• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1261-1262
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• 2008

Laser-based crystallization techniques are ideally-suited for forming high-quality crystalline Si films on active-matrix display backplanes, because the highly-localized energy deposition allows for transformation of the as-deposited a-Si without damaging high-temperature-intolerant glass and plastic substrates. However, certain significant and non-trivial attributes must be satisfied for a particular method and implementation to be considered manufacturing-worthy. The crystallization process step must yield a Si microstructure that permits fabrication of thin-film transistors with sufficient uniformity and performance for the intended application and, the realization and implementation of the method must meet specific requirements of viability, robustness and economy in order to be accepted in mass production environments. In recent years, Low Temperature Polycrystalline Silicon (LTPS) has demonstrated its advantages through successful implementation in the application spaces that include highly-integrated active-matrix liquid-crystal displays (AMLCDs), cost competitive AMLCDs, and most recently, active-matrix organic light-emitting diode displays (AMOLEDs). In the mobile display market segment, LTPS continues to gain market share, as consumers demand mobile devices with higher display performance, longer battery life and reduced form factor. LTPS-based mobile displays have clearly demonstrated significant advantages in this regard. While the benefits of LTPS for mobile phones are well recognized, other mobile electronic applications such as portable multimedia players, tablet computers, ultra-mobile personal computers and notebook computers also stand to benefit from the performance and potential cost advantages offered by LTPS. Recently, significant efforts have been made to enable robust and cost-effective LTPS backplane manufacturing for AMOLED displays. The majority of the technical focus has been placed on ensuring the formation of extremely uniform poly-Si films. Although current commercially available AMOLED displays are aimed primarily at mobile applications, it is expected that continued development of the technology will soon lead to larger display sizes. Since LTPS backplanes are essentially required for AMOLED displays, LTPS manufacturing technology must be ready to scale the high degree of uniformity beyond the small and medium displays sizes. It is imperative for the manufacturers of LTPS crystallization equipment to ensure that the widespread adoption of the technology is not hindered by limitations of performance, uniformity or display size. In our presentation, we plan to present the state of the art in light sources and beam delivery systems used in high-volume manufacturing laser crystallization equipment. We will show that excimer-laser-based crystallization technologies are currently meeting the stringent requirements of AMOLED display fabrication, and are well positioned to meet the future demands for manufacturing these displays as well.

• 한국세라믹학회지
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• 제52권6호
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• pp.410-416
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• 2015

Recently, a new $Y_2O_3$ coating deposited using the EB-PVD method has been developed for erosion resistant applications in fluorocarbon plasma environments. In this study, surface crack formation in the $Y_2O_3$ coating has been analyzed in terms of residual stress and elastic modulus. The coating, deposited on silicon substrate at temperatures higher than $600^{\circ}C$, showed itself to be sound, without surface cracks. When the residual stress of the coating was measured using the Stoney formula, it was found to be considerably lower than the value calculated using the elastic modulus and thermal expansion coefficient of bulk $Y_2O_3$. In addition, amorphous $SiO_2$ and crystalline $Al_2O_3$ coatings were similarly prepared and their residual stresses were compared to the calculated values. From nano-indentation measurement, the elastic modulus of the $Y_2O_3$ coating in the direction parallel to the coating surface was found to be lower than that in the normal direction. The lower modulus in the parallel direction was confirmed independently using the load-deflection curves of a micro-cantilever made of $Y_2O_3$ coating and from the average residual stress-temperature curve of the coated sample. The elastic modulus in these experiments was around 33 ~ 35 GPa, which is much lower than that of a sintered bulk sample. Thus, this low elastic modulus, which may come from the columnar feather-like structure of the coating, contributed to decreasing the average residual tensile stress. Finally, in terms of toughness and thermal cycling stability, the implications of the lowered elastic modulus are discussed.

• 한국산업보건학회지
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• 제7권2호
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• pp.196-208
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• 1997

This study was performed to estimate quartz contents in the both bulk and airborne dust samples and to determine particle size distribution of airborne dust from the selected foundry operations. Total dust samples were collected by a 37mm cassette and respirable by a 10 mm nylon cyclone. Particle size distributions were determined by a Marple's 8-stage cascade impactor at the melting, molding, shakeout and finishing operations. The presence of elements in the dust samples were confirmed by the scanning electron microscopy equipped with the energy dispersive x-ray spectrometry. The quartz contents were estimated using the intensity of the absorption peak of quartz at 799 cm-l by the Fourie Transformed Infrared Spectroscopy (FTIR). The results were as follows: 1. The analysis of data from cascade Impactor showed bimodal distributions of particle size at the melting, molding and shakeout operations. Mass median aerodynamic diameters for the distributions determined by histogram were $0.48-1.65{\mu}m$ for small and $13.43-19.58{\mu}m$ for large modes. In the dust samples collected at the finishing operations, however, only a large mode of $18.89{\mu}m$ was found. 2. The percentages of total to respirable dust concentration calculated from the impactor data ranged from 42 % to 66 %. The average concentrations of respirable dust by cyclone were $0.85-1.28mg/m^3$ collected from the workers, and were $0.23-0.56mg/m^3$ from the areas surveyed. Dust concentrations of personal samples were statistically significantly higher than those of area samples. The highest dust concentration was obtained from the personal samples of the finishing operation. 3. The mean percentages of silicon and oxygen estimated by SEM-EDXA in the bulk samples ranged from 35.83 % to 36.02 % and from 39.93 %-41.64 %, respectively. 4. The average quartz contents estimated by FTIR in the respirable dust from personal samples ranged from 4.32 % to 5.36 % and 4.54 % to 4.70 % in the bulk samples. No statistical difference of quartz content was found between foundry operations. In this study, quartz content was quantified by FTIR. Although no statistically significant difference in quartz content between airborne and bulk, samples and between different foundry operations was found, it is recommended that quartz content in the individual sample of respirable dust be analyzed and the results be used either to select an applicable quartz limits or to calculate the exposure limit. Further studies, however, are needed to compare the results by FTIR and XRD since it is reported that the quartz content determined by FTIR is different from that by XRD.

• 한국태양에너지학회 논문집
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• 제37권2호
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• pp.77-85
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• 2017

Thin crystalline silicon (C-Si) solar cell is expected to be a low price energy source by decreasing the consumption of Si. However, thin c-Si solar cell entails the bowing and crack issues in high temperature manufacturing process. Thus, the conventional tabbing process, based on high temperature soldering (> $250^{\circ}C$), has difficulties for applying to thin c-Si solar cell modules. In this paper, a conductive paste (CP) based interconnection process has been proposed to fabricate thin c-Si solar cell modules with high production yield, instead of existing soldering materials. To optimize the process condition for CP based interconnection, we compared the performance and stability of modules fabricated under various lamination temperature (120, 150, and $175^{\circ}C$). The power from CP based module is similar to that with conventional tabbing process, as modules are fabricated. However, the output of CP based module laminated at $120^{\circ}C$ decreases significantly (14.1% for Damp heat and 6.1% for thermal cycle) in harsh condition, while the output drops only in 3% in the samples process at $150^{\circ}C$, $175^{\circ}C$. The peel test indicates that the unstable performance of sample laminated at $120^{\circ}C$ is attributed to weak adhesion strength (1.7 N) between cell and ribbon compared to other cases (2.7 N). As a result, optimized lamination temperature for CP based module process is $150^{\circ}C$, considering stability and energy consumption during the fabrication.

• 한국재료학회지
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• 제27권10호
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• pp.518-523
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• 2017

In commercial solar cells, the pattern of the front electrode is critical to effectively assemble the photo generated current. The power loss in solar cells caused by the front electrode was categorized as four types. First, losses due to the metallic resistance of the electrode. Second, losses due to the contact resistance of the electrode and emitter. Third, losses due to the emitter resistance when current flows through the emitter. Fourth, losses due to the shading effect of the front metal electrode, which has a high reflectance. In this paper, optimizing the number of finger on a $4{\times}4$ solar cell is demonstrated with known theory. We compared the short circuit current density and fill factor to evaluate the power loss from the front metal contact calculation result. By experiment, the short circuit current density($J_{sc}$), taken in each pattern as 37.61, 37.53, and $37.38mA/cm^2$ decreased as the number of fingers increased. The fill factor(FF), measured in each pattern as 0.7745, 0.7782 and 0.7843 increased as number of fingers increased. The results suggested that the efficiency(Eff) was measured in each pattern as 17.51, 17.81, and 17.84 %. Throughout this study, the short-circuit current densities($J_{sc}$) and fill factor(FF) varied according to the number of fingers in the front metal pattern. The effects on the efficiency of the two factors were also investigated.

• 한국재료학회지
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• 제30권10호
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• pp.566-572
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• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• 한국결정성장학회지
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• 제22권2호
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• pp.92-98
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• 2012

이온이 첨가된 BCP(biphasic calcium phosphate) 분말을 제조하기 위하여 $Ca(NO_3)_2{\cdot}4H_2O$, $(NH_4)_2HPO_4$를 출발 물질로 공침법(co-precipitation process)을 이용하여 합성하였다. Si-BCP 합성을 위하여 TEOS를 Mg-BCP 합성을 위해서는 $Mg(NO_3)_2{\cdot}6H_2O$를 사용하였다. 합성된 분말의 열처리 후 결정상을 분석한 결과 HAp와 ${\beta}$-TCP가 혼재된 상을 관찰할 수 있었다. 분광학적 분석에서도 인산칼슘의 $PO^{3-}_4$와 $OH^-$ 그룹에 해당하는 밴드도 관찰되었다. 이온이 첨가된 BCP 분말의 생체활성 거동을 평가하기 위하여 Hanks' Balanced Salt Solution(HBSS)에 침적시켜 시간에 따라 형상의 변화 및 결정상을 분석한 결과, 두 샘플 모두에서 빠른 표면 활성을 나타내었다. 세포 성장률 평가에서도 대조군에 비하여 세포성장률이 우수함을 관찰하였다.

• 자원리싸이클링
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• 제29권2호
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• pp.69-77
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• 2020

최근 급격히 증가하는 생산량과 설치로 태양광모듈의 재활용이 주요 이슈가 되고 있다. 연구 결과에 따르면, 폐 태양광모듈의 양은 2030년에는 약 8600톤에 달할 것으로 예상되며, 결정질 실리콘 태양광 모듈은 그 가운데 약 90%에 달할 것으로 예상하고 있다. 결정질 실리콘 태양광 모듈은 중량비로 약 1.3%의 태양광 리본을 함유하며, 이 태양광 리본은 태양광 모듈에 함유된 대다수의 납, 주석, 구리를 포함하는 것으로 알려져 있다. 이에 본 연구는 태양광 리본으로부터 유가금속을 분리하고자 시도되었다. 샘플 분석 결과 태양광 리본은 약 82.1% 구리, 8.9% 주석, 5.2% 납, 그리고 3.1% 은을 포함하는 것으로 확인되었다. 침출 실험은 3M 염산을 사용하였고, 침출 된 은 이온은 염화은의 할로겐 화합물로 회수되었다. 구리의 경우, Lix984N을 이용해 납과 주석으로부터 분리되었고, 3M의 황산을 이용해 스트리핑 되었다. 한편, 최적 조건하에서 구리 침출 효율은 약 99.64%이었다. 납과 주석의 경우, 수소이온 농도 조절을 통해 분리될 수 있었으며, 이 경우, 회수율은 약 99%이었다.

• 한국진공학회지
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• 제22권4호
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• pp.188-192
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• 2013

반도체 소자의 소형화, 고집적화로 박막의 다층화 및 선폭 감소로 인한 실리콘 웨이퍼와 금속 박막 사이의 확산을 방지하기 위한 많은 연구가 이루어지고 있다. 본 연구는 tungsten (W)을 주 물질로 증착시 nitrogen (N)의 유량을 2.5~10 sccm으로 변화시키며 증착된 확산방지막의 nano-mechanics 특성에 대해 연구하였다. 증착률, 비저항 및 결정학적 특성을 ${\beta}$-ray backscattering spectroscopy, 4-point probe, X-ray diffraction (XRD)을 이용하여 측정한 후 Nano-indenter를 사용하여 nano-mechanics 특성을 조사하였다. 그 결과 질소 가스 유량이 5 sccm 포함된 박막에서 표면 경도(surface hardness)는 10.07 에서 15.55 GPa로 급격하게 증가하였다. 이후 질소가스의 유량이 7.5 및 10 sccm에서는 표면 경도가 각각 12.65와 12.77 GPa로 질소 가스 유량이 5 sccm인 박막보다 표면경도가 상대적으로 감소하였다. 이는 박막 내 결정질과 비정질의 W과 N의 결합 비율의 차이에 의한 영향으로 생각되며, 또한 압축응력에 기인한 스트레스 증가가 원인으로 판단된다.

• 한국전기전자재료학회논문지
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• 제35권6호
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• pp.603-609
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• 2022

Passivation quality is mainly governed by epitaxial growth of crystalline silicon wafer surface. Void-rich intrinsic a-Si:H interfacial layer could offer higher resistivity of the c-Si surface and hence a better device efficiency as well. To reduce the resistivity of the contact area, a modification of void-rich intrinsic layer of a-Si:H towards more ordered state with a higher density is adopted by adapting its thickness and reducing its series resistance significantly, but it slightly decreases passivation quality. Higher resistance is not dominated by asymmetric effects like different band offsets for electrons or holes. In this study, multilayer of intrinsic a-Si:H layers were used. The first one with a void-rich was a-Si:H(I₁) and the next one a-SiO_x:H(I₂) were used, where a-SiO_x:H(I₂) had relatively larger band gap of ~2.07 eV than that of a-Si:H (I₁). Using a-SiO_x:H as I₂ layer was expected to increase transparency, which could lead to an easy carrier transport. Also, higher implied voltage than the conventional structure was expected. This means that the a-SiO_x:H could be a promising material for a high-quality passivation of c-Si. In addition, the i-a-SiO_x:H microstructure can help the carrier transportation through tunneling and thermal emission.