• Restorative Dentistry and Endodontics
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• 제16권2호
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• pp.1-17
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• 1991

The purpose of this study was to analyze the in vivo amalgam corrosion products qualitatively. 30 molars with large, intact amalgam restorations were selected. All the restorations were more than 5 years old. Twenty of the removed amalgams were embedded in acrylic resin block. The exposed surfaces of fifteen embedded amalgams were polished by amalgam polishing kit, and the rest were observed without polishing. The remaining 10 amalgams were fractured centrally and perpendiculary to the occlusal surface with a wire-cutter. After all specimens were cleaned ultrasonically in distilled water, each surface was examined under S.E.M. and E.D.A.X. (Energy Dispersive Micro X-ray Analyzer) to determine the morphology and chemical nature of the corrosion products. The following results were obtained: 1. The surfaces of the unpolished amalgam restorations were covered with thin amorphous layer of Sn-Ca-P-S complex with numerous cracks. 2. In the conventional amalgams, the major corrosion products were Sn-Cl phases however, tin oxide phases were also observed. 3. Only tin oxide phase was identified in the high copper amalgam, but it was less frequently observed than in the conventional amalgam. 4. It was easier to observe the corrosion product morphology in the fractured surfaces than in the polished ones. The morphologies of the corrosion product crystals looked like a stack of slightly bended plates in the Sn-Cl phases and polyhedra or polygonal prisms in the tin oxide phases.

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.213-217
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• 2007

Copper has been used as an interconnect material in the fabrication of semiconductor devices, because of its higher electrical conductivity and superior electro-migration resistance. Chemical mechanical polishing(CMP) technique is required to planarize the overburden Cu film in an interconnect process. Various problems such as dishing, erosion, and delamination are caused by the high pressure and chemical effects in the Cu CMP process. But these problems have to be solved for the fabrication of the next generation semiconductor devices. Therefore, new process which is electro-chemical mechanical polishing(ECMP) or electro-chemical mechanical planarization was introduced to solve the technical difficulties and problems in CMP process. In the ECMP process, Cu ions are dissolved electrochemically by the applying an anodic potential energy on the Cu surface in an electrolyte. And then, Cu complex layer are mechanically removed by the mechanical effects between pad and abrasive. This paper focuses on the manufacturing of ECMP system and its process. ECMP equipment which has better performance and stability was manufactured for the planarization process.

• 한국정밀공학회지
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• 제34권2호
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• pp.101-106
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• 2017

The chemical mechanical planarization (CMP) process combines the chemical effect of slurry with the mechanical effect of abrasive (slurry)-wafer-pads The slurry delivery system has a notable effect on polishing results, because the slurry distribution is changed by the supply method. Thus, the investigation of slurry pumps and nozzles with regard to the slurry delivery system becomes important. This paper investigated the effect of a centrifugal slurry pump on a spray nozzle system in terms of uniform slurry supply under a rotating copper (Cu) wafer, based on experimental results and computational fluid dynamics (CFD). In conventional tools, the slurry is unevenly and discontinuously supplied to the pad, due to a pulsed flow caused by the peristaltic pump and distributed in a narrow area by the tube nozzle. Adopting the proposed slurry delivery system provides a higher uniformity and lowered shear stress than usual methods. Therefore, the newly developed slurry delivery system can improve the CMP performance.

• 한국표면공학회지
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• 제53권1호
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• pp.29-35
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• 2020

In this study, five different specimen preparation methods were introduced and their advantages and disadvantages were presented. One of them, an epoxy mounting method has advantages of constant exposure area, ease of surface preparation without touching the specimen surface during polishing or cleaning, use of small amount of material and ease of specimen reuse by polishing or etching. However, in order to eliminate unexpected errors resulting from preferable reaction at the specimen/epoxy interface and contact resistance between the specimen and copper conducting line for electrical connection, it is recommended to cover the wall side of the specimen with porous anodic oxide films and to remain the contact resistance lower than 1 ohm. The increased contact resistance between the specimen and Cu conducting line appeared to result in increases of anodizing voltage and solution temperature during anodizing by which thickness and hardness of anodizing film on Al2024 alloy were drastically decreased and color of the films became more brightened.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.653-654
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• 2005

Stick-slip friction is one of the material removal mechanisms in tribology. This stick-slip friction occurs when the static friction force is larger than the dynamic friction force, and make the friction curve fluctuated. In the friction force monitoring system for chemical mechanical polishing(CMP), the friction force also vibrates just as stick-slip friction. It seems that the stick-slip friction causes scratches on the surface of moving parts. In this paper, A study on the scratches which occur during copper CMP was conducted in a view of stick-slip friction.

• Restorative Dentistry and Endodontics
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• 제9권1호
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• pp.101-106
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• 1983

It was the purpose of this study to investigate the fracture mode of dental amalgam by observing the crack propagation, and to relate this to the microstructure of the amalgam. Caulk 20th Century Regular, Caulk Spherical, Dispersalloy, and Tytin amalgam alloys were used for this study. After each amalgam alloy and Hg measured exactly by the balance was triturated by the mechanical amalgamator (Capmaster, S.S. White), the triturated mass was inserted into the cylindrical metal mold which was 4 mm in diameter and 12 mm in height and was pressed by the Instron Universal Testing Machine at the speed of 1mm/min with 120Kg. The specimen removed from the mold was stored in the room temperature for a week. This specimen was polished with the emery papers from #100 to #200 and finally on the polishing cloth with 0.06${\mu}Al_2O_3$ powder suspended in water. The specimen was placed on the Instron testing machine in the method similar to the diametral tensile test and loaded at the crosshead speed of 0.05mm/min. The load was stopped short of fracture. The cracks on the polished surface of specimen was examined with scanning electron microscope (JSM-35) and analyzed by EPMA (Electron probe microanalyzer). The following results were obtained. 1. In low copper lathe-cut amalgam, the crack went through the voids and ${\gamma}_2$ phase, through the ${\gamma}_1$ phase around the ${\gamma}$ particles. 2. In low copper spherical amalgam, it was observed that the crack passed through the ${\gamma}_2$ and ${\gamma}_1$ phase, and through the boundary between the ${\gamma}_1$ and ${\gamma}$ phase. 3. In high copper dispersant (Dispersalloy) amalgam, the crack was found to propagate at the interface between the ${\gamma}_1$ matrix and reaction ring around the dispersant (Ag-Cu) particles, and to pass through the Ag-Sn particles. 4. In high copper single composition (Tytin) amalgam, the crack went through the ${\gamma}_1$ matrix between ${\eta}$ crystals, and through the unreacted alloy particle (core).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.382-385
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• 2003

Chemical mechanical polishing(CMP) is an essential process in the production of copper-based chips. On this work, the stability of Hydrogen Peroxide($H_2O_2$) as oxidizer of Cu CMP slurry has been investigated. $H_2O_2$ is known as the most common oxidizer in Cu CMP slurry. Copper slowly dissolves in $H_2O_2$ solutions and the interaction of $H_2O_2$ with copper surface had been studied in the literature. Because hydrogen peroxide is a weak acid in aqueous solutions, a passivation-type slurry chemistry could be achieved only with pH buffered solution.[1] Moreover, $H_2O_2$ is so unstable that its stabilization is needed using as oxidizer. As adding KOH as pH buffering agent, stability of $H_2O_2$ decreased. However, stability went up with putting in small amount of BTA as film forming agent. There was no difference of $H_2O_2$ stability between KOH and TMAH at same pH. On the other hand, $H_2O_2$ dispersion of TMAH is lower than that of KOH. Furthermore, adding $H_2O_2$ in slurry in advance of bead milling lead to better stability than adding after bead milling. Generally, various solutions of phosphoric acids result in a higher stability. Using Alumina C as abrasive was good at stabilizing for $H_2O_2$; moreover, better stability was gotten by adding $H_3PO_4$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.538-538
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• 2008

금속계열의 박막을 평탄화하기위해서는 슬러리에 함유된 산화제에 의해 부동태층의 형성이 선행되어야 한다. 따라서 본 논문에서는 Copper 박막의 표면을 부동태층으로 형성시키고 CMP공정을 하기위해 산화제에 dipping을 시켰으며 삼화제의 종류는 $H_2O_2$, MSW2000B, $KIO_3$로 하고 dipping 시간은 30초, 60초, 90초, 3분, 10분으로 하여 시간과 산화제 종류에 따른 부동태층의 변화를 연구하였다. 부동태층의 관찰은 FESEM을 이용하여 표면과 단면을 관찰하였고 부동태층의 조성비율은 EDX를 이용하여 조사하였다. MSW 2000B의 경우는 부동태층이 덩어리 모양으로 형성되었으며 포화현상은 3분에 일어났다. 반면에 $H_2O_2$의 경우는 부동태층이 침상 모양으로 형성되었으며 포화현상은 90초에 일어났다. 산화제에 의해 부동태층을 형성시킨 후 POLI-450을 이용하여 평탄화공정을 진행하였으며 CMP공정조건은 부동태층의 연질상태임을 감안하여 헤드 스피드 20rpm, 플레이튼 스피드 10rpm, 슬러리 주입속도 90ml/min, 공정온도는 상온으로 하여 진행하였다. $H_2O_2$를 산화제로 사용하여 dipping을 하고 CMP를 하였을 경우에 균일한 박막을 확보 할 수 있었으며 CMP 공정 후 copper 박막의 균일성은 FESEM을 이용하여 관찰 하였다.

• Restorative Dentistry and Endodontics
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• 제8권1호
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• pp.89-96
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• 1982

The purpose of this study is to identify the phases of four different types, low-copper lathe cut (Type II, class 1) and spherical (Type II, class 2) amalgam alloys which are made by Caulk company and high copper Dispersalloy (Type II, class 3) made by Johnson & Johnson and Tytin (Type I, class 2) made by S.S. White and to determine the Vickers hardness number on the individual phase and four different types of dental amalgam. After each amalgam alloy and Hg measured exactly by the balance was triturated by the mechanical amalgamator (De Trey), the triturated mass was inserted into the cylindrical metal mold which was 4 mm in diameter and 12mm in height and was pressed by the Instron Universal Testing machine (Model 1125) at the speed of 1mm/minute with 143$kg/cm^2$ according to the A.D.A. Specification No. 1. The Specimen removed from the mold, mounted and stored in the room temperature for 7 days. The speciman was polished with the emery paper from #220 to #1200 and finally on the polishing cloth with 0.3 and 0.05 um $Al_2O_3$ powder suspended in water. And then each specimen was etched by Allan's method and washed with Sodium Bisulfinite for 30 seconds. Finally differentiation and metallography on each phase were obtained by using metallographical microscope (Versamet, Union) and microhardness was obtained by using microhardness tester (MVH-2, Torsee). The results were as follows: 1. In the low-copper amalgam, the ${\gamma}$, ${\gamma}_1$ and ${\gamma}_2$ phase were observed and in the high-copper amalgam, the ${\gamma}$, ${\gamma}_1$. ${\epsilon}$ and ${\eta}$ phases were observed but ${\gamma}_2$ phase was not observed. 2. Among the microhardness of each amalgam phase measured under pressing a vickers diamond indenter with 2.0gm load for 30 seconds, e phase has the highest V.H.N (314 ${\pm}$ 20), and in low-copper amalgam 12 phase has the lowest V.H.N. (29${\pm}$1) and ${\eta}$ phase which was observed in high-copper amalgam has 230${\pm}$13 V.H.N and this phase is considerd to contribute to strengthen the handness in amalgam. 3. The V.H.N. measured under pressing a Vickers diamond indenter with 300.0gm load for 30 seconds in low-copper amalgam was lower than that of high-copper amalgam.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.162-165
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• 2003

The corrosion characteristics of diffusion barrier in Copper CMP has been investigated. Key experimental variables that has been investigated are the corrosion rate by different agents containing slurry of Cu CMP. Whenever Cu and Ta films were corroded adding each oxidizer, the corrosion rate of Ta was much lower than that of Cu. That is, the difference in the corrosion rates of Ta by oxidizer was not larger as compared with Cu. As corroded by complexing agents, the corrosion rate of Ta was close to O. The corrosion rate of Ta increased as added $HNO_3$ and $CH_3COOH$ compared with the reference slurry; on the other hand, it decreased with addition of HF. In addition, resulting corrosion rate went up with lower pH of agent. The corrosion rates by agents were however significant small; hence, it doesn't affect on the removal rate of Cu CMP practically. Consequently, this can be explained by assuming that the mechanical effect dominates than the chemical effect on the polishing rate of Ta(TaN).