• Progress in Superconductivity
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• v.3 no.1
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• pp.60-64
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• 2001

We have studied properties of step-edge Junction prepared with crystal orientation of sapphire substrate. The Step on sapphire substrates fabricated by conventional photolithography method and Ar ion milling method. $CeO_2$ buffer layer and in-situ YBCO thin film were deposited on the stepped sapphire substrates by a pulsed laser deposition method with the predetermined optimized condition. The step angle was centre fled low angle of about $25^{\circ}$. The YBCO film thickness was varied to obtain various thickness ratios of the film to the step height in a range from 0.7 to 1.2. I-V curves of junction were showed RSJ-behavior, double junction structure, and hysteresis due to the crystal orientation of substrate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.149-156
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• 1993

Polycrystalline silicon was produced from metallurgical-grade Si by unidirectional solidification. Variations of impurity concentration and resistivity in the ingots have been investigated. X-ray diffraction analysis has also been performed to examine the crystal orientation. According to the X-ray diffraction analysis on the polycrystalline silicon, preferential orientation was changed from ( 220) into ( III ) with decreasing growth rate. Also, with increasing growth rate and fraction solidified, the resistivity tends to decrease.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.863-866
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• 2013

SiC crystal ingots were grown on 6H-SiC dual-seed crystals with different surface roughness and different seed orientation by a PVT (Physical Vapor Transport) method. 4H and 15R-SiC were grown on seed crystal with high root-mean-square (rms) value. The polytype of grown crystal on the seed crystal with lower rms value was confirmed to be 6H-SiC. On the other hand, all SiC crystals grown on seed crystals with different seed orientation were proven to be 6H-SiC. The surface roughness of seed crystals had no effect on the crystal structure of the grown crystals. However, the crystal quality of 6H-SiC single crystals grown on the on-axis seed were revealed to be slightly better than that of 6H-SiC crystal grown on the off-axis seed.

• Korean Journal of Metals and Materials
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• v.50 no.1
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• pp.78-85
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• 2012

Aluminum nitride(AlN) is a compound (III-V group) of hexagonal system with a crystal structure. Its Wurzite phase is a very wide band gap semiconductor material. It has not only a high thermal conductivity, a high electrical resistance, a high electrical insulating constant, a high breakdown voltage and an excellent mechanical strength but also stable thermal and chemical characteristics. This study is on the preferred orientation characteristics of AlN thin films by reactive evaporation using $NH_3$. We have manufactured an AlN thin film and then have checked the crystal structure and the preferred orientation by using an X-ray diffractometer and have also observed the microstructure with TEM and AlN chemical structure with FT-IR. We can manufacture an excellent AlN thin film by reactive evaporation using $NH_3$ under 873 K of substrate temperature. The AlN thin film growth is dependent on Al supplying and $NH_3$ has been found to be effective as a source of $N_2$. However, the nuclear structure of AlN did not occur randomly around the substrate a particle of the a-axis orientation in fast growth speed becomes an earlier crystal structure and is shown to have an a-axis preferred orientation. Therefore, reactive evaporation using $NH_3$ is not affected by provided $H_2$ amount and this can be an easy a-axis orientation method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.338-343
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• 2005

Pb(Zr,Ti)O₃[PZT] thin films were prepared on a highly (100) oriented LaNiO₃[LNO] and a randomly oriented LNO by sol-gel process. The PZT thin films on a highly (100) oriented LNO show a high (100) crystal orientation (F=100 ％), those on a randomly oriented LNO show a random crystal orientation (F=60 ％). All the PZT layer have a flat and dense microstructure with large columnar grains and their grain size are 25 nm. In the ferroelectric curves at electric field of 40 kV/cm, a highly (100) oriented PZT/LNO samples show coercive field, E/sub c/=10 kV/cm and remanent polarization, P/sub r/=14.5 μC/㎠, while a randomly oriented PZT/LNO sample show E/sub c/=10 kV/cm and P/sub r/=5.4 μC/㎠.

• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.732-738
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• 2014

Combined optical simulation of the ray-tracing technique and the finite difference time domain method was used to investigate the effect of the emitter orientation and the photonic crystal layer on the outcoupling efficiency (OCE) of bottom-emission type organic light emitting diodes (OLEDs). The OLED with a horizontal emitter exhibited an opposite interference effect to that of one with a vertical emitter, which suggested that the OCE would be very sensitive to the emitter orientation at a fixed emitter-cathode distance. The OLED with a horizontal emitter exhibited much larger OCE than that with a vertical emitter did, which was due to the substantial difference in the radiation pattern along with the different coupling with the surface plasmon excitation. The OCE with a horizontal emitter was increased by approximately 1.3 times by inserting a photonic crystal layer between the indium tin oxide layer and the glass substrate. The present study suggested that appropriate control of the emitter orientation and its combination to other outcoupling structures could be used to enhance the OCE of OLEDs substantially.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.103-106
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• 2002

We prepared $Co_{77}Cr_{20}Ta_{3}$ thin film with Facing Targets Sputtering Apparatus. which can deposit a high quality thin film CoCrTa magnetic layer for Perpendicular magnetic recording media. In order to obtain Good Crystal orientation of CoCrTa thin films. We prepared Thin Films on slide glass substrate. The thickness of Buffer-layer were varied from 10 to 50 nm and Magnetic layer thickness fixed 100[nm]. input current was varied from 0.2[A] to 0.5[A]. Substrate temperature was varied from room temperature to ${250^{\circ}C}$ respectively. The crystal orientation of the CoCrTa film were examined with XRD. Introduce Buffer-layer thin films showed improvement of dispersion angle of c-axis orientation (${\Delta\theta}_{50}$).

• Korean Journal of Materials Research
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• v.19 no.12
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• pp.674-679
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• 2009

Yttria stabilized zirconia single crystals show plastic deformation at high temperatures by activating dislocations. The plastic deformation is highly dependent on crystallographic orientation. When the samples were deformed at different orientations, stress-strain curves changed by operating different slip systems. The strength of samples was also highly dependent on crystallographic orientation, i.e., samples without yield drop showed higher strength than that of samples exhibiting yield drop. The slip systems in the sample deformed along <112>, <111> and <001> agreed with the theoretical values of the plastic deformation, following Schmid's Law. Dislocations play a major role in the plastic deformation of this crystal. At the early stages of plastic deformation, all samples exhibited dislocation dipoles and, in the later stages, dislocation interactions occurred by forming nodes, tangles and networks. In this study, three different orientations, [11-2], [111] and [001] were employed to explain the plastic deformation behavior. A microstructural analysis was performed to elucidate the mechanism of the plastic behavior of this crystal.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1999.03a
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• pp.149-152
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• 1999

The effect of initial orientation on the microstructure and texture evolution of two ferritic stainless steels was investigated. the columnar and equiaxed crystal specimens which were prepared from continuous casting slab were hot rolled annealed cold rolled and annealed respectively. The rolling and recrystallization textures at each process stage were examined by orientation distribution function (ODF) and electron back-scattered diffraction (EBSD); The observation showed that the orientation density of the $\alpha$-fibre of hot rolled band of columnar crystal specimen was more pronounced than that of the equaxed one at the center layer. Nevertheless the cold rolled textures of Type 430 steel have demonstrated a rather similar development . Compared to Type 430 steel the development of the $\alpha$-fibre in the center layer of Type 409L steel was much more pronounced. The relation between texture evolution and ridging behaviour has been discussed.

• Journal of the Korean Wood Science and Technology
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• v.26 no.4
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• pp.20-25
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• 1998

Radial variation of crystalline state in a stem of Chamaecyparis obtusa E. was examined by x-ray diffraction analyses. Relative crystallinity and degree of crystallite orientation showed significant differences between juvenile and adult wood. That is, Relative crystallinity increased with increasing the age from pith to about 20th annual ring, after which it reached a more or less constant value. On the other hand, degree of crystallite orientation decreased outward from pith to about 10 years and presented almost a constant value thereafter. Crystal width by Scherrer's equation did not show any significant differences between juvenile and adult wood. Therefore, it was considered that crystallinity index and degree of crystallite orientation by x-ray diffraction method could be used for evaluating wood quality.