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    • pp.340-344
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    • 2011
  • Thermoelectric bismuth telluride ($Bi_2Te_3$) films were deposited on $4^{\circ}$ off oriented (001) GaAs substrates using a modified metal organic chemical vapor deposition (MOCVD) system. The effects of substrate temperature on surface morphologies, crystallinity, electrical properties and thermoelctric properties were investigated. Two dimensional growth mode (2D) was observed at substrate temperature lower than $400^{\circ}C$. However, three dimensional growth mode (3D) was observed at substrate temperature higher than $400^{\circ}C$. Change of growth mechanism from 2D to 3D was confirmed with environmental scanning electron microscope (E-SEM) and X-ray diffraction analysis. Seebeck coefficients of all samples have negative values. This result indicates that $Bi_2Te_3$ films grown by modified MOCVD are n-type. The maximum value of Seebeck coefficient was -225 ${\mu}V/K$ and the power factor was $1.86{\times}10^{-3}\;W/mK^2$ at the substrate temperature of $400^{\circ}C$. $Bi_2Te_3$ films deposited using modified MOCVD can be used to fabricate high-performance thermoelectric devices.

Post Annealing Effects on Iron Oxide Nanoparticles Synthesized by Novel Hydrothermal Process

  • Kim, Ki-Chul;Kim, Young-Sung
    • Journal of Magnetics
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    • 제15권4호
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    • pp.179-184
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    • 2010
  • We have investigated the effects of post annealing on iron oxide nanoparticles synthesized by the novel hydrothermal synthesis method with the $FeSO_4{\cdot}7H_2O$. To investigate the post annealing effect, the as-synthesized iron oxide nanoparticles were annealed at different temperatures in a vacuum chamber. The morphological, structural and magnetic properties of the iron oxide nanoparticles were investigated with high resolution X-ray powder diffraction (XRD), high resolution transmission electron microscopy (HRTEM), Mossbauer spectroscopy, and vibrating sample magnetometer analysis. According to the XRD and HRTEM analysis results, as-synthesized iron oxide nanoparticles were only magnetite ($Fe_3O_4$) phase with face-centered cubic structure but post annealed iron oxide nanoparticles at $700^{\circ}C$ were mainly magnetite phase with trivial maghemite ($\gamma-Fe_2O_3$) phase which was induced in the post annealing treatment. The crystallinity of the iron oxide nanoparticles is enhanced by the post annealing treatment. The particle size of the as-synthesized iron oxide nanoparticles was about 5 nm and the particle shape was almost spherical. But the particle size of the post annealed iron oxide nanoparticles at $700^{\circ}C$ was around 25 nm and the particle shape was spherical and irregular. The as-synthesized iron oxide nanoparticles showed superparamagnetic behavior, but post annealed iron oxide nanoparticles at $700^{\circ}C$ did not show superparamagnetic behavior due to the increase of particle size by post annealing treatment. The saturation of magnetization of the as-synthesized nanoparticles, post annealed nanoparticles at $500^{\circ}C$, and post annealed nanoparticles at $700^{\circ}C$ was found to be 3.7 emu/g, 6.1 emu/g, and 7.5 emu/g, respectively. The much smaller saturation magnetization value than one of bulk magnetite can be attributed to spin disorder and/or spin canting, spin pinning at the nanoparticle surface.