• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.620-628
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• 2008

Cadmium sulphide (CdS) thin film, which is used as a window layer of heterojunction solar cell, on the glass substrate was deposited by vacuum evaporation. Effects of deposition conditions such as the source and substrate temperature on electrical and optical properties of CdS films was investigated. As the source temperature was increased, the deposition rate of CdS films was increased. In addition, the optical transmittance and the electrical resistivity of CdS films were decreased as the source temperature was increased. This results were attributed to the increase of excess Cd amount in the film. The crystal structure of CdS films exhibited the hexagonal phase with preferential orientation of the (002) plane. As the substrate temperature was increased, the crystal structure of CdS films was improved and the resistivity of the films was increased due to the decrease of excess Cd in film.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.51-51
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• 2010

Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.

• Journal of the Korean Society for Heat Treatment
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• v.37 no.2
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• pp.66-72
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• 2024

To investigate the effect of deformation condition on microstructure and texture formation behaviors of AZ91 magnesium alloy with three kinds of initial texure during high-temperature deformation, plane strain compression tests were carried out at high-temperature deformation conditions - temperature of 673 K~723 K, strain rate of 5 × 10^-3s^-1, up to a strain of -1.0. To clarify the texture formation behavior and crystal orientaion distribution, X-ray diffraction and EBSD measurement were conducted on mid-plane section of the specimens after electroltytic polishing. As a result of this study, it is found that the main component and the accumulation of pole density vary depending on initial texture and deformation caondition, and the formation and development basal texture components ({0001} <$10\bar{1}0$>) were observed regardless of the initial texure in all case of specimens.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.258-292
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• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.2
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• pp.87-90
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• 2008

Co-Pt alloy thin films were galvanostatically electrodeposited on Ru (30 nm)/Ta (5 nm)/Si (100) substrates from a amino-citrate based electrolyte. We used Ru(0002)-oriented buffer layers to control the crystallinity and orientation of the Co-Pt alloy thin films. The effect of solution temperature on the microstructure and magnetic properties of the Co-Pt alloy thin film was investigated. The samples were characterized by EDS, FESEM, XRD diffractometer using Cu $K{\alpha}$ radiation. The magnetic properties of these films were analyzed by a VSM and torque magnetometer. The Co-Pt alloy thin films were exhibited very high out-of-plane coercivity and squareness of the multilayer were 6527 Oe and 0.93, respectively, without heat treatment.

• Progress in Superconductivity and Cryogenics
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• v.20 no.3
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• pp.5-10
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• 2018

This study presents that various grain boundary junctions are prepared by controlling the seed orientation combined with an artificial hole in a melt process REBCO bulk superconductor. Large grain YBCO superconductors have been fabricated with various grain boundary junctions that the angle between the grain boundary and the <001> axis of Y123 crystal is $0^{\circ}$, $30^{\circ}$ and $45^{\circ}$, respectively. The presence of the artificial hole is beneficial for the formation of clean grain boundary junction and single peak trapped magnetic field profiles have been obtained. Artificial hole makes two growth fronts meet at a point on a periphery of the artificial hole. The presence of artificial hole is not likely to affect on the distribution of Y211 particles. The newly formed <110> facet lines are explained by the formation of new Y123/liquid interface with (010) crystallographic plane.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.243.2-243.2
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• 2011

ZnO materials with a wide band gap of approximately 3.3 eV has been used in transparent conducting oxides (TCO) due to exhibitinga high optical transmission, but its low conductivity acts as role of a limitation for conducting applications. Recently, Ga or Al-doped ZnO (GZO, AZO) becomes transparent conducting materials because of high optical transmission and excellent conductivity. However, the fundamental mechanism underlying the improvement of electrical conductivity of the GZO is still the subject of debate. In this study, we have fully investigated the reasons of high conductivity through the characterization of plane defects, crystal orientation, doping contents, crystal structure in Zn1-xGaxO (x=0, 3, 5.1, 5.6, 6.6 wt%). We manufactured Zn1-xGaxO by sintering ZnO and Ga2O3 powers, having a theoretical density of 99.9% and homogeneous Ga-dopant distribution in ZnO grains. The GZO containing 5.6 wt% Ga represents the highest electrical conductivity of $7.5{\times}10^{-4}{\Omega}{\cdot}m$. In particular, many twins and superlattices were induced by doping Ga in ZnO, revealed by X-ray diffraction measurements and TEM (transmission electron microscopy) observations. Twins developed in conventional ZnO crystal are generally formed at (110) and (112) planes, but we have observed the twins at (113) plane only, which is the first report in ZnO material. Interestingly, the superlattice structure was not observed at the grains in which twins are developed and the opposite case was true. This structural change in the GZO resulted in the difference of electrical conductivity. Enhancement of the conductivity was closely related to the extent of Ga ordering in the GZO lattice. Maximum conductivity was obtained at the GZO with a superlattice structure formed ideal ordering of Ga atoms.

• Journal of the Korean Ceramic Society
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• v.46 no.6
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• pp.596-601
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• 2009

Double-layered ZnO nanostructures have been synthesized by aqueous solution method on (001) plane of ZnO nanorod. A stepwise changing of aqueous solution concentration gave rise to a new nano-structured layer consisting of either multiple of nanorods or nanowires with much smaller radii than that of the ZnO nanorod on which the new layer was grown. As the first step the ZnO nanorods have been grown to have the (001) preferential orientation in the aqueous solution consisting of 0.1M zinc nitrate and 0.1 M HMT. This preferentially aligned ZnO nanorods have been regrown in either a less diluted solution of 0.01M zinc nitrate and 0.01 M HMT or a more diluted solution of 0.005M zinc nitrate and 0.01 M HMT. A new nano-layer consisting of numerous aligned nanorods or nanowires has been produced on the (001) planes of ZnO nanorods. The growth mechanism for this double layered ZnO nanostructure is ascribed to the (001) polar surface energy instability and inhibition of (001) plane growth due to the step-wise change of aqueous solution concentration; ZnO nuclei formed on the (001) plane grow preferentially in (010) plane instead of (001) plane to reduce the total surface energy. Surface area of ZnO nanostructure can be increased in orders of magnitudes by forming a new layer consisting of smaller nanorods/nanowires on (001) plane of ZnO nanorods.

• Journal of Magnetics
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• v.16 no.3
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• pp.220-224
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• 2011

Die-upset magnets from a mechanically-milled Pr(Co,In)$_5$-type alloy are known to have a peculiar texture; the easy magnetization axis (c-axis) is perpendicular to the pressing direction. This peculiar texture is thought to be linked closely to the anisotropic mechanical properties of Pr(Co,In)$_5$-type hexagonal compounds. The hardness of the Pr(Co,In)$_5$-type crystal was measured using selectively grown grains in an annealed $Pr_{17}Co_{82}In_1$ alloy button, and the crystallographic orientation was determined by observing the magnetic domain image. The hardness (549 VHN) on the plane with a 'cogwheel'-type domain image was significantly higher than that (510 VHN) on the plane with a 'cigar'-type domain image, indicating that the inter-layer bonding force between the (000l) basal planes is stronger than that between the (hki0) planes. This suggests that the most probable slip plane is the (hki0) plane parallel to the c-axis. During die-upsetting of the Pr(Co,In)$_5$-type alloys the deformation proceeds by (hki0) plane slip, and the c-axis rotates to ultimately become oriented perpendicular to the pressing direction. It is proposed that the peculiar texture in the die-upset Pr(Co,In)$_5$-type magnets is probably developed by slip deformation of the (hki0) plane of the Pr(Co,In)$_5$-type grains.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.109-113
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• 2013

ZnO thin films were synthesized on Si substrates by MOCVD using diethyl zinc as a precursor. Effects of $O_2$/DEZ gas mixing ratio on the growth rate, surface morphology, preferred orientation, and electrical properties of the ZnO thin films were investigated with SEM, XRD, and Hall measurement. The surface reflectance variations of ZnO thin films were analyzed using laser-photometer apparatus. As the $O_2$/DEZ mixing ratio increased, growth rate and $I_{(002)}/I_{(101)}$ in XRD of ZnO thin films decreased, and the crystal structure was changed from columnar to planar structure. All ZnO films deposited at various CVD conditions exhibited c-axis (002) plane preferred orientation. The electrical properties of ZnO thin films mainly depended on the carrier mobility.