• 제목/요약/키워드: Crystalline Diamond

검색결과 68건 처리시간 0.022초

다결정 산화갈륨/다이아몬드 이종 박막 성장 및 열처리 효과 연구 (Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates)

  • 서지연;김태규;신윤지;정성민;배시영
    • 한국결정성장학회지
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    • 제31권6호
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    • pp.233-239
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    • 2021
  • 본 연구에서는 산화갈륨의 방열 특성 향상을 위해 산화갈륨/다이아몬드 이종 박막 성장을 진행하였다. 먼저, 핫필라멘트 화학기상증착법을 이용하여 다결정 다이아몬드를 증착시킨 후, 미스트 화학기상증착법을 통해 450~600℃ 사이의 온도구간에서 산화갈륨 박막을 성장시켰다. 열처리 전후 비교를 통해 500℃에서 산화갈륨/다이아몬드 계면 분리 현상이 발생함을 확인하였다. 이는 비정질과 결정질이 혼재된 산화갈륨 박막이 성장된 후, 냉각 과정에서 열팽창계수의 차이로 인해 계면이 분리된 것으로 판단하였다. 따라서, 본 연구를 통한 산화갈륨/다이아몬드 계면의 물리적 안정성을 통해 산화갈륨의 열물성 보완및 고전력 반도체로의 활용이 기대된다.

$Al_{71.6}Ge_{28.4}$ 공정합금의 미세구조 및 기계적 성질의 평가 (Microstructural evolution and mechanical properties of $Al_{71.6}Ge_{28.4}$ eutectic alloy)

  • 박진만;육완;김도향
    • 한국주조공학회지
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    • 제27권4호
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    • pp.167-172
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    • 2007
  • In the present study, the microstructural evolution and mechanical properties of $Al_{71.6}Ge_{28.4}$ eutectic alloy have been investigated. Stable (fcc ${\alpha}$-Al and diamond cubic ${\beta}$-Ge) and various metastable crystalline (monoclinic, rhombohedral) phases were produced by competitive phase selection during non-equilibrium processing methods i.e. melt spinning and injection casting. The as-injection casted samples containing metastable-equilibrium eutectic (${\alpha}$-Al + monoclinic) structure showed much higher strength than samples with equilibrium eutectic (${\alpha}-Al+{\beta}-Ge$) structure but plasticity disappointingly diminished. In order to endow the enhanced ductility without significant strength drop, the alloys was heat-treated at transition temperature from metastable phase to stable phase. The annealed specimen displayed the phase transformed microstructural evolution and enhanced macroscopic plasticity.

Nucleation, Growth and Properties of $sp^3$ Carbon Films Prepared by Direct $C^-$ Ion Beam Deposition

  • Kim, Seong I.
    • The Korean Journal of Ceramics
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    • 제3권3호
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    • pp.173-176
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    • 1997
  • Direct metal ion beam deposition is considered to be a whole new thin film deposition technique. Unlike other conventional thin film deposition processes, the individual deposition particles carry its own ion beam energies which are directly coupled for the formation of this films. Due to the nature of ion beams, the energies can be controlled precisely and eventually can be tuned for optimizing the process. SKION's negative C- ion beam source is used to investigate the initial nucleation mechanism and growth. Strong C- ion beam energy dependence has been observed. Complete phase control of sp3 and sp3, control of the C/SiC/Si interface layer, control of crystalline and amorphous mode growth, and optimization of the physical properties for corresponding applications can be achieved.

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PCD공구를 이용 미소가공시 표면거칠기 특성 (Characteristics of Surface Roughness in Micro fuming using PCD Tools)

  • 한복수;이소영
    • 한국공작기계학회논문집
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    • 제10권5호
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    • pp.31-38
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    • 2001
  • This paper deals with the micro turning property of setting angle using diamond tool. The bed of the system has used the granite which has the thermal and vibrational characteristics superior to the cast iron bed for the common machine tool. To minimize the inner and outer vibration of the fuming system, an air pad system was manufactured and tested. The aero-static spindle system which has the excellent rotation accuracy was designed and manufactured. As a result of the micro-cutting test on aluminum alloy, tool setting angel have effected on surface roughness. From the results, the micro-cutting conditions hope to provide the useful actual data using in industrial fields.

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다결정 다이아몬드공구를 사용한 Al-Si합금의 선삭과정에서 절삭특성에 미치는 Si함량의 영향 (The Effects of Si Content on the Cutting Characteristics in the Turing Process of A1-Si Alloy, Using a Polycrystalline Diamond Tool)

  • 이경호;윤영식;이상조
    • 한국정밀공학회지
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    • 제12권6호
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    • pp.20-26
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    • 1995
  • With the recent development of light and high efficient automobiles and aircraft, demand of the A1-Si alloy is rapidly increasing. However, there is an inclination that as the content of silicon increases it becomes more difficult to machine. Accordingly, the present study intends to analyse and study the cutting resistance and surface roughness of A1-Si alloy with Si contents of 8%, 12%, 17%, and 20%. The A1-Si alloy specimens were turned by a poly- crystalline diamond tool under selected cutting conditions, and results are here described and discussed.

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Simple Synthetic Manipulation Allowing for Morphological Diversity of Porphyrin-Based Microcrystals

  • Lee, Jun-Ho;Ryu, Eui-Hyun;Kim, Sung-Tae;Lee, Suk-Joong
    • Bulletin of the Korean Chemical Society
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    • 제32권2호
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    • pp.609-612
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    • 2011
  • Amphiphilic (porphyrin)Sn$(OH)_2$ molecular building block can directly translate into well-defined solid-state microcrystalline structures. The crystalline diamond plates are obtained from ethanol and crystalline square plates are grown from methanol solution. With a simple synthetic manipulation during the microcrystal growth, the morphologies can be controlled by adopting different molecular packing. Consequently, morphologies of microcrystals have been diversified. Furthermore, the macroscopic crystals were obtained in the presence of cetyltrimethylammonium bromide (CTAB).

무요소법을 이8한 결정고체의 에너지 띠 구조 계산 (Energy band structure calculation of crystalline solids using meshfree methods)

  • 전석기;임세영
    • 한국전산구조공학회:학술대회논문집
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    • 한국전산구조공학회 2002년도 가을 학술발표회 논문집
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    • pp.623-628
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    • 2002
  • A meshfree formulation for the calculation of energy band structure is presented. The conventional meshfree shape function is modified to handle the periodicity of Bravais lattice, and applied to the calculation of real-space electronic-band structure. Numerical examples include the Kronig-Penney model potential and the empirical pseudopotentials of diamond and zinc-blonde semiconductors. Results demonstrate that the meshfree method be a promising one as a real-space technique for the calculations of diverse physical band structures.

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HFCVD 증착 온도 변화에 따른 단결정 다이아몬드 표면 형상 및 성장률 변화 (A Study on the Growth Rate and Surface Shape of Single Crystalline Diamond According to HFCVD Deposition Temperature)

  • 권진욱;김민수;장태환;배문기;김성우;김태규
    • 열처리공학회지
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    • 제34권5호
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    • pp.239-244
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    • 2021
  • Following Silicon Carbide, single crystal diamond continues to attract attention as a next-generation semiconductor substrate material. In addition to excellent physical properties, large area and productivity are very important for semiconductor substrate materials. Research on the increase in area and productivity of single crystal diamonds has been carried out using various devices such as HPHT (High Pressure High Temperature) and MPECVD (Microwave Plasma Enhanced Chemical Vapor Deposition). We hit the limits of growth rate and internal defects. However, HFCVD (Hot Filament Chemical Vapor Deposition) can be replaced due to the previous problem. In this study, HFCVD confirmed the distance between the substrate and the filament, the accompanying growth rate, the surface shape, and the Raman shift of the substrate after vapor deposition according to the vapor deposition temperature change. As a result, it was confirmed that the difference in the growth rate of the single crystal substrate due to the change in the vapor deposition temperature was gained up to 5 times, and that as the vapor deposition temperature increased, a large amount of polycrystalline diamond tended to be generated on the surface.

Measurement of the Thermal Conductivity of a Polycrystalline Diamond Thin Film via Light Source Thermal Analysis

  • Kim, Hojun;Kim, Daeyoon;Lee, Nagyeong;Lee, Yurim;Kim, Kwangbae;Song, Ohsung
    • 한국재료학회지
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    • 제31권12호
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    • pp.665-671
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    • 2021
  • A 1.8 ㎛ thick polycrystalline diamond (PCD) thin film layer is prepared on a Si(100) substrate using hot-filament chemical vapor deposition. Thereafter, its thermal conductivity is measured using the conventional laser flash analysis (LFA) method, a LaserPIT-M2 instrument, and the newly proposed light source thermal analysis (LSTA) method. The LSTA method measures the thermal conductivity of the prepared PCD thin film layer using an ultraviolet (UV) lamp with a wavelength of 395 nm as the heat source and a thermocouple installed at a specific distance. In addition, the microstructure and quality of the prepared PCD thin films are evaluated using an optical microscope, a field emission scanning electron microscope, and a micro-Raman spectroscope. The LFA, LaserPIT-M2, and LSTA determine the thermal conductivities of the PCD thin films, which are 1.7, 1430, and 213.43 W/(m·K), respectively, indicating that the LFA method and LaserPIT-M2 are prone to errors. Considering the grain size of PCD, we conclude that the LSTA method is the most reliable one for determining the thermal conductivity of the fabricated PCD thin film layers. Therefore, the proposed LSTA method presents significant potential for the accurate and reliable measurement of the thermal conductivity of PCD thin films.

Machining Characteristics of Cemented Carbides in Micro Cutting within SEM

  • Heo, Sung-Jung
    • International Journal of Precision Engineering and Manufacturing
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    • 제5권3호
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    • pp.35-42
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    • 2004
  • This research describes that the cutting characteristics and tool wear behavior in the micro cutting of three kinds of wear resistant cemented carbides (WC-Co; V40, V50 and V60) using PCD (Poly Crystalline Diamond) and PCBN (Poly crystalline Cubic Boron Nitride) cutting tools by use of the SEM (Scanning Electron Microscope) direct observation method. The purpose of this research is to present reasonable cutting conditions from the viewpoint of high efficient cutting refer to a precise finished surface and tool wear. Summary of the results is as follows: (1) The cutting forces tend to increase as the increase of the weight percentage of WC particles, and the thrust forces was larger than the principal forces in the cutting of WC-Co. These phenomena were different from the ordinary cutting such as cutting of steel or cast iron. (2) The cutting speed hardly influenced the thrust force, because of the frictional force between the cutting tool edge and small WC particles at low cutting speed region such as 2$\mu\textrm{m}$/s. It seemed that the thrust cutting force occurred by the contact between the flank face and work material near the cutting edge. (3) The wear mechanism for PCD tools is abrasion by hard WC particles of the work materials, which leads diamond grain to be detached from the bond. (4) From the SEM direct observation in cutting the WC-Co, it seems that WC particles are broken and come into contact with the tool edge directly. This causes tool wear, resulting in severe tool damage. (5) In the orthogonal micro cutting of WC-Co, the tool wear in the flank face was formed bigger than that in the rake face on orthogonal micro cutting. And the machining surface integrity on the side of the cutting tool with a negative rake angle was better than that with a positive one, as well as burr in the case of using the cutting tool with a negative rake angle was formed very little compared to the that with a positive one.