• 대한금속재료학회지
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• 제49권4호
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• pp.334-341
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• 2011

The mechanism behind super-filling of high-aspect-ratio features with Cu by catalyst-enhanced chemical vapor deposition (CECVD) coupled with plasma treatment is described and the metrology required to predict the filling feasibility is identified and quantified. The reaction probability of a Cu precursor was determined as a function of substrate temperature. Iodine adatoms are deactivated by the bombardment of energetic particles and also by the overdeposition of sputtered Cu atoms during the plasma treatment. The degree of deactivation of adsorbed iodine was experimentally quantified. The quantified factors, reaction probability and degree of deactivation of iodine were introduced to the simulation for the prediction of the trench filling aspect by CECVD coupled with plasma treatment. Simulated results show excellent agreement with the experimental filling aspects.

• 한국응용과학기술학회지
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• 제22권1호
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• pp.77-83
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• 2005

The influence of fluorescence, scattering, and absorbance in turbid material by light scattering was interpreted by the scattered fluorescence intensity and wavelength. The effect of optical property in scattering media was investigated. It is very important to study the charge coupled device(CCD) in spectrometry because we can use the molecular energy level, molecular structure, absorption or emission, intermolecular reaction, weakly bound molecular energy, photochemistry, fluorescence and photodynamic therapy. CCD is very essential to study the molecular structure and medical engineering combined laser spectroscopy in the modem physical and chemistry. Accordingly, this study has designed and manufactured the electromagnetic spectrometry with CCD, and has analyzed the hematoporphyrin derivative.

• Journal of the Korean Physical Society
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• 제73권10호
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• pp.1519-1528
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• 2018

The objective of the present study is the development of a comprehensive air chemical kinetic model that includes 11 species and 54 chemical reactions for the numerical investigation of air nonequilibrium inductively coupled plasmas. The two-dimensional, compressible Navier-Stokes equations coupled with the electromagnetic-field equations were employed to describe the fundamental characteristics of an inductive plasma. Dunn-Kangs 32 chemical-reaction model of air was reconstructed and used as a comparative model. The effects of the different chemical kinetic models on the flow field were analyzed and discussed at identical/different working pressures. The results theoretically indicate that no matter the working pressure is low or high, the use of the 54 chemical kinetic model presented in this study is a better choice for the numerical simulation of a nonequilibrium air ICP.

• 한국자동차공학회논문집
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• 제12권2호
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• pp.54-61
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• 2004

The engine-out flow is highly transient and hot, and may place tremendous thermal and inertial loads on a closed-coupled catalyst. Therefore, time-dependent and detailed flow and thermal field simulation may be crucial. The aim of this study is to develop combined chemical reaction and multi-dimensional fluid dynamic mathematical model and to study the effect of unsteady pulsating thermal and flow characteristics on thermal reliability of closed-coupled catalyst. The effect of cell density on the conversion performance under real running condition is also investigated. Unlike previous studies, the present study focuses on coupling between the problems of pulsating flow pattern and catalyst thermal response and conversion efficiency. The results are expressed in terms of temporal evolution of flow, pollutant and temperature distribution as well as transient characteristics of conversion efficiency. Fundamental understanding of the flow and thermal phenomena of closed-coupled catalyst under real running condition is presented. It is shown that instants of significantly low values of flow uniformity and conversion efficiency exist during exhaust blowdown and the temporal varaition of flow uniformity is very similar in pattern to one of conversion efficiency. It is also found that the location of hot spot in monolith is directly affected by transient flow pattern in closed-coupled catalyst.

• Mycobiology
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• 제40권4호
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• pp.258-262
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• 2012

cDNA of the glx1 gene encoding glyoxal oxidase (GLX) from Phanerochaete chrysosporium was isolated and expressed in Pichia pastoris. The recombinant GLX (rGLX) produces $H_2O_2$ over 7.0 nmol/min/mL using methyl glyoxal as a substrate. Use of rGLX as a generator of $H_2O_2$ improved the coupled reaction with recombinant manganese peroxidase resulting in decolorization of malachite green up to $150{\mu}M$ within 90 min.

• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1011-1015
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• 2002

In this study, Au thin films were etched with a Cl$_2$/Ar gas combination in an inductively coupled plasma. The highest etch rate of the Au thin film was 3500 A/min at a Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in Cl$_2$/Ar plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions[l].

• 반도체디스플레이기술학회지
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• 제6권2호
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• pp.35-40
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• 2007

An integrated material removal model considering thermal, chemical and contact mechanical effects in CMP process is proposed. These effects are highly coupled together in the current modeling effort. The contact mechanics is employed in the model incorporated with the heat transfer and chemical reaction mechanisms. The mechanical abrasion actions happening due to the mechanical contacts between the wafer and abrasive particles in the slurry and between the wafer and pad asperities cause friction and consequently generate heats, which mainly acts as the heat source accelerating chemical reaction(s) between the wafer and slurry chemical(s). The proposed model may be a help in understanding multi-physical interactions in CMP process occurring among the wafer, pad and various consumables such as slurry.

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.286-291
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• 2003

(Pb,Sr)TiO$_3$(PST) thin films have attracted great interest as new dielectric materials of capacitors for Gbit dynamic random access memories. In this study, inductively coupled CF$_4$/Ar plasma was used to etch PST thin films. The maximum etch rate of PST thin films was 740 $\AA$/min at a CF$_4$(20 %)/Ar(80 %) 9as mixing ratio, an RF power of 800 W, a DC bias voltage of -200 V, a total gas flow of 20 sccm, and a chamber pressure of 15 mTorr. To clarify the etching mechanism, the residue on the surface of the etched PST thin films was investigated by X-ray photoelectron spectroscopy. It was found that Pb was mainly removed by physically assisted chemical etching. Sputter etching was effective in the etching of Sr than the chemical reaction of F with Sr, while Ti can almost removed by chemical reaction.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회B
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• pp.2977-2983
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• 2008

The combustion characteristics of a partially premixed flame in a dump combustor were studied to determine the effects of hydrogen enrichment in propane. Bluff-body was used for flame stabilization. Fuel mixtures containing a hydrogen mole fraction ranging from 0.1 to 0.5 were burnt at ambient pressure within a quartz chamber. Tests were carried out keeping the total reactant flow rate by adjusting the fuel and air flow rates. The fluctuations of pressure were measured by piezoelectric pressure sensor. The instantaneous flame structure and OH chemiluminescence images were described by High-speed Intensified Charged Coupled Device (HICCD) camera and Intensified Charged Coupled Device (ICCD) camera. The present results show that hydrogen enrichment in fuel changed the location of primary reaction zone from inner recirculation zone to turbulent shear layer and pressure signal. The reason is that chemical aspects take precedence over flow aspects in the hydrogen-enriched flame.

• Transactions on Electrical and Electronic Materials
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• 제13권1호
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• pp.6-9
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• 2012

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$) of ZnO thin films in $N_2/Cl_2$/Ar inductivity coupled plasma. A maximum etch rate and selectivity of 108.8 nm/min and, 3.21, respectively, was obtained for ZnO thin film at a $N_2/Cl_2$/Ar gas mixing ratio of 15:16:4 sccm. The plasmas were characterized by optical emission spectroscopy. The x-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment. An accumulation of low volatile reaction products on the etched surface was also shown. Based on this data, an ion-assisted chemical reaction is proposed as the main etch mechanism for plasmas containing $Cl_2$.