• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.42-47
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• 2017

This paper proposes a new series-coupled voltage-controlled oscillator (VCO). The proposed VCO consists of four current-reuse Armstrong VCOs (CRA-VCOs) coupled by four transformers. The series-coupling, current-reuse, and Armstrong topologies improve the phase noise performance by increasing the negative-Gm of the VCO core with half the current consumption of a conventional differential VCO. The proposed VCO consumes 6.54 mW at 9.78 GHz from a 1-V supply voltage. The measured phase noise is -115.1 dBc/Hz at an offset frequency of 1 MHz, and the FoM is -186.5 dBc/Hz. The frequency tuning range is from 9.38-10.52 GHz. The core area is $0.49mm^2$ in a $0.13-{\mu}m$ CMOS process.

• 한국ITS학회:학술대회논문집
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• v.2006 no.10
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• pp.316-320
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• 2006

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.591-600
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• 2010

In this paper, three kinds of 24 GHz low-power CMOS cross-coupled voltage controlled oscillators are designed and fabricated for a short-range radar applications using TSMC 0.13 ${\mu}m$ CMOS process. The basic CMOS crosscoupled voltage controlled oscillator is designed for oscillating around a center frequency of 24.1 GHz and subthreshold oscillators are developed for low power operation from it. A double resonant circuit is newly applied to the subthreshold oscillator to improve the problem that parasitic capacitance of large transistors in a subthreshold oscillator can push the oscillation frequency toward lower frequencies. The fabricated chips show the phase noise of -101~-103.5 dBc/Hz at 1 MHz offset, the output power of -11.85~-15.33 dBm and the frequency tuning range of 475~852 MHz. In terms of power consumption, the basic oscillator consumes 5.6 mW, while the subthreshold oscillator does 3.3 mW. The subthreshold oscillator with the double resonant circuit shows relatively lower power consumption and improved phase noise performance while maintaining a comparable frequency tuning range. The subthreshold oscillator with double resonances has FOM of -185.2 dBc based on 1 mW DC power reference, which is an about 3 dB improved result compared with the basic oscillator.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.8
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• pp.783-789
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• 2002

In this paper, V-band MMIC coupled oscillator arrays are presented. In the proposed array, two push-pull patch antennas are synchronized by using strong electromagnetic coupling between two antennas. As a result, total size of the array is reduced and the array can be integrated in a single chip. To verify proposed array concept, two 1$\times$2 arrays are designed and fabricated using standard 0.15 um gate length pHEMT MMIC process. The circuits are mounted in an oversized waveguide and measured. The first array shows 0.5 dBm at 56.372 GHz and the second one has an output of 5.85 dBm at 60.147 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.11 s.114
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• pp.1112-1119
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• 2006

In this paper, mutually coupled oscillator is employed to improve phase noise. Mutually coupled structure oscillator couples two oscillator's phase shifted output signals, that is fabricated using teflon board which has dielectric constant of 2.5 and Surface Mount Gallium Arsenide FET devices. And this paper proposed the structure to bias adjustment for the phase condition of mutually couples. When one oscillator has bias point of 4.4 V and 37 mA, it's output signal has phase noise characteristic of -96.37 dBc(@9305 MHz, offset frequency 100 KHz), -73.46 dBc(10 kHz). and After it's output signal mutually coupled the other's output signal that has bias point of 8.1 V and 69 mA, it has superior phase noise characteristic of -106.7 dBc(@9305 MHz, offset frequency 100 kHz), -81 dBc(10 kHz).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.1
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• pp.83-89
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• 2010

In this paper, we propose a new varactor coupled line structure and design the VCO using the proposed structure. The proposed coupled line structure removes the reflected signals from the varactor diode using an added $\lambda$/4 transmission line. The frequency synthesizers are designed using the PLL technique at Ku-band. The synthesizer using the proposed coupled structure has 38 MHz frequency tuning range and -97 dBc/Hz phase noise characteristic at 100 KHz offset frequency. The measured results show improved tuning range as well as the improved phase noise characteristics compared to the conventional designs.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.3
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• pp.763-770
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• 1996

In this paper, the Single-stage Transmission type Injectiong-Locked Oscillator(STILO) was designed and fabicated for the Active Integrated Phased Array Antenna(AIPAA) system. The STILO, which was designed and fabricated by injection-locked technique and hair-pin resonator, has the same 210MHz frequency tuning range of the Voltage Controlled Oscillator(VCO) used by varactor. The locking bandwidth of STILO with 11.5MHz bandwidth, is much better than that of the Injection-Locked Dielectric Resonator Oscillator(ILDRO), And the STILO has the improved noise characteristics in AM, FM, and PM. This STILO is useful for the AIPAA, the coupled VCO array, an the MMIC structure.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.4
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• pp.506-510
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• 2016

A triple-band (TB) oscillator was implemented in the TSMC $0.18{\mu}m$ 1P6M CMOS process, and it uses a cross-coupled nMOS pair and two shunt $4^{th}$ order LC resonators to form a $6^{th}$ order resonator with three resonant frequencies. The oscillator uses the varactors for band switching and frequency tuning. The core current and power consumption of the high (middle, low)- band core oscillator are 3.59(3.42, 3.4) mA and 2.4(2.29, 2.28) mW, respectively at the dc drain-source bias of 0.67V. The oscillator can generate differential signals in the frequency range of 8.04-8.68 GHz, 5.82-6.15 GHz, and 3.68-4.08 GHz. The die area of the triple-band oscillator is $0.835{\times}1.103mm^2$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.5A
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• pp.513-518
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• 2010

Improvement of phase noise characteristics in a different approach of HEMT VCO (Voltage Controlled Oscillator) with coupled microstrip lines to tune the oscillating frequency is investigated. Two HEMT VCOs of 9.8GHz are manufactured in the same configuration except for the frequency tuning circuit in order to empirically demonstrate the phase noise reduction. Experimental result shows that phase noise reduction can be enhanced 8dBc/Hz at 100KHz offset frequency from carrier by frequency tuning circuit with coupled microstrip lines over the conventional VCO.

• International Journal of Internet, Broadcasting and Communication
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• v.15 no.3
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• pp.122-128
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• 2023

This paper proposes two kinds of single-balanced direct conversion quadrature receivers using selfoscillating LMVs in which the voltage-controlled oscillator (VCO) itself operates as a mixer while generating an oscillation. The two LMVs are complementary coupled and series coupled to generate the quadrature oscillating signals, respectively. Using a 65 nm CMOS technology, the proposed quadrature receivers are designed and simulated. Oscillating at around 2.4 GHz frequency, the complementary coupled quadrature receiver achieves the phase noise of -28 dBc/Hz at 1KHz offset and -109 dBc/Hz at 1 MHz offset frequency. The other series coupled receiver achieves the phase noise of -31 dBc/Hz at 1KHz offset and -109 dBc/Hz at 1 MHz offset frequency. The simulated voltage conversion gain of the two single-balanced receivers is 37 dB and 45 dB, respectively. The double-sideband noise figure of the two receivers is 5.3 dB at 1 MHz offset. The quadrature receivers consume about 440 μW dc power from a 1.0-V supply.