• Korean Journal of Acupuncture
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• v.31 no.2
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• pp.90-97
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• 2014

Objective : The objective of this study is to investigate the effects of smoking on the skin bioelectrical capacitance at specific acupoints of lung meridian. Methods : Bioelectrical capacitance was measured on bilateral six source points(bilateral LU10, LU9, LU7, LU6, LU5, LU1), and the changes with time and between left and right side were analyzed. Results : The skin bioelectrical capacitance at specific acupoints of lung meridian was significantly increased after smoking. And it recovered as time passed. The change of the skin bioelectrical capacitances at specific acupoints of lung meridian with time were similar between left and right. Conclusion : Smoking increases the bioelectrical capacitance at specific acupoints of lung meridian. There is no difference between the effects of smoking on the bioelectrical capacitance at left and right specific acupoints of lung meridian.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.29 no.1 s.232
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• pp.87-94
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• 2005

A computer code for Electrical Capacitance Tomography (ECT) is developed to sense the cross sectional phase distribution of two-phase flow in the rectangular pipe in which the tomography sensor furnished by the insulated wall, electrodes, and electric field screen. The computer code had two steps for the image reconstruction. In the forward projection step, the sensitivity matrix was constructed based on the electric field calculated by the finite difference method. In the backward projection step, the sensitivity matrix and the measured capacitances were used to reconstruct the cross sectional image. Several algorithms including LBP, TR, ITR, and PLI were employed to find the proper one for the two-phase flow analysis. Since the dielectric constant of the water in two-phase flow is sensitive to the thermal parameter such as, temperature and pressure, the developed code was evaluated to find their accuracy, speed of calculation, and sensitivity to the variation of the dielectric constant. It was found that the iterative methods are superior to the direct methods for the image reconstruction, and the PLI method was the best in the variation of the dielectric constants.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1297-1299
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• 1998

LB layers of L-$\alpha$-DLPC deposited by LB method were deposited onto n-type silicon wafer as Z-type film. Films made up of 8, 16 layers of lipid with long alkyl chain and the thickness of monolayer and multilayers was determined by ellipsometry. It was deposited Ag and Al onto LB layers and silicon wafer for electrode and small electrode exhibit high capacitance and low leakage current. The C-V curves of the MLS capacitor shows very high saturation value of capacitance. And cross-sectional SEM image of MLS capacitor indicated the presence of pore with Al electrode and we found that the Ag is good for electrode metal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.949-954
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• 2012

The K-PCS and W-CDMA dual band dielectric duplexer and bandpass filters have been designed and fabricated. The dual band duplexer consists of the separate monoblock K-PCS and W-CDMA duplexers using common antenna port. The coupling capacitance and I/O impedance matching have been designed to minimize the cross interference between the bands. Isolations of crosspoint between Tx and Rx in K-PCS and W-CDMA dualband were about 47 dB and 100 dB, respectively. On the other hand, isolations of Tx and Rx in K-PCS and W-CDMA were about 66 dB and 65 dB, respectively. The difference between 47 dB and 100 dB originated from the different center frequencies in Tx and Rx of K-PCS and W-CDMA bands. The coupling capacitance of the bandwidth, I/O capacitance of I/O matching and impedance matching, and various capacitances were important role to fabricate the dielectric duplexer and bandpass filters.

• Journal of IKEEE
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• v.28 no.2
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• pp.158-167
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• 2024

In this study, U-net model based on electrical capacitance is applied to monitor the condition inside the pipeline of semiconductor rear end process implemented in the numerical simulation. Capacitance values measured from electrodes attached to the pipeline is used as input data for the U-net network model and estimated permittivity distribution by the U-net model is used to reconstructed cross-sectional image at the pipeline. In the numerical simulation, images reconstructed by U-net model, Fully-connected neural network (FCNN) model and Newton-Raphson method are compared for evaluation. U-net model shows good results as compared to other models.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.12
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• pp.1918-1925
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• 1989

A method for computing the capacitance and inductance matrix for 2-D multiconductor transmission lines with arbitrary cross section in dielectric medium is presented. The integral equation is obtained by using a free space Green function in conjunction with free and bound charges existing on boundary surfaces. The numerical analysis is based on the moment method using point matching and Galerkin method. And kthe scheme to reduce memory and computation time is presented for symmetric structure.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.168-168
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• 2006

Low-operating voltage organic field-effect transistors (OFETs) have been realized with high dielectric constant (${\kappa}$) polymer such as cyanoethylated poly vinyl alcohol (CR-V, ${\kappa}=12$). Since the $high-{\kappa}$polymers are likely to contain water and ionic impurities, large hysteresis and considerable leakage current are frequently observed in OFETs. To solve these problems, we cross-linked the CR-V by using a cross-linking agent. Cross-linked CR-V dielectrics showed high dielectric constant of 11.1 and good insulating properties, resulting in a high capacitance ($81nF/cm^{2}$ at 1MHz) at 120 nm of dielectric thickness. Pentacene FETs with cross-linked CR-V dielectrics exhibited high carrier mobility ($0.72\;cm^{2}/Vs$), small subthreshold swing (185 mV/dec) and little hysteresis at low-operating voltage (${\Leq}-3V$).

• Journal of KIISE:Computer Systems and Theory
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• v.30 no.5_6
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• pp.265-272
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• 2003

As VLSI systems become integrated at large-scale, logic fault or delay fault may result from crosstalk noise originated from cross coupling capacitance which exists between two adjacent wires. Because designers in industry do not have means to prevent crosstalk problems, they should check and adjust unsatisfactory designs after all designs are completed, if necessary. In this paper, we analyze how spacing, slew rate, line width, and line length influence the crosstalk, and suggest some solutions for the various factors that nay cause crosstalk problems. we also propose how to optimize the designs by using standardization of noise tables.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.574-579
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• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• Applied Microscopy
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• v.47 no.2
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• pp.77-83
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• 2017

Drastic development of ubiquitous devices requires more advanced batteries with high specific capacitance and high rate capability. Large-area microstructure characterization across the stacks of cathode, electrolyte and anode might reveal the origin of the instability or degradation of batteries upon cycling charge. In this study, sample preparation methods to observe the cross-section view of the electrodes for battery in SEM and several imaging tips are reviewed. For an accurate evaluation of the microstructure, ion milling which flats the surface uniformly is recommended. Pros and cons of cross-section polishing (CP) with Ar ion and focused ion beam (FIB) with Ga ion were compared. Additionally, a modified but new cross-section milling technique utilizing precision ion polishing system (PIPS) which can be an alternative method of CP is developed. This simple approach will make the researchers have more chances to prepare decent large-area cross-section electrode for batteries.