• 제목/요약/키워드: Crucible

검색결과 316건 처리시간 0.042초

Study on Recycling of Scraps from Process of Silicon-single-crystal for Semiconductor

  • Lee, Sang-Hoon;Lee, Kwan-Hee;Hiroshi Okamoto
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2001년도 The 6th International Symposium of East Asian Resources Recycling Technology
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    • pp.705-710
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    • 2001
  • So for the quartz-glassy crucible wastes which was used for pulling up silicon-single-crystal ingot have simply reused for refractory raw-materials, or exhausted. This study is concerned on the advanced recycling-technology that is obtained by the proper micro-particle preparation process in order to fabricate fine amorphous silica filler for EMC (Epoxy Molding Compound). Therefore, this paper will deal with the physical, chemical and thermal pre-treatment process for efficient impurity removal and with the proper micro-particle process for producing the amorphous silicafiller. In view of the results, if the chemical, physical and thermal pre-treatment process for efficient elimination of impurity was passed, the purity of wasted fused glassy crucible is almost equal to the its of first anhydrous quartz glass. Thus, it was understood that this wasted fused glassy crucible was sufficient value of recycling, though it was damaged. When the ingot was fabricated, Phase transformation of crystallization by heat treatment (heat hysteresis phenomenon) was not changed. So, it was understood that as fused silica in the amorphous state, as It is, recycling possibility was very high

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석영유리 도가니 국내외 현황 (Status of Quartz Glass Crucible)

  • 노성훈;강남훈;윤희근;김형준
    • 세라미스트
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    • 제22권4호
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    • pp.452-463
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    • 2019
  • A quartz glass crucible is the essential material for manufacturing silicon ingots such as semiconductors and solar cells. Quartz glass crucibles for semiconductors and solar cells are made similar, but differ in surface purity, structure and durability. Recently, ultra high purity synthetic glass crucibles for semiconductors have become more important due to foreign problems. In Korea, it has succeeded in producing 28-inch quartz glass crucibles through the past 10 years. However, 32-inch synthetic quartz glass for the production of silicon ingots for semiconductors is not up to the level of advanced technology, and the technology gap is expected to be 2 to 3 years. In order to overcome these technological gaps and localize synthetic quartz glass ware, close cooperation between production companies and demand companies and localization of synthetic quartz glass powder must also be made. In addition, if government support can be added, faster results can be expected.

Crucible boat의 구멍 크기에 따른 유기발광소자의 전기적 특성 (Electrical Characteristics of OLEDs depending on the Boat hole-size of a Crucible)

  • 김원종;이영환;이상교;김태완;홍진웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.29-30
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    • 2007
  • In a device structure of ITO/tris(8-hydroxyquinoline) aluminum $(Alq_3)$/Al device, We investigated an the electrical characteristics of Organic Light-Emitting Diodes (OLEDs) depending on the hole-size of boat. The device was manufactured using a thermal evaporation under a base pressure of $5{\times}10^{-6}$ [Torr]. The $Alq_3$ organics were evaporated to be 100 [nm] thick at a deposition rate of $1.5[{\AA}/s]$, and in order to investigate the optimal surface roughness of $Alq_3$, the $Alq_3$ was thermally evaporated to be 0.8 [mm], 1.0 [mm], 1.5 [mm], and 3.0 [mm] as a hole-size of the boat respectively. We found that when the hole-size of the boat is 1.0 [mm], luminance and external quantum efficiency are superior.

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표면 거침도에 따른 OLEDs의 전기적 특성 (Electrical Properties of OLEDs depending on the Surface Roughness)

  • 김원종;이영환;임윤희;심낙순;이상교;신종열;홍진웅
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.1327-1328
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    • 2007
  • A base structure of device was made to be ITO/tris(8-hydroxyquinoline) aluminum ($Alq_3$)/Al and the $Alq_3$ organics were evaporated to be 100nm thick at a deposition rate of $1.5\;{\AA}/s$. In order to investigate the optimal surface roughness of $Alq_3$, the $Alq_3$ was thermally evaporated to be 0.8 mm, 1.0 mm, 1.5 mm 2.0 mm and 3.0 mm as a hole-size of the crucible, respectively. When the hole-size of the crucible is 1.0 mm, we found that when the hole-size of the crucible is 1.0 mm, the electrical properties are superior to the others.

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Stability of the growth process at pulling large alkali halide single crystals

  • V.I. Goriletsky;S.K. Bondarenko;M.M. Smirnov;V.I. Sumin;K.V. Shakhova;V.S. Suzdal;V.A. Kuznetzov
    • 한국결정성장학회지
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    • 제13권1호
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    • pp.5-14
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    • 2003
  • Principles of a novel pulse growing method are described. The method realized in the crystal growing on a seed from melts under raw melt feeding provided a more reliable control of the crystallization process when producing large alkali halide crystals. The slow natural convection of the melt in the crucible at a constant melt level is intensified by rotating the crucible, while the crystal rotation favors a more symmetrical distribution of thermal stresses over the crystal cross-section. Optimum rotation parameters for the crucible and crystal have been determined. The spatial position oi the solid/liquid phase interface relatively to the melt surface, heaters and the crucible elements are considered. Basing on that consideration, a novel criterion is stated, that is, the immersion extent of the crystallization front (CF) convex toward the melt. When the crystal grows at a <> CF immersion, the raised CF may tear off from the melt partially or completely due to its weight. This results in avoid formation in the crystal. Experimental data on the radial crystal growth speed are discussed. This speed defines the formation of a gas phase layer at the crystal surface. The layer thickness il a function of time a temperature at specific values of pressure in the furnace and the free melt surface dimensions in the gap between the crystal and crucible wall. Analytical expressions have been derived for the impurity component mass transfer at the steady-state growth stage describing two independent processes, the impurity mass transfer along the <> path and its transit along the <> one. The heater (and thus the melt) temperature variation is inherent in any control system. It has been shown that when random temperature changes occur causing its lowering at a rate exceeding $0.5^{\circ}C/min$, a kind of the CF decoration by foreign impurities or by gas bubbles takes place. Short-term temperature changes at one heater or both result in local (i.e., at the front) redistribution of the preset axial growth speed.