• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.217-217
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• 2012

Solution-processed tungsten oxide thin film with thickness of about 30 nm is prepared from ammonium tungstate. This layer is introduced into the interface between the poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) layer and the ITO electrode to be used as an electron blocking layer. The annealed tungsten oxide thin films at $150^{\circ}C$ and $300^{\circ}C$ show amorphous phase, while the $400^{\circ}C$ -annealed tungsten oxide film shows crystalline phase. At $150^{\circ}C$ annealing temperature, the conversion efficiency is significantly improved from 0.71% to 1.42% as the condition is changed from vacuum to air atmosphere, which is related to oxidation state of tungsten in amorphous phase. For the air annealing condition, the conversion efficiency is further increased from 1.42% to 2.01% as the temperature is increased from $150^{\circ}C$ to $300^{\circ}C$, which is mainly due to the removal of the chemisorbed water. However, a slight deterioration in photovoltaic performance is observed when the temperature is increased to $400^{\circ}C$, which is ascribed to poor electron blocking ability due to the formation of crystalline phase. It is concluded that $W^{6+}$ oxidation state and amorphous nature in tungsten oxide interlayer is essential for blocking electron effectively from the active layer to the ITO electrode.

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.19-24
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• 2019

In this study, the Ag nano-dots structure was applied to the textured wafer surface to improve the light trapping effect of crystalline silicon solar cell. The Ag nano-dots structure was formed by the annealing of Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The effect of light trapping was compared and analyzed through light reflectance measurements. The optimization process of the Ag nano-dots structure was made by varying the thickness of Ag thin film, the annealing temperature and time. The thickness of Ag thin films was in the range of 5 ~ 20 nm. The annealing temperature was in the range of 450~650℃ and the annealing time was in the range of 30 ~ 60 minutes. As a result, the light reflectance of 10 nm Ag thin film annealed at 650℃ for 30 minutes showed the lowest value of about 9.67%. This is a value that is about 3.37% lower than the light reflectance of the sample that has undergone only the texturing process. Finally, the change of the light reflectance by the HF treatment of the sample on which the Ag nano-dots structure was formed was investigated. The HF treatment time was in the range of 0 ~ 120 seconds. As a result, the light reflectance decreased by about 0.41% due to the HF treatment for 75 seconds.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.12-17
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• 2019

In this study, the Ag nano-dots structure and silicon nitride film were applied to the textured wafer surface to improve the light trapping effect of mono-crystalline silicon solar cell. Ag nano-dots structure was formed by performing a heat treatment for 30 minutes at 650℃ after the deposition of 10nm Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The silicon nitride film was deposited by a Hot-wire chemical vapor deposition. The effect of light trapping was compared and analyzed through light reflectance measurements. Experimental results showed that the reflectivity increased by 0.5 ~ 1% under all nitride thickness conditions when Ag nano-dots structure was formed before nitride film deposition. In addition, when the Ag nano-dots structure is formed after deposition of the silicon nitride film, the reflectance is increased in the nitride film condition of 70 nm or more. When the HF treatment was performed for 60 seconds to improve the Ag nano-dot structure, the overall reflectance was improved, and the reflectance was 0.15% lower than that of the silicon nitride film-only sample at 90 nm silicon nitride film condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.85-88
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• 2004

Mono-crystalline silicon(mono-Si) is both abundant in our environment and an excellent material for Si device applications. However, single crystalline silicon solar cell has been considered to be expensive for terrestrial applications. For that reason, the last few years have seen very rapid progress in the research and development activities of layer transfer(LT) processes. Thin film Si layers which can be detached from a reusable mono-Si wafers served as a substrate for epitaxial growth. The epitaxial films have a very high efficiency potential. LT technology is a promising approach to reduce fabrication cost with high efficiency at large scale since expensive Si substrate can be recycled. Low quality Si can be used as a substrate. Therefore, we propose one of the major technologies on fabricating thin film Si substrate using a LT. In this paper, we study the LT method using the electrochemical etching(ECE) and solid edge.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.589-589
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• 2012

Indium sulfide thin films have been grown onto glass substrates using radio frequency magnetron sputtering at room temperature. The as-deposited film were annealed in nitrogen atmosphere at different temperatures of 100, 200, 300, 400 and $500^{\circ}C$ with an 1 h annealing time. The effect of annealing temperature on composition, structure, morphology and optical properties of the as-grown In2S3 films has been studied. The XRD results indicate that the as-deposited films are composed by a mixture of both cubic ${\alpha}$ and ${\beta}$ crystalline phases, with some fraction of tetragonal phase. The thermal annealing on the films produces the conversion of the cubic crystalline phases to the tetragonal ${\beta}$ one and a crystalline reorientation of the latter phase. The surface morphological analysis reveals that the films grown at $300^{\circ}C$ have an average grain size of ~ 58 nm. These films show a S/In ratio of 0.99. The optical band gap is found to be direct and the films grown at $300^{\circ}C$ shows a higher optical transmittance of 80% and an energy band gap of 2.52 eV.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.111-113
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• 2009

This paper shows that you can achieve high quality N+ emitter layers using a screen printable phosphorous diffusion paste and firing in an infrared belt furnace. Spreading resistance measurement from a beveled sample is used to measure carrier concentration as a function of depth for different phosphorous concentrations. Contours of estimated sheet resistance are shown for different processing conditions. This paper describes newly developed low cost phosphorous pastes. It shows the characterization of the newly developed phosphorous paste (DP99-038). This low cost pastes can easily be printed and make 16% efficiency.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.114.1-114.1
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• 2011

Electrical sintering of the front electrode for crystalline silicon solar cells was performed applying a constant DC current to the printed lines. Conducting lines were printed on glass substrate by a drop-on-demand (DOD) inkjet printer and silver nanoparticle ink. Specific resistance and microstructure of sintered silver lines and were measured with varying DC current. To find the relation between temperature increase with changing applied current and specific resistance, temperature elevation was also calculated. Sintering process finished within a few milliseconds. Increasing applied DC current, specific resistance decreased and grain size increased after sintering. Achieved minimum specific resistance is approximately 1.7 times higher than specific resistance of the bulk silver.

• 한국태양에너지학회:학술대회논문집
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• 2008.04a
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• pp.98-103
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• 2008

The glass for crystalline PV module fabrication should have high thermal and mechanical resistance to environmental also have high transparency. In this paper, we analyze the optical characteristics of glasses for photovoltaic module application. The transmittance of several glasses are measured. The effects of texturing on low iron glass, glass thickness, anti-reflective glass, photocatalyst-treated glass and special glass are compared each other. Then this will give some information to select PV glass for manufacturing. The detailed analysis is described in the following paper.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.7.2-7.2
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• 2011

Photoelectrochemical solar cells such as dye-sensitized cells (DSSCs), which exhibit high performance and are cost-effective, provide an alternative to conventional p-n junction photovoltaic devices. However, the efficiency of such cells plateaus at 11~12%, in contrast to their theoretical value of 33%. The majority of research has focused on improving energy conversion efficiency of DSSC by controlling nanostructure and exploiting new materials in photoelectrode consisting of semiconducting oxide nanoparticles and a transparent conducting oxide electrode (TCO). In this presentation, we introduce monodisperesed TiO2 nanoparticles prepared by forced hydrolysis method and their superiority as photoelectrode materials was characterized with aids of optical and electrochemical analysis. Inverse opal-based scattering layers containing highly crystalline anatase nanoparticles are also introduced and their feasibility for use as bi-functional light scattering layer is discussed in terms of optical reflectance and charge generation properties as a function of optical wavelength.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.65-66
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• 2006

[ $TiO_2$ ] single crystalline nanorods are prepared from electrospun fibers which are composed of nanofibrils with an island-in-a-sea morphology. The mechanical pressure produces each fibril into nanorods which are converted to anatase single crystals after calcinations. HRTEM shows that the (001) plane is growing along the longitudinal direction of the rod. In this work, the nanorod electrode provides the efficient photocurrent generation in a quasi-solid state dye-sensitized solar cells (DSSCs) using highly viscous PVDF-HFP based gel electrolytes. The overall converision efficiency of the $TiO_2$ nanorods shows 6.2 % under $100\;mW/cm^2$ (AM 1.5G) illumination.