• 한국세라믹학회지
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• 제56권6호
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• pp.589-595
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• 2019

The top-seeded solution growth (TSSG) method is an effective approach for the growth of high-quality SiC single crystals. In this method, the temperature gradient in the melt is the key factor determining the crystal growth rate and crystal quality. In this study, the effects of the aperture at the top of the hot-zone on the growth of the SiC single crystal obtained using the TSSG method were evaluated using multiphysics simulations. The temperature distribution and C concentration profile in the Si melt were taken into consideration. The simulation results showed that the adjustment of the aperture at the top of the hot-zone and the temperature gradient in the melt could be finely controlled. The surface morphology, crystal quality, and polytype stability of the grown SiC crystals were investigated using optical microscopy, high-resolution X-ray diffraction, and micro-Raman spectroscopy, respectively. The simulation and experimental results suggested that a small temperature gradient at the crystal-melt interface is suitable for growing high-quality SiC single crystals via the TSSG method.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.197-201
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• 1997

The momentum, heat and mass trasfer phenomena in the silicon melt of the Czochralki crystal growth system are calculated using a three dimensional numerical simulation thechnique. Even though axisymmetrical boundary conditions are imposed to all calculations in a 3cm diameter crucible, several types of non-axisymmetric profiles of velocities, temperature and oxygen concentration appeared in the melt. Because of the non-axisymmetric profiles of velocities, temperature and oxygen concentration appeared in the melt. Because of the non-axisymmetric profiles and rotations of fluid induced by the crucible rotation, temperatures and oxygen concentrations in the silicon melt fluctuate. The rotating velocity of the profile is calculated from the phase shift of the data of temperature or oxygen at two different points which have same radius from center but 90 degree angular difference. From this calculation, it is found that the rotating veolocity of the oxygen and temperature is different from the crucible rotation rates. Therefore the frequencies of the oscillating temperature and oxygen concentrations are not same to the frequencies of the crucible rotations. Futhermore, the components of the frequencies of the temperature and oxygen concentration at the same point are not same. The fluctuation behaviors of the temperature or oxygen themselves are also different when the points are different. The calculation show that the temperature and the oxygen concentration near the interface also fluctuate. The results suggest that the striation pattern found in the grown silicon single crystals may ben generated by the oxygen concentration and the temperature oscillations of the melt occurred near the interface.

• 한국결정성장학회지
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• 제13권1호
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• pp.5-14
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• 2003

Principles of a novel pulse growing method are described. The method realized in the crystal growing on a seed from melts under raw melt feeding provided a more reliable control of the crystallization process when producing large alkali halide crystals. The slow natural convection of the melt in the crucible at a constant melt level is intensified by rotating the crucible, while the crystal rotation favors a more symmetrical distribution of thermal stresses over the crystal cross-section. Optimum rotation parameters for the crucible and crystal have been determined. The spatial position oi the solid/liquid phase interface relatively to the melt surface, heaters and the crucible elements are considered. Basing on that consideration, a novel criterion is stated, that is, the immersion extent of the crystallization front (CF) convex toward the melt. When the crystal grows at a <> CF immersion, the raised CF may tear off from the melt partially or completely due to its weight. This results in avoid formation in the crystal. Experimental data on the radial crystal growth speed are discussed. This speed defines the formation of a gas phase layer at the crystal surface. The layer thickness il a function of time a temperature at specific values of pressure in the furnace and the free melt surface dimensions in the gap between the crystal and crucible wall. Analytical expressions have been derived for the impurity component mass transfer at the steady-state growth stage describing two independent processes, the impurity mass transfer along the <> path and its transit along the <> one. The heater (and thus the melt) temperature variation is inherent in any control system. It has been shown that when random temperature changes occur causing its lowering at a rate exceeding $0.5^{\circ}C/min$, a kind of the CF decoration by foreign impurities or by gas bubbles takes place. Short-term temperature changes at one heater or both result in local (i.e., at the front) redistribution of the preset axial growth speed.

• 대한금속재료학회지
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• 제47권11호
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• pp.734-739
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• 2009

It is well known that the temperature and the flow pattern of the crystal-melt interface affect the qualities of the single crystal in the Czochralski process. Thus the temperature profile in the growth system is very important information. This work focuses on controlling the temperature of the silicon melt with a thermal gradient of the crucible. Therefore, the side heater is divided into three parts and an extra heater is added at the bottom for thermal gradient. The temperature of the silicon melt can be strongly influenced and controlled by the electric power of each heater.

• 한국결정성장학회지
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• 제10권5호
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• pp.356-361
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• 2000

The radial position of OiSF-ring has been meaningful data in industry. Thus it's position was calculated by application of (V/G)/sub crit/ = 0.138 ㎟/minK and point defect dynamics for industrial scale grower with various pull rates. After the calculation, compared with experimental result. OiSF-ring diameters expected with calculation were good agreement with experimental results. In order to show validity of the predicted temperature distribution using STHAMAS which is one of the global simulator for Cz crystal growing, temperature was measured along the axis of crystal using thermocouples, and compared with the calculated temperature. We found the effective thermal conductivity K/sub m/ (r) which gives in accordance with the temperature distribution at the axis of crystal and crystal/melt interface shape between experimental and computational results. Therefore, effective thermal conductivity K/sub m/ (r) was applied instead of solving melt convection problem.

• 대한기계학회논문집B
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• 제23권3호
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• pp.388-397
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• 1999

Numerical simulations are carried out for the magnetic Czochralski single crystal growth system. It Is shown that a magnetic field significantly suppresses the convective flow and as the strength of magnetic field becomes to be stronger, the heat transfer in the melt is dominated by conduction rather than convection. By imposing a cusp magnetic field, the growth interface shape becomes convex toward the melt. When the axial magnetic field is imposed, there occurs an inversion of the interface shape with increase of the magnetic field strength. The oxygen concentration near the interface decreases with increasing cusp magnetic field strength while axial field causes an increase of an oxygen concentration at the central region and decrease of that at the edge of the crystal. The results show that the cusp magnetic field has advantages over an axial magnetic field In the radial uniformity of oxygen as well as in the additional degree of control.

• 한국세라믹학회지
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• 제22권5호
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• pp.43-46
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• 1985

Constitutional supercooling due to concentration gradient at solid-liquid interface in the melt can be avioded by increasing rotational speed for growing $LiNbO_3$ single crystals from the stoichiometric melt. Growth conditions for high quality crystals were determined by rotational speed by which other growth parameters were adjusted.

• 한국결정성장학회지
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• 제4권4호
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• pp.405-410
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• 1994

$\mu\textrm{m}$-PD법에 의해 융액 조성을 변화시키면서 KLN결정을 육성하였다. 육성된 결정은 DTA 측정 및 X.선 회절법에 의해 조성을 변화를 측정하였다. 이 결과로부터 $\mu\textrm{m}$-PD KLN 단결정은 육성축 방향에 따라 균일한 조성을 갖음을 알 수 있었으며, 이는 고액계면에서의 대류제의 효과에 기인된다고 사료된다.

• 한국결정성장학회지
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• 제9권4호
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• pp.402-416
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• 1999

The thermal distributions near the growth interface of 150nm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10nm from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it is confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient(G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective length of the thermal gradient for defect generation are varied, we defined the effective length as 10n,\m from th interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitials. The experimental results after detaching FZ and CZ crystals from the melt show that growth interfaces are filled with vacancies. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitials are necessary. Such interstitials recombine with vacancies which were generated at the growth interface, nest occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by te distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melts, respectively.

• 한국결정성장학회지
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• 제2권1호
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• pp.10-19
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• 1992

Soft Ferrites 가운데 대표적인 자성재료로써 최근에 개발된 Mn-Zn Ferrite는 높은 초기투자율과 포화자속밀도, 낮은 손실계수를 갖고 있으며 또한, 단결정으로써의 기계적 특성이 우수하며 VTR Head의 소재로 사용되는 중요한 전자부품이다. melt를 수용하는 도가니를 사용치 않아 결정으로의 불순물 침입이 없으며 halogen lamp로부터 방출된 적외선을 열원으로 하여 한 곳에 초점을 이루어 온도구배를 크게 유지하여 결정성장을 이루는 Floating Zone(FZ)법에 의해 Ar 및 $O_2$혼합가스 분위기 하에서 직경 8mm의 Mn-Zn Ferrite 단결정을 육성하였다. 성장 중 용융대에서의 최고온도는 $1650^{\circ}C$ 온도를 유지하였고 결정성장 속도는 10mm/hr, 회전속도는 20 rpm 이었으며 성장방위를 확인하기 위해 Laue 분석 및 XRD, TEM을 이용, 결정의 상등을 분석하였으며 화학적인 etching을 하여 광학현미경을 통해 etch pits 형상을 관찰하였다. 그리고 양질의 결정을 얻기 위해 원료봉 직경에 따른 결정화 속도와 적정한 melt직경과 길이에 대한 상관관계를 찾아내었고 또한 성장계면의 양상에 대해 고찰하였다.