• Journal of Pharmaceutical Investigation
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• v.34 no.6
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• pp.443-452
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• 2004

Habit is the description of the outer appearance of a crystal. If the environment of a growing crystal affects its external shape without changing its internal structure, a different habit results. Crystal habit and the internal structure of a drug can affect bulk and physicochemical properties, which range from flowability to chemical stability. A polymorph is a solid crystalline phase of a given compound resulting from the possibility of at least two different arrangements of the molecules of that compound in the solid state. Chemical stability and solubility changes due to polymorphism can have an impact on a drug's bioavailability and its development program. During crystallization from a solution, crystals separating may consist of a pure component or be a molecular compound. Solvates are molecular complexes that have incorporated the crystallizing solvent molecule in their lattice. When the solvent incorporated in the solvate is water, it is called a hydrate. To distinguish solvates from polymorphs, which are not molecular compounds, the term pseudopolymorph is used. Identification of possible hydrate compounds is important since their aqueous solubilities can be significantly less than their anhydrous forms. Conversion of an anhydrous compound to a hydrate within the dosage form may reduce the dissolution rate and extent of drug absorption. An amorphous solid may be treated as a supercooled liquid in which the arrangement of molecules is random. Amorphous solids lack the three-dimensional long-range order found in crystalline solids. Since amorphous forms are usually of higher thermodynamic energy than corresponding crystalline forms, solubilities as well as dissolution rates are generally greater. A study on crystal form includes characterization of (l)crystal habit, (2)polymorphism, (3)pseudopolymorphism, (4)amorphous solid.

• Rapid Communication in Photoscience
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• v.4 no.1
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• pp.9-11
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• 2015

The debromination of phenethyl bromide by the $B_{12}-TiO_2$ hybrid catalyst under UV light irradiation was investigated. The catalytic efficiency was dependent on the type of $TiO_2$. The anatase form of $TiO_2$ was superior to the rutile form of $TiO_2$. The selectivity of the product was also dependent on the crystal structure of $TiO_2$, and the rutile form of $TiO_2$ showed a high selectivity for the formation of the coupling product, 2,3-diphenylbutane, when compared to that of the anatase form of $TiO_2$.

• Journal of the Korean Society of Food Science and Nutrition
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• v.27 no.3
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• pp.413-418
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• 1998

There are several types of salts that classifed into raw salts(Chunil salt, Saeng salt), purified salts (NaCl reagent grade, Hanju salt) and processed salts(Gueun salt, Saeng kum, Bamboo salt) in Korea. Their major element is NaCl but raw salt from sea water contains other minerals such as K, Mg and S. Mineral contents of the various kinds of salt analyzed with ICP-AES and AAS were different, especially on the contents of K, Mg and Ca. Chunil salt was abundant in Ca(1,037ppm), K(3,707ppm), Mg(10,266ppm) and S(7,459ppm), and salt water from the Chunil salt contained small amounts of Pb, Al, Cr and Hg. Processed salts contained high levels of Ca, K, Mg and Fe. Especially, high levels of K, P, Fe and Ge were detected in bamboo salt. Purified salts showed regular crystal form and raw salts exhibited irregular crystal form under the SEM. The processed salts were not crystal form, but fused and irregular round form.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.81-82
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• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C\;and\;420^{\circ}C$, respectively. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd},\;V_{Se},\;Cd_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4$/GaAs did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• The Journal of the Petrological Society of Korea
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• v.4 no.2
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• pp.168-177
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• 1995

Crystal boundaries in igneous rocks are genetically classified in order to predict the geometric patterns of the boundaries which may aid deciphering the textural code in igneous rocks. Crystal boundaries may be formed by two end-member processes;(1) mechanical and (2) chemical removal of interstitial melt. Mechanical removal of the melt will form displacement impingement boundaries, while chemical removal of the melt will form growth impingement boundaries. The positions of boundaries relative to the material points may be affected by secondary processes such as (1) migration and (2) dissolution. The geometric features of crystal boundaries, suggested in this study, may be useful when studying igneous textures and processes, although it may be impossible to determine the suggested features with the analytical techniques currently avilable.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.6
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• pp.274-284
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• 2001

A stoichimetric mixture of evaporating materials for $AgInS_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $AgInS_2$mixed crystal was deposited on thorughly etched semi-insulating GaAs(100) substrate by the Hot wall Epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $AgInS_2$ single crystal the films measured from Hall effect by van der Pauw method are $9.35\times 10^{16}/\terxtm{cm}^3$ and $294\terxtm{cm}^2$/V.s at 293 K, respectively. From the optical absorption measurement the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin film was found to be $E_g$(T)= 2.1365eV-($9.89\times 10^{-3}eV/T^2$/(2930+T). After the as-grown $AgInS_2$ single crystal thin films was annealed in $Ag^-S^-$ and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal the films has been investigated by using the photoluminescence(PL) at 10K. The native defects of $V_{Ag},V_s, Ag_{int}$ and $S_{int}$ int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $AgInS_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in $AgInS_2$ /GaAs did not form the native defects because In is $AgInS_2$ single crystal thin films did exist in the form of stable bonds.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.286-292
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• 1996

The research activities on the thin film crystal growth presented in the Journal of the Korean Association of Crystal Growth form 1991 to 1995 have been reviewed.

• Korean Journal of Crystallography
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• v.5 no.2
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• pp.93-99
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• 1994

Growth form and surface morphology of NYAB single crystal grown by TSSG technique using a K2O/3MoOS/0.5B203 flux was investigated. In the crystal grown from <100> or <120> seed, prismatic and (101) faces were well developed with different size each other. (001) face was also developed in the crystal grown from <001> seed. While growth hillocks were observed on the prismatic face of the crystal grown from <100> seed, surface striations parallel to neighbor (101) faces were formed on that face of the crystal grown from <001> seed. The (101) faces were grown by two dimensional nucleation growth. (001) face which was developed at slow growth velocity of [001] direction was grown by screw dislocation Anisotropy of growth velocity as to seed orientation affected on crystal morphology and surface morphology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.100-101
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• 2008

To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $Cu_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.152-153
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• 2007

$CuInSe_2$ single crystal thin film was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Cu}$, $V_{Se}$, $Cu_{lnt}$, and $Se_{lnt}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.