• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.149-150
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• 2006

We describe a novel method of scanning probe nanofabrication using a AFM(atomic force microscopy) tip with assistance of Femtosecond laser pulses to enhance fabrication capability. Illumination of the AFM tip with ultra-short light pulses induces a strong electric field between the tip and the metal surface, which allows removing metal atoms from the surface by means of field evaporation. Quantum simulation reveals that the field evaporation is triggered even en air when the induced electric field reaches the level of a few volts per angstrom, which is low enough to avoid unwanted thermal damages on most metal surfaces. For experimental validation, a Ti: sapphire Femtosecond pulse laser with 10 fs pulse duration at 800 nm center wavelength was used with a tip coated with gold to fabricate nanostructures on a thin film gold surface. Experimental results demonstrate that fine structures with critical dimensions less than ${\sim}10nm$ can be successfully made with precise control of the repetition rate of Femtosecond laser pulses.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.8-14
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• 2011

The optimal geometry of the gate field plate in AlGaN/GaN-on-Si HEMT has been proposed using two-dimensional device simulation to achieve a high breakdown voltage for a given gate-to-drain distance. It was found that the breakdown voltage was drastically enhanced due to the reduced electric field at the gate corner when a gate field plate was employed. The electric field distribution at the gate corner and the field plate edge was investigated as functions of field plate length and insulator thickness. According to the simulation results, the electric field at the gate corner can be successfully reduced even with the field plate length of 1 ${\mu}m$. On the other hand, when the field plate length is too long, the distance between field plate and drain electrode is reduced below a critical level, which eventually lowers the breakdown voltage. The highest breakdown voltage was achieved with the field plate length of 1 ${\mu}m$. According to the simulation results varying the $SiN_x$ film thickness for the fixed field plate length of 1 ${\mu}m$, the optimum thickness range of the $SiN_x$ film was 200 - 300 nm where the electric field strength at the field plate edge counterbalances that of the gate corner.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.66-71
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• 2022

The insulator used for the transmission line is a device that is bonded with a cap, pin, ceramic, and cement to withstand insulation capacity and mechanical load. The insulator design can help to reduce the dispersion of the electric field; thus, the optimization of today's design, especially as demanded power grows, is critical. The designs of four manufacturers were used to perform a comparative analysis. Under dry circumstances of the new product, an electric field distribution study was done with no pollutants attached. Manufacturer D's design has the best voltage uniformity of 24.33% and the arc length of 500 mm or more. Manufacturer C's design has an equalizing voltage of more than 2% higher than that of other manufacturers. The importance of the design of the insulator and the number of connections according to the installation conditions is very efficient for transmission lines that will increase in the future.

• 전기의세계
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• v.31 no.3
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• pp.197-203
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• 1982

The effects on the characteristics of 20-W fluorescent lamp were studied when applying magnetic field to its positive column. First, when the direction of the magnetic field is axial, i.e., along the lamp, if the magnitude of the field is stronger than the critical field, lamp voltage is increased, lamp current decreased, luminous flux increased, starting voltage decreased, as increasing the applied magnetic field. At the magnetic flux density is 130 gauss, luminous flux is increased to about 6 percents and starting voltage is increased to about 45 percents. Second, when the direction of the magnetic field is transverse to the lamp axis, as increasing the applied magnetic field, lamp voltage is increased, lamp current decreased, luminous flux increased and starting voltage is nearly constant, but the rates of increase or decrease of this case is different from those of the first. At the magnetic flux density is 300 gauss, luminous flux is increased about 45 percents. In both cases, electric power dissipated by lamps is the same as that of the lamp which magnetic field is not applied to.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.415-418
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• 2005

To understand effects of carbon nanotubes (CNTs) dispersed in nematic liquid crystal (NLC) on electro-optic characteristic and orientation of the LC, we CNT-doped homogeneously-aligned NLC cells driven by in-plane field have been fabricated. The CNTs were aligned with a LC director from the initial state to below critical ac field, whereas the CNTs disturbed the LC director field above critical ac field. We observed motional textures in the form of vertical stripes in the local area between electrodes, which were associated with a deformation of the LC director orientation. This indicates that CNTs start vibrating three dimensionally with translational motion. Further, the hysterisis studies of voltage-dependent transmittance under dc electric field show that the amount of residual dc, which is related to image sticking problem in liquid crystal displays, is greatly reduced due to ion trapping by CNTS while keeping operating voltage and response time about the same compared to the un-doped LC cell.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.274-277
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• 2003

Critical current(Ic) degradation of HTS tapes after bending is one of the hottest issues in HTS development and application studies. Many people are measuring Ic degradations for effect of bending radius. However even if the bending radius is larger than the breaking radius a HTS tapes can be damaged by repetitive bending, which is unavoidable in the winding processes. Therefore, We studied the Ic degradation after repetitive bending. at 77K with self-field, of Bi-2223 tapes processed by "Powder-in-Tube" technique, which was made by America Superconductor Corporation(AMSC) and superconductiing tapes that strain is imposed measured critical current by temperature difference of L$N_2$ and normal temperature. Like this, critical current could measure that degradation about 1~3％ by temperature difference. These results will amount the most important basis data in power electric machine of superconductivity cable, magnet, etc that winding work is require.

• Journal of Information Display
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• v.6 no.4
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• pp.45-48
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• 2005

By applying a critical field treatment instead of the conventional surface treatments such as soft rubber roller, ion beam irradiation, adhesive taping, and laser irradiation, electron emission properties of screen-printed carbon nanotubes (CNTs) were enhanced and investigated based on the emission current-voltage characteristics through scanning electron microscopy. After nanotube emitters were activated at the applied electric-field of 2.5 V/um, the electron emission current density with good uniform emission sites reached the value of 2.13 mA/$cm^2$ , which is 400 times higher than that of the untreated sample, and the turn-on voltage decreased markedly from 700 to 460 V. In addition, enhancement of the alignment of CNTs to the vertical direction was observed.

• Progress in Superconductivity and Cryogenics
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• v.15 no.2
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• pp.16-19
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• 2013

The magneto-resistivity and electric field-current density (E-J) curves were investigated up to a magnetic field 9 T in the optimally doped $BaFe_{1.8}Co_{0.2}As_2$ single crystal with a superconducting temperature ($T_c$) of 24.6 K. The E-J Scaling behaviors below and above vortex glass transition temperature ($T_g$) were found, confirming the existence of the vortex glass phase transition. The critical exponents for the diverging spatial and time correlations at $T_g$, were obtained as v = $1.1{\pm}0.1$ and z = $4.5{\pm}0.3$, respectively. The obtained critical exponents are in good agreement with the predicted values of v ~ 1 - 2 and z > 4 within the 3D vortex glass theory.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.4
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• pp.222-228
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• 2015

Power MOSFETs (metal oxide semiconductor field effect transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device, it is essential to increase its conductance. However, a trade-off relationship between the breakdown voltage and conductance of the device have been the critical difficulty to improve. In this paper, theoretical analysis of electrical benefits on single floating island power MOSFET is proposed. By the method, the optimization point has set defining the doping limit under single floating island structure. The numerical multiple 2.22 was obtained which indicates the doping limit of the original device, improving its ON state voltage drop by 45%.

• Progress in Superconductivity and Cryogenics
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• v.9 no.1
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• pp.57-60
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• 2007

Superconducting electric power devices need to stack HTS wires to increase the current carrying capacity. Uniform multi-stacked wires(UMS) which were made of the same HTS wires have been used. This paper shows the magnetization loss of hybrid multi-stacked(HMS) wire made of BSCCO wires and YBCO wires. Five HMS wires, YB(YBCO-BSCCO), YYBB. YBYB, YBBY and BYYB, were made and tested. Magnetization losses of each UMS wire were compared with corresponding HMS wire. Test results show that magnetization losses per unit length of HMS wire are between the corresponding UMS BSCCO wire and HMS YBCO wire below critical magnetic field. Above the critical magnetic field, magnetization losses of HMS wires are larger than that of corresponding both VMS wires.